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    SOT 23 70.2 Search Results

    SOT 23 70.2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT 23 70.2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    702 TRANSISTOR smd SOT23

    Abstract: 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718
    Text: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case


    Original     		PDF BFS17 BFS17R BFS17W OT-23 OT-23 BFS17W 702 TRANSISTOR smd SOT23 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718

    70.2 marking smd npn Transistor

    Abstract: SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23
    Text: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case


    Original     		PDF BFS17 BFS17R BFS17W OT-23 OT-23 BFS17W 70.2 marking smd npn Transistor SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23

    SOT23 marking 658

    Abstract: No abstract text available
    Text: BFS17A / BFS17AR / BFS17AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • Low noise figure • High power gain • Small collector capacitance 2 3 1 SOT-23 Applications Wide band, low noise, small signal amplifiers up to


    Original     		PDF BFS17A BFS17AR BFS17AW OT-23 OT-23 BFS17AW SOT23 marking 658

    Untitled

    Abstract: No abstract text available
    Text: BFS17A / BFS17AR / BFS17AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • Low noise figure • High power gain • Small collector capacitance 2 3 1 SOT-23 Applications Wide band, low noise, small signal amplifiers up to


    Original     		PDF BFS17A BFS17AR BFS17AW OT-23 OT-23 BFS17AW

    70.2 marking smd npn Transistor

    Abstract: transistor smd 661 752 702 TRANSISTOR smd SOT23 smd transistor marking j5 smd marking 271 Sot 704 TRANSISTOR smd SOT23 SMD IC marking 632 SOT23 marking 828 SOT MARKING 213 transistor smd marking NA sot-23
    Text: BFS17 / BFS17R / BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • High power gain SMD package e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 Applications


    Original     		PDF BFS17 BFS17R BFS17W 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23 70.2 marking smd npn Transistor transistor smd 661 752 702 TRANSISTOR smd SOT23 smd transistor marking j5 smd marking 271 Sot 704 TRANSISTOR smd SOT23 SMD IC marking 632 SOT23 marking 828 SOT MARKING 213 transistor smd marking NA sot-23

    70.2 marking smd npn Transistor

    Abstract: smd marking 271 Sot SMD IC marking 632 transistor smd 661 752 704 TRANSISTOR smd SOT23 702 TRANSISTOR smd SOT23 BFS17 BFS17R BFS17W transistor smd marking NA sot-23
    Text: BFS17 / BFS17R / BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • High power gain SMD package e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 Applications


    Original     		PDF BFS17 BFS17R BFS17W OT-23 2002/95/EC 2002/96/EC OT-323 BFS17 OT-23 70.2 marking smd npn Transistor smd marking 271 Sot SMD IC marking 632 transistor smd 661 752 704 TRANSISTOR smd SOT23 702 TRANSISTOR smd SOT23 BFS17W transistor smd marking NA sot-23

    2SA1978

    Abstract: NE02133 NE97833 NE97833-T1B-A S21E
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97833 NE02133 NE97833 2SA1978 2SA1978 NE02133 NE97833-T1B-A S21E

    221-166

    Abstract: 2SA1978 NE02133 NE97833 NE97833-T1 S21E k 2445 transistor
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97833 NE02133 NE97833 2SA1978 NE97833-T1 24-Hour 221-166 2SA1978 NE02133 NE97833-T1 S21E k 2445 transistor

    221-166

    Abstract: 2SA1978 transistor marking T93 NE02133 NE97833 S21E ne02133 MARKING
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97833 NE02133 NE97833 2SA1978 24-Hour 221-166 2SA1978 transistor marking T93 NE02133 S21E ne02133 MARKING

    74299

    Abstract: 44071 transistor 104462 39158 76620 54175 82258 75604 TRANSISTOR SOT23, Vbe 8V THN6201S
    Text: THN6201S NPN Planer RF TRANSISTOR SOT-23 □ DESCRIPTION The THN6201S is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT23 package □ FEATURES


    Original     		PDF THN6201S OT-23 THN6201S 12GHz 800GHz 000GHz 200GHz 400GHz 600GHz 74299 44071 transistor 104462 39158 76620 54175 82258 75604 TRANSISTOR SOT23, Vbe 8V

    Untitled

    Abstract: No abstract text available
    Text: BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • Low noise figure High power gain e3 Small collector capacitance Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original     		PDF BFS17A BFS17AR BFS17AW 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23

    626 057-0

    Abstract: BFS17A BFS17AR BFS17AW 682 MARKING SOT-23 944 SOT323
    Text: BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • Low noise figure High power gain e3 Small collector capacitance Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original     		PDF BFS17A BFS17AR BFS17AW OT-23 2002/95/EC 2002/96/EC OT-323 BFS17A OT-23 626 057-0 BFS17AW 682 MARKING SOT-23 944 SOT323

    BFR92R

    Abstract: BFR92 transistor bfr92
    Text: BFR92/BFR92R Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1 Plastic case SOT 23


    Original     		PDF BFR92/BFR92R BFR92 BFR92R D-74025 17-Apr-96 transistor bfr92

    La 7833

    Abstract: sot 89 2903 CGB7010-BD CGB7010-SC CGB7010-SC-0G00 CGB7010-SC-0G0T CGB7010-SP-0G00 CGB7010-SP-0G0T MCH185A101JK PB-CGB7010-SC-0000
    Text: DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7010-SC -BD Features Functional Block Diagram (SOT-89) 35.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.5 dB Gain @ 850 MHz 20.0 dBm P1dB @ 850 MHz


