SOI SWITCH Search Results

CXA4403GC

Contextual Info: SPDT SOI Antenna Switch CXA4403GC Description The CXA4403GC is a SPDT antenna switch for 3G/LTE switching applications. The CXA4403GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss. Features

Contextual Info: SPDT SOI Antenna Switch CXA4403GC Description The CXA4403GC is a SPDT antenna switch for 3G/LTE switching applications. The CXA4403GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss. Features

Contextual Info: SP3T SOI Antenna Switch for Diversity CXA2973GC Description CXA2973GC is a low power SP3T antenna switch for diversity switching applications. CXA2973GC has a 1.8V CMOS compatible decoder. The SONY Silicon On Insulator SOI technology is used for low insertion loss.

Contextual Info: SPDT High Power SOI Antenna Switch CXA4011GC Description The CXA4011GC is a SPDT antenna switch for GSM/3G/LTE switching applications. The CXA4011GC has a 1.8V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.

Contextual Info: Dual-SP3T SP3Tx2 SOI Antenna Switch CXA2947GC Description The CXA2947 is Rx power SP3Tx2 antenna switch for balanced signal switching application. The CXA2947 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.

RF3A

Contextual Info: Dual-SP4T SP4Tx2 SOI Antenna Switch CXA4410GC Description The CXA4410 is Rx power SP4Tx2 antenna switch for balanced signal switching application. The CXA4410 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.

CXA4

Contextual Info: Dual-SP4T SP4Tx2 SOI Antenna Switch CXA4410GC Description The CXA4410 is Rx power SP4Tx2 antenna switch for balanced signal switching application. The CXA4410 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.

Contextual Info: SPDT High Power SOI Antenna Switch CXA4011GC Description The CXA4011GC is a SPDT antenna switch for GSM/3G/LTE switching applications. The CXA4011GC has a 1.8V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.

Contextual Info: SP5T SOI Antenna Switch for WCDMA Diversity CXA2985GC Description The CXA2985GC is a low power SP5T antenna switch for WCDMA diversity switching applications. The CXA2985GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.

Contextual Info: Dual-SP3T SP3Tx2 SOI Antenna Switch CXA2947GC Description The CXA2947 is Rx power SP3Tx2 antenna switch for balanced signal switching application. The CXA2947 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.

CXA2985GC

Abstract: CXA2985 SOI RF switch CXA29
Contextual Info: SP5T SOI Antenna Switch for WCDMA Diversity CXA2985GC Description The CXA2985GC is a low power SP5T antenna switch for WCDMA diversity switching applications. The CXA2985GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.

Contextual Info: SP4T SOI Antenna Diversity Switch, and 3G/LTE Tx Switch CXA2984GC Description The CXA2984 is the SP4T antenna diversity switch for WCDMA, and Tx switch for 3G/LTE applications. The CXA2984 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator SOI technology is used for low insertion loss.

Contextual Info: SP4T SOI Antenna Diversity Switch, and 3G/LTE Tx Switch CXA2984GC Description The CXA2984 is the SP4T antenna diversity switch for WCDMA, and Tx switch for 3G/LTE applications. The CXA2984 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator SOI technology is used for low insertion loss.

"RF Switch"

Abstract: 20 qfn 3x3 RF SWITCH RF Switches QFN 4X4 P6102 AT4510 Honeywell OR SenSym rf 4*4 mm QFN Digital Attenuator
Contextual Info: 0275-000.qxp 5/15/07 12:29 PM Page 1 RF / Microwave Services HIGH PERFORMANCE SOI RF SWITCHES AND DIGITAL ATTENUATORS Short-Form Product Catalog 0275-000.qxp 5/15/07 12:29 PM Page 2 RF / Microwave Services Short-Form Product Catalog High Performance SOI CMOS RF Switches and Digital Attenuators

HX6856

Contextual Info: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6828 FEATURES OTHER RADIATION • Full Military Temperature Operation -55°C to125°C Fabricated with RICMOS” Silicon on Insulator (SOI) 0.7 |im Process • Access Time < 25 ns

Contextual Info: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is

CXA4416

Contextual Info: SP6T SOI Antenna Switch with MIPI Interface for Qualcomm chipset CXA4416GC Description The CXA4416 is the SP6T antenna diversity switch for WCDMA/3G/LTE applications. The CXA4416 has a 1.8V CMOS compatible decoder with MIPI function for Qualcomm chipset. The SONY Silicon On Insulator SOI technology is used for low insertion loss.

Contextual Info: SP4T SOI Antenna Diversity Switch, and 3G/LTE Tx Switch CXA2984GC Description The CXA2984 is the SP4T antenna diversity switch for WCDMA, and Tx switch for 3G/LTE applications. The CXA2984 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator SOI technology is used for low insertion loss.

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.6 j^m Low Power Process (Leff= 0.45 |im) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.6 nm Low Power Process (Lef)= 0.45 (im) • Read/Write Cycle Times < 17 ns (Typical)

HX6228

Abstract: honeywell memory sram
Contextual Info: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is

Contextual Info: b3E D MSS1Ö72 ÜDDlQQb SS2 « H O N S Honeywell Military Products 8K x 8 RADIATION-HARDENED STATIC ROM - SOI HX6664 FEATURES O THER RADIATION Fabricated with RICM OS Silicon on Insulator SOI 1.2 (o.m Process - Latchup Free Total Dose Hardness through

CDIP2-T28

Contextual Info: Honeywell Preliminary Military & Space Products 32K x 8 STATIC RAM— Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'” IV Silicon on Insulator SOI 0.7 (im Low Power Process (Letl= 0.55 urn) • Read/Write Cycle Times < 17 ns (Typical)