EN50124-1
Abstract: stakpak EN-50124 Abb diode EN50124 20H2500 Ka10000 IE-33 ABB K series
Text: VRRM = IF = ABB StakPakTM H Series 2500 V 2000 A Presspack Diode 5SLF 20H2500 Preliminary Specification Doc. No. 5SYA1584-01 June 03 • Rugged SOA • High tolerance to uneven mounting pressure • Suitable for series connection • Explosion resistant package
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20H2500
5SYA1584-01
CH-5600
EN50124-1
stakpak
EN-50124
Abb diode
EN50124
20H2500
Ka10000
IE-33
ABB K series
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transistor 13003d
Abstract: 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a
Text: ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES Tj=25℃ Unless OtherWise Stated Parameter Symbol Value
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Jul-09
13003F
transistor 13003d
13003D
13003a
13003a TRANSISTOR
13003F
13003C
transistor 13003F
13003c TRANSISTOR
13003E
S W 13003a
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LEMO
Abstract: SOA1300MRI/P Peltier element CH-6805 lemo connector
Text: SOA 1300MRI Optical Amplifier Module 1.30 µm λ-Window REV 09/01 Features Specifications @ T submount = 20°C High gain Model Unit Low polarization dependence Low ripple High output saturation power 1.30 µm wavelength window mA 250 °C 10 35 Maximum Gain (G
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1300MRI
SOA1300MRI
SOA1300CRI
SOA1300MRI/A
SOA1300MRI/P
CH-6805
LEMO
SOA1300MRI/P
Peltier element
lemo connector
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6805
Abstract: M 1535 CH-6805 DSA0013226
Text: SOA 1550CRI Optical Amplifier Chip 1.55µm λ-Window REV 09/01 Specifications @ T Submount = 20°C Features High gain Low polarization dependence Low ripple High output saturation power Model Unit Supply current Maximum Gain (G ma x ) Gain ripple @ G = 20 dB
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1550CRI
SOA1550CRI/A
SOA1550CRI/P
CH-6805
6805
M 1535
DSA0013226
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LEMO
Abstract: 1550MRI Peltier element CH-6805 Peltier module thermistor SOA1550MRI/A
Text: SOA 1550MRI Optical Amplifier Module 1.55 µm λ-Window REV 09/01 Features Specifications @ T submount = 20°C High gain Model Unit Low polarization dependence Low ripple High output saturation power 1.55 µm wavelength window mA 250 °C 10 35 Maximum Gain (G
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1550MRI
SOA1550MRI
SOA1550CRI
SOA1550MRI/A
SOA1550MRI/P
CH-6805
LEMO
1550MRI
Peltier element
Peltier module thermistor
SOA1550MRI/A
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IGBT ultra fast
Abstract: 5SLY
Text: Data Sheet, Doc. No. 5SYA 1691-01 12 01 5SLY 12E1700 Fast-Diode Die VRRM = 1700 V IF = 50 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12E1700
125de
CH-5600
IGBT ultra fast
5SLY
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diode 5SLY
Abstract: 817 diode 5SLY
Text: Data Sheet, Doc. No. 5SYA 1688-01 12 01 5SLY 12J1700 Fast-Diode Die VRRM = 1700 V IF = 150 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12J1700
CH-5600
diode 5SLY
817 diode
5SLY
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stakpak
Abstract: 130025H0003 ABB K series V2250 IGBT abb stakpak abb stakpak
Text: VCE IC = = ABB StakPakTM H Series 2500 V 1300 A Presspack IGBT 5SNR 13H2500 Doc. No. 5SYA1517-01 April.03 • Rugged SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package
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13H2500
5SYA1517-01
CH-5600
stakpak
130025H0003
ABB K series
V2250
IGBT abb stakpak
abb stakpak
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5SYA 2033 document
Abstract: Ultra fast diode FAST RECOVERY DIODE 5SLY
Text: Data Sheet, Doc. No. 5SYA 1690-01 12 01 5SLY 12F1700 Fast-Diode Die VRRM = 1700 V IF = 75 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12F1700
125de
CH-5600
5SYA 2033 document
Ultra fast diode
FAST RECOVERY DIODE
5SLY
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CH-6805
Abstract: No abstract text available
Text: SOA 1300CRI Optical Amplifier Chip 1.30µm λ-Window REV 09/01 Specifications @ T Submount = 20°C Features High gain Low polarization dependence Low ripple Model Unit SOA13000CRI/P Min Supply current Maximum Gain (G ma x ) Gain ripple @ G = 20 dB Pol. Dependence
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1300CRI
SOA13000CRI/P
SOA13000CRI/A
CH-6805
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5SLY
Abstract: IGBT ultra fast
Text: Data Sheet, Doc. No. 5SYA 1689-01 12 01 5SLY 12G1700 Fast-Diode Die VRRM = 1700 V IF = 100 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12G1700
CH-5600
5SLY
IGBT ultra fast
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SOA1550CRI/X-1500
Abstract: 6805 CH-6805
Text: SOA 1550CRI/X-1500 Optical Amplifier Chip 1.55µm λ-Window REV 09/01 Features High gain Specifications @ T Submount = 20°C Model Unit SOA1550CRI/XMin Typ Low ripple Device length µm High FWM efficiency 1.55 µm Supply current mA Wavelength window Gain (G)
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1550CRI/X-1500
SOA1550CRI/XMin
SOA1550CRI/X-1500
CH-6805
6805