    Original     		PDF 23-May-06 CGB7010-SC OT-89 OT-86 La 7833 sot 89 2903 CGB7010-BD CGB7010-SC CGB7010-SC-0G00 CGB7010-SC-0G0T CGB7010-SP-0G00 CGB7010-SP-0G0T MCH185A101JK PB-CGB7010-SC-0000

    BFS17

    Abstract: transistor BFs 18 BFS17R marking E1
    Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


    Original     		PDF BFS17 BFS17R D-74025 transistor BFs 18 marking E1

    "marking E1"

    Abstract: BFS17 BFS17R sot 23 transistor 70.2
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4


    Original     		PDF BFS17/BFS17R BFS17 BFS17R D-74025 17-Apr-96 "marking E1" sot 23 transistor 70.2

    MCH185A101J

    Abstract: CGB7003-BD CGB7003-SC CGB7003-SC-0G00 CGB7003-SC-0G0T CGB7003-SP-0G00 CGB7003-SP-0G0T MCH185A101JK PB-CGB7003-SC-0000 PB-CGB7003-SP-0000
    Text: DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7003-SC -BD Features Functional Block Diagram (SOT-89) Low Operating Voltage: 5V 31.5 dBm Output IP3 @ 850 MHz 2.9 dB Noise Figure @ 850 MHz 20.7 dB Gain @ 850 MHz


    Original     		PDF 23-May-06 CGB7003-SC OT-89 OT-86 MCH185A101J CGB7003-BD CGB7003-SC CGB7003-SC-0G00 CGB7003-SC-0G0T CGB7003-SP-0G00 CGB7003-SP-0G0T MCH185A101JK PB-CGB7003-SC-0000 PB-CGB7003-SP-0000

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY TECHNICAL DATA a 1.6 V, Micro-Power, 8/10/12-Bit ADCs in 6 Lead SOT-23 AD7466/AD7467/AD7468 Preliminary Technical Data FEATURES Specified for VDD of 1.6 V to 3.6 V Low Power: 0.62 typ mW at 100 kSPS with 3V Supplies 0.48 typ mW at 50 kSPS with 3.6 V Supplies


    Original     		PDF 200KSPS OT-23 8/10/12-Bit AD7466/AD7467/AD7468 AD7466/67. MO-178AB MO-187AA

    AD7466

    Abstract: AD7466BRT-REEL7 AD7467 AD7468 DB10 AD7466BRT-RL2 Motorola transistor 7144
    Text: 1.6 V, Micropower 12-/10-/8-Bit ADCs in 6-Lead SOT-23 AD7466/AD7467/AD7468* FEATURES Specified for VDD of 1.6 V to 3.6 V Low Power: 0.62 mW Typ at 100 kSPS with 3 V Supplies 0.48 mW Typ at 50 kSPS with 3.6 V Supplies 0.12 mW Typ at 100 kSPS with 1.6 V Supplies


    Original     		PDF 12-/10-/8-Bit OT-23 AD7466/AD7467/AD7468* OT-23 12-/10-/8-BIT AD7466/AD7467/AD7468 GND66/AD7467/AD7468 OT-23] MO-178AB MO-187AA AD7466 AD7466BRT-REEL7 AD7467 AD7468 DB10 AD7466BRT-RL2 Motorola transistor 7144

    can AD797 be used with single power supply

    Abstract: IC specification terminology AD7468BRT-R2 power transformer T2 v6 AD7466 AD7467 AD7468 DB10 ad797 rev b
    Text: 1.6 V, Micropower 12-, 10-, and 8-Bit ADCs in 6-Lead SOT-23 AD7466/AD7467/AD7468 FUNCTIONAL BLOCK DIAGRAM FEATURES Specified for VDD of 1.6 V to 3.6 V Low power: 0.62 mW typ at 100 kSPS with 3 V supplies 0.48 mW typ at 50 kSPS with 3.6 V supplies 0.12 mW typ at 100 kSPS with 1.6 V supplies


    Original     		PDF OT-23 AD7466/AD7467/AD7468 OT-23 12-/10-/8-BIT AD7466/AD7467/AD74sed EVAL-AD7466CB) C02643 can AD797 be used with single power supply IC specification terminology AD7468BRT-R2 power transformer T2 v6 AD7466 AD7467 AD7468 DB10 ad797 rev b

    Explain VDD terminology

    Abstract: AD7466 AD7467 AD7468 DB10
    Text: 1.6 V, Micropower 12-, 10-, and 8-Bit ADCs in 6-Lead SOT-23 AD7466/AD7467/AD7468 FUNCTIONAL BLOCK DIAGRAM FEATURES Specified for VDD of 1.6 V to 3.6 V Low power: 0.62 mW typ at 100 kSPS with 3 V supplies 0.48 mW typ at 50 kSPS with 3.6 V supplies 0.12 mW typ at 100 kSPS with 1.6 V supplies


    Original     		PDF OT-23 AD7466/AD7467/AD7468 OT-23 12-/10-/8-BIT AD7466/AD7467/AD74be EVAL-AD7466CB) C02643 Explain VDD terminology AD7466 AD7467 AD7468 DB10

    BFR92R

    Abstract: sot 23 transistor 70.2 MAR 641 TRANSISTOR
    Text: Temic BFR92/BFR92R Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR92 Marking: PI Plastic case SOT 23


    OCR Scan     		PDF BFR92/BFR92R BFR92 BFR92R 26-Mar-97 sot 23 transistor 70.2 MAR 641 TRANSISTOR

    transistor MAR 819

    Abstract: transistor MAR 543 sl2 357 BFS17
    Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4


    OCR Scan     		PDF BFS17/BFS17R BFS17 BFS17R 26-Mar-97 transistor MAR 819 transistor MAR 543 sl2 357

    Untitled

    Abstract: No abstract text available
    Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1


    OCR Scan     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99