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    SOFT CHARGE SEMIKRON Search Results

    SOFT CHARGE SEMIKRON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCJ31BR7LV223KW01K Murata Manufacturing Co Ltd Soft Termination Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GCJ43DR7LV224KW01K Murata Manufacturing Co Ltd Soft Termination Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRJ43DR7LV224KW01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GCJ31BR7LV153KW01L Murata Manufacturing Co Ltd Soft Termination Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GCJ32QR7LV683KW01L Murata Manufacturing Co Ltd Soft Termination Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    SOFT CHARGE SEMIKRON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    semikron IGBT

    Abstract: semikron IGBT 100A CALCULATION SemiSel The field stop IGBT FS IGBT 400GB128D cal-hd IGBT inverter calculation igbt high frequency 1200V calculation of switching frequency of igbt inverter IGBT, PASSIVATION
    Text: Modern IGBT-FWD chip sets for 1200V applications J. Li, R. Herzer, R. Annacker, B. Koenig Semikron Elektronik GmbH, Sigmundstr. 200, 90431 Nuremberg, Germany Tel. +49.911.6559.159 Fax: +49.911.6559.293 E-mail: li.yi@semikron.com Topics: Motor drive components


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    PDF 400GB128D 600GB126D semikron IGBT semikron IGBT 100A CALCULATION SemiSel The field stop IGBT FS IGBT 400GB128D cal-hd IGBT inverter calculation igbt high frequency 1200V calculation of switching frequency of igbt inverter IGBT, PASSIVATION

    KG3B-35-5

    Abstract: semix igbt GAL semix type Designation System KG3B semix igbt modules bridge MKT .01 R 46 MKP SEMIKRON type designation wacker KG3B-35
    Text: Modules – Explanations – SEMiX SEMiX IGBT Modules Forward characteristic with minimised temperature coefficient • Features • New module platform for optimum connection between driver and intermediate circuit • Based on well-tried SEMIKRON module technologies


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    PDF 17-mm-high, KG3B-35-5 semix igbt GAL semix type Designation System KG3B semix igbt modules bridge MKT .01 R 46 MKP SEMIKRON type designation wacker KG3B-35

    SEMIKRON SKHI 65

    Abstract: SKHI 65 Semikron Skai 2 SKM75GB123D semikron IGBT semikron skai igbt trigger by opto skhi 64 Semikron skai mosfet single phase inverter IGBT driver
    Text: ✓ plug + play ✓ protection ✓ easy interface ✓ integrated DC-DC converter ✓ 4kV isolation IGBT and MOSFET SKHI - Drivers Integrated Components and Integrated Solutions SEMIKRON - IGBT/MOSFET Drivers SKHI SEMIKRON - Driver ASICs SKIC SKHI-DRIVER ✓ Protection


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    PDF D-90253 SEMIKRON SKHI 65 SKHI 65 Semikron Skai 2 SKM75GB123D semikron IGBT semikron skai igbt trigger by opto skhi 64 Semikron skai mosfet single phase inverter IGBT driver

    "SKYPER 32 PRO R"

    Abstract: SKYPER 32PRO R SKYPER 32 PRO
    Text: SKYPER 32 PRO R UL Absolute Maximum Ratings Symbol SKYPER IGBT Driver Core Supply voltage primary 16 V Input signal voltage HIGH Vs + 0.3 V GND - 0.3 V ViL Input signal voltage (LOW) IoutPEAK Output peak current 15 A IoutAVmax Output average current 50


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    Abstract: No abstract text available
    Text: SKYPER 32 PRO R UL Absolute Maximum Ratings SKYPER IGBT Driver Core Symbol Conditions Vs Supply voltage primary ViH Input signal voltage HIGH UL recognized according UL 508C UL report reference E242581 Two output channels Integrated potential free power supply


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    PDF Visol12

    Untitled

    Abstract: No abstract text available
    Text: SKiiP 39AC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Ts = 25 °C 167 A Ts = 70 °C 135 A 150 A ICnom ICRM MiniSKiiP 3 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V


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    PDF 39AC12T4V1 39AC12T4V1 E63532

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    Abstract: No abstract text available
    Text: SKiiP 38AC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM MiniSKiiP 3 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 1200 V 115 A 93


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    PDF 38AC12T4V1 38AC12T4V1 E63532

    diode 420

    Abstract: SKM600GA12E4
    Text: SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 707 A


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    PDF SKM600GA12E4 diode 420 SKM600GA12E4

    3 phase UPS block diagram using IGBT

    Abstract: DIN 17006 semikron snubber SKHI10 Igbt high voltage low current Measurement of stray inductance for IGBT semikron IGBT snubber igbt driver mosfet 400a 200V
    Text: SEMIDRIVER Absolute Maximum Ratings Ta=25 °C Symbol VS ViH IoutPEAK IoutAVmax VCE dv/dt Visol IO Rgon min Rgoff min Qout/pulse Top Tstg Term Supply voltage primary Inputsignal voltage (HIGH) (for 15 V and 5 V input level) Output peak current Output average current (max.)


