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    SONY HIGH SPEED BICMOS SYNCHRONOUS STATIC RAM Search Results

    SONY HIGH SPEED BICMOS SYNCHRONOUS STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-USB2AMBMMC-001 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') Datasheet
    CS-USB2AMBMMC-002 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') Datasheet
    TLP2304 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed / IPM driver, 1 Mbps, 3750 Vrms, 5pin SO6 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2766A Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed, 20 Mbps, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    SONY HIGH SPEED BICMOS SYNCHRONOUS STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    octal tri state buffer ic

    Abstract: sony SA10 SA11 SA12 SA14 SA17 CXK77B1840GB
    Text: SONY CXK77B1840GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    Original     		CXK77B1840GB A/4/45A/45 CXK77B1840 144-words 18-bits. page-13 page-21) page-25) 256Kx18, octal tri state buffer ic sony SA10 SA11 SA12 SA14 SA17 CXK77B1840GB PDF

    octal tri state buffer ic

    Abstract: CXK77B3641GB SA10 SA11 SA12 SA13 SA14 SA15 SA16 CXK77B3641GB-45
    Text: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    Original     		CXK77B3641GB CXK77B3641 072-words 36-bits. page-19) page-10 Page-11) 128Kx36, octal tri state buffer ic CXK77B3641GB SA10 SA11 SA12 SA13 SA14 SA15 SA16 CXK77B3641GB-45 PDF

    octal tri state buffer ic

    Abstract: sony SA10 SA11 SA12 SA13 SA14 SA15 SA17 CXK77B1841GB
    Text: SONY CXK77B1841GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1841 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    Original     		CXK77B1841GB CXK77B1841 144-words 18-bits. page-19) page-10 page-11) 256Kx18, octal tri state buffer ic sony SA10 SA11 SA12 SA13 SA14 SA15 SA17 CXK77B1841GB PDF

    octal tri state buffer ic

    Abstract: sony CXK77B3640GB SA10 SA11 SA12 SA14 SA16
    Text: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    Original     		CXK77B3640GB A/4/45A/45 CXK77B3640 072-words 36-bits. page-13 page-21) 128Kx36, octal tri state buffer ic sony CXK77B3640GB SA10 SA11 SA12 SA14 SA16 PDF

    Untitled

    Abstract: No abstract text available
    Text: CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


    Original     		CXK77B3611AGB CXK77B3611AGB-5/6 CXK77B3611AGB-5 200MHz 167MHz 119TBGA CXK77B3611AGB BGA-119P-01 PDF

    CXK77B3611AGB

    Abstract: CXK77B3611AGB-5
    Text: CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input


    Original     		CXK77B3611AGB CXK77B3611AGB-5/6 CXK77B3611AGB-5 200MHz 167MHz CXK77B3611AGB BGA-119P-01 CXK77B3611AGB-5 PDF

    cxk77b3611

    Abstract: KJE 6A
    Text: SONY CXK77B3611 32,768-WORD by 36-BIT HIGH SPEED BiCMOS SYNCHRONOUS STATIC RAM -5/6/7 Advanced Information Description The CXK77B3611 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 32,768-words by 36-bits. This synchronous SRAM integrates input registers, high speed SRAM, output registers/latches and write buffers onto


    OCR Scan     		CXK77B3611 768-WORD 36-BIT CXK77B3611 768-words 36-bits. 3fl53fl3 00Q7423 32KX36-6, KJE 6A PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    OCR Scan     		CXK77B3641GB CXK77B3641 072-words 36-bits. page-19) page-10 Page-11) 128Kx36, PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    OCR Scan     		CXK77B3641GB CXK77B3641 072-words 36-bits. page-19) page-10 Page-11) 128Kx36, PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    OCR Scan     		CXK77B3640GB A/4/45A/45 CXK77B3640 072-words 36-bits. page-13 page-21) 128Kx36, PDF

    CXK77B1840GB

    Abstract: SA12 SA13 SA14 SA15 SA17
    Text: CXK77B1840GB SONY 4A/45A 4Mb Late Write HSTL High Speed Synchronous SRAM (256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    OCR Scan     		CXK77B1840GB A/45A CXK77B1840 144-words 18-bits. page-13 page-21) page-25) 256Kxl8, CXK77B1840GB SA12 SA13 SA14 SA15 SA17 PDF

    CXK77B1841GB

    Abstract: SA12 SA13 SA14 SA15 SA16 SA17
    Text: SONY CXK77B1841GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1841 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    OCR Scan     		CXK77B1841GB CXK77B1841 144-words 18-bits. page-19) page-10 page-11) 256Kxl8, SA12 SA13 SA14 SA15 SA16 SA17 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B1840GB 4A/45A 4Mb Late Write HSTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    OCR Scan     		CXK77B1840GB A/45A CXK77B1840 144-words 18-bits. 925i2 page-13 page-21) page-25) 256Kxl8, PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B1840GB 4A/45A 4Mb Late Write HSTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    OCR Scan     		CXK77B1840GB A/45A CXK77B1840 144-words 18-bits. 925i2 page-13 page-21) page-25) PDF

    CXK77B3640GB

    Abstract: SA12 SA13 SA14 SA15 SA16
    Text: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    OCR Scan     		CXK77B3640GB A/4/45A/45 CXK77B3640 072-words 36-bits. 075i2 page-13 page-21) 128Kx36, SA12 SA13 SA14 SA15 SA16 PDF

    CXK77B3641GB

    Abstract: SA12 SA13 SA14 SA15 SA16
    Text: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM , output registers/latches, and a one-deep write


    OCR Scan     		CXK77B3641GB CXK77B3641 072-words 36-bits. page-20) page-19) page-10 Page-11) 128Kx36, CXK77B3641GB SA12 SA13 SA14 SA15 SA16 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    OCR Scan     		CXK77B3641GB CXK77B3641 072-words 36-bits. page-20) page-19) page-10 Page-11) 128Kx36, PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY -6/7 CXK77B1810 6 5 ,5 3 6 -w o r d by 18- b it h i g h s p e e d BiCMOS s y n c h r o n o u s s t a t i c r a m Advanced Information Description The CXK77B1810 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 65,536-words by 18-bits. This synchronous SRAM integrates input registers,


    OCR Scan     		CXK77B1810 CXK77B1810 536-words 18-bits. fl3fi23Ã 64KX18-6, PDF

    3B-36

    Abstract: 77B18
    Text: SONY CXK77B1810 6 5 ,5 3 6 - w o r d by 1 8 - b it h i g h s p e e d BiCMOS s y n c h r o n o u s s t a t i c r a m -5/6/7 Advanced Information Description The CX K 77B1810 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 65,536-words by


    OCR Scan     		CXK77B1810 77B1810 536-words 18-bits. 64KX18-5. 64KX18-5, 3B-36 77B18 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY I CXK77B3611AGB » High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


    OCR Scan     		CXK77B3611AGB CXK77B3611AGB-5/6 CXK77B3611AGB-5 200MHz 167MHz 119TBGA BGA-119P-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B3611AGB“ High Speed Bi-CMOS Synchronous Static RAM Preliminary Description 119 pin BGA Plastic The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


    OCR Scan     		CXK77B3611AGBâ CXK77B3611AGB-5/6 CXK77B3611AGB-5 200MHz 167MHz 119TBGA A3fl23fl3 CXK77B3611AGB BGA-119P-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B3611AGB* High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B3611AGB-5/6 is a high speed 1M bit 119 pin BGA Plastic Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


    OCR Scan     		CXK77B3611AGB* CXK77B3611AGB-5/6 200MHz CXK77B3611AGB-5 167MHz 119TBGA CXK77B3611AGB PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B181OAGB-5/6 is a high speed 1M bit 119 pin BGA Plastic Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


    OCR Scan     		CXK77B1810AGB-5, CXK77B1810AGB-6 CXK77B181OAGB-5 200MHz 167MHz 119TBG PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY C X K 7 7 B 1 8 High Speed Bi-CMOS Synchronous Static RAM 1 A G B s * Preliminary Description The CXK77B181OAGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


    OCR Scan     		CXK77B181OAGB-5/6 CXK77B181OAGB-5 167MHz ci0000000Â PDF