SOT-23 2A Search Results

SOT-23 2A Result Highlights (5)

Part	Manufacturer	Description
MKZ6V2	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.2 V, SOT-23
MSZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, SOT-346
MUZ20V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 20 V, SOT-323
MKZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, SOT-23
MSZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, SOT-346

SOT-23 2A Price and Stock

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MACOM SMV2302A-SOT23-R PIN Diodes Diode,SMV2302A-SOT23-R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SMV2302A-SOT23-R					1 - 10 - 100 - 1000 - 10000 $21.57	Get Quote

SOT-23 2A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER	Original	OT-23 MMBT3906 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA	PDF
Marking 2A Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23 Text: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	MMBT3906 OT-23 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA, 100MHz Marking 2A 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23	PDF
Untitled Abstract: No abstract text available Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2A B E SOT-23	Original	MMBT3906 OT-23 350mWatts OT-23 30Vdc, IC/10	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT589 TRANSISTOR PNP FEATURES z High current surface mount PNP silicon switching transistor for Load management in portable applications 1. BASE 2. EMITTER	Original	OT-23 MMBT589 -500mA -500mA, -50mA -100mA -200mA	PDF
TRANSISTOR SMD MARKING CODE 2A Abstract: TRANSISTOR SMD MARKING CODE 1K MARKING SMD PNP TRANSISTOR 2a smd transistor MARKING 2A TRANSISTOR SMD MARKING CODE 04 TRANSISTOR SMD MARKING CODE smd transistor MARKING 2A sot23 smd code marking 2A sot23 SMD MARKING CODE transistor 2A TRANSISTOR SMD MARKING CODE .2A Text: SMD General Purpose Transistor PNP MMBT3906 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:	Original	MMBT3906 OT-23 OT-23, MIL-STD-202G, TRANSISTOR SMD MARKING CODE 2A TRANSISTOR SMD MARKING CODE 1K MARKING SMD PNP TRANSISTOR 2a smd transistor MARKING 2A TRANSISTOR SMD MARKING CODE 04 TRANSISTOR SMD MARKING CODE smd transistor MARKING 2A sot23 smd code marking 2A sot23 SMD MARKING CODE transistor 2A TRANSISTOR SMD MARKING CODE .2A	PDF
MMBD501 Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70 Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2	OCR Scan	OT-23 OT-23 MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD501 MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MBAS16	PDF
PNP transistor 1a 30v Abstract: MMBT589 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT589 TRANSISTOR PNP FEATURES z High current surface mount PNP silicon switching transistor for Load management in portable applications 1. BASE 2. EMITTER	Original	OT-23 MMBT589 -500mA -500mA, -50mA -100mA -200mA PNP transistor 1a 30v MMBT589	PDF
MARKING SMD PNP TRANSISTOR 2a Abstract: smd transistor NF TRANSISTOR SMD fr MARKING SMD PNP TRANSISTOR FR MARKING 25 SMD PNP TRANSISTOR smd transistor 2a smd 2a transistor transistor SMD 24 transistor SMD 104 NF marking TRANSISTOR SMD Text: SMD General Purpose Transistor PNP MMBT3906 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:	Original	MMBT3906 OT-23 OT-23, MIL-STD-202G, Amb61) MARKING SMD PNP TRANSISTOR 2a smd transistor NF TRANSISTOR SMD fr MARKING SMD PNP TRANSISTOR FR MARKING 25 SMD PNP TRANSISTOR smd transistor 2a smd 2a transistor transistor SMD 24 transistor SMD 104 NF marking TRANSISTOR SMD	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT-23 TRANSISTOR PNP FEATURES z 1. BASE As complementary type, the NPN transistor 2. EMITTER MMBT3904 is Recommended 3. COLLECTOR Epitaxial planar die construction	Original	OT-23 MMBT3906 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA, 100MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction 1. BASE (3)C 2. EMITTER	Original	OT-23 MMBT3906 OT-23 MMBT3904	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT591 SOT-23 TRANSISTOR PNP FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol	Original	OT-23 FMMT591 OT-23 -500mA -500mA, -50mA -100mA -50mA, 100MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR NPN FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol	Original	OT-23 OT-23 FMMT491	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR NPN FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol	Original	OT-23 OT-23 FMMT491 500mA 500mA 100mA 100MHz	PDF
FMMT591 Abstract: power ic 5v 1A Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT591 SOT-23 TRANSISTOR PNP FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol	Original	OT-23 FMMT591 OT-23 -500mA -500mA, -50mA -100mA -50mA, 100MHz FMMT591 power ic 5v 1A	PDF

