RTO-B
Abstract: No abstract text available
Text: RTO-B Bauform SOT 227B ISOTOP / Size SOT 227B (ISOTOP) ISA-PLAN - Präzisionswiderstände / Precision resistors Technische Daten / technical data Widerstandswerte Resistance values 1, 2, 5, 10, 15, 20, 33, 50, 68, 100, 150, 200, 330, 470 mOhm Toleranz
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MIL-STD-202
120dB
RTO-B-2013-05-16
D-35683
RTO-B
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PDF
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Untitled
Abstract: No abstract text available
Text: RTO-A Bauform SOT 227B ISOTOP / Size SOT 227B (ISOTOP) ISA-PLAN - Präzisionswiderstände / Precision resistors Technische Daten / technical data Widerstandswerte Resistance values 0.5, 1, 2, 3.3, 5, 10, 15, 20, 33, 47, 50, 100 Ohm Toleranz Tolerance 1 %, 5 % < 10 Ohm
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Original
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MIL-STD-202
120dB
RTO-A-2013-05-16
D-35683
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXXN100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings
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IXXN100N60B3H1
10-30kHz
150ns
OT-227B,
E153432
IF110
100N60B3
12-01-11-B
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR
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IXXN200N60B3H1
IC110
110ns
10-30kHz
OT-227B,
E153432
IF110
200N60B3
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DMA150YA1600NA
Abstract: dma150 SOT227B package IXYS DMA150YA1600NA DMA150YC1600NA
Text: DMA150YA1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Anode Part number DMA150YA1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips
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Original
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DMA150YA1600NA
OT-227B
60747and
20130128a
DMA150YA1600NA
dma150
SOT227B package
IXYS DMA150YA1600NA
DMA150YC1600NA
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 650V GenX3TM w/ Sonic Diode IXYN100N65C3H1 VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 90A 2.30V 50ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings
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IXYN100N65C3H1
IC110
20-60kHz
OT-227B,
E153432
IF110
100N65C3
0-24-13-A
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PDF
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Untitled
Abstract: No abstract text available
Text: MCO100-12io1 Thyristor VRRM = 1200 V I TAV = 101 A VT = 1.3 V Single Thyristor Part number MCO100-12io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip
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MCO100-12io1
OT-227B
60747and
20140123a
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PDF
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CLA110MB1200NA
Abstract: No abstract text available
Text: CLA110MB1200NA High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.04 V AC Controlling 1~ full-controlled Part number CLA110MB1200NA Backside: Isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● AC controller for line frequency
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CLA110MB1200NA
OT-227B
60747and
20130408b
CLA110MB1200NA
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IXXN110N65C4H1
Abstract: E8 55A DIODE ixxn110n65c z 683
Text: Advance Technical Information XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings
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20-60kHz
IXXN110N65C4H1
IC110
OT-227B,
E153432
IF110
50/60Hz
100N65C4H1
IXXN110N65C4H1
E8 55A DIODE
ixxn110n65c
z 683
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PDF
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ixxn110n65
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings
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10-30kHz
IXXN110N65B4H1
IC110
OT-227B,
E153432
IF110
50/60Hz
VCE00
110N65B4H1
ixxn110n65
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PDF
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DMA150YC1600NA
Abstract: DMA150YA1600NA
Text: DMA150YC1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Cathode Part number DMA150YC1600NA Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips
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DMA150YC1600NA
OT-227B
60747and
20130128a
DMA150YC1600NA
DMA150YA1600NA
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PDF
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Untitled
Abstract: No abstract text available
Text: MCO100-16io1 Thyristor VRRM = 1600 V I TAV = 101 A VT = 1.3 V Single Thyristor Part number MCO100-16io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip
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Original
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MCO100-16io1
OT-227B
60747and
20140123a
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PDF
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IXYN100N120C3H1
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR
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IXYN100N120C3H1
IC110
110ns
OT-227B,
E153432
IF110
100N120C3
IXYN100N120C3H1
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PDF
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IXGN72N60C3H1
Abstract: No abstract text available
Text: Preliminary Technical Information IXGN72N60C3H1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed low Vsat PT IGBTs 40-100 kHz switching = = ≤£ = 600V 52A 2.5V 55ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES
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IXGN72N60C3H1
IC110
OT-227B,
E153432
72N60C3
0-16-08-A
IXGN72N60C3H1
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PDF
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DMA150YA1600NA
Abstract: DMA150YC1600NA
Text: DMA150YC1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Cathode Part number DMA150YC1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips
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DMA150YC1600NA
OT-227B
60747and
20130128a
DMA150YA1600NA
DMA150YC1600NA
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PDF
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CMA80PD1600NA
Abstract: No abstract text available
Text: CMA80PD1600NA advanced Thyristor VRRM = 2x 1600 V I TAV = 80 A VT = 1.29 V Phase leg Part number CMA80PD1600NA Backside: isolated 4 3 1 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip
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Original
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CMA80PD1600NA
OT-227B
60747and
CMA80PD1600NA
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PDF
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Untitled
Abstract: No abstract text available
Text: MCO150-12io1 Thyristor VRRM = 1200 V I TAV = 158 A VT = 1.37 V Single Thyristor Part number MCO150-12io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip
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Original
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MCO150-12io1
OT-227B
60747and
20140123a
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PDF
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Untitled
Abstract: No abstract text available
Text: MCO150-16io1 Thyristor VRRM = 1600 V I TAV = 158 A VT = 1.37 V Single Thyristor Part number MCO150-16io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip
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Original
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MCO150-16io1
OT-227B
60747and
20140123a
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PDF
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DSA300I45NA
Abstract: No abstract text available
Text: DSA300I45NA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 300 A VF = 0.76 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I45NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I45NA
OT-227B
60747and
20120907a
DSA300I45NA
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PDF
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Untitled
Abstract: No abstract text available
Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 300 V I FAV = 300 A VF = 0.94 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I200NA
OT-227B
60747and
20120907a
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PDF
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DSA300I200NA
Abstract: No abstract text available
Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 300 A VF = 0.94 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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Original
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DSA300I200NA
OT-227B
60747and
20120907a
DSA300I200NA
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYN120N120C3 1200V XPTTM IGBTs GenX3TM High-Speed IGBTs for 20-50 kHz Switching VCES = IC110 = VCE sat tfi(typ) = 1200V 120A 3.20V 96ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions E Maximum Ratings VCES
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IXYN120N120C3
IC110
OT-227B,
E153432
120N120C3
9P-C91)
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PDF
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DMA150YA1600NA
Abstract: DMA150YC1600NA
Text: DMA 150 YC 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier half 3~ Bridge, Common Cathode Part number 1600 V 150 A 1.12 V 1 3 2 4 Backside: isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline
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OT-227B
60747and
DMA150YA1600NA
DMA150YC1600NA
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PDF
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CLA100PD1200NA
Abstract: CLA60PD1200NA
Text: CLA60PD1200NA High Efficiency Thyristor VRRM = 2x 1200 V I TAV = 60 A VT = 1.09 V Phase leg Part number CLA60PD1200NA Backside: Isolated 4 3 1 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip
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Original
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CLA60PD1200NA
OT-227B
60747and
20130408b
CLA100PD1200NA
CLA60PD1200NA
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PDF
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