SOT 236 CB Search Results

SOT 236 CB Result Highlights (5)

Part	Manufacturer	Description
MKZ6V2	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.2 V, SOT-23
MSZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, SOT-346
MUZ20V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 20 V, SOT-323
MKZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, SOT-23
MSZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, SOT-346

SOT 236 CB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Discrete POWER & Signal Technologies National Semiconductor Surface Mount Transistors NPN General Purpose Amplifiers and Switches Device No. SOT-23 Mark MMBT100 (N1) MMBT100A (N1A) Case Style TO-236 (49) TO-236 (49) (V) Min (V) Min (V) Min 75 45 6 75 45	OCR Scan	OT-23 MMBT100 MMBT100A O-236 MMBTA05 MMBT5551 MMBT2222	PDF
MMBT4124 Abstract: MMBT6515 MMPQ3904 MMPQ6700 PZT3904 Text: This I tr in Material a fcH fc-> LU □ NPN Surface Mount General Purpose Amplifiers and Switches Device No. SOT-23 Mark Case Style a Copyrighted □ -C V CBO ^CEO v EBO (V) Min (V) Min (V) Min 25 5 MMBT4124 (ZC) TO-236 (49) 30 a _□ 03 MMBT6515 (3J) TO-236	OCR Scan	OT-23 MMBT4124 O-236 MMBT6515 MMPQ3904 SO-16 MMBT4124 MMBT6515 MMPQ6700 PZT3904	PDF
LL-34 zener diode Abstract: LL-41 diode marking Text: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXB ZENER DIODE SURFACE MOUNT SILICON ZENER DIODE 3 1 2  1 1 2 2 SOD-323 SOD-523 FEATURES 2 1 LL-34 SYMBOL SOD-123 / SOD-323 SOD-523 / LL34 SOT-23  SOD-123 JEDEC TO-236 * Low reverse leakage current  2 SOT-23	Original	UMMSZ52XXB OD-323 OD-523 LL-34 OD-123 OD-523 OT-23 OD-123 O-236) LL-34 zener diode LL-41 diode marking	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXB ZENER DIODE SURFACE MOUNT SILICON ZENER DIODE 3 2 2 JEDEC TO-236 1 1 SOD-323 SOD-523 FEATURES 2 1 LL-34 SYMBOL SOD-123/SOD-323 SOD-523/LL34 SOT-23-3 2 2 * Low reverse leakage current 1 SOD-123 SOT-23-3 DESCRIPTION	Original	UMMSZ52XXB OD-123 OT-23-3 O-236) UMMSZ52XXB OD-323 OD-523 LL-34 OD-123/SOD-323	PDF
MMBT3904 Abstract: MMBT4401 MMPQ2222 MMPQ6502 NMT2222 PZT2222A MMBT3904 1A MARK SO SOT Text: This Surface Mount Transistors cr Material In a t-< fcH Copyrighted UJ a a a NPN Surface Mount General Purpose Amplifiers and Switches Device No. SOT-23 Mark MMBT4401 (2X) Case Style TO-236 (49) ^CBO ^CEO VffiO (V) (V) (V) Min Min Min 60 40 6 'cBO u Max	OCR Scan	OT-23 MMBT4401 O-236 MMPQ2222 SO-16 MMPQ6502" NMT2222 7MMPQ6502" MMBT3904 MMBT4401 MMPQ2222 MMPQ6502 NMT2222 PZT2222A MMBT3904 1A MARK SO SOT	PDF
MMBTH10 Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national Text: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 \| National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter	OCR Scan	MPSW92 bS01130 0Q37273 r-31-n MMBTA92 TL/G/10100-1 O-226AE O-236 OT-23) TL/G/10100-5 MMBTH10 t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national	PDF
