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    SO 2503 Search Results

    SO 2503 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    SD250-3L Coilcraft Inc Pulse Transformer, BASE/GATE DRIVE Application(s), 1:1:1, ROHS COMPLIANT Visit Coilcraft Inc
    H5N2503P-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 50A 55Mohm To-3P Visit Renesas Electronics Corporation
    PS2503-1-A Renesas Electronics Corporation Low Input Current, , / Visit Renesas Electronics Corporation
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    SO 2503 Price and Stock

    Renesas Electronics Corporation EVK5X2503SOCK

    Clock & Timer Development Tools EVK5X2503SOCK 5X2503 EVAL/SOCKET BOARD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EVK5X2503SOCK
    • 1 $48.75
    • 10 $48.75
    • 100 $48.75
    • 1000 $48.75
    • 10000 $48.75
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    Renesas Electronics Corporation EVK5L2503SOCK

    Clock & Timer Development Tools EVK5L2503SOCK 5L2503 EVAL/SOCKET BOARD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EVK5L2503SOCK
    • 1 $60.94
    • 10 $60.94
    • 100 $60.94
    • 1000 $60.94
    • 10000 $60.94
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    HPX SO2503

    Tape: sealing; W: 25mm; L: 3m; Thk: 0.5mm; red; silicone; max.200°C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SO2503 1 1
    • 1 $8.64
    • 10 $7.56
    • 100 $7.56
    • 1000 $7.56
    • 10000 $7.56
    Buy Now

    SO 2503 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: M1N51264DSH8B1G / M1N25664DSH4B1G M1S51264DSH8B1G / M1S25664DSH4B1G 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Unbuffered DDR SO-DIMM based on 110nm 512M bit die B


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    PDF M1N51264DSH8B1G M1N25664DSH4B1G M1S51264DSH8B1G M1S25664DSH4B1G 512MB 256MB PC2700 DDR333 200-Pin

    M2N51264DSH8B1G-6K

    Abstract: pc2700 memory M2N51264DSH8B1G
    Text: M2N51264DSH8B1G 512MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Unbuffered DDR SO-DIMM based on 110nm 512M bit die B device, organized as 32Mx16 DDR SDRAM


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    PDF M2N51264DSH8B1G 512MB PC2700 DDR333 200-Pin 110nm 32Mx16 M2N51264DSH8B1G-6K pc2700 memory

    M1S51264DSH8B1G-6K

    Abstract: No abstract text available
    Text: M1N1G64DS8HB0F / M1N51264DSH8B1G / M1N25664DSH4B1G M1S1G64DS8HB0F / M1S51264DSH8B1G / M1S25664DSH4B1G 1GB, 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM


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    PDF M1N1G64DS8HB0F M1N51264DSH8B1G M1N25664DSH4B1G M1S1G64DS8HB0F M1S51264DSH8B1G M1S25664DSH4B1G 512MB 256MB PC2700 DDR333 M1S51264DSH8B1G-6K

    Untitled

    Abstract: No abstract text available
    Text: NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM


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    PDF NT1GD64S8HB0FM NT512D64SH8B0GM NT256D64SH4B0GM NT1GD64S8HB0FN NT512D64SH8B0GN NT256D64SH4B0GN 512MB 256MB PC2700 DDR333

    nt512d64sh8b0gn-6k

    Abstract: NANYA NT256D64SH4B0GN-6K NT1G NT512D64SH8B PC2700 DDR333 256mb ddr333 200 pin
    Text: NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM


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    PDF NT1GD64S8HB0FM NT512D64SH8B0GM NT256D64SH4B0GM NT1GD64S8HB0FN NT512D64SH8B0GN NT256D64SH4B0GN 512MB 256MB PC2700 DDR333 nt512d64sh8b0gn-6k NANYA NT256D64SH4B0GN-6K NT1G NT512D64SH8B PC2700 256mb ddr333 200 pin

    nt512d64sh8b0gn-6k

    Abstract: No abstract text available
    Text: NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM


