Untitled
Abstract: No abstract text available
Text: Solid State Pulsed Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-15 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state pulsed power amplifier that operates • Pulsed RF and Pulsed DC Operation
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Untitled
Abstract: No abstract text available
Text: Solid State Power Amplifier High Power, Broadband, C Band Solid State RF Amplifier Aethercomm P/N SSPA 5.0-6.2-20 is a high power C • Operation from 5.0 to 6.2 GHz Minimum band solid state power amplifier that operates from 5.0 to • 20 Watts Minimum Output Power @ 65 C
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solid state amplifier
Abstract: operation of class c amplifier
Text: Solid State Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-10 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state power amplifier that operates from • 15 Watts Typical Output Power Across Band @ 25 C
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Untitled
Abstract: No abstract text available
Text: Solid State Power Amplifier High Power, Broadband, S Band Solid State RF Amplifier • Aethercomm P/N SSPA 2.7-3.2-30 is a high power S 30 Watts Minimum Linear Power @ 85 C Base Plate band solid state power amplifier that operates from 2.7 to 3.2 GHz. It offers a minimum of 30 watts of
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Untitled
Abstract: No abstract text available
Text: Solid State Power Amplifier High Power, X Band Solid State RF Amplifier Aethercomm P/N SSPA 9.0-9.5-30 is a high power X • 30 Watts Minimum Linear Power band solid state power amplifier that operates from • Operation from 9.0 to 9.5 GHz Minimum 9.0 to 9.5 GHz. It offers a minimum of 30 watts of lin-
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AETHERCOMM
Abstract: Acros
Text: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 7.1-7.3-10 is a High Power X • 5 watts linear or pulsed RF power min Band SSPA used in the DSCC Exciter-Transmitter • Operation from 7.1 to 7.3 GHz Subsystem. It is used as a TWT driver amplifier. It
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1P2T SWITCH
Abstract: 1P2T HIGH-POWER SWITCH Robinson Laboratories 1p2t solid state RF HIGH-POWER SWITCH 2016-K223
Text: NEW PRODUCT RELEASE 1P2T HIGH-POWER SWITCH Robinson Laboratories, Inc. Model 2016-K223, Solid State 1P2T Switch, operates over the Frequency Range of 6.0 to 18 GHz. The absorptive, hermetic design has RF power handling capability of 100 WCW Pass only . Insertion
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2016-K223,
1P2T SWITCH
1P2T HIGH-POWER SWITCH
Robinson Laboratories
1p2t
solid state RF HIGH-POWER SWITCH
2016-K223
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weinschel 34
Abstract: No abstract text available
Text: Model 4206 & 4208 High Power Solid-State Programmable Attenuators 10 MHz to 2.5 GHz *2 Watts High IP3 INSERTION LOSS, Maximum dB : Frequency Range (GHz) 0.01 - 1.0 1.0 - 2.0 2.0 - 2.5 Ideal for use in Wireless/Cellular, RF imulation/Emulation, & Communication Test Applications.
