Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SO8 WIDE PACKAGE Search Results

    SO8 WIDE PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    SO8 WIDE PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SO 8 PSMN013-30KL N-channel 30 V 13 mΩ logic-level MOSFET in SO8 Rev. 01 — 14 April 2011 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode MOSFET in SO8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial,


    Original
    PSMN013-30KL PDF

    Untitled

    Abstract: No abstract text available
    Text: SO 8 PSMN9R0-30KL N-channel 30 V 9 mΩ logic-level MOSFET in SO8 Rev. 01 — 14 April 2011 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode MOSFET in SO8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial,


    Original
    PSMN9R0-30KL PDF

    Untitled

    Abstract: No abstract text available
    Text: SO 8 PSMN017-30KL N-channel 30 V 17 mΩ logic-level MOSFET in SO8 Rev. 01 — 14 April 2011 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode MOSFET in SO8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial,


    Original
    PSMN017-30KL PDF

    Untitled

    Abstract: No abstract text available
    Text: SO 8 PSMN5R5-30KL N-channel 30 V 5.8 mΩ logic-level MOSFET in SO8 Rev. 01 — 17 March 2011 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode MOSFET in SO8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial,


    Original
    PSMN5R5-30KL PDF

    UA776

    Abstract: 77607 transistor BC 247 TR BC TRANSISTOR BC 157 1N4148 UA741 UA776C UA776CD UA776CN
    Text: UA776 PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIERS . . . MICROPOWER OPERATION NO FREQUENCY COMPENSATION REQUIRED WIDE PROGRAMMING RANGE HIGH SLEW RATE SHORT-CIRCUIT PROTECTION PROGRAMMABLE SINGLE OP-AMPs N DIP8 Plastic Package D SO8 (Plastic Micropackage)


    Original
    UA776 UA776C UA776I UA776M UA776CN, UA776CD UA776 77607 transistor BC 247 TR BC TRANSISTOR BC 157 1N4148 UA741 UA776C UA776CD UA776CN PDF

    TRANSISTOR BC 157 pin connection

    Abstract: UA776 TRANSISTOR BC 157 transistor BC 247 BF247 sgs thomson Fets TRANSISTOR BC 313 1N4148 77603 UA776C
    Text: UA776 PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIERS . . . MICROPOWER OPERATION NO FREQUENCY COMPENSATION REQUIRED WIDE PROGRAMMING RANGE HIGH SLEW RATE SHORT-CIRCUIT PROTECTION PROGRAMMABLE SINGLE OP-AMPs N DIP8 Plastic Package D SO8 (Plastic Micropackage)


    Original
    UA776 UA776C UA776I UA776M UA776CN, UA776CD UA776 TRANSISTOR BC 157 pin connection TRANSISTOR BC 157 transistor BC 247 BF247 sgs thomson Fets TRANSISTOR BC 313 1N4148 77603 UA776C PDF

    UA776

    Abstract: UA741 UA776C UA776CN UA776I UA776M UA741 DIP8
    Text: UA776 PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIERS . . . MICROPOWER OPERATION NO FREQUENCY COMPENSATION REQUIRED WIDE PROGRAMMING RANGE HIGH SLEW RATE SHORT-CIRCUIT PROTECTION PROGRAMMABLE SINGLE OP-AMP N DIP8 Plastic Package D SO8 (Plastic Micropackage)


    Original
    UA776 UA776C UA776I -40oC, 105oC UA776M -55oC, 125oC UA776CN UA776 UA741 UA776C UA776CN UA776I UA776M UA741 DIP8 PDF

    lm336 pin diagram

    Abstract: LM236-LM336 BAP 16 voltage regulator KVT 20 Temperature LM336B ST make JESD97 LM236 LM336 LM336B LM336D 5.0
    Text: LM236-LM336 2.5V voltage references Features ● Low temperature coefficient ● Wide operating current of 400µA to 10mA ● 0.2Ω dynamic impedance ● Guaranteed temperature stability ● Fast turn-on TO92 Plastic package Description SO8 (Plastic micropackage)


    Original
    LM236-LM336 LM236 LM336 lm336 pin diagram LM236-LM336 BAP 16 voltage regulator KVT 20 Temperature LM336B ST make JESD97 LM336B LM336D 5.0 PDF

    Untitled

    Abstract: No abstract text available
    Text: LM236-LM336 2.5V voltage references Features ● Low temperature coefficient ● Wide operating current of 400µA to 10mA ● 0.2Ω dynamic impedance ● Guaranteed temperature stability ● Fast turn-on TO92 Plastic package Description SO8 (Plastic micropackage)


    Original
    LM236-LM336 LM236 LM336 PDF

    LM336

    Abstract: lm336 pin diagram LM236 LM336B lm336 to92
    Text: LM236 LM336,B 2.5V VOLTAGE REFERENCES • LOW TEMPERATURE COEFFICIENT ■ WIDE OPERATING CURRENT OF 400µA TO 10mA ■ 0.2Ω DYNAMIC IMPEDANCE Z TO92 Plastic Package ■ GUARANTEED TEMPERATURE STABILITY ■ FAST TURN-ON D SO8 (Plastic Micropackage) DESCRIPTION


    Original
    LM236 LM336 LM236 lm336 pin diagram LM336B lm336 to92 PDF

    lm336 pin diagram

    Abstract: LM336 lm317 to92 Datasheet lm317 so8 lm336 datasheet equivalent lm336 lm317 TO92 1N457 equivalent equivalent diode for 1n457 lm336 shunt regulator pin diagram
    Text: LM236,A LM336,B 2.5V VOLTAGE REFERENCES . . . LOW TEMPERATURE COEFFICIENT WIDE OPERATING CURRENT OF 400µA TO 10mA 0.2Ω DYNAMIC IMPEDANCE GUARANTEED TEMPERATURE STABILITY FAST TURN-ON Z TO92 Plastic Package D SO8 (Plastic Micropackage ORDER CODES Part numTemperature Range


    Original
    LM236 LM336 lm336 pin diagram lm317 to92 Datasheet lm317 so8 lm336 datasheet equivalent lm336 lm317 TO92 1N457 equivalent equivalent diode for 1n457 lm336 shunt regulator pin diagram PDF

    f 4558

    Abstract: 4558 RS 4558 ci 4558 4558 schematic diagram 4558 datasheet power amp 4558 4558 C 4558 d 4558 equivalent
    Text: MC4558 WIDE BANDWIDTH DUAL BIPOLAR OPERATIONAL AMPLIFIERS INTERNALLY COMPENSATED SHORT–CIRCUIT PROTECTION GAIN AND PHASE MATCH BETWEEN AMPLIFIERS LOW POWER CONSUMPTION PIN TO PIN COMPATIBLE WITH MC1458/LM358 GAIN BANDWIDTH PRODUCT at 100kHz 5.5MHz D SO8


    Original
    MC4558 MC1458/LM358 100kHz) MC4558 MC1458 MC4558C MC4558I f 4558 4558 RS 4558 ci 4558 4558 schematic diagram 4558 datasheet power amp 4558 4558 C 4558 d 4558 equivalent PDF

    lm336 pin diagram

    Abstract: LM336 lm317 TO92 lm317 so8 lm317 to92 Datasheet lm3364 lm336 shunt regulator pin diagram lm336 datasheet N457 LM308
    Text: LM236 LM336,B 2.5V VOLTAGE REFERENCES . . . LOW TEMPERATURE COEFFICIENT WIDE OPERATING CURRENT OF 400µA TO 10mA 0.2Ω DYNAMIC IMPEDANCE GUARANTEED TEMPERATURE STABILITY FAST TURN-ON Z TO92 Plastic Package D SO8 (Plastic Micropackage DESCRIPTION The LM236 and LM336 are precision 2.5V regulator


    Original
    LM236 LM336 LM236 lm336 pin diagram lm317 TO92 lm317 so8 lm317 to92 Datasheet lm3364 lm336 shunt regulator pin diagram lm336 datasheet N457 LM308 PDF

    LM336

    Abstract: lm336 pin diagram lm3364 LM336 5v lm317 so8 lm317 TO92 lm317 to92 Datasheet temperature coefficient of 1n4148 lm336 to92 lm336 datasheet
    Text: LM236 LM336,B 2.5V VOLTAGE REFERENCES . . . LOW TEMPERATURE COEFFICIENT WIDE OPERATING CURRENT OF 400µA TO 10mA 0.2Ω DYNAMIC IMPEDANCE GUARANTEED TEMPERATURE STABILITY FAST TURN-ON Z TO92 Plastic Package D SO8 (Plastic Micropackage DESCRIPTION The LM236 and LM336 are precision 2.5V regulator


    Original
    LM236 LM336 LM236 lm336 pin diagram lm3364 LM336 5v lm317 so8 lm317 TO92 lm317 to92 Datasheet temperature coefficient of 1n4148 lm336 to92 lm336 datasheet PDF

    HP3585

    Abstract: ST70134 ST70135 TS635 TS635ID TS635IDW TS636
    Text: TS635 DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE • LOW NOISE : 3.2nV/√Hz, 1.5pA/√Hz ■ HIGH OUTPUT CURRENT : 160mA min. ■ VERY LOW HARMONIC AND INTERMODULATION DISTORTION D SO8 Plastic Micropackage ■ HIGH SLEW RATE : 40V/µs


    Original
    TS635 160mA ST70134 ST70135. TS635 130MHz) HP3585 ST70135 TS635ID TS635IDW TS636 PDF

    smd marking k301

    Abstract: SMD sot23-5 marking E1 sti7xxx K301 marking marking k301 TSH70 TSH71 TSH72 TSH73 TSH74
    Text: TSH70,71,72,73,74,75 Rail-to-Rail, Wide-Band, Low-Power Operational Amplifiers • 3V, 5V, ±5V specifications ■ 3dB bandwidth: 90MHz ■ Gain bandwidth product: 70MHz ■ Slew rate: 100V/ms Pin Connections top view TSH70 : SOT23-5/SO8 Output 1 VCC - 2