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    PDF NT1GD64S8HB0FM NT512D64SH8B0GM NT256D64SH4B0GM NT1GD64S8HB0FN NT512D64SH8B0GN NT256D64SH4B0GN 512MB 256MB PC2700 DDR333 nt512d64sh8b0gn-6k

    NT512D64SH8B0GM-75B

    Abstract: No abstract text available
    Text: NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB PC2700 and PC2100 200 pin Unbuffered DDR SO-DIMM Based on DDR333/266 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM


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    PDF NT1GD64S8HB0FM NT512D64SH8B0GM NT256D64SH4B0GM NT1GD64S8HB0FN NT512D64SH8B0GN NT256D64SH4B0GN 512MB 256MB PC2700 PC2100 NT512D64SH8B0GM-75B

    25032f

    Abstract: pt100 measurement relay circuit to drive heater LCM 4002 Thermocouple circuit EN50081-2 EN50082-2 EN61000-6-2 EN61326-1 spdt 12v 150 OHM relay
    Text: 1.2.1 All procedures in this Manual should be performed only by personnel competent and authorised to do so. All local and national regulations pertaining to electrical installations must be rigidly observed. 1 INSTALLATION - MECHANICAL 1.1 1.1.1 SITE PRE-REQUISITES


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    PDF EN50081-2 EN61010-1 UL3121-1 100mm; 120mm 25032f pt100 measurement relay circuit to drive heater LCM 4002 Thermocouple circuit EN50082-2 EN61000-6-2 EN61326-1 spdt 12v 150 OHM relay

    keramische Werke Hermsdorf

    Abstract: hescho scheibentrimmer hermsdorf Werke Hermsdorf TK 2518
    Text: H E S C H O –Trimmer Die Scheibentrimmer der Firma Hescho Keramische Werke Hermsdorf sind in historischen Geräten der enddreisiger und vierziger Jahre sehr verbreitet. Leider ist die Silberschicht meist oxidiert, so dass die Trimmer entweder ausgewechselt oder mit Kondensatoren bzw.


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    PDF Nennspannung350 keramische Werke Hermsdorf hescho scheibentrimmer hermsdorf Werke Hermsdorf TK 2518

    84-1LMI epoxy adhesive

    Abstract: 84-1LMI thermocompression Die Attach and Bonding Guidelines copper bond wire PEDESTAL FOR MMIC BRASS
    Text: GaAs MMIC ESD, Die Attach and Bonding Guidelines Application Note # 54 - Rev. A May 2000 1.0 ESD Considerations A GaAs IC can be destroyed electrically by a static or other discharge through the device. It must therefore be handled so these effects cannot occur.


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    PDF SPT-1002-A-W-2015-L-F 84-1LMI epoxy adhesive 84-1LMI thermocompression Die Attach and Bonding Guidelines copper bond wire PEDESTAL FOR MMIC BRASS

    NEC VFD Display

    Abstract: tdk vfd power supply module tdk vfd power module digital wrist watch lcd display detail 78K/0 Series Users Manual Instruction DIGITAL VFD CLOCK IC NEC FIP vfd a14 digital wrist watch circuit FIP VFD
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD78P018F A 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The µ PD78P018F(A) comes under a more severe quality assurance program than the µ PD78P018F (standard grade), so it is classified as special grade in NEC’s quality grade classification.


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    PDF PD78P018F PD78P018F PD78018F 78K/0 NEC VFD Display tdk vfd power supply module tdk vfd power module digital wrist watch lcd display detail 78K/0 Series Users Manual Instruction DIGITAL VFD CLOCK IC NEC FIP vfd a14 digital wrist watch circuit FIP VFD

    mPD78016F

    Abstract: CRYSTAL RESONATOR CERAMIC 78018FY 78P018FGC C11531E uPD78018F uPD78P018F uPD78P018FCW PD78015
    Text: DATA SHEET MOS INTEGRATED CIRCUIT mPD78P018F A 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The m PD78P018F(A) comes under a more severe quality assurance program than the m PD78P018F (standard grade), so it is classified as special grade in NEC’s quality grade classification.