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4206-X
4208-X
weinschel 34
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Untitled
Abstract: No abstract text available
Text: GENERAL SPECIFICATIONS/DEFINITIONS In applications where it is necessary to protect a highly sensitive microwave component such as a low noise receiver front-end amplifier from damaging levels of RF power, MITEQ’s higher power solid-state microwave switches may better serve when the time characteristics of the high power signal are known and the control circuitry
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rf mosfet power amplifier
Abstract: No abstract text available
Text: MODEL 75AP250 75 WATTS CW 5 - 250 MHz 160 School House Road, Souderton, PA 18964-9990 USA Phone 215-723-8181•FAX 215-723-5688 The Model 75AP250 is a self-contained, air cooled, broadband, solid state amplifier designed for applications where pulsed, high power, RF outputs are required. For NMR applications, the amplifier
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75AP250
75AP250
75AP250,
rf mosfet power amplifier
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Solid State Switches
Abstract: pin diode switch up to 10 GHz N1810TL Solid State Microwave PIN Diode Switch for frequencies up to 10 GHz microwave fet IC
Text: Agilent Solid State Switches Application Note Selecting the right switch technology for your application Abstract Selecting the right switch technology in terms of RF performance, reliability, switching time, power handling, etc. to accessorize and/or complement your
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the848
5989-5189EN
Solid State Switches
pin diode switch up to 10 GHz
N1810TL
Solid State Microwave
PIN Diode Switch for frequencies up to 10 GHz
microwave fet IC
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DGMJ00004
Abstract: No abstract text available
Text: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.8 dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1030
HRF-SW1030
HRF-SW1030-TR
HRF-SW1030-E
DGMJ00004
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Untitled
Abstract: No abstract text available
Text: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features • · · · · · · · High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1030
HRF-SW1030
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1031W
Abstract: Honeywell DBM Honeywell Systems
Text: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.8 dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1031
HRF-SW1031
perforHRF-SW1031-E
1031W
Honeywell DBM
Honeywell Systems
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1031W
Abstract: ECU-E1C103KBQ 4x4 ecu GMJ00004 HRF-SW1030 HRF-SW1031 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR
Text: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.8 dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1031
HRF-SW1031
1031W
ECU-E1C103KBQ
4x4 ecu
GMJ00004
HRF-SW1030
HRF-SW1031-B
HRF-SW1031-E
HRF-SW1031-TR
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Untitled
Abstract: No abstract text available
Text: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1031
HRF-SW1031
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GMJ00004
Abstract: HRF-SW1030 HRF-SW1030-B HRF-SW1030-E HRF-SW1030-TR LPCC 4x4 24
Text: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1030
HRF-SW1030
GMJ00004
HRF-SW1030-B
HRF-SW1030-E
HRF-SW1030-TR
LPCC 4x4 24
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LPCC 4x4 24
Abstract: 1031W HONEYWELL DBM GMJ00004 HRF-SW1030 HRF-SW1031 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR
Text: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features • · · · · · · · High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1031
HRF-SW1031
LPCC 4x4 24
1031W
HONEYWELL DBM
GMJ00004
HRF-SW1030
HRF-SW1031-B
HRF-SW1031-E
HRF-SW1031-TR
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Untitled
Abstract: No abstract text available
Text: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1030
HRF-SW1030
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MI407
Abstract: No abstract text available
Text: bSMSÔSS DD17741 b TE • ANTENNA SWITCH M I407 PIN DIODE RF POWER SWITCHING DESCRIPTION Dimension: mm OUTLINE DRAWING The MI407 PIN diode is employing a high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.
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DD17741
MI407
-80dBc,
-73dBc
90dBii)
680MHz
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MI301
Abstract: No abstract text available
Text: bSMTôET DD1 7 7 3 2 LTT • ANTENNA SWITCH M I303 PIN DIODE RF POWER SWITCHING DESCRIPTION Dimension: mm OUTLINE DRAWING The MI303 PIN diode is employing high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.
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MI303
MI301
MI303
230nH
MI301
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MI402
Abstract: No abstract text available
Text: • bSWöSl ANTENNA SWITCH 0017?3fl QDfi — MI402 PIN DIODE RF POWER SWITCHING DESCRIPTION FEATURES • * Dim ension: mm OUTLINE DRAWING The MI402 PIN diode is employing a high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.
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MI402
MI402
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MI308
Abstract: No abstract text available
Text: , bEli tîflEtl DD17735 ANTENNA SWITCH 3TT • Ml308 PIN DIODE RF POWER SWITCHING DESCRIPTION OUTLINE DRAWING The M I3 0 8 PIN diode is employing a high reliability glass Dim ension: mm construction, designed for solid state antenna switchs in commercial tw o-w ay radios.
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DD17735
Ml308
90dB/i)
MI308
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Untitled
Abstract: No abstract text available
Text: • t24*ìù2*ì o a m -d i dts ■ a n te n n a s w itc h MI301 PIN DIODE RF POWER SWITCHING DESCRIPTION OUTLINE DRAWING The MI301 PIN diode is employing high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.
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MI301
MI301
230nH
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