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    Abstract: No abstract text available
    Text: SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 707 A


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    PDF SKM600GA12E4 CA009

    Untitled

    Abstract: No abstract text available
    Text: SKiiP 39AC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM MiniSKiiP 3 ICRM = 3 x ICnom tpsc V 167 A 135 A 150 A 450 A -20 . 20 V 10 µs -40 . 175 °C Ts = 25 °C


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    PDF 39AC12T4V1 E63532

    IGBT DRIVER SCHEMATIC

    Abstract: Technical Explanations power transistor IGBT DRIVER SEMIKRON SC 8550 Semikron SKYPER 32PRO "Technical Explanations" IGBT Driver Power Schematic RM2,54
    Text: SKYPER 32PRO - Technical Explanations SKYPER™ 32PRO Technical Explanations Revision 02 Status: preliminary -This Technical Explanation is valid for the following parts:


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    PDF 32PRO 32PRO L6100200 Rev02 IGBT DRIVER SCHEMATIC Technical Explanations power transistor IGBT DRIVER SEMIKRON SC 8550 Semikron SKYPER 32PRO "Technical Explanations" IGBT Driver Power Schematic RM2,54

    Untitled

    Abstract: No abstract text available
    Text: SKiiP 38AC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM MiniSKiiP 3 ICRM = 3 x ICnom tpsc V 115 A 93 A 100 A 300 A -20 . 20 V 10 µs -40 . 175 °C Ts = 25 °C


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    PDF 38AC12T4V1 E63532

    SEMIKRON L6100202

    Abstract: SCHEMATIC POWER SUPPLY WITH IGBTS IGBT DRIVER SCHEMATIC calculation of IGBT snubber IGBT DRIVER SCHEMATIC 3 PHASE IGBT DRIVER SCHEMATIC chip IGBT DRIVER SEMIKRON power supply for igbt driver SKYPER 32PRO "Technical Explanations" SKYPER 32PRO R
    Text: SKYPER 32PRO R . Absolute Maximum Ratings Symbol Conditions :" : :@  9$A2  A: %  % : $ SKYPERTM IGBT Driver Core =7 =7 E    "            &        &@( >     >    


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    PDF 32PRO L6100202 Rev03 SEMIKRON L6100202 SCHEMATIC POWER SUPPLY WITH IGBTS IGBT DRIVER SCHEMATIC calculation of IGBT snubber IGBT DRIVER SCHEMATIC 3 PHASE IGBT DRIVER SCHEMATIC chip IGBT DRIVER SEMIKRON power supply for igbt driver SKYPER 32PRO "Technical Explanations" SKYPER 32PRO R

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    Abstract: No abstract text available
    Text: SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 913 A Tc = 80 °C 702 A 600 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    PDF SKM600GA12E4

    skn diodes

    Abstract: B955 semikron E30 semikron skn 7000AA B9-56 152A2 gto 1600v 420F
    Text: Öl3bb71 0003^51 Sb5 « S E K G S1E D SEMIKRON SEMIKRON INC V rsm V rrm V Ifa v 420 A SKN 420 F 1800 SKN 420 F 18 2000 SKN 420 F 20 2200 SKN 420 F 22 2500 SKN 420 F 25 Symbol Ifav Fast Recovery Rectifier Diodes " ''/ T q J sin. 180; Tease = 85 °C) Conditions


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    PDF fll3bb71 B9-55 613bb71 DQ03TS4 SKN420F 152A2 DQ-200AB B9-56 skn diodes B955 semikron E30 semikron skn 7000AA B9-56 gto 1600v 420F

    75GB120D

    Abstract: skm75gb120d 75GB120 300GB circuit diagram of igbt based smps power supply SKM300GB173D
    Text: SEMIKRON SEMIDRIVER Absolute Maximum Ratings Ta=25 °C Symbol Term VS Supply voltage primary V iH Input signal voltage (HIGH) (for 15 V and 5 V input level) lOUtpEAK Output peak current lOUtAV Output average current V ce Collector-em itter voltage sense