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    PDF mPD78P018F PD78P018F PD78P018F mPD78018F 78K/0 PD78018F mPD78016F CRYSTAL RESONATOR CERAMIC 78018FY 78P018FGC C11531E uPD78018F uPD78P018F uPD78P018FCW PD78015

    NEC R4400

    Abstract: VR4000 VR4100 VR4300TM NEC VR4300
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD30100 VR4100TM 64-BIT MICROPROCESSOR The µPD30100 VR4100 is a high-performance, 64-bit RISC (Reduced Instruction Set Computer) type microprocessor employing the RISC architecture developed by MIPS. The VR4100 is compact and consumes little power so that it can be used in battery-driven, high-performance


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    PDF PD30100 VR4100TM 64-BIT VR4100) VR4100 U10050E) NEC R4400 VR4000 VR4300TM NEC VR4300

    keramische Werke Hermsdorf

    Abstract: cc 2514 Scans-048 hescho hermsdorf DSAGER000245 Werke Hermsdorf scheibentrimmer
    Text: H E S C H O -Trimmer Die Scheibentrimmer der Firma Hescho Keramische Werke Hermsdorf sind in historischen Geräten der enddreisiger und vierziger Jahre sehr verbreitet. Leider ist die Silberschicht meist oxidiert, so dass die Trimmer entweder ausgewechselt oder mit Kondensatoren bzw.


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    PDF Nennspannung350 keramische Werke Hermsdorf cc 2514 Scans-048 hescho hermsdorf DSAGER000245 Werke Hermsdorf scheibentrimmer

    300U20

    Abstract: R13B 300UR120A 300U100A
    Text: International IOR]Rectifier Rectifiers Standard Recovery 250-380 Amps Part Number •F AV @ Vr r m (V) (A) Tc <°C) >FSN (1) SO Hz (A) 60 Hz (A) VFM @ * * 'F(AV) (V) RthJC DC (°C/W) 70U10 70U20 70U40 70U60 70U80 70U100 70U120 100 200 400 600 800 1000 1200


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    PDF 70U10 70U20 70U40 70U60 70U80 70U100 70U120 300U10A 300U20A 300U40A 300U20 R13B 300UR120A 300U100A

    D78058

    Abstract: UPD 74H NEC Electronics uPD Series NEC JAPAN IC D780 78p018fgc 1404EE NEC D780
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD 7 8 P 0 1 8 F A 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The /¿PD78P018F(A) comes under a more severe quality assurance program than the /xPD78P018F (standard grade), so it is classified as special grade in N EC ’s quality grade classification.


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    PDF uPD78P018F /xPD78P018F PD78P018F PD78018F 78K/0 D78058 UPD 74H NEC Electronics uPD Series NEC JAPAN IC D780 78p018fgc 1404EE NEC D780

    Untitled

    Abstract: No abstract text available
    Text: M ic r o c h ip PACKAGE TYPES DEVICE SELECTION TABLE Part Number Vcc Range Max Clock Frequency Temp Ranges 25C320 4.5-5.5V 3 MHz C.I.E PDIP, SOIC C5 C 1 SO c 2 FEATURES WP C 3 • Low power CMOS technology - Write current: 3 mA maximum - Read current: 500 |iA typical


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    PDF 25LC320/25C320 25C320 25LC320 25LC320T 25C320T 7B6-7277 DS21227B-page

    155154

    Abstract: No abstract text available
    Text: uuJ H igh D ynam ic Range Am plifier * * * * * * » 250-3000 M H z Bandwidth 41 dBm O utput IP3 2.8 dB N oise Figure 12 dB Gain 21 dBm P 1dB H igh Reliability SO T-89 Surface M ount Package Frequency Range Gain S ll S22 Output IP3 Noise Figure Output PI dB


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    PDF OT-89. Gai28 155154

    Diode BAY 46

    Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
    Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j


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    PDF 1N456 BAW21A CB-26) CB-127 Tamb100Â Tamb125Â Tamb60Â CB-127 CB-127. Diode BAY 46 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49

    WATKINS JOHNSON

    Abstract: WATKINS JOHNSON amplifier
    Text: uuU GaAs MMIC Amplifier 250-3000 MHz Bandwidth 3 6 dB m O u tp u t IP3 2 .6 dB N oise Figure 13 dB Gain 18 dBm PldB H igh R eliability SO T -89 Surface M oun t Package Frequency The Watkins Johnson A M I is a general purpose gain block that offers good dynamic range in a


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    PDF

    2SB835

    Abstract: 2SB835 R
    Text: 2SB835 2SB835 '> V zi > P N P x 4r'> t * ; u 7 V •^"Jf^/Si P N P Epitaxial Planar Power Amplifier • # » /F e a tu r e s V cE sat VcE(sat) • P S C S i S S t l So M type package suitable for automatic insertion, easier manual inser­ tion, self-standing on PC boad.


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    PDF 2SB835 Ta-25Â 10/iA, 2SB835 2SB835 R

    MIL-C-39012 SMA SPEC

    Abstract: m39012.55-4007 amphenol 74868 amphenol 69 SERIES Amphenol Assembly instructions Amphenol - Assembly instructions Amphenol 349-50114 Amphenol 901-128-11 QQ-S-571 250-36UNS-2B
    Text: REVISIONS 901-128-11 NOTES- REV DRAWING NO. DESCRIPTION 1. ASTER ISK Cm INDICATES C A B LE ENTRY DIM'S OF METAL PA R TS ONLY. 2. CUSTOMER NdTE> WHEN SOLDERING CONTACT TO CABLE. ROSIN CORE SO FT SOLDER PER Q Q -S -571 COMPOSITION Sn6G IS RECOMMENDED. 3. INSULATOR ITEM 2) MUST NOT EXC E ED .003 MAX ABO VE METAL SHOULDER OF BODY <ITEM i>.


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    PDF QQ-S-571 901-5098-3FX 901-5099-3FX 901-5100-1FX 901-5103-GA 901-5774-2FX 901-5708-FX RG-174/U, RG-188/U RG-316/U MIL-C-39012 SMA SPEC m39012.55-4007 amphenol 74868 amphenol 69 SERIES Amphenol Assembly instructions Amphenol - Assembly instructions Amphenol 349-50114 Amphenol 901-128-11 250-36UNS-2B

    rgn 1064

    Abstract: vergleichsliste mo465 telefunken hr 660 tungsram Ubf 11 TK4100 RGN2004 Telefunken g-2504 Telefunken ebf 11
    Text: ' RÖHRENDATEN für Schule u, Werkstatt y ^ 1. VergleichstabeSIe F 2, Austauschliste Ausgabe 1928— 1945 . ' *en W ü n schen v ie le r Interessenten, en tsp rech en d , bringen w ir mit n ach fo lg e n d e r A ufstellung eine Vergleichsliste d e r e u ro p äisch en Röhren so w ie eine Austaüschrtste* die


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    PDF

    M3911

    Abstract: AWG826 molex 5578 series molex mxj 500 SD-5320-NB
    Text: 5 3 4 2 NOTES 1. M A TER IA L HOUSING TERM INAL CONTACT AREA : G .F . 15Z. P B T P U L9 4 V -0 : PHOSPHOR BRONZE 2. FOR USE WITH AWG*26 & * 2 8 STRANDED WIRE (C O N SISTS OF 7 CONDUCTORS) 2.95REF, AND *2 8 SO LID W IRE. 1.14(.045) D IA. MAX. IN SU LA TIO N RIBBON C A B LE WITH


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    PDF 95REF, UL94V-0) AWG826 SD-5320-NB M3911 AWG826 molex 5578 series molex mxj 500