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    SOLITRON TRANSISTOR Search Results

    SOLITRON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SOLITRON TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    185AJJ006

    Abstract: solitron devices SOLITRON Solitron Transistor
    Text: SOLITRON DEVICES 561 863 5946 11/21/02 18:18 0 :02/08 N0:092 SOLITRON DEVICES, INC. PRODUCT SPECIFICATION SOLITRON P/N: 183AJJ006 SDT7AQ6 CUSTOMER P/N: REV. ORIGINATOR : GENERAL PURPOSE REFERENCE SPEC: REV: PKG; PARTS DWG: EDS NO: DESIGN LIMITS: REFERENCE DEVICE:


    OCR Scan     		PDF 183AJJ006 185AJJ* 185AJJ006 SDT7A06) I8SAJJ006 185AJJ006 solitron devices SOLITRON Solitron Transistor

    80t71

    Abstract: SOLITRON 18368 a602 SDT712 SDT714 SDT71A solitron devices
    Text: SOLITRON DEVICES INC Ì>E |fl3fc,flb0 a DOOOt.E'i t 8368602 SOLITRON DEVICES INC 61C 00629 POWER TRANSISTORS SDT712 SDT71A T ' i 3 - 1* NPN SILICON POWER TRANSISTORS HIGH VOLTAGE 3 AMPERES FEATURES PLANAR CONSTRUCTION FAST SWITCHING HIGH RELIABILITY APPLICATIONS


    OCR Scan     		PDF SDT712 SDT71A SDT712 SDT714 100mA) 1200v, 1400v, 80t71 SOLITRON 18368 a602 SDT714 SDT71A solitron devices

    solitron transistors

    Abstract: 2N3782
    Text: SOLITRON DEVICES INC i 8368602 hi SOLITRON DEVICES INÇ_. DE~| û3bfitDE DODDTSt. 0 | ~ _6 1 C POWER TRANSISTORS 2N3782 00956 T~ J 7 PNP SILICON POWER TRANSISTORS MEDIUM POWER 3 AMPERES FEATURES . HIGH RELIABILITY, M EDIU M POWER PLANAR CONSTRUCTION


    OCR Scan     		PDF 2N3782 -200m 200mA) SDT69501 SDT69503 solitron transistors 2N3782

    solitron transistors

    Abstract: SOLITRON DEVICES
    Text: SOLITRON DEVICES INC “4 / - ' tl v - ,„ • -Ä - - * - 8 3 6 8602 v . " «¿-" ' V1- SOLITRON DEVICES - c »F|fl3böbDa OaOD47t, 7 •• v ; ^ - : ' -• :W i m -1- " - - - - - - -i • -^ 61C 00476 INC. D POWER TRANSISTORS 2N3750 2N3751 2N3752


    OCR Scan     		PDF OaOD47t, 2N3750 2N3751 2N3752 O-111/1 2N3750 2N3751 solitron transistors SOLITRON DEVICES

    Solitron

    Abstract: Solitron Transistor
    Text: 8368602 SOLITRON .DEVICES INC SOLITRON DEVICES INC _ 95D 02823 D T ~ JJ-/JT "TS DE |fl3bflbOE 0002053 M [D yj tF ©ÄTTÄ[L®( VERY HIGH VOLTAGE, FAST SWITCHING CH IP NUM BER Devices. Inc. N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* CONTACT METALLIZATION


    OCR Scan     		PDF SDT55456, SDT55472, STD55960, SDT55560 Solitron Solitron Transistor

    SOLITRON DEVICES

    Abstract: 2N3469 solitron transistors SOLITRON 2N2657 rfft 2N265
    Text: SOLITRON DEVICES INC tl 8368602 SOLITRON DEVICES » F | ö B b a L D S D0D04bS 2 INC 6 iC 00465 D POWER TRANSISTORS 2N3469 NPN SILICON POWER TRANSISTORS MEDIUM POWER 5 AMPERES FEATURES GAIN LINEARITY LOW SATURATION VOLTAGE APPLICATIONS M ED IU M POWER, HIGH FREQUENCY


    OCR Scan     		PDF 2N3469 500mA, 200mA, 10MHz) 100mA, 2N2657, 2N265I 330/tsec; SOLITRON DEVICES 2N3469 solitron transistors SOLITRON 2N2657 rfft 2N265

    SP5415

    Abstract: SP5416 Power Transistors SIT solitron transistors 1389 de
    Text: SOLITRON DEVICES INC bl » e 03Lfib05 □ODlllfi fl a fa . 8 3 6 8 6 0 2 SOLITRON D E VICFS POWER TRANSISTORS SP5415 SP5416 INC 61C 0 1 1 1 8 PNP SILICON POWER TRANSISTORS HIGH VOLTAGE 1 AMPERE FEATURES HIGH VOLTAGE, FAST SWITCHING APPLICATIONS HIGH VOLTAGE INVERTERS,


    OCR Scan     		PDF 03Lfib05 SP5415 SP5416 SP5415 --10V, SP5416 Power Transistors SIT solitron transistors 1389 de

    2N3204

    Abstract: 2N3203 SDT3775 2N3202 SDT3776 SDT3777 SOLITRON DEVICES solitron transistors
    Text: SOLITRON DEVICES INC E ' .i tï 8 3 6 8602 SOLITRON DEVICES DE I flHbñbDE OODOTBT O D 61C 0 0 9 3 9 INC POWER TRANSISTORS 2N3202 2N3203 2N3204 r- i's-i'7 PNP SILICON POWER TRANSISTORS MEDIUM POWER 3 AMPERES FEATURES PLANAR CONSTRUCTION LOW SATURATION VOLTAGES


    OCR Scan     		PDF 2N3202 2N3203 2N3204 -50mA) SDT3775 SDT3776 SDT3777 SOLITRON DEVICES solitron transistors

    20302

    Abstract: EB 203 D 0G013M3
    Text: 8 368602 SOLITRON DEVICES SOLITRON DEVICES INC D 61C 01343 INC t.1 SDM SDM SDM SDM 5 AMP FAST SWITCHING T-33-29 B E § a3tat,G2 0G013M3 4 M~~ miTiNpypsvicES SEMICONDUCTOR GROUP L>] r 20301 20302 20303 20304 N PN DARLBNGTON POWER TRANSISTORS Û % ñ p'.ä &


    OCR Scan     		PDF T-33-29 0G013M3 20VIB1 DD0134S 20302 EB 203 D

    452M

    Abstract: No abstract text available
    Text: 8368602 SOLITRON DEVICES INC 95D ^öäbäbae 02881 ooüeööi D >4 | -Æ iitran ÄTTÄlLOd Devices, Inc. LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum


    OCR Scan     		PDF 203mm) Base573, SDT05673 200mA, 452M

    Untitled

    Abstract: No abstract text available
    Text: 8368602 SOLITRON DEVICES INC TS 95D 02891 d ÊT| 03bflbDS D T~~ S S ~ 7 -ÆMron Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum


    OCR Scan     		PDF 03bflbDS 305mm) 2N6061, 2N6377, SDT3601 SDT3604, SDT3901 SDT3904, 2N5678, 2N6382

    solitrondevices

    Abstract: SOLITRON 200V transistor npn 5a SDT1641-SDT1668
    Text: 8368602 SOLITRON-DEVICES INC T5 95D 02841 DE |ö3bflbQB DQ0EÖ41 3 Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POW ER TRANSISTOR FORMERLY 16 CHIP NUMBER CONTACT METALLIZATION B ase and emitter: > 30,000 A Aluminum


    OCR Scan     		PDF 203mm) 12MHz 150pF 150pF SDT1641-SDT1668, SDT4901-SDT4905 K10IP solitrondevices SOLITRON 200V transistor npn 5a SDT1641-SDT1668

    120v 10a transistor

    Abstract: o25m 2N5291 npn 120v 10a transistor
    Text: SOLITRON DEVICES INC fib DE I fiBbfikDa D002S0b 5 | 'f'-jjELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PN P EPITAXIAL PLANAR POWER TRANSISTOR * FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 A Aluminum Collector: Polished Silicon


    OCR Scan     		PDF D002S0b 203mm) 25MHz 25MHz 350pF 120v 10a transistor o25m 2N5291 npn 120v 10a transistor

    SOLITRON DEVICES

    Abstract: No abstract text available
    Text: at SOLITRON DEVICES INC 7-. DE I û3t.flfaDS DDDSSb'i S ELEMENT NUMBER 144 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 À Aluminum FORMERLY 44 Collector: Polished Silicon


    OCR Scan     		PDF 45mmx6 25mmx3 203mm) 40MHz 40MHz 300pF SOLITRON DEVICES

    transistor 2n

    Abstract: 2N4036 Solitron Transistor
    Text: SOLITRON DEVICES INC 1.0 1.1 SECTION I: ' 3 bl DE|ö3bflbOS DDDIE'H □ I 0 ENGINEERING DEVICE SPECIFICATION TRANSISTOR 2N kOJ>6 , ( 69SP4056 ) SILICON DEVICE DESCRIPTION Construction: This device is a PNP Diffused Planar Power Transistor packaged in a single-ended T0-5 case.


    OCR Scan     		PDF 69SP4056 f69SP4036) -150mA 7-16-69DRWN. transistor 2n 2N4036 Solitron Transistor

    Untitled

    Abstract: No abstract text available
    Text: 'SOLITRON DEVICES INC äh de^ I fl3L.ab02 O D o a s ö T a | _ 7 " ' 3 3 - / 7 ELEMENT NUMBER 268 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PNP EPITAXIAL PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 50.000A Aluminum FORMERLY 68 Collector: Polished Silicon


    OCR Scan     		PDF 36nim 20MHz 20MHz 900pF

    Untitled

    Abstract: No abstract text available
    Text: SOLITRON DEVICES INC 61C POWER3 TRANSISTORSTR0N D E V Ip E S INC SP45C1 SP45C2 SP45C3 SP45G4 SP45C7 SP45C8 SP45G9 SP45C10 SP45C5 SP45C11 OHIO SP45C6 ~ SP45C12 T - 3 3~/f PNP SILICON POWER TRANSISTORS MEDIUM POWER 4 AMPERES FEATURES PLANAR CONSTRUCTION MEDIUM POWER


    OCR Scan     		PDF SP45C1 SP45C2 SP45C3 SP45G4 SP45C7 SP45C8 SP45G9 SP45C10 SP45C5 SP45C11

    12MHZ

    Abstract: No abstract text available
    Text: at SOLITRON DEVICES INC dbJ û3&.ûLiGS oooasbE □ or ELEMENT NUMBER 116 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 A Aluminum FORMERLY 16 Collector: Etched Silicon


    OCR Scan     		PDF 203mm) 12MHz 12MHz 150pF

    Untitled

    Abstract: No abstract text available
    Text: ^ 8368602 — - - r— —T l SOLITRON DEV ICES D F |f l3 b ô L 0 E Q00133L, 7 I N C _ • _ olitron Devices, Inc. CASE: Voltage, Emitter to Base V EBQ too 6 0 .


    OCR Scan     		PDF Q00133L,

    2N5531

    Abstract: j3305 2N552 Solitron Devices solitron transistors 2N5527 SOLITRON silicon power transistors TR-33 tr33"05
    Text: — SOLITRON DEVICES INC bb DE | û3bflt,D2 ODDl^D? 2 ~ f 1_ _ 3 ?, ü ^ RADIA TION RESISTANT NPN SILICON POWER TRANSISTORS 2N5527 2N5531 NPN SILICON POWER TRANSISTORS RADIATION RESISTAN T 5 AMPERES FEATURES MEDIUM POWER RADIATION EXPOSURE LEVEL TO 5 x 1014 nvt


    OCR Scan     		PDF 2N5527 2N5531 2N5527 2N552? 2N5531 j3305 2N552 Solitron Devices solitron transistors SOLITRON silicon power transistors TR-33 tr33"05

    Untitled

    Abstract: No abstract text available
    Text: : 8368602 SOLITRON¡ DEVICES INC^Ì DF|fl3fc,fit,05 DDDiatl 2 f - ENGINEERING DEVICE SPECIFICATION T W NO. 6079/2N2698 SILICON TRANSISTOR GENERAL DESCRIPTION This device is an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications


    OCR Scan     		PDF bfltl02 0DD12ti 6079/2N2698 12/26/6DRWN. 6079/2N269B f-23-63-K-44 12/26/62DRWN.

    Untitled

    Abstract: No abstract text available
    Text: 8368602 SOLITRON DEVICES _ At 8 6 D 02 55 0 INC »F|ñ3bñbDS 00D2S50 7 - 35 ~ 33 ELEMENT NUMBER 3 MEDIUM VOLTAGE, FAST SWITCHING MONOLITHIC NPN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 ,0 0 0 A Aluminum


    OCR Scan     		PDF 00D2S50 203mm) 40MHz 40MHz SDM3303; SDM3103

    2N5495

    Abstract: 2N5491
    Text: SOLITRON DE VICES INC bï nftRftfinT ^ R O L I T R O N DEVICES - • INC DE I ñ3bñti0a ODOOS41 „ 4 -" T " 3 0 - U POWER TRANSISTORS 2N5491 2N5493 2N5495 2N5497 "ä . ' ELECTRICAL CHARACTERISTICS T C = 25°C UNLESS OTHERWISE NOTED SYMBOL


    OCR Scan     		PDF ODOOS41 2N5491 2N5493 2N5495 2N5497 100mA) 2N5491, 2N5497

    TNF-G

    Abstract: No abstract text available
    Text: SOLITRON D E V I CE S INC T5D D fl3bfib02 0 0 0 2 0 7 5 1 "T -°V \ “ CA .jPolitron Devices, Inc HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold


    OCR Scan     		PDF fl3bfib02 15nun) 051mm) JAN2N5415, JAN2N5416 flb02 02fl7t, TNF-G