MHDR1X2
Abstract: CR3216-1206 d9 dl sot23 Capacitor Semiconductor SIM Model "EI CORE" Si7156DN MHDR1X MLP44-16 planar transformer layout EI 33 transformer
Text: SiP11206DB Vishay Siliconix 200 W 1/16th Brick IBC Demo Board using SiP11206 DESCRIPTION SiP11206 is a half-bridge controller for intermediate bus converters. While SiP11206 allows for overall better efficiency through out the input voltage range, since its duty
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SiP11206DB
1/16th
SiP11206
BAS16
MMUN2213LT1G
S09-0324-Rev.
MHDR1X2
CR3216-1206
d9 dl sot23
Capacitor Semiconductor SIM Model
"EI CORE"
Si7156DN
MHDR1X
MLP44-16
planar transformer layout
EI 33 transformer
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IDTP9036A
Abstract: OM350
Text: 12V Wireless Power Transmitter IC for TX-A6 Product Datasheet IDTP9036A Features Description 5W Solution for Wireless Power Consortium WPC -Compliant Power Transmitter Design TX-A6 Conforms to WPC Specification Version 1.1 Specifications Reduced EMI To Meet Requirements of WPC
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IDTP9036A
IDTP9036A
OM350
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ISL9504
Abstract: macbook pro 13 m9 apple PP3V42G3H 51c7 macbook 5d4 diode "board view" macbook diode 62b3 28b sot23-3
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEMATIC,MACBOOK PRO 17" ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ?
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ISL9504
Abstract: ntc 5D-7 PP3V42G3H U8950 ISL9504CRZ H8S2116 diode 76b2 ar9350 d61 6a-1 ISL6269
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M59 ZONE ECN A ENG APPD DESCRIPTION OF CHANGE 463525 PRODUCTION RELEASE
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dfn8 tray
Abstract: No abstract text available
Text: Single-Chip 5V Wireless Power Transmitter IC for TX-A5 and A11 Product Datasheet IDTP9035A Features Description 5W Solution for Wireless Power Consortium WPC -compliant power transmitter design A5/A11 Conforms to WPC specification version 1.1 specifications
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IDTP9035A
A5/A11
dfn8 tray
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LR2512
Abstract: 6SA330M EMK316BJ225ML 4SP560M 595D106X0010A2T 595D475X0016A2T DO3316P-102HC FDS6680 MAX1639 MAX1639EVKIT
Text: MAX1639 Evaluation Kit _Features ♦ +4.5V to +5.5V Input Voltage Range _Component List DESIGNATION QTY C1 1 C2, C3 2 C4, C5, C9 CC1 CC2 3 1 1 C6 1 C7 1 C8 1 C10, D1 D2 1 L1 1 N1, N2 1 R1 1 R2 R3 R4 R5 R6 U1 JU1
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MAX1639
6SA330M
4SP560M
1000pF
C3216X7R1C225M
EMK316BJ225ML
595D106X0010A2T
LR2512
6SA330M
EMK316BJ225ML
4SP560M
595D106X0010A2T
595D475X0016A2T
DO3316P-102HC
FDS6680
MAX1639EVKIT
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C3979
Abstract: 65a3 ISL9504 Apple K23 MLB c5296 77A5 PP3V42G3H 65C6 ar9350 PP3V42
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M59 ZONE ECN A ENG APPD DESCRIPTION OF CHANGE 463525 PRODUCTION RELEASE
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sil1162
Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
Text: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM
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MPC7450
200PIN
RPAK10P2C
1000BT
SN74AUC1G04
sil1162
Diode 31d8 06
31d8 diode
C828 3-pin transistor
2N7002DW
3 PIN hall effect sensor u58
hall effect sensor u58
zener 12a2
powerbook
bubba oscillator schematic
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OZ960
Abstract: zener diode 7A3 inverter 16b2 zener diode zener 15B2 diode 21D8 10 C4237 54b6 diode 21D8 zener 9A2 11b3 DIODE ZENER
Text: CR-1 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. PAGE D C 4,5 6,7 8 9 MPC7450 MAXBUS CPU SPEED & CONFIG OPTIONS BOOTBANGER CPU LA CONNECTORS, ESP, CPU BYPASS
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MPC7450
OZ960
zener diode 7A3
inverter 16b2 zener diode
zener 15B2
diode 21D8 10
C4237
54b6
diode 21D8
zener 9A2
11b3 DIODE ZENER
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OZ960
Abstract: 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode
Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B A DESCRIPTION OF CHANGE 279015 ENGINEERING RELEASED
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MPC7450
OZ960
22B4 diode ZENER
c5763
C1904
7A3 zener diode
UL796
258C5
58A5
zener diode 7A3
9A2 zener diode
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oz960
Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO
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MPC7450
oz960
16b3 zener diode
Zener 13B3
zener diode 7A3
SN0210
6R-P10
16B1 zener diode
Zener Diode 13B3
q59 apple
C5763
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31d8 diode
Abstract: r2561 741G32 zener 12a2 27b4 R3381 zener 12B2 2N7002DW MAX4172 TH 2267 charger circuit diagram
Text: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM PCB NOTES AND HOLES
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MPC7450
200PIN
31d8 diode
r2561
741G32
zener 12a2
27b4
R3381
zener 12B2
2N7002DW
MAX4172
TH 2267 charger circuit diagram
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Diode 31d8 06
Abstract: r2561 11A3 bubba oscillator schematic 31d8 diode 2N7002DW zener DB3 C209 bubba oscillator 88E1111 config MBR0520LT
Text: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 C B CONTENTS
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MPC7450
200PIN
Diode 31d8 06
r2561
11A3
bubba oscillator schematic
31d8 diode
2N7002DW
zener DB3 C209
bubba oscillator
88E1111 config
MBR0520LT