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1687-01 11 06 5SLY 12M1700 Fast-Diode Die VRRM =1700 V IF = 300 A Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12M1700
CH-5600
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5SMX12K1701
Abstract: No abstract text available
Text: VRRM = IF = 1700 V 150 A Fast-Diode Die 5SLX 12K1711 Die size: 11.9 x 11.9 mm Doc. No. 5SYA1662-01 Feb. 05 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol
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12K1711
5SYA1662-01
CH-5600
5SMX12K1701
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5SMX12M1701
Abstract: No abstract text available
Text: VRRM = IF = 1700 V 200 A Fast-Diode Die 5SLX 12M1711 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1663-01 Feb. 05 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol
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12M1711
5SYA1663-01
CH-5600
5SMX12M1701
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stakpak
Abstract: 20H2500 5SKF 20H2500 ABB K series EN50124-1
Text: VRRM = IF = 2500 V 2000 A ABB StakPak H Series Press-pack Diode 5SKF 20H2500 Doc. No. 5SYB 0117-02 May. 04 • High SOA • High tolerance to uneven mounting pressure • Suitable for series connection • Explosion resistant package • Modular design concept,
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20H2500
CH-5600
stakpak
20H2500
5SKF 20H2500
ABB K series
EN50124-1
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IGBT abb datasheets
Abstract: 5SMX12K1701 abb 800
Text: VRRM = IF = 1700 V 150 A Fast-Diode Die 5SLX 12K1711 Die size: 11.9 x 11.9 mm Doc. No. 5SYA1662-01 July 04 • • • • Fast and soft reverse-recovery Low losses Rugged SOA safe operating area Passivation: SIPOS Nitride plus Polyimide Maximum rated values
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12K1711
5SYA1662-01
CH-5600
IGBT abb datasheets
5SMX12K1701
abb 800
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stakpak
Abstract: 5SNX abb press-pack igbt press-pack igbt EN-50124 IGBT abb stakpak
Text: VCE IC = = 2500 V 1300 A ABB StakPak H Series Press-pack IGBT 5SNX 13H2500 preliminary Doc. No. 5SYB 0115-02 May.04 • High SOA • High tolerance to uneven mounting pressure • Suitable for series connection • Explosion resistant package • Modular design concept,
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13H2500
CH-5600
stakpak
5SNX
abb press-pack igbt
press-pack igbt
EN-50124
IGBT abb stakpak
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stakpak
Abstract: IGBT abb abb press-pack igbt 130025H0003 press-pack igbt 5SNR 10H2500 EN-50124 EN50124-1 IC 9102 EN50124
Text: VCE IC = = ABB StakPakTM H Series 2500 V 1000 A Presspack IGBT 5SNR 10H2500 Preliminary Doc. No. 5SYA1580-01 May 03 • Rugged SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package
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10H2500
5SYA1580-01
CH-5600
stakpak
IGBT abb
abb press-pack igbt
130025H0003
press-pack igbt
5SNR 10H2500
EN-50124
EN50124-1
IC 9102
EN50124
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2SK44
Abstract: 2SK44 D 2SK43 2SK427 2SK4 21A18
Text: t5 iil= 2 a ‘V“il= a 1 ‘AS=saA OS 1 ep JN szx ZH W W '0=SOA 'AS=saA 0 8 'Z ( jd ) s s io 008 m 88— 9 ï : H ‘m Z z M I= J '0 = soA 'AS=saA 0 0 ’6 (Jtí)SSTO OS (Vm) a I - O r O ‘T O - 3 ZH>iI=i •Q=soa ‘a s =soA 00'08 00 '02 (S1 ) !£ÍÁI
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2SK427
2SK44
2SK44 D
2SK43
2SK4
21A18
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th 2267.1
Abstract: 2267.1 TH 2267-1 16N05SM th+2267.1 MCP3550-60T-E/th 2267.1
Text: h a f r r RFD16N05 RFD16N05SM i s May 1992 N -Channel Enhancem ent Mode Power Field Effect Transistors MegaFETs Packages Features T0 -251 A A • 16A, 50V TOP VIEW • r DS(on) = 0.047 i i >SOURCE • UIS SOA Rating Curve (Single Pulse) DRAIN TAB” • SOA is P o w er-D issipation Lim ited
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RFD16N05
RFD16N05SM
-252AA
RFD16N05SM
AN-7260.
th 2267.1
2267.1
TH 2267-1
16N05SM
th+2267.1
MCP3550-60T-E/th 2267.1
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fp50n05
Abstract: 50n05
Text: j h a r f r RFP50N05 RFG50N05 is May 1992 N -C hannel Enhancem ent-M ode Power Field-Effect Transistors (MegaFETs Features Package TO-220AB TOP VIEW • 50A, 50V • r DS(on) = 0 .0 2 2 fi DRAIN (FLANGE) • UIS SOA Rating Curve (Single Pulse) u • SOA is P o w e r-D issip atio n Lim ited
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RFP50N05
RFG50N05
O-220AB
O-247
RFG50N05
92CS-43040
BVD88
fp50n05
50n05
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Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC filC D • fi^SOa^b OOOBfibS R U 2416 B inHUlIPWl&tllXI electronic Crtttivt IfcchnotoQiw - 7 = - T 7 - O ? Monolithic Integrated Circuit Applications: AM/FM-IF-Amplifier for mains and battery operated radios
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Untitled
Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR KSC5026 HIGH VOLTAGE AND HIGH RELIABILITY ! HIGH SPEED SWITCHING WIDE SOA TO -220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current (Pulse)
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KSC5026
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