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    Semikron ske

    Abstract: SKE4F SKE 2.5/08 SKE4F2 semikron ske 4 f 2 SKE 2 F 2/02 SKE 4 F 2/04 SKE 2,5/17 SKE4G2/04 SKE 1/08
    Text: 1SE D 2 SEMIKRON INC Ô l 3 t t 7 1 QQQ1Ö37 b | SE MIKRON - - T - 0 3 - IS Ifr m s V rsm V rrm Ifa v V trr Symbol sin. 180; Tamb = 45 °C 2A = 0,2 (IS trr — SKE4G2/02 SKE4G2/04 SKE 4 G 2/06 SKE 4 F 2/02 SKE 4 F 2/04 SKE 4 F 2/06 SKE 4 F 2/08


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    PDF SKE4G2/02 SKE4G2/04 fll3bb71 Q001fl40 Semikron ske SKE4F SKE 2.5/08 SKE4F2 semikron ske 4 f 2 SKE 2 F 2/02 SKE 4 F 2/04 SKE 2,5/17 SKE4G2/04 SKE 1/08

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    Abstract: No abstract text available
    Text: SEMIKRON SEMIDRIVER Absolute Maximum Ratings Ta=25 °C Sym bol Term VS Supply voltage prim ary ViH Input signal voltage (HIGH) VS ± 0 ,3 V liH Input signal current (HIGH) 0,34 mA Qûate max Max. output charge per pulse ±10. nC lOU tPEAK Output peak current


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    Untitled

    Abstract: No abstract text available
    Text: SEMIKRON Absolute Maximum Ratings Symbol C onditions 1 V rrm If s m l2t Tsolder Tvj.Tstg Tvj.Tstg Values Units 1200 V 720 2600 375 -5 5 + 150 A A2s °C °C °C SEMICELL CAL - Diode Chips3 SKCD 61C 120 I > 8 bondwires 300 |im 0 ) tp = 10 ms; sin; Tj = 150 °C


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    PDF 613bb71 D0Qb731

    SK 200 GAR 125

    Abstract: Semikron sk 1 SOFT CHARGE SEMIKRON Semikron sk 100
    Text: seMIKROn Absolute Maximum Ratings Symbol Conditions 1 Values 1200 ± 20 58 / 40 116 / 80 57 / 38 104 / 76 - 40 . + 150 - 40 . + 125 260 2500 VCES VGES Th = 25/80 °C IC tp < 1 ms; Th = 25/80 °C ICM IF = - |C Th = 25/80 °C IFM= —ICM tp < 1 ms; Th = 25/80 °C


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    PDF SK60GAR/L123 CaseT18 SK 200 GAR 125 Semikron sk 1 SOFT CHARGE SEMIKRON Semikron sk 100

    C4834

    Abstract: hss 002 SK30GD123 semikron SK 100 125 T
    Text: seMIKROn Absolute Maximum Ratings Symbol Conditions 1 Values 1200 ± 20 33 / 22 66 / 44 24 / 17 48 / 34 - 40 . + 150 - 40 . + 125 260 2500 VCES VGES Th = 25/80 °C IC tp < 1 ms; Th = 25/80 °C ICM IF = - |C Th = 25/80 °C IFM= —ICM tp < 1 ms; Th = 25/80 °C


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    PDF SK30GD123 C4834 hss 002 semikron SK 100 125 T

    semikron skiip 10 nec

    Abstract: No abstract text available
    Text: SEMIKRON SKiiP 10 NEC 06 - SKiiP 10 NEC 06 I Absolute Maximum Ratings Conditions 1> Symbol Inverter V ces Vges Theatsink = 25 / 80 °C lc tp < 1 ms, T heatsink —25 / 80 C Icm T h eatsink = 25 / 80 °C If = -lc Ifm = - I cm tp < 1 ms, T h eatsink = 25 / 80 °C


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    PDF Ai3bfc71 fll3bb71 DDM32Ã semikron skiip 10 nec

    SKN+26/04

    Abstract: No abstract text available
    Text: 51E D • âl3bb?l 0GG3T17 3T4 « S E K Û 5EMIKR0N SEMIKRON INC 41 A | Ifav sin. 1 8 0 ; T case 26 trr = V 400 Fast Recovery Rectifier Diodes —p Ifrms (maximum values for continuous operation V rsm V rrm A 150 ns SKN2F17/04 SKN 2 F 17/04 UNF SKN 2 F17/06


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    PDF 0GG3T17 SKN2F17/04 F17/06 SKN2F17/08 SKN2F17 SKN3F20 SKR2F17 SKR3F20 SKR2F17/04UNF SKR3F20/06 SKN+26/04