    Original
    TSH70 90MHz 70MHz 00V/ms TSH70 OT23-5/SO8 TSH71 OT23-5, smd marking k301 SMD sot23-5 marking E1 sti7xxx K301 marking marking k301 TSH71 TSH72 TSH73 TSH74 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSH70,71,72,73,74,75 Rail-to-Rail, Wide-Band, Low-Power Operational Amplifiers • 3V, 5V, ±5V specifications ■ 3dB bandwidth: 90MHz ■ Gain bandwidth product: 70MHz ■ Slew rate: 100V/ms Pin Connections top view TSH70 : SOT23-5/SO8 Output 1 VCC - 2


    Original
    TSH70 70MHz 90MHz 00V/ms TSH70 OT23-5/SO8 TSH71 OT23-5, PDF

    TDA1308 equivalent

    Abstract: TDA1308 application notes tda1308 TDA1545A IEC134 TDA1308T MBC180 TDA1308 application
    Text: Philips Semiconductors Product specification Class AB stereo headphone driver TDA1308 FEATURES GENERAL DESCRIPTION • Wide temperature range The TDA1308 is an integrated class AB stereo headphone driver contained in an SO8 or a DIP8 plastic package. The device is fabricated in a 1 mm CMOS process and has


    Original
    TDA1308 TDA1308 TDA1308 equivalent TDA1308 application notes TDA1545A IEC134 TDA1308T MBC180 TDA1308 application PDF

    block diagram headphone

    Abstract: CM8608IS headphone driver CM8608 CM8608IP
    Text: CM8608 CLASS AB STEREO HEADPHONE DRIVER GENERAL DESCRIPTION FEATURES The CM8608 is an integrated class AB stereo headphone Wide temperature range driver contained in an SO8 or a DIP8 plastic package. The No switch ON/OFF clicks device is fabricated in a 1 mm CMOS process and has


    Original
    CM8608 CM8608 block diagram headphone CM8608IS headphone driver CM8608IP PDF

    sqfp 14x20

    Abstract: 74ALSXX P51XA-G3 OTP-e PC 74 HCT 32 P sQFP 14X14 TDA1308 equivalent SG 2368 tqfp 14x14 tray TDA1308 application notes
    Text: Philips Semiconductors Product specification Class AB stereo headphone driver TDA1308 FEATURES GENERAL DESCRIPTION • Wide temperature range The TDA1308 is an integrated class AB stereo headphone driver contained in an SO8 or a DIP8 plastic package. The device is fabricated in a 1 mm CMOS process and has


    Original
    30MHz 80C51 sqfp 14x20 74ALSXX P51XA-G3 OTP-e PC 74 HCT 32 P sQFP 14X14 TDA1308 equivalent SG 2368 tqfp 14x14 tray TDA1308 application notes PDF

    TDA1308

    Abstract: TDA1308T TDA1545A IEC134 dip 4814 MBC-18 TDA1308 application notes
    Text: Philips Semiconductors Product specification Class AB stereo headphone driver TDA1308 FEATURES GENERAL DESCRIPTION • Wide temperature range The TDA1308 is an integrated class AB stereo headphone driver contained in an SO8 or a DIP8 plastic package. The device is fabricated in a 1 mm CMOS process and has


    Original
    TDA1308 TDA1308 SCD34 TDA1308T TDA1545A IEC134 dip 4814 MBC-18 TDA1308 application notes PDF

    RF3826

    Abstract: Gan transistor
    Text: RF3826 Proposed 30 – 2500 MHz, 9W GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: AlN Leadless Chip Carrier / SO8 Product Description Features ƒ Advanced GaN HEMT Technology ƒ Advanced Heat-Sink Technology The RF3826 is a wideband Power Amplifier designed for CW and


    Original
    RF3826 RF3826 Gan transistor PDF

    TS613

    Abstract: No abstract text available
    Text: TS613  DUAL WIDE BAND OPERATIONAL AMPLIFIER WITH HIGH OUTPUT CURRENT . . . LOW NOISE : 3nV/√Hz, 1.2pA/√Hz HIGH OUTPUT CURRENT : 200mA min. VERY LOW HARMONIC AND INTERMODULATION DISTORTION HIGH SLEW RATE : 40V/ s SPECIFIED FOR 25Ω LOAD D SO8 Plastic Micropackage


    Original
    TS613 200mA TS613ID TS613 130MHz) 160mA PDF

    TS613

    Abstract: No abstract text available
    Text: TS613  DUAL WIDE BAND OPERATIONAL AMPLIFIER WITH HIGH OUTPUT CURRENT . . . LOW NOISE : 3nV/√Hz, 1.2pA/√Hz HIGH OUTPUT CURRENT : 200mA min. VERY LOW HARMONIC AND INTERMODULATION DISTORTION HIGH SLEW RATE : 40V/ s SPECIFIED FOR 25Ω LOAD D SO8 Plastic Micropackage


    Original
    TS613 200mA TS613ID TS613 130MHz) 160mA PDF