SOLITRON TRANSISTOR Search Results

185AJJ006

Abstract: solitron devices SOLITRON Solitron Transistor
Contextual Info: SOLITRON DEVICES 561 863 5946 11/21/02 18:18 0 :02/08 N0:092 SOLITRON DEVICES, INC. PRODUCT SPECIFICATION SOLITRON P/N: 183AJJ006 SDT7AQ6 CUSTOMER P/N: REV. ORIGINATOR : GENERAL PURPOSE REFERENCE SPEC: REV: PKG; PARTS DWG: EDS NO: DESIGN LIMITS: REFERENCE DEVICE:

80t71

Abstract: SOLITRON 18368 a602 SDT712 SDT714 SDT71A solitron devices
Contextual Info: SOLITRON DEVICES INC Ì>E |fl3fc,flb0 a DOOOt.E'i t 8368602 SOLITRON DEVICES INC 61C 00629 POWER TRANSISTORS SDT712 SDT71A T ' i 3 - 1* NPN SILICON POWER TRANSISTORS HIGH VOLTAGE 3 AMPERES FEATURES PLANAR CONSTRUCTION FAST SWITCHING HIGH RELIABILITY APPLICATIONS

solitron transistors

Abstract: 2N3782
Contextual Info: SOLITRON DEVICES INC i 8368602 hi SOLITRON DEVICES INÇ_. DE~| û3bfitDE DODDTSt. 0 | ~ _6 1 C POWER TRANSISTORS 2N3782 00956 T~ J 7 PNP SILICON POWER TRANSISTORS MEDIUM POWER 3 AMPERES FEATURES . HIGH RELIABILITY, M EDIU M POWER PLANAR CONSTRUCTION

solitron transistors

Abstract: SOLITRON DEVICES
Contextual Info: SOLITRON DEVICES INC “4 / - ' tl v - ,„ • -Ä - - * - 8 3 6 8602 v . " «¿-" ' V1- SOLITRON DEVICES - c »F|fl3böbDa OaOD47t, 7 •• v ; ^ - : ' -• :W i m -1- " - - - - - - -i • -^ 61C 00476 INC. D POWER TRANSISTORS 2N3750 2N3751 2N3752

Solitron

Abstract: Solitron Transistor
Contextual Info: 8368602 SOLITRON .DEVICES INC SOLITRON DEVICES INC _ 95D 02823 D T ~ JJ-/JT "TS DE |fl3bflbOE 0002053 M [D yj tF ©ÄTTÄ[L®( VERY HIGH VOLTAGE, FAST SWITCHING CH IP NUM BER Devices. Inc. N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* CONTACT METALLIZATION

SOLITRON DEVICES

Abstract: 2N3469 solitron transistors SOLITRON 2N2657 rfft 2N265
Contextual Info: SOLITRON DEVICES INC tl 8368602 SOLITRON DEVICES » F | ö B b a L D S D0D04bS 2 INC 6 iC 00465 D POWER TRANSISTORS 2N3469 NPN SILICON POWER TRANSISTORS MEDIUM POWER 5 AMPERES FEATURES GAIN LINEARITY LOW SATURATION VOLTAGE APPLICATIONS M ED IU M POWER, HIGH FREQUENCY

SP5415

Abstract: SP5416 Power Transistors SIT solitron transistors 1389 de
Contextual Info: SOLITRON DEVICES INC bl » e 03Lfib05 □ODlllfi fl a fa . 8 3 6 8 6 0 2 SOLITRON D E VICFS POWER TRANSISTORS SP5415 SP5416 INC 61C 0 1 1 1 8 PNP SILICON POWER TRANSISTORS HIGH VOLTAGE 1 AMPERE FEATURES HIGH VOLTAGE, FAST SWITCHING APPLICATIONS HIGH VOLTAGE INVERTERS,

2N3204

Abstract: 2N3203 SDT3775 2N3202 SDT3776 SDT3777 SOLITRON DEVICES solitron transistors
Contextual Info: SOLITRON DEVICES INC E ' .i tï 8 3 6 8602 SOLITRON DEVICES DE I flHbñbDE OODOTBT O D 61C 0 0 9 3 9 INC POWER TRANSISTORS 2N3202 2N3203 2N3204 r- i's-i'7 PNP SILICON POWER TRANSISTORS MEDIUM POWER 3 AMPERES FEATURES PLANAR CONSTRUCTION LOW SATURATION VOLTAGES

20302

Abstract: EB 203 D 0G013M3
Contextual Info: 8 368602 SOLITRON DEVICES SOLITRON DEVICES INC D 61C 01343 INC t.1 SDM SDM SDM SDM 5 AMP FAST SWITCHING T-33-29 B E § a3tat,G2 0G013M3 4 M~~ miTiNpypsvicES SEMICONDUCTOR GROUP L>] r 20301 20302 20303 20304 N PN DARLBNGTON POWER TRANSISTORS Û % ñ p'.ä &

452M

Contextual Info: 8368602 SOLITRON DEVICES INC 95D ^öäbäbae 02881 ooüeööi D >4 | -Æ iitran ÄTTÄlLOd Devices, Inc. LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum

