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    SOI SWITCHES 2003 Search Results

    SOI SWITCHES 2003 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    CO-188RASMAX2-003 Amphenol Cables on Demand Amphenol CO-188RASMAX2-003 SMA Right Angle Male to SMA Right Angle Male (RG188) 50 Ohm Coaxial Cable Assembly (High-Temp Teflon RG188A/U) 3ft Datasheet
    CO-058RABNCX2-003 Amphenol Cables on Demand Amphenol CO-058RABNCX2-003 BNC Right Angle Male to BNC Right Angle Male (RG58) 50 Ohm Coaxial Cable Assembly 3ft Datasheet

    SOI SWITCHES 2003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EM4222

    Abstract: soi switches 2003 Linear SOI switch body RF 2003 tinella RF low power hearing aids car Speed Sensor using RFID UHF RFID passive tag CMOS microwave distance sensors silicon on insulator FDSOI TECHNOLOGY
    Text: OCTOBER 2003 RFDESIGN RF AND MICROWAVE TECHNOLOGY FOR DESIGN ENGINEERS Why all the buzz about SOI? Silicon-on-insulator technology offers solutions to the higher-performance and lower-power dilemma Digital Systems: New two-antenna handset technology improves CDMA


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    Choosing the Right RF Switches for Smart Mobile Device Applications

    Abstract: No abstract text available
    Text: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than


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    E3081

    Abstract: HT2080 CINOX OSCILLATOR CMOS technology length 0.4um 12GE 88Au HT1104HZ HT2160 IC CD4066 quad bilateral switch HTMOS
    Text: High Temperature Electronics for Sensor Interface and Data Acquisition Sensors Expo, October 7, 1998 Jay Goetz – Applications Engineer Honeywell SSEC 12001 St Hwy 55 Plymouth MN 55441 612 954-2520 jay.goetz@corp.honeywell.com Introduction High Temperature designs need components rated to operate in the harsh environment in which they will be


    Original     		PDF Report-1997, E3081 HT2080 CINOX OSCILLATOR CMOS technology length 0.4um 12GE 88Au HT1104HZ HT2160 IC CD4066 quad bilateral switch HTMOS

    PE42480

    Abstract: No abstract text available
    Text: 2014-2015 High-Performance Analog Product Catalog Welcome to Peregrine Semiconductor Peregrine Semiconductor NASDAQ: PSMI , founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding


    Original     		PDF DOC-35227-4 PE42480

    body contact FET soi RF switch

    Abstract: be68 Inselek SOI switch "body contact" RF FET solar panels in satellites tol72 mini circulator rg213 CABLE COAX soi switches 2003 body contact soi FET
    Text: S pecial R eport UltraCMOS RFICs Ease the Complexity of Satellite Designs C ommercial and military satellites require cost-effective ICs that meet stringent high-reliability standards. In addition, they need to provide distinct advantages that allow designers to advance satellite


    Original     		PDF 1970s 1980s, body contact FET soi RF switch be68 Inselek SOI switch "body contact" RF FET solar panels in satellites tol72 mini circulator rg213 CABLE COAX soi switches 2003 body contact soi FET

    Inselek

    Abstract: Boeing NOW JERSEY SEMICONDUCTOR PHYSICS Mueller Electric Company soi switches 2003 soi switches cmos transistor 1972
    Text: W hat is Silicon-on-Sapphire? Silicon-on-Sapphire SOS is one of the siliconon-insulator (SOI) semiconductor manufacturing technologies. In fact, SOS is the first of the SOI technologies. SOS is formed by depositing a thin layer of silicon onto a sapphire wafer at high temperature.


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    digital dts dolby 5.1 ic amplifier circuits

    Abstract: 5.1 home theatre circuit diagram digital dts dolby 5.1 ic 5.1 home theatre basic diagram 2.1 to 5.1 home theatre circuit diagram 5.1 surround sound dolby circuits BEST BASS TREBLE for home theater 5.1 home theatre audio system diagram for making 5.1 home theatre schematic diagram 5.1 channel surround sound IC
    Text: PRELIMINARY DATA SHEET MICRONAS MAS 35xyH Audio Decoder IC Family SURROUND P R O L O G I C II SPATIALIZER N-2-2 ULTRATM D I G I T A L Edition Dec. 4, 2003 6251-589-1PD MICRONAS MAS 35xyH PRELIMINARY DATA SHEET Contents Page Section Title 5 5 6 7 1. 1.1. 1.2.


