SO 237 TRANSISTOR Search Results

BD233

Abstract: BD237-10 BD235 BD237
Contextual Info: TO-126 Plastic-Encapsulate Transistors^ BD233/235/237 TRANSISTOR NPN FEATURES - . . . A . Power dissipation Pcm: T O -1 2 6 1.25 W (Tamb=25°C) Æ'J : ^ “lector current 2A Ic m : 1 .E M IT T E R m ^ ^ so e sss^ •base voltage V(BR)cBo: BD233 : 4 5 V 2 .COLLECTOR

tl 134

Abstract: thomson-csf rf power transistor SD1132-4
Contextual Info: S G S -TH O M SO N D 4C D I 715^237 □□□□□31 7 l~ D Y ~ SOLID STATE MICROWAVE ! S D 1132-4 THOMSON-CSF COMPONENTS CORPORATION !•Montgomeryvi lie, PA 18936 » 215J 362-85Q01 TWX 510-661-7299 \ _ ._ ^ ^ L ■ 470 MHz, 7.5 V POWER TRANSISTOR

tda7374

Abstract: TDA 7374 V ap 7302 b transistor ap 7302 b
Contextual Info: M2E 7=12^237 » Q03bb42 s SCS-THOMSON 7 BISÛTH G S - TH OM SO N TDA7374 ¡y ~ 7 # -0 S -0 \ DUAL BRIDGE AUDIO AMPLIFIER FOR CAR RADIO ' ; ADVANCE DATA • MINIMUM EXTERNAL COMPONENT COUNT ■ NO BOOTSTRAP CAPACITORS a NO BOUCHEROT CELLS ■ CLIP DETECTOR OUTPUT

Contextual Info: 3GE D • 7^237 0031103 T ■ “T'-'SS'il rrr scs-th o m so n _ 7 # o ^ H tH M M Q S _ 2 N 3 7 2 5 S 6 S-TH0MS0N HIGH VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high cur­

118-136 mhz

Abstract: sd1222-6 transistor rf vhf
Contextual Info: S G S'•TH O M SO N QSC I 7=1^237 D G Q G 17E 3 SOLID STATE MICROWAVE SD1222-6 JHOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 15 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD 1222-6 is an epitaxial silicon NPN-planar transistor

BC 2388

Abstract: BC739 BC236 BC237B 239b BC237A BC231 bc2376 06008v BC238
Contextual Info: ^ BC237 BC238 BC239 OßtCf MAXIMUM RATINGS R*l»r»V Symbol Collector-Emitter Voltage BC BC BC 237 231 239 Unit v e to 45 25 25 Vdc Collector Emitter Voltage VCfS 50 30 30 Vdc £»ni»t<r-8i*e Voltage v i9 0 6 0 SO 5.0 Vdc Collector Current - Continuous 100

BC478

Abstract: BC479 BC477 BC478-BC479 bc477 BC478 BC479
Contextual Info: - 3DE » • 7^5^237 □ D 3 Ü CI 1 3 H m I ^ T ’^ f - r o i _1 SG S -TH O M SO N MMlI [I[Li ïï[RMO©S G S BC477 B C478-BC479 S-THOMSON LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS D E S C R IP T IO N The BC477, BC478 and BC479 are silicon planar

sef730

Abstract: 8a22a
Contextual Info: S G S-THOMSON Û7E D g 7^2^237 . 0 7 » 3<%- 1 J 7 3 C .1 7 5 4 2 a u HIGH SP EED SW IT C H IN G A P P L IC A T IO N S A B SO L U T E M A X IM U M R A T IN G S V qs ^DGR V qs •d m ! * P,o, ^stg T| Drain-source voltage VGS = 0) Drain-gate voltage (RGS = 2 0 K O )

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

D234

Abstract: D233 D-234 BD233 CDIL BD238 BD234 BD235 BD236 BD237 BD238
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer BD233, BD235, BD237 BD234, BD236, BD238 TO-126 SOT-32 Plastic Package BD233, 235, 237 BD234, 236, 238 NPN PLASTIC POWER TRANSISTORS

Contextual Info: Ï. 5 SGS-THOMSON A M 8 2 7 3 1 -0 0 6 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T IMPEDANCE MATCHING OVERLAY G EOM ETRY M ETAL/CERAMIC HERM ETIC PACKAGE

Contextual Info: S G S -1 H 0 M S 0 N D t g lÄ H lC T M O ig l A M 12 1 4 -2 0 0 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

TO126

Abstract: CDIL BD238 BD233 BD234 BD238 BD235 BD236 BD237 bd 238 P BD238 continental
Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS BD 233, 235, 237 BD 234, 236, 238 TO126 Plastic Package EC B Medium Power Liner and Switching Applications

Contextual Info: G 7 S C S - T H O M S O N A T /. HigMilLlgTOMOtgl_ AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS • REFRACTORY/GOLD METALLIZATION ■ EM ITTER SITE BALLASTED ■ 3:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ IN PU T/O U TPU T MATCHING

STH7NA80FI

Abstract: STH7NA80
Contextual Info: STH7NA80 STH7NA80FI r z 7 S CS-THOMSON Ä 7# M g l 3l,ÎICT[SÎ(a ffl(gl N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH 7NA80 STH 7NA80FI V dss R o S (on) Id 800 V 800 V < 1.9 n < 1.9 n 6.5 A 4 A TYPIC A L R d s ( o p ) = 1 . 6 8 Q ± 30V G ATE TO SO U R C E VO LTAGE RATING

2SA10150

Abstract: SO-160
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033^4 DGDG1S3 b3b B K D I L - TO-92 PLASTIC PACKAGE TRANSISTORS PNP Maximum Ratings Typ« No. 2SA537 VC80 (V) Un 60 VCEO VEBO (V) (V) Un Un 50 5 Electrical Characteristics 'CBO (UA) VC8

SELECTRO

Contextual Info: SCS-THOMSON lE C T G Ä D tg i M S C 8 0 1 86 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS • EMITTER BALLASTED . CLASS A LINEAR OