SOLID STATE RF HIGH-POWER SWITCH Search Results

Contextual Info: Solid State Pulsed Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-15 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state pulsed power amplifier that operates • Pulsed RF and Pulsed DC Operation

Contextual Info: Solid State Power Amplifier High Power, Broadband, C Band Solid State RF Amplifier Aethercomm P/N SSPA 5.0-6.2-20 is a high power C • Operation from 5.0 to 6.2 GHz Minimum band solid state power amplifier that operates from 5.0 to • 20 Watts Minimum Output Power @ 65 C

solid state amplifier

Abstract: operation of class c amplifier
Contextual Info: Solid State Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-10 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state power amplifier that operates from • 15 Watts Typical Output Power Across Band @ 25 C

Contextual Info: Solid State Power Amplifier High Power, Broadband, S Band Solid State RF Amplifier • Aethercomm P/N SSPA 2.7-3.2-30 is a high power S 30 Watts Minimum Linear Power @ 85 C Base Plate band solid state power amplifier that operates from 2.7 to 3.2 GHz. It offers a minimum of 30 watts of

Contextual Info: Solid State Power Amplifier High Power, X Band Solid State RF Amplifier Aethercomm P/N SSPA 9.0-9.5-30 is a high power X • 30 Watts Minimum Linear Power band solid state power amplifier that operates from • Operation from 9.0 to 9.5 GHz Minimum 9.0 to 9.5 GHz. It offers a minimum of 30 watts of lin-

AETHERCOMM

Abstract: Acros
Contextual Info: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 7.1-7.3-10 is a High Power X • 5 watts linear or pulsed RF power min Band SSPA used in the DSCC Exciter-Transmitter • Operation from 7.1 to 7.3 GHz Subsystem. It is used as a TWT driver amplifier. It

1P2T SWITCH

Abstract: 1P2T HIGH-POWER SWITCH Robinson Laboratories 1p2t solid state RF HIGH-POWER SWITCH 2016-K223
Contextual Info: NEW PRODUCT RELEASE 1P2T HIGH-POWER SWITCH Robinson Laboratories, Inc. Model 2016-K223, Solid State 1P2T Switch, operates over the Frequency Range of 6.0 to 18 GHz. The absorptive, hermetic design has RF power handling capability of 100 WCW Pass only . Insertion

MI407

Contextual Info: bSMSÔSS DD17741 b TE • ANTENNA SWITCH M I407 PIN DIODE RF POWER SWITCHING DESCRIPTION Dimension: mm OUTLINE DRAWING The MI407 PIN diode is employing a high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.

weinschel 34

Contextual Info: Model 4206 & 4208 High Power Solid-State Programmable Attenuators 10 MHz to 2.5 GHz *2 Watts High IP3 INSERTION LOSS, Maximum dB : Frequency Range (GHz) 0.01 - 1.0 1.0 - 2.0 2.0 - 2.5 Ideal for use in Wireless/Cellular, RF imulation/Emulation, & Communication Test Applications.

MI301

Contextual Info: bSMTôET DD1 7 7 3 2 LTT • ANTENNA SWITCH M I303 PIN DIODE RF POWER SWITCHING DESCRIPTION Dimension: mm OUTLINE DRAWING The MI303 PIN diode is employing high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.

MI402

Contextual Info: • bSWöSl ANTENNA SWITCH 0017?3fl QDfi — MI402 PIN DIODE RF POWER SWITCHING DESCRIPTION FEATURES • * Dim ension: mm OUTLINE DRAWING The MI402 PIN diode is employing a high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.

MI308

Contextual Info: , bEli tîflEtl DD17735 ANTENNA SWITCH 3TT • Ml308 PIN DIODE RF POWER SWITCHING DESCRIPTION OUTLINE DRAWING The M I3 0 8 PIN diode is employing a high reliability glass Dim ension: mm construction, designed for solid state antenna switchs in commercial tw o-w ay radios.

Contextual Info: GENERAL SPECIFICATIONS/DEFINITIONS In applications where it is necessary to protect a highly sensitive microwave component such as a low noise receiver front-end amplifier from damaging levels of RF power, MITEQ’s higher power solid-state microwave switches may better serve when the time characteristics of the high power signal are known and the control circuitry

Contextual Info: • t24*ìù2*ì o a m -d i dts ■ a n te n n a s w itc h MI301 PIN DIODE RF POWER SWITCHING DESCRIPTION OUTLINE DRAWING The MI301 PIN diode is employing high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.

Solid State Switches

Abstract: pin diode switch up to 10 GHz N1810TL Solid State Microwave PIN Diode Switch for frequencies up to 10 GHz microwave fet IC
Contextual Info: Agilent Solid State Switches Application Note Selecting the right switch technology for your application Abstract Selecting the right switch technology in terms of RF performance, reliability, switching time, power handling, etc. to accessorize and/or complement your

DGMJ00004

Contextual Info: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.8 dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O

Contextual Info: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features • · · · · · · · High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O

1031W

Abstract: Honeywell DBM Honeywell Systems
Contextual Info: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.8 dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O

GMJ00004

Abstract: HRF-SW1030 HRF-SW1031 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR
Contextual Info: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O

1031W

Abstract: ECU-E1C103KBQ 4x4 ecu GMJ00004 HRF-SW1030 HRF-SW1031 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR
Contextual Info: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.8 dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O

Contextual Info: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O

GMJ00004

Abstract: HRF-SW1030 HRF-SW1030-B HRF-SW1030-E HRF-SW1030-TR LPCC 4x4 24
Contextual Info: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O

LPCC 4x4 24

Abstract: 1031W HONEYWELL DBM GMJ00004 HRF-SW1030 HRF-SW1031 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR
Contextual Info: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features • · · · · · · · High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O

Contextual Info: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O