    Original     		PDF 35xyH 6251-589-1PD 6251-598-2PD digital dts dolby 5.1 ic amplifier circuits 5.1 home theatre circuit diagram digital dts dolby 5.1 ic 5.1 home theatre basic diagram 2.1 to 5.1 home theatre circuit diagram 5.1 surround sound dolby circuits BEST BASS TREBLE for home theater 5.1 home theatre audio system diagram for making 5.1 home theatre schematic diagram 5.1 channel surround sound IC

    digital dts dolby 5.1 ic amplifier circuits

    Abstract: 5.1 home theatre basic diagram 7.1 channel assembled home theater circuit diagram 5.1 home theatre audio system diagram for making 5.1 home theatre schematic diagram MSP44x0G dolby digital dts decoder prologic II 5.1 circuit diagram 5.1 home theatre circuit diagram dolby digital 5.1 surround sound dolby pcb
    Text: PRELIMINARY DATA SHEET MICRONAS MAS 35xyH Audio Decoder IC Family SURROUND P R O L O G I C II SPATIALIZER N-2-2 ULTRATM D I G I T A L Edition Dec. 4, 2003 6251-589-2PD MICRONAS MAS 35xyH PRELIMINARY DATA SHEET Contents Page Section Title 5 5 6 7 1. 1.1. 1.2.


    Original     		PDF 35xyH 6251-589-2PD 6251-598-2PD digital dts dolby 5.1 ic amplifier circuits 5.1 home theatre basic diagram 7.1 channel assembled home theater circuit diagram 5.1 home theatre audio system diagram for making 5.1 home theatre schematic diagram MSP44x0G dolby digital dts decoder prologic II 5.1 circuit diagram 5.1 home theatre circuit diagram dolby digital 5.1 surround sound dolby pcb

    gps exact um

    Abstract: navstar jammer circuit diagram mobile jammer circuit gps cellular "vehicle tracking" 1995 car signal jammer GPS chip integrat phased array antenna MICROWAVE DEVICES
    Text: DefenseElectronics Highly Integrated GPS Receiver Overcomes Jamming, Pinpoints Location From RF CMOS silicon-on-sapphire SOS technology, a monolithic low-power, radiation hardened GPS front-end — designed to overcome jamming has been developed for military/aerospace applications.


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    TAG 302-600

    Abstract: PE42924
    Text: Changing RF Design. Forever. TM 2013 Commercial Products Product Selection Guide First Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor NASDAQ: PSMI is a fabless provider of high-performance radio-frequency (RF)


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    HRF-SW1001

    Abstract: GMJ00004 HRF-SW1001-B HRF-SW1001-E HRF-SW1001-TR soi switches 2003 ECUE1C103KBQ
    Text: HRF-SW1001 SPDT Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.1dB @ 2 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O Single Positive Supply Voltage


    Original     		PDF HRF-SW1001 HRF-SW1001 GMJ00004 HRF-SW1001-B HRF-SW1001-E HRF-SW1001-TR soi switches 2003 ECUE1C103KBQ

    HRF-SW1022

    Abstract: HRF-SW1022-B HRF-SW1022-E HRF-SW1022-TR
    Text: HRF-SW1022 Advance Information SP4T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 3 GHz Insertion Loss Of 2.0dB @ 2 GHz DC To 6 GHz Operating Frequency Integrated CMOS Control Logic, with all OFF mode Integrated ESD Protection on Digital I/O


    Original     		PDF HRF-SW1022 HRF-SW1022 HRF-SW1022-E HRF-SW1022-B HRF-SW1022-E HRF-SW1022-TR

    Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM

    Abstract: TPC2A Alcatel-Lucent
    Text: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes


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    HRF-SW1000

    Abstract: HRF-SW1000-E GMJ00004 HRF-SW1000-B HRF-SW1000-TR
    Text: HRF-SW1000 SPDT Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.1dB @ 2 GHz DC To 4GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O Single Positive Supply Voltage


