SOT-23 2A TRANSISTOR Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER

Marking 2A

Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
Contextual Info: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — As complementary type, the NPN transistor MMBT3904 is Recommended — Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: ; S v m Se m i ; SOT-23 5YM5EMI SEMICONDUCTOR MMBT2907LT1 Plastic Encapsulate Transistors transistor SOT — 23 c pnp 1. BASE 2. EM IH E R 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W Tamb=25 °C) 2A Collector current Icm : -0.6 1.3 A Collector base voltage

Contextual Info: : S v m Se m i : 5YM5EMI 5EMIC0 MDUCT0 R SOT -23 Plastic Encapsulate Transistors SOT — 23 BCW61 C TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.25 W Collector current Icm : -0.1 A 2A (Tamb=25 *C) 1.3 4H Collector base voltage

MMBT3904 jiangsu

Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER

RF transistor marking IN SOT-89

Abstract: RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89
Contextual Info: TSB1424 Low Vcesat PNP Transistor SOT-89 SOT-23 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150

Contextual Info: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

MARKING 2A

Abstract: MMBT3906 MMBT3904
Contextual Info: MMBT3906 Pb RoHS 0.3 Watts PNP Plastic-Encapsulate Transistors COMPLIANCE SOT-23 Features — As complementary type, the NPN transistor MMBT3904 is recommended — Epitaxial planar die construction — Marking: 2A Dimensions in inches and millimeters Maximum Ratings

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted

SMD TRANSISTOR MARKING 2A pnp

Abstract: MARKING SMD TRANSISTOR P CMBT3906 MARKING SMD PNP TRANSISTOR 2a
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE

JESD97

Abstract: STT2PF60L drive motor 60v with transistor P channel MOSFET marking code 10 sot23 o811 stp6
Contextual Info: STT2PF60L P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L STripFET II Power MOSFET General features Type VDSS RDS on ID STT2PF60L 60V < 0.25Ω 2A • Standard outline for easy automated surface mount assembly ■ Low threshlod drive SOT23-6L Description This Power MOSFET is the latest development of

STP6

Abstract: STT2PF60L JESD97 MAX4434
Contextual Info: STT2PF60L P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L STripFET II Power MOSFET General features Type VDSS RDS on ID STT2PF60L 60V < 0.25Ω 2A • Standard outline for easy automated surface mount assembly ■ Low threshlod drive SOT23-6L Description This Power MOSFET is the latest development of

SMD TRANSISTOR MARKING 2A pnp

Abstract: CMBT3906
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

model of 2n3906

Contextual Info: MMBT3906 PZT3906 C C C B E TO-92 E B SOT-23 B SOT-223 E C Mark: 2A 2N3906 / MMBT3906 / PZT3906 2N3906 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. Sourced

FSB560

Abstract: FSB560A
Contextual Info: FSB560/FSB560A July 1998 FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol

Contextual Info: FSB660/FSB660A July 1998 FSB660 / FSB660A C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A

MMBT8050

Abstract: MMBT8050 BR mmbt8050 sot-23
Contextual Info: MMBT8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package

MMBT8550

Contextual Info: MMBT8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package

KST3906

Abstract: WH*s
Contextual Info: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage

Contextual Info: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage

TRANSISTOR W25

Abstract: FMMT549
Contextual Info: FMMT549 FMMT549 C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted

MMBT3906 UTC

Contextual Info: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )