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    Untitled

    Abstract: No abstract text available
    Text: CXK5816PN/M SONY 2K-word X 8 bit High Speed CM O S Static RAM D escription The CXK5816PN /M static RAM organized operates from a single suitable for use in high in w hich battery back Package Outline is a 1 6 ,3 8 4 bits high speed CMOS as 2 ,0 4 8 words by 8 bits and


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    PDF CXK5816PN/M CXK5816PN 100jttW s/120ns/150n

    sony cxk5816m

    Abstract: CXK5816PN cxk5816m 5b2 3h
    Text: SONY CXK5816PN/M S 'S 2048-w ord x 8 bit High Speed CMOS Static RAM D escrip tion Unit: mm Package O utline C X K 5816P N /M is a 1 6 ,3 8 4 bits high speed CMOS static RAM organized as 2 ,0 4 8 w ords by 8 bits and operates CXK5816PN 2 4 Pin DIP Plastic


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    PDF CXK5816PN/M 2048-word CXK5816PN/M CXK5816PN 100ns 120ns 100jaW 125mW CXK581 sony cxk5816m cxk5816m 5b2 3h

    HM6116

    Abstract: MB8416A sony 2048-word x 8 Bit High Speed CMOS Static RAM CXK5816PN sony cxk5816pn CXK5816M
    Text: SONY CXK5816PN/M 2 K-word X 8 bit High Speed CMOS Static RAM D escription P a ck a g e O utline Unit: mm T h e C X K 5 8 1 6 P N / M is a 1 6 ,3 8 4 bits high s p e e d C M O S sta tic RAM o rganized a s 2 ,0 4 8 w o rd s b y 8 bits and C X K 5816PN 2 4 pin D IP


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    PDF CXK5816PN/M CXK5816PN/M 100/xW 125mW 100ns/120ns/150ns HM6116 MB8416A sony 2048-word x 8 Bit High Speed CMOS Static RAM CXK5816PN sony cxk5816pn CXK5816M

    CXK5816M

    Abstract: MB8416A CXK5816PN HM6116
    Text: SOIMY CXK5816PN/M 2K-word X 8 bit High Speed CMOS Static RAM Description The C X K 5 8 1 6 P N /M sta tic RAM orga n ized o perates fro m a sin g le su itab le fo r use in h igh in w h ic h b atte ry back Package O u tline is a 1 6 ,3 8 4 b its h igh speed CMOS


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    PDF CXK5816PN/M 100/xW 125mW 100ns/120ns/150ns CXK5816M MB8416A CXK5816PN HM6116

    BR6116-100

    Abstract: inverter welder schematic BR6116-45 CDM6116A-3 CMD6116-1 24PIN CDM6116A-9 CMB6116-2 UPD446 CDM6116
    Text: - 48 - 16 K m % it £ ÍS KSI OC A TMC max ns) KAC max (ns) 4 CMOS - , TOE max (ns) TOH din (ns) * y TOD max (ns) y S t a t i c RAM (2 0 4 8 x 8 ) n m TtfP T U S itin min (n¡;) (as) TDH rain (ns) TfD (ns) Tffl max (ns) V D D or V C C (V) 24P I N 6 II A


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    PDF 2048x8) 24PIN 5116S/l-10 5116S/L-12 BR6116-100 CY7C128-35 CY7C128-45 CY7C128-55 CY7C128A-20 CY7C128A-25 inverter welder schematic BR6116-45 CDM6116A-3 CMD6116-1 CDM6116A-9 CMB6116-2 UPD446 CDM6116

    MK4802

    Abstract: BR6116-100 BR6116-45 MK48Z02 CDM6116A-9 F3528-35 24PIN CY7C128-45 CY7C128-55 CY7C128A-15
    Text: - 16 K X nMOS 'f S t a t i c f RAM iî 2 0 4 8 x 8 « % it £t OC) TAAC aax (ns) TCAC (us) TOE max (ns) TOH min (ns) TOD max (ns) TWP «in (ns) TDS •in (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) A M ¿&&ÍEH m 2 4 P I N IDD aax (ibA)


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    PDF 24PIN Am9128-15 Aa9128-20 CY7C128-35 CY7C128-45 CY7C128-55 CY7C128A-20 CY7C128A-25 CY7C12M-35 CY7C128A-45 MK4802 BR6116-100 BR6116-45 MK48Z02 CDM6116A-9 F3528-35 CY7C128A-15