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ISL9504
Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
Text: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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03/19/m
100-ohm
95-ohms
ISL10
ISL11
ISL9504
j4310
BD9828
ISL9504B
NVIDIA G84m
RN5VD30A-F
SLG2AP101
Q7080
88E8058
PP3V42G3H
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C6073
Abstract: SIL1178 c6074 C9013 NEC C3568 c4793 c5885 K769 C6090 15B1 zener diode
Text: 8 6 7 REV STD D PDF CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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RP1150
RP1151
RP2450
RP3510
RP3511
RP3512
RP3513
RP3514
RP3990
RP4800
C6073
SIL1178
c6074
C9013
NEC C3568
c4793
c5885
K769
C6090
15B1 zener diode
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db3 c918
Abstract: TRANSISTOR 6b8 SMD Q88 apple ZENER Diode 12B2 2c213 diode zener 12a2 diode DB3 C531 bubba oscillator schematic smd transistor 6a1 U52 A4 apple
Text: 8 6 7 PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 C B 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. D 2 3 4 5 REV 10/15/2004 CONTENTS
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MPC7450
200PIN
1000BT
SN74AUC1G04
SN74AUC1G08
ADT7460
KXM52
FAN2558
db3 c918
TRANSISTOR 6b8 SMD
Q88 apple
ZENER Diode 12B2
2c213
diode zener 12a2
diode DB3 C531
bubba oscillator schematic
smd transistor 6a1
U52 A4 apple
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c6073
Abstract: C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390
Text: 6 7 REV STD D CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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RP6152
RP6158
RP6159
RP6707
RP6708
RP6709
RP6710
RP6720
RP6721
RP6722
c6073
C6074
C6091
C6089
1CA033
ar9103
SIL1178
NEC C3568
c6092
U2390
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ISL9504
Abstract: ISL9504B M75 MLB 820-2101 PP3V42G3H C8550 c7381 N8242 c5855 ISL9504 U7500 c3334 schematic diagram
Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT
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ISL10
ISL11
ISL9504
ISL9504B
M75 MLB 820-2101
PP3V42G3H
C8550
c7381
N8242
c5855
ISL9504 U7500
c3334 schematic diagram
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PP3V42G3H
Abstract: apple J8000 ISL9504 NVIDIA G84m C4740 p66 apple C8050 apple computer ad30 ok 1500 3p3 C7103
Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD SCHEM,MLB,MBP15 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 04/24/2007
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MBP15
ISL10
ISL11
PP3V42G3H
apple J8000
ISL9504
NVIDIA G84m
C4740
p66 apple
C8050
apple computer
ad30 ok 1500 3p3
C7103
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R012F
Abstract: 100uf 10V Electrolytic Capacitor 4SP220M 10SL100M 595D475X0016A2T DO3316P-152 IRF7413 MAX1625 MAX1625EVKIT MBRS340T3
Text: MAX1625 Evaluation Kit The MAX1625 evaluation kit EV kit provides a 2.5V output voltage from a 4.5V to 5.5V input. It delivers up to 5A output current with greater than 90% efficiency. The MAX1625 features a resistor-programmable switching frequency from 100kHz to 1MHz, as well as currentmode operation for superior load- and line-transient
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MAX1625
100kHz
500kHz
R012F
100uf 10V Electrolytic Capacitor
4SP220M
10SL100M
595D475X0016A2T
DO3316P-152
IRF7413
MAX1625EVKIT
MBRS340T3
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Untitled
Abstract: No abstract text available
Text: OCT 2 \990 PLESSEY SEPTEMBER 1990 S E M IC O N D U C T O R S — MV66401/2/3/4 64-WORD X 4/5-BIT FIRST-IN FIRST-OUT MEMORIES Supersedes edition in August 1987 High Speed Data Products 1C Handbook 402 NC 404 0E 1 18 !] Vcc 2 17 ] SO si C 3 16 ] OR IR[ 15 ]o o
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OCR Scan
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MV66401/2/3/4
64-WORD
MV66402
MV66404
MV66401
MV66403
200mW
25MHz
V66403/4
MV66030
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Untitled
Abstract: No abstract text available
Text: CY7C401/CY7C403 CY7C402/CY7C404 s CYPRESS SEMICONDUCTOR Cascadeable 64 x 4 FIFO and 6 4 x 5 FIFO Features Functional Description • 64 x 4 CY7C401 and CY7C403 64 X 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO ) T he CY7C401 and CY 7C403 are asynchronousfirst-in first-out m em ories (F IF O s)
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CY7C401/CY7C403
CY7C402/CY7C404
CY7C401
CY7C403)
CY7C402
CY7C404)
7C403
7C402
7C404
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7C402
Abstract: No abstract text available
Text: CY7C401/CY7C403 CY7C402/CY7C404 CYPRESS SEMICONDUCTOR Cascadable 64 x 4 FIFO and 6 4 x 5 FIFO Functional Description • 64 X 4 CY7C401 and CY7C403 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO) The CY7C401 and CY7C403 are asynch
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CY7C401/CY7C403
CY7C402/CY7C404
CY7C401
CY7C403)
CY7C402
CY7C404)
25-MHz
50-ns
CY7C403
CY7C404
7C402
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4025PC
Abstract: No abstract text available
Text: CY7C401/CY7C403 CY7C402/CY7C404 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO CYPRESS Features • 64 x 4 CY7C401 and CY7C403 64 x 5 (CY7C402 and CY7C404) High-speed first-in flrst-out memory (FIFO) • Processed With high-speed CMOS for optimum speed/power
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CY7C401
CY7C403)
CY7C402
CY7C404)
25-MHz
50-ns
CY7C403
CY7C404
7401A/67402A
CY7C401/CY7C403
4025PC
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