    Original     		PDF HRF-SW1000 HRF-SW1000 HRF-SW1000-E GMJ00004 HRF-SW1000-B HRF-SW1000-TR

    4x4 ecu

    Abstract: LPCC 4x4 24 rf attenuator 0.5-1.5 ghz conventional cmos GMJ00004 HRF-SW1030 HRF-SW1030-B HRF-SW1030-E HRF-SW1030-TR Attenuator chip
    Text: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.8 dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O


    Original     		PDF HRF-SW1030 HRF-SW1030 4x4 ecu LPCC 4x4 24 rf attenuator 0.5-1.5 ghz conventional cmos GMJ00004 HRF-SW1030-B HRF-SW1030-E HRF-SW1030-TR Attenuator chip

    GMJ00004

    Abstract: HRF-SW1021 HRF-SW1021-B HRF-SW1021-E HRF-SW1021-TR soi switches 2003 ECUE1C103KBQ ECU-E1C103KBQ
    Text: HRF-SW1021 Preliminary SP4T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.35dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O


    Original     		PDF HRF-SW1021 HRF-SW1021 GMJ00004 HRF-SW1021-B HRF-SW1021-E HRF-SW1021-TR soi switches 2003 ECUE1C103KBQ ECU-E1C103KBQ

    1031W

    Abstract: ECU-E1C103KBQ 4x4 ecu GMJ00004 HRF-SW1030 HRF-SW1031 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR
    Text: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.8 dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O


    Original     		PDF HRF-SW1031 HRF-SW1031 1031W ECU-E1C103KBQ 4x4 ecu GMJ00004 HRF-SW1030 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR

    Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

    Abstract: 180NM IBM
    Text: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE


    Original     		PDF 11b/g Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN 180NM IBM

    PE4246

    Abstract: No abstract text available
    Text: Product Specification PE4246 Absorptive SPST UltraCMOS RF Switch: DC - 5000 MHz Product Description The PE4246 RF Switch is designed to cover a broad range of applications from DC to 5000 MHz. It is non-reflective at both RF1 and RF2 ports. This SPST switch integrates a single-pin


    Original     		PDF PE4246 PE4246

    dfn 3x3 footprint

    Abstract: dfn footprint
    Text: Product Specification PE4246 Absorptive SPST UltraCMOS RF Switch: 1 - 5000 MHz Product Description The PE4246 RF Switch is designed to cover a broad range of applications from 1 to 5000 MHz. It is non-reflective at both RF1 and RF2 ports. This SPST switch integrates a single-pin


    Original     		PDF PE4246 PE4246 dfn 3x3 footprint dfn footprint

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4246 Absorptive SPST UltraCMOS RF Switch: 1 - 5000 MHz Product Description The PE4246 RF Switch is designed to cover a broad range of applications from 1 to 5000 MHz. It is non-reflective at both RF1 and RF2 ports. This SPST switch integrates a single-pin


    Original     		PDF PE4246 PE4246

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4246 Absorptive SPST UltraCMOS RF Switch: DC - 5000 MHz Product Description The PE4246 RF Switch is designed to cover a broad range of applications from DC to 5000 MHz. It is non-reflective at both RF1 and RF2 ports. This SPST switch integrates a single-pin


    Original     		PDF PE4246 PE4246

    RF Switches

    Abstract: PE4246
    Text: Product Specification PE4246 Absorptive SPST UltraCMOS RF Switch: 1 - 5000 MHz Product Description The PE4246 RF Switch is designed to cover a broad range of applications from 1 to 5000 MHz. It is non-reflective at both RF1 and RF2 ports. This SPST switch integrates a single-pin


    Original     		PDF PE4246 PE4246 RF Switches

    dfn 3x3 footprint

    Abstract: dfn footprint
    Text: Product Specification PE4246 Absorptive SPST UltraCMOS RF Switch: DC - 5000 MHz Product Description The PE4246 RF Switch is designed to cover a broad range of applications from DC to 5000 MHz. It is non-reflective at both RF1 and RF2 ports. This SPST switch integrates a single-pin


    Original     		PDF PE4246 PE4246 dfn 3x3 footprint dfn footprint