Untitled Abstract: No abstract text available Text: ; S v m Se m i ; SOT-23 5YM5EMI SEMICONDUCTOR MMBT2907LT1 Plastic Encapsulate Transistors transistor SOT — 23 c pnp 1. BASE 2. EM IH E R 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W Tamb=25 °C) 2A Collector current Icm : -0.6 1.3 A Collector base voltage	OCR Scan	OT-23 MMBT2907LT1 100MHz MMBT2907 -50mA OT-23 950TPY 037TPY 550REF 022REF	PDF
Untitled Abstract: No abstract text available Text: : S v m Se m i : 5YM5EMI 5EMIC0 MDUCT0 R SOT -23 Plastic Encapsulate Transistors SOT — 23 BCW61 C TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.25 W Collector current Icm : -0.1 A 2A (Tamb=25 *C) 1.3 4H Collector base voltage	OCR Scan	BCW61 OT-23 950TPY 037TPY 550REF 022REF	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS ON . z Exceptional on-resistance and maximum DC current capability	Original	OT-23 CJ3401 OT-23	PDF
MMBT3904LT1 Abstract: MMBT3906LT1 Text: MMBT3906LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 1 0.97Ref. PNP Epitaxial Silicon Transistor 0.38Ref. MINO.1 0.4 1.9 Collector-Emitter Voltage: V CEO =-40V 3 0.124±0.10 2 Collector Dissipation:Pc=225mW	Original	MMBT3906LT1 OT-23 OT-23 97Ref. 38Ref. 225mW MMBT3904LT1. -10mA 100MHz 300uS MMBT3904LT1 MMBT3906LT1	PDF
2A MARKING SOT23 Abstract: No abstract text available Text: MMBT589 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING :589 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol	Original	MMBT589 OT-23 OT-23 -100A -10mA -500mA -500mA, -50mA -100mA 2A MARKING SOT23	PDF
MMBT3904LT1 Abstract: MMBT3906LT1 Text: MMBT3906LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 3 0.97Ref. 1 PNP Epitaxial Silicon Transistor 0.4 1.9 Collector-Emitter Voltage: V CEO =-40V 0.38Ref. MINO.1 0.124±0.10 2 Collector Dissipation:Pc=225mW	Original	MMBT3906LT1 OT-23 OT-23 97Ref. 38Ref. 225mW MMBT3904LT1. MMBT3904LT1 MMBT3906LT1	PDF
602 SOT Abstract: ic 353 datasheet MMBT3906 Sertech Labs Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2A B E SOT-23 Electrical Characteristics @ 25°C Unless Otherwise Specified	Original	MMBT3906 OT-23 350mWatts OT-23 30Vdc, IC/10 602 SOT ic 353 datasheet MMBT3906 Sertech Labs	PDF
72w SOT23 Abstract: LT1935 12V convert to 3.3V MBRM-120 design ideas CDRH4D28-2R2 CDRH5D28-4R2 LTC3709 boost 5v to 48v boost 2v SOT23 1A Text: DESIGN IDEAS 2A, 40V, SOT-23 Boost Converter Provides High Power in Small Spaces by Jeff Witt Introduction L1 1.8µH VIN 2.3V TO 4.8V C1 4.7µF ON OFF VIN SOT-23 Boost with 2A Switch Figure 1 shows the LT1935 generating 5V. Maximum load with VIN = 3.3V is	Original	OT-23 LT1935 600mA. LT1935 LTC3709 LTC3709 72w SOT23 12V convert to 3.3V MBRM-120 design ideas CDRH4D28-2R2 CDRH5D28-4R2 boost 5v to 48v boost 2v SOT23 1A	PDF
Marking 491 Abstract: fmmt491 Text: FMMT491 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking :491 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage	Original	FMMT491 OT-23 OT-23 500mA 100mA 100MHz Marking 491 fmmt491	PDF
2AY SOT-23 Abstract: IC MARKING 2ay PNP 2ay K3N SOT-23 Transistor 2Ay DS30059 MMBT3904 MMBT3906 surface mount npn transistor sot-23 vishay FE60 Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 -H .h -a T O P V IE W Mechanical Data_ Case: SOT-23, Molded Plastic	OCR Scan	MMBT3906 MMBT3904) OT-23, MIL-STD-202, OT-23 -10mA, 100MHz -100nA, 2AY SOT-23 IC MARKING 2ay PNP 2ay K3N SOT-23 Transistor 2Ay DS30059 MMBT3904 MMBT3906 surface mount npn transistor sot-23 vishay FE60	PDF

SOT-23 2A Search Results

SOT-23 2A Result Highlights (5)

SOT-23 2A Price and Stock

MACOM SMV2302A-SOT23-R

SOT-23 2A Datasheets Context Search

Untitled

Marking 2A

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Untitled

TRANSISTOR SMD MARKING CODE 2A

MMBD501

PNP transistor 1a 30v

MARKING SMD PNP TRANSISTOR 2a

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FMMT591

Untitled

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MMBT3904LT1

2A MARKING SOT23

MMBT3904LT1

602 SOT

72w SOT23

Marking 491

2AY SOT-23