Mark T92 Abstract: No abstract text available Text: This Pro Electron Series Material cr Ln CD b-1 b-1 ÜJ Pro Electron Surface Mount Bipolar Devices continued V CES Device No. (SOT-23 Mark) a Copyrighted o □ -C a BSR14 (U8) Ln ID Case Style TO-236 (49) V 1 ' ces ^C E O CBO (V) * *CBO (V) Min Min (nA)	OCR Scan	OT-23 Mark T92	PDF
Untitled Abstract: No abstract text available Text: MPSH20/MMBTH20 W A National Jim Semiconductor MPSH20 MMBTH20 Ih r ¡J TO- 236 SOT-23 TO-92 TL/G/10100-5 TL/G/10100-3 NPN RF Transistor Electrical Characteristics ta =25°c unless otherwise noted Parameter Symbol Min Typ Max Units O FF CH ARACTERISTICS V (BR)CEO	OCR Scan	MPSH20/MMBTH20 MPSH20 MMBTH20 OT-23) TL/G/10100-5 TL/G/10100-3 100/nAdc,	PDF
3.9V ZENER DIODE Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXB Preliminary ZENER DIODE SURFACE MOUNT SILICON ZENER DIODE 3 2 2  JEDEC TO-236 1 1 SOD-323 SOD-523 FEATURES 2 1 LL-34 SYMBOL SOD-123/SOD-323 SOD-523/LL34 SOT-23-3  2 2 * Low reverse leakage current  1 SOD-123	Original	UMMSZ52XXB O-236) OD-323 OD-523 LL-34 OD-123/SOD-323 OD-523/LL34 OT-23-3 OD-123 3.9V ZENER DIODE	PDF
Untitled Abstract: No abstract text available Text: MPSA56/MPSW56/MMBTA56 £ 5 \| National m im Semiconductor MPSA56 / if M MMBTA56 MPSW56 C iJ ir È 10-92 N ^ c 7^7 ! TO-236 (SOT- 23 TO- 226AE Tl/G/10100-5 B. c TL/G/10100-1 8c TL/G/10100-4 PNP General Purpose Amplifier Electrical Characteristics Symbol = 25°c unless otherwise noted	OCR Scan	MPSA56/MPSW56/MMBTA56 MPSA56 MPSW56 MMBTA56 TL/G/10100-1 O-236 226AE Tl/G/10100-5 TL/G/10100-4	PDF
PN4258 Abstract: process 65 Text: PN4258/MMBT4258 National Semiconductor Ju â PN4258 MMBT4258 K rO JJ B ¡I e < /n / TO - 236 TO- 9 2 SOT - 23 E. f T L /G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -1 PNP Switching Transistor Electrical Characteristics ta = 2 5 °c unless otherw ise noted Sym bol	OCR Scan	PN4258/MMBT4258 PN4258 MMBT4258 PN4258 process 65	PDF
IMBT4401 Abstract: No abstract text available Text: DIODES INC 32E D • 2Ô4Ô7T3 0DDD3b3 S * D I I SURFACE MOUNT TRANSISTORS NPN T R A N SIST O R S - TO-236 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) 1M 1N 6T 6U 6R 6S h FE @ 50-150 100-300 50-150 100-300 100-300 100-300 V ce/ I c VcE SAT V /m A	OCR Scan	O-236 OT-23) IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222 IMBT2222A	PDF
2n2369 Abstract: PN2369 2N2369 SOT-23 Text: 2N2369/PN2369/MMBT2369/MPQ2369 V glNational JuM Semiconductor 2N2369 PN2369 MMBT2369 U^ ffi/ T°-92 // T°-’8 U , TO- 236 SOT- 23 T L / G / ,0 00-7 Eg U T L /G /1 0 1 0 0 -9 MPQ2369 T L /G /1 0 1 0 0 -5 C T L /G /1 0 1 0 0 -1 NPN Switching Transistor Electrical Characteristics t a	OCR Scan	2N2369/PN2369/MMBT2369/MPQ2369 2N2369 PN2369 MMBT2369 MPQ2369 10/iA 20Vdc, 2N2369 SOT-23	PDF
KT503A Abstract: 2SC1330 BC340 LOW-POWER SILICON NPN 2N2534 45M40 2N2909 2N2868 Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate	Original	RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 KT503A 2SC1330 BC340 LOW-POWER SILICON NPN 2N2534 45M40 2N2909 2N2868	PDF