Contextual Info: 8368602 SOLITRON DEVICES INC TS 95D 02891 d ÊT| 03bflbDS D T~~ S S ~ 7 -ÆMron Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum

solitrondevices

Abstract: SOLITRON 200V transistor npn 5a SDT1641-SDT1668
Contextual Info: 8368602 SOLITRON-DEVICES INC T5 95D 02841 DE |ö3bflbQB DQ0EÖ41 3 Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POW ER TRANSISTOR FORMERLY 16 CHIP NUMBER CONTACT METALLIZATION B ase and emitter: > 30,000 A Aluminum

120v 10a transistor

Abstract: o25m 2N5291 npn 120v 10a transistor
Contextual Info: SOLITRON DEVICES INC fib DE I fiBbfikDa D002S0b 5 | 'f'-jjELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PN P EPITAXIAL PLANAR POWER TRANSISTOR * FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 A Aluminum Collector: Polished Silicon

SOLITRON DEVICES

Contextual Info: at SOLITRON DEVICES INC 7-. DE I û3t.flfaDS DDDSSb'i S ELEMENT NUMBER 144 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 À Aluminum FORMERLY 44 Collector: Polished Silicon

transistor 2n

Abstract: 2N4036 Solitron Transistor
Contextual Info: SOLITRON DEVICES INC 1.0 1.1 SECTION I: ' 3 bl DE|ö3bflbOS DDDIE'H □ I 0 ENGINEERING DEVICE SPECIFICATION TRANSISTOR 2N kOJ>6 , ( 69SP4056 ) SILICON DEVICE DESCRIPTION Construction: This device is a PNP Diffused Planar Power Transistor packaged in a single-ended T0-5 case.

Contextual Info: 'SOLITRON DEVICES INC äh de^ I fl3L.ab02 O D o a s ö T a | _ 7 " ' 3 3 - / 7 ELEMENT NUMBER 268 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PNP EPITAXIAL PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 50.000A Aluminum FORMERLY 68 Collector: Polished Silicon

Contextual Info: SOLITRON DEVICES INC 61C POWER3 TRANSISTORSTR0N D E V Ip E S INC SP45C1 SP45C2 SP45C3 SP45G4 SP45C7 SP45C8 SP45G9 SP45C10 SP45C5 SP45C11 OHIO SP45C6 ~ SP45C12 T - 3 3~/f PNP SILICON POWER TRANSISTORS MEDIUM POWER 4 AMPERES FEATURES PLANAR CONSTRUCTION MEDIUM POWER

12MHZ

Contextual Info: at SOLITRON DEVICES INC dbJ û3&.ûLiGS oooasbE □ or ELEMENT NUMBER 116 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 A Aluminum FORMERLY 16 Collector: Etched Silicon

Contextual Info: ^ 8368602 — - - r— —T l SOLITRON DEV ICES D F |f l3 b ô L 0 E Q00133L, 7 I N C _ • _ olitron Devices, Inc. CASE: Voltage, Emitter to Base V EBQ too 6 0 .

2N5531

Abstract: j3305 2N552 Solitron Devices solitron transistors 2N5527 SOLITRON silicon power transistors TR-33 tr33"05
Contextual Info: — SOLITRON DEVICES INC bb DE | û3bflt,D2 ODDl^D? 2 ~ f 1_ _ 3 ?, ü ^ RADIA TION RESISTANT NPN SILICON POWER TRANSISTORS 2N5527 2N5531 NPN SILICON POWER TRANSISTORS RADIATION RESISTAN T 5 AMPERES FEATURES MEDIUM POWER RADIATION EXPOSURE LEVEL TO 5 x 1014 nvt

Contextual Info: : 8368602 SOLITRON¡ DEVICES INC^Ì DF|fl3fc,fit,05 DDDiatl 2 f - ENGINEERING DEVICE SPECIFICATION T W NO. 6079/2N2698 SILICON TRANSISTOR GENERAL DESCRIPTION This device is an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications

Contextual Info: 8368602 SOLITRON DEVICES _ At 8 6 D 02 55 0 INC »F|ñ3bñbDS 00D2S50 7 - 35 ~ 33 ELEMENT NUMBER 3 MEDIUM VOLTAGE, FAST SWITCHING MONOLITHIC NPN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 ,0 0 0 A Aluminum

2N5495

Abstract: 2N5491
Contextual Info: SOLITRON DE VICES INC bï nftRftfinT ^ R O L I T R O N DEVICES - • INC DE I ñ3bñti0a ODOOS41 „ 4 -" T " 3 0 - U POWER TRANSISTORS 2N5491 2N5493 2N5495 2N5497 "ä . ' ELECTRICAL CHARACTERISTICS T C = 25°C UNLESS OTHERWISE NOTED SYMBOL

TNF-G

Contextual Info: SOLITRON D E V I CE S INC T5D D fl3bfib02 0 0 0 2 0 7 5 1 "T -°V \ “ CA .jPolitron Devices, Inc HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold