SOT 363 MARKING CODE AL Search Results

2SC5343

Abstract: SUT486J kst60
Contextual Info: SUT486J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT486J Package Code 6X SOT-363 Outline Dimensions unit : mm

2SC5343

Abstract: SUT485J kst60 SUT485
Contextual Info: SUT485J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT485J Package Code SS SOT-363 Outline Dimensions unit : mm

2SC5343

Abstract: SUT495J kst60
Contextual Info: SUT495J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT495J Package Code FX SOT-363 Outline Dimensions unit : mm

kst60

Abstract: 2SA1980 SUT488J KST-6006-002
Contextual Info: SUT488J Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • General purpose transistor Feature • Two 2SA1980 chips in SOT-363 package Ordering Information Type NO. Marking SUT488J Package Code 8X SOT-363 Outline Dimensions unit : mm

kst60

Abstract: 2SA1980 SUT487J
Contextual Info: SUT487J Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • General purpose transistor Feature • Two 2SA1980 chips in SOT-363 package Ordering Information Type NO. Marking SUT487J Package Code XX SOT-363 Outline Dimensions unit : mm

SUT484J

Abstract: 2SA1980 2SC5343 KST-6002-004 kst60 cob ic
Contextual Info: SUT484J Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description • General purpose transistor Feature • Both 2SA1980 chip and 2SC5343 chip in SOT-363 package Ordering Information Type NO. Marking SUT484J Package Code 4X SOT-363 Outline Dimensions

kst60

Abstract: 2SA1980 2SC5343 SUT483J
Contextual Info: SUT483J Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description • General purpose transistor Feature • Both 2SA1980 chip and 2SC5343 chip in SOT-363 package Ordering Information Type NO. Marking SUT483J Package Code 3X SOT-363 Outline Dimensions

Contextual Info: SUR519J Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1207 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. SUR519J Marking S Package Code SOT-363 Outline Dimensions

marking s6 sot363

Contextual Info: CYStech Electronics Corp. SOT-363 Dimension Style: Pin 1. Emitter1 E1 Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6 *:Typical

sot363 marking 02

Abstract: marking code BK sot363 sot363 marking DATE code marking 34 EIA-481-1A ALPHA MARKING DATE CODE
Contextual Info: Package Details - SOT-363 Mechanical Drawing Lead Code: Part Marking: 3-4 Character Alpha/Numeric Code. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (10-December 2002)

338 marking code

Abstract: marking 131 SOT363 alpha OM-338
Contextual Info: Package Details SOT-363 Case Mechanical Drawing Lead Code: Part Marking: 3-4 Character Alpha/Numeric Code Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm R3 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details

knowledge sot-363 tm

Abstract: 46 sot363 marking code BK sot363
Contextual Info: Package Details - SOT-363 Mechanical Drawing Lead Code: Part Marking: 3-4 Character Alpha/Numeric Code. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R2 (5-November 2007)

SUB610

Contextual Info: SUB610 Semiconductor Schottky Barrier Diode Features • • • • Small SMD package & 3chip array Low reverse current: IR=1 ㎂ Max. @ VR=30V Low power rectified High reliability Ordering Information Type No. Marking SUB610 61B Package Code SOT-363 Outline Dimensions

Si1906DL

Contextual Info: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code

marking code PB

Abstract: SI1900DL-T1-E3 Si1900DL Si1900DL-T1
Contextual Info: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB

Si1900DL

Abstract: Si1900DL-T1
Contextual Info: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB

Si1901DL

Abstract: vishay siliconix code marking
Contextual Info: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability

Contextual Info: Sil 901 DL_ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) r D S (on) ( Q ) Id (mA) 3.8 e VGS = -4 .5 V -1 8 0 5.0 0 V GS = - 2 5 V -1 0 0 -2 0 SOT-363 SC-70 (6-Leads) S, [ 7 Gn [ F nr Marking Code

Si1900DL

Abstract: Si1900DL-T1
Contextual Info: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB

Si1405DL

Abstract: SOT363
Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code

Contextual Info: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code

SOT 363 marking code 62 low noise

Abstract: bf362 bc238c
Contextual Info: ,TELEFUNKEN ELECTRONIC file D fiRBOO^b Q00S201 2 • ALÛÛ ■ r - s t - z . } BF 362 • BF 363 TTEHLtHFODKlGStiMelectronic Creative Technologies Silicon NPN RF Planar Transistors Applications: BF 362: Gain controlled UHF/VHF Input stages 8F 363: Self oscillating mixer stages

SOT363 MARKING CODE 7M

Abstract: SOT363 MARKING CODE 7N SOT 363 marking 67 marking 52 sot-363 MARKING CODE 7C sot363 MUN5237DW1T1
Contextual Info: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

sot363 marking code 385

Abstract: SOT 363 marking 67 MUN5211DW1T1 MUN5211DW1T1G MUN5212DW1T1 MUN5212DW1T1G MUN5213DW1T1 MUN5213DW1T1G MUN5214DW1T1 MUN5214DW1T1G
Contextual Info: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base