SOCKET 939 PIN DIAGRAM Search Results

thyratron tube 5c22

Abstract: circuit diagram induction heating induction heating schema 5c22 tube SCHEMA chauffage par induction Converter for Induction Heating thyratron 5c22 5C22 radar circuit modulator induction heating circuits
Contextual Info: PHILIPS 5C22 HYDROGEN THYRATRON, THYRATRON Â HYDROGENE //ASSERSTOFFTHYRATRON Application: Switching in line modulator circuits of mi­ crowave radar systems. The properties of the tube suggest other applications such as: frequency conversion high efficiency in­

SCHEMA chauffage par induction

Abstract: circuit diagram induction heating Converter for Induction Heating thyratron tube 4c35 induction heating schema induction heating circuits 4C35 Thyratron 4c35 hydrogen Thyratron induction heating control circuit diagram
Contextual Info: PHILIPS 4C35 HYDROGEN THYRATRON, THYRATRON À HYDROGENE WASSERSTOFFTHYRATRON Application: Switching in line modulator circuits of microwave radar systems. The properties of the tube suggest other applications such as: frequency conversion high efficiency in­

QQE03/12

Abstract: qqe03-12 2X15W QQE03 2x15 2x75W 2X10 Philips schema 2X40 2X39
Contextual Info: PHILIPS OQE 03/12 DOUBLE TETRODE for use as H.F. amplifier and oscillator, frequency multiplier and modulator DOUBLE TETRODE pour utilisation en amplificatrice et os­ culatrice H.F., multiplicatrice de fréquence et modulatrice DOPPELTETRODE zur Verwendung als HF-Verstärker und Os­

Contextual Info: S iD e X HS9393/9394 ^ C o rp o ra tio n * SIGNAL PROCESSING EXCELLENCE 12-BIT ULTRA HIGH SPEED, VOLTAGE or CURRENT OUTPUT D/A CONVERTER FEATURES • HS9393 — 50nsec settling time [4mA step to ± 1/2LSB HS9394 — Ifjsec maximum voltage output settling time

Contextual Info: SÌ06X HS9393/9394 SIGNAL PROCESSING EXCELLENCE 12-BIT ULTRA HIGH SPEED, VOLTAGE or CURRENT OUTPUT D/A CONVERTER FEATURES • HS9393 — 50nsec settling time 4mA step to ± 1/2 LSB HS9394 — Ijjsec maximum voltage output settling time ■ Monotonicity guaranteed over temperature

Contextual Info: HB56G132B/SB-6B/7B 1,048,576-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-548A Z Rev. 1.0 Feb. 20, 1996 Description The HB56G132 is a 1M x 32 dynamic RAM module, mounted 2 pieces of 16-Mbit DRAM (HM5118160B) sealed in SOJ package. An outline of the HB56G132 is 72-pin single in-line package. Therefore, the HB56G132 makes high

HS9390C

Abstract: HS9390 9390 9390B
Contextual Info: SÉpeX HS9390 "“c Corporali o r p o r a tio n ^ SIGNAL PROCESSING EXCELLENCE 16-BIT ULTRA HIGH SPEED, LOW GLITCH D/A CONVERTER FEATURES • 75nsec settling time 4mA step to ±0.006% ■ Segmented switching architecture reduces glitch a re a to 140% FSR-nsec

Contextual Info: NEC MOS INTEGRATED CIRCUIT MC-42S1000LAA32S SERIES 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE D escription The MC-42S1000LAA32S series is a 1 048 576 w ords by 32 bits dynam ic RAM m odule (Small O utline DIMM) on w hich 8 pieces o f 4 M DRAM : mPD42S4400LGS (TSOP(ID) are assembled.

5 pin harsh environment push pull connector

Abstract: amphenol 14 pin circular CONNECTOR socapex 39 pin Circular Multipin grommet wiring harness 19 PIN CIRCULAR push pull aerospace CONNECTORS 5015 pyle-national CP-5B16 19 PIN CIRCULAR push pull CONNECTORS CP-5D10 CP-5E12
Contextual Info: P-lok Rapid Mating Multi-Pin Industrial Connector Amphenol Industrial Sine Systems * Pyle Connectors Corporation Contents Features/Benefits _ 1-2 Insert Configuration _ 3-7 Engineering Data _ 8 Product Ordering Guide _ 9

MC428000A36FJ60

Abstract: MC-428000A36
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT MC-428000A32, 428000A36 SERIES 8 M-WORD BY 32-BIT, 8 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8,388,608 words by 32 bits dynamic RAM module on which 16 pieces of 16 M DRAM: ¿[PD4217400 are assembled.

MC428000A36FJ70

Abstract: MC428000A36FJ60 MC-428000A36FJ-70
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT MC-428000A32, 428000A36 SERIES 8 M-WORD BY 32-BIT, 8 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8,388,608 words by 32 bits dynamic RAM module on which 16 pieces of 16 M DRAM: /JPD4217400 are assembled.

