SOT-23 MARK 3B TRANSISTOR Search Results

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

PN918

Abstract: MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor
Contextual Info: MMBT918 PN918 C E C B TO-92 SOT-23 E B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol

y 331 Transistor

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C C B E TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

CBVK741B019

Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

mmbt918

Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

Contextual Info: Discrete POWER & Signal Technologies S iM IC D N P U C T O B MMBT918 PN918 C < \' TO-92 SOT-23 BE B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.

MMBT918

Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PN918 MMBT918 TO-92 SOT-23 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.

AC 187 npn transistor TO 1

Abstract: MMBT918 PN918
Contextual Info: u c t o r " PN918 C MMBT918 TO-92 SOT-23 B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R

BC557

Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V VEBO –5.0

BC557

Abstract: BC557 bc556 transistor BC559 BC856 on semiconductor
Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage

BC857A BC857b difference

Abstract: BC856 BC856ALT1 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1
Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage

BC856

Abstract: BC856ALT1 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1 BC859
Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856ALT1 Series MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V VEBO –5.0 V

MAX4105

Abstract: MAX4304 MAX4104 MAX4304/MAX4305
Contextual Info: 19-4757; Rev 3; 10/98 L MANUA ION KIT HEET T A U L EVA TA S WS DA FOLLO 740MHz, Low-Noise, Low-Distortion Op Amps in SOT23-5 The MAX4104/MAX4105/MAX4304/MAX4305 op amps feature ultra-high speed, low noise, and low distortion in a SOT23 package. The unity-gain-stable MAX4104

MARK aabs SOT23-6

Abstract: MAX1719 aabt 1n4148 sot23 MAX1720 MAX868
Contextual Info: 19-1439; Rev 1; 5/99 SOT23, Switched-Capacitor Voltage Inverters with Shutdown The ultra-small MAX1719/MAX1720/MAX1721 monolithic, CMOS charge-pump inverters accept input voltages ranging from +1.5V to +5.5V. The MAX1720 operates at 12kHz, and the MAX1719/MAX1721 operate at 125kHz.

MAX1719

Abstract: 1n4148 sot23 MAX868 MAX1719EUT MAX1720 power MOSFET sot23-6 C2S SOT23 6pin lcd inverter
Contextual Info: 19-1439; Rev 2; 4/04 SOT23, Switched-Capacitor Voltage Inverters with Shutdown The ultra-small MAX1719/MAX1720/MAX1721 monolithic, CMOS charge-pump inverters accept input voltages ranging from +1.5V to +5.5V. The MAX1720 operates at 12kHz, and the MAX1719/MAX1721 operate at 125kHz.

MAX1719

Contextual Info: 19-1439; Rev 2; 4/04 SOT23, Switched-Capacitor Voltage Inverters with Shutdown The ultra-small MAX1719/MAX1720/MAX1721 monolithic, CMOS charge-pump inverters accept input voltages ranging from +1.5V to +5.5V. The MAX1720 operates at 12kHz, and the MAX1719/MAX1721 operate at 125kHz.

voltage inverters

Abstract: MAX1719 power MOSFET sot23-6 MAX1720 MAX868
Contextual Info: 19-1439; Rev 1; 5/99 SOT23, Switched-Capacitor Voltage Inverters with Shutdown The ultra-small MAX1719/MAX1720/MAX1721 monolithic, CMOS charge-pump inverters accept input voltages ranging from +1.5V to +5.5V. The MAX1720 operates at 12kHz, and the MAX1719/MAX1721 operate at 125kHz.

MAX4105

Contextual Info: 19-4757; Rev 3; 10/98 L MANUA ION KIT HEET T A U L EVA TA S WS DA FOLLO 740MHz, Low -Noise, Low -Distortion Op Amps in SOT23-5 The MAX4104/MAX4105/MAX4304/MAX4305 op amps feature ultra-high speed, low noise, and low distortion in a SOT23 package. The unity-gain-stable MAX4104

CMR SOT23-5

Abstract: MAX4104EUK-T MAX4105 MAX4304 MAX4104 SR285 PAY SOT23-5 MAX4104EUK
Contextual Info: MAX4104 DS 8/26/98 4:44 PM Page 1 19-4757; Rev 2; 6/98 KIT ATION EVALU LE B A IL A AV 740MHz, Low-Noise, Low-Distortion Op Amps in SOT23-5 General Description The MAX4104/MAX4105/MAX4304/MAX4305 op amps feature ultra-high speed, low noise, and low distortion in

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further