2N4250 motorola Abstract: bc154 KT501S LOW-POWER SILICON PNP BC313-16 Text: LOW-POWER SILICON PNP Item Number Part Number 10 20 TMPT956H4 2N5255 2N5256 TMPT812M4 2SA1037KFR 2SA1037KFR MMBA812M6 MMBA812M6 ~~g~~~~~: 25 30 35 . 40 45 50 BC479 2SA733 2SB819 TMPT956H5 2SA493G•TM· Y 2SB435G PN4250 A5T4250 2N4250 MPS4250 D29E7 BC313·1a	Original	BC160 2N3581 MMBA956H5 2N5819 GES5819 TP5819 D29E6 TIS93 2N4250 motorola bc154 KT501S LOW-POWER SILICON PNP BC313-16	PDF
50N240 Abstract: JE9093C LOW-POWER SILICON PNP HSE194 Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 200 200 200 200 200 200 200 200 200 200 FMMTA93 BSSn BSSn MPSA93 ESM693 2SA1330 2SA133005 2SA1255 2SA1376AL 200 200 200 200 200 200 200 200 200 85 90 95 772 30 30 30 30 30 30 30	Original	MPS-A93 BF693 MPSA930 2N6432 PH5415 PN5415 2SB718 BSS74S 50N240 JE9093C LOW-POWER SILICON PNP HSE194	PDF
2SA1020Y Abstract: 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 2SA661 TEC9015 2SA705 2SA1015L Text: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 Manufacturer Y(BR)CEO hFE Ie Max A fT (Hz) 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 120 2SA1326 TEDl602C NB122EH NB122FH	Original	TEC9015B 2SA661 2SB1002 2SB1059 2SB740 BFT71 BFT81 2SA493G 2SA1020Y 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 TEC9015 2SA705 2SA1015L	PDF
Untitled Abstract: No abstract text available Text: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage	Original	MMBT4401LT1 MMBT4401LT1/D	PDF
TO-236 Abstract: MMBT4403LT1 MMBT4403LT1G MMBT4403LT3 Text: MMBT4403LT1 Switching Transistor PNP Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage	Original	MMBT4403LT1 MMBT4403LT1/D TO-236 MMBT4403LT1 MMBT4403LT1G MMBT4403LT3	PDF
PN2222A MOTOROLA Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate	Original	RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 PN2222A MOTOROLA valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A	PDF
2N3609 Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625 Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate	Original	RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 2N3609 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625	PDF
BC558AP Abstract: TD401 BSX41 ED1802M LOW-POWER SILICON PNP 2N4917 TED1802L TED1802 Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 50 55 60 2SA467G•TM·O 2MA5090 2SA509G·TM·O 2SA509G·O ST8705 2SA608NP 2SA608SP 2N4917 2N5374 BSY59 ED1602D TED1802M ED1802M V741 V741 A5T4062 A8T4062 RN4062 ~~~~8~2 65 70 75 80 2N4062 BC558A	Original	A5T4058 A8T4058 RN4058 2N3058 2SA509 PET4058 2SA1052 2N4058 BC231A BC558AP TD401 BSX41 ED1802M LOW-POWER SILICON PNP 2N4917 TED1802L TED1802	PDF
MMBT5401LT1 Abstract: MMBT5401LT1G MMBT5401LT3 MMBT5401LT3G 2L SOT23 Text: MMBT5401LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage	Original	MMBT5401LT1 MMBT5401LT1 MMBT5401LT1G MMBT5401LT3 MMBT5401LT3G 2L SOT23	PDF
BC137 Abstract: LM3661TL-1.40 G2025 LOW-POWER SILICON PNP ST8500 BC137 800 BCY90 NB021 BCY91 2N85 Text: LOW-POWER SILICON PNP Item Number Part Number 10 NB023FL NB023FZ 2N4285 2SA987F NB021EV NB021FV NB023EV NB023FV 2SA987E 2SA880 ~~~j~~ 15 20 25 30 35 40 2SA721 2N1223 2S3010 2S3010 2N4937 2N4938 2N4939 2N4940 2N4941 2N4942 2N935 2S3210 2N5110 TIPP32 2S3020	Original	NB023FL NB023FZ 2N4285 2SA987F NB021EV NB021FV NB023EV NB023FV 2SA987E 2SA880 BC137 LM3661TL-1.40 G2025 LOW-POWER SILICON PNP ST8500 BC137 800 BCY90 NB021 BCY91 2N85	PDF

SOT 236 CB Search Results

SOT 236 CB Result Highlights (5)

SOT 236 CB Datasheets Context Search

Untitled

MMBT4124

LL-34 zener diode

Untitled

MMBT3904

MMBTH10

Mark T92

Untitled

3.9V ZENER DIODE

Untitled

PN4258

IMBT4401

2n2369

KT503A

2N4250 motorola

50N240

2SA1020Y

Untitled

TO-236

PN2222A MOTOROLA

2N3609

BC558AP

MMBT5401LT1

BC137