Contextual Info: NEC MOS INTEGRATED CIRCUII MC-42S1000LAA32S SERIES 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S1000LAA32S series is a 1 048 576 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 8 pieces of 4 M DRAM : iiPD42S4400LGS (TSOP(II) are assembled.

ADS-942A

Abstract: ADS-942AMC ADS-942AME
Contextual Info: 9 ‘ D A T E ADS- 942A L 14-Bit, 2MHz, Low-Power Sampling A/D Converters INNOVATION a n d EXCELLENCE FEATURES • 1 4 -b it reso lution • 2 M H z m in im u m th ro u g h p u t • L ow -pow er, 2.2 W atts • F u n ctio n a lly co m p lete • In tern al re feren ce and S/H am p lifie r

Contextual Info: 9‘DATEL ADS-942 14-Bit, 2MHz Sampling A/D Converters INNOVATION and EXCELLENCE FEATURES • 1 4 -b it reso lu tio n • 2 M H z m in im u m th ro u g h p u t • F u n c tio n a lly c o m p le te • In te rn al re feren ce and sa m p le/h o ld • -8 5 d B to ta l h a rm o n ic d is to rtio n

0934H

Contextual Info: HB56A240 Series-\ 2,097,152-Word x 40-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PINOUT The HB56A240B/SB is a 2M x 40 dynamic RAM module, mounted 20 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A240B/SB is a

ballast circuit diagram

Abstract: 12V T8 ballast circuit L4832
Contextual Info: April 1997 PRELIM IN ARY Micro Linear ML4832 Electronic Dimming Ballast Controller GENERAL DESCRIPTION Complete power factor correction and dimming ballast control in one 1C The M L4832 is a complete solution for a dimmable/nondimmable, high power factor, high efficiency electronic

Contextual Info: HB56A240 Series 2,097,152-Word x 40-Bit High Density Dynamic RAM Module • PINOUT ■ DESCRIPTION The HB56A240B/SB is a 2M x 40 dynamic RAM module, mounted 20 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A240B/SB is a 72-pin single in-line package. Therefore, the HB56A240B/

Contextual Info: HB54R1G9F2-A75B/B75B/10B 1 GB Registered DDR SDRAM DIMM 128-Mword x 72-bit, 2-Bank Module 36 pcs of 64 M × 4 Components E0089H20 (Ver. 2.0) Preliminary Mar. 30, 2001 Description The HB54R1G9F2 is a 64M × 72 × 2-bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of

7m 0880

Contextual Info: <g> Military 10H519 M O T O R O LA 4-Wide 4-3-3-3 Input “OR-AND” Gate ELECTRICALLY TESTED PER: 5962-8772801 The 10H519 is a 4-wide 4-3-3-3 input OR/AND gate with one input from two gates common to pin 10. This M ECL 10H part is a functional/pinout duplication of the standard M ECL

E10505

Contextual Info: M M O T O R O L A Military 10505 Triple 2-3-2 OR/NOR Gate ELECTRICALLY TESTED PER: MIL-M-38510/06003 MPO UHM Th e 10505 is a triple 2-3-2 input OR/NOR gate. • 35 mW Max/Gate (No Load) • tpcj = 2.0 ns typ • tr, tf = 2.0 ns typ (20% - 80% ) A V A ILA B LE A S

3055 5e

Abstract: 3055 smd 10616 L 3055 motorola
Contextual Info: M M O T O R O LA Military 10616 Triple Line Receiver (High Speed) ELECTRICALLY TESTED PER: MPG 10616 The 10616 is a high speed triple differential amplifier designed for use in sens­ ing differential signals over long lines. The base bias supply (V b b ) is made

Contextual Info: M M O T O R O LA Military 10591 Hex M EC L 10K to MST Translator ELECTRICALLY TESTED PER: MPG 10591 The 10591 is a hex M ECL to IBM M ST type logic translator. A common enable (active low) is provided for gating. Open emitter outputs are provided for gating.

Q01L

Contextual Info: < > M O T O R O L A Military 10572 Dual Binary to 1-4 D ecoder High ELECTRICALLY TESTED PER: MPG 10572 The 10572 is aginary coded 2 line to dual 4 line decoder with selected outputs high. W itheitherEoorEi low, the corresponding selected 4 outputs are low. The

BXAJC

Abstract: A53 SMD saa 1049
Contextual Info: M M O TO R O LA , Military 10558 Quad 2-Input Multiplexer (Non-Inverting) ELECTRICALLY TESTED PER: 5962-8779201 The 10558 is a quad two channel multiplexer. A common select input deter­ mines which data inputs are enabled. A high (H) level enables data inputs D00,