SOT 23 ZC Search Results

LRB411DLT1G

Abstract: LRB411DLT3G MARKING D3E
Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 2 SOT– 23 zConstruction Silicon epitaxial planar 3 CATHODE 1 ANODE

Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 2 SOT– 23 zConstruction Silicon epitaxial planar 3 CATHODE 1 ANODE

Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 2 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. SOT– 23 zConstruction Silicon epitaxial planar z Pb-Free package is available

Transistor 03 smd

Abstract: smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03
Contextual Info: SMD General Purpose Transistor NPN MMBT3904 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications  RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:

LRB421LT1G

Abstract: LRB421LT3G
Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB421LT1G LRB421LT1G zApplications Low power rectification 3 1 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 2 SOT– 23 zConstruction Silicon epitaxial planar 3 CATHODE 1 ANODE z We declare that the material of product

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT4124 TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2.4 1.3 0.95 0.4 2.9 Collector current ICM: 0.2 A Collector-base voltage V (BR) CBO:

BC859B 215

Abstract: motorola MMBT3906 sot-23 BCs56 BSX39 BC860C Motorola BCW71H 5H MARKING MARKING 5H BSX39 sot23 BC818-16
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued General-Purpose SOT-23 Transistors (continued) Pinout: 1-Base, 2-Emitter, 3-C ollector D evices are listed in o rd e r of descending breakdow n voltage. NPN Device Type hFE *T v BR(CEO) Min Max @ >C (mA) Min (MHz)

2n3904 npn fairchild

Abstract: 2N3904 2N4124 MMBT4124 2n3904 sot 23 SOT23B
Contextual Info: 2N4124 MMBT4124 C E C TO-92 BE SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904

2N3904

Abstract: 2N4124 MMBT4124 2N412 NPN sot23 mark NF
Contextual Info: N 2N4124 MMBT4124 C E C TO-92 BE SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904

diode cross reference

Abstract: diode hp 2800 motorola diode cross reference schottky diode cross reference led cross reference HP 2804 SCHOTTKY DIODES CROSS REFERENCE hp 2800 diode HSMS-3800 pin diode cross reference
Contextual Info: PIN and Schottky Diodes Cross Reference RF/mW Components Surface Mount PIN Diode Selection Guide SOT-23 Single Application VBR Attenuator 50 Ω 100 V HSMP-3800 D0 Attenuator 75 Ω 100 V HSMP-3810 E0 Dual Anode Dual Cathode Series Pair SOT-143 Common Common Unconnected

2n3904 sot 23

Contextual Info: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904

Contextual Info: S iM C O M D U C T O R 2N4124 MMBT4124 SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose am plifier and switch. The useful dynam ic range extends to 100 m A as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904

Contextual Info: Part Number: ZCBD48WA SOT-23 SURFACE MOUNT LED LAMP www.SunLED.com Package Schematics Features ● Ideal for indication light on hand held products ● Long life and robust package ● Standard Package: 2,000pcs/ Reel ● MSL Moisture Sensitivity Level : 3

Contextual Info: Part Number: ZCBD48WA SOT-23 SURFACE MOUNT LED LAMP www.SunLED.com Package Schematics Features ● Ideal for indication light on hand held products ● Long life and robust package ● Variety of lens types and color choices available ● Package: 2000pcs / reel

zc marking code

Abstract: 1SS321 zc marking diode
Contextual Info: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol

Contextual Info: KST4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

AUTOMATIC ROOM LIGHT CONTROLLER with visitor counter

Abstract: schematic diagram 48V solar charge controller solar inverters schematic diagram 555 timer for buck boost converter flash schematic diagram inverter 12v to 24v 30a resonant self oscillation half bridge LED ballast solar charger schematic 24V 48v battery charger schematic diagram Siliconix DataBook circuit diagram for 48v automatic battery charger
Contextual Info: LINEAR TECHNOLOGY FEBRUARY 2001 IN THIS ISSUE… COVER ARTICLE New 5-Lead SOT-23 Oscillator is Small, Very Stable and Easy to Use . 1 Andy Crofts Issue Highlights . 2 VOLUME XI NUMBER 1

Contextual Info: v is h a y Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical BZT55B. / TZMB.

Contextual Info: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)

BZM55B

Abstract: BZM55C
Contextual Info: BZM55C2V0-BZM55C75 Zener diode Features 1. Saving space 2. Fits onto SOD 323/SOT 23 footprints 3. Micro Melf package Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol

Contextual Info: FMMT4124 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.33 W (Tamb=25OC) * Collector current ICM : 0.2 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

BZM55B

Abstract: BZM55C
Contextual Info: BZM55C Series Zener diode Features 1. Saving space 2. Fits onto SOD 323/SOT 23 footprints 3. Micro Melf package Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value

Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB421LT1G LRB421LT1G S-LRB421LT1G zApplications Low power rectification 3 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 4) S- Prefix for Automotive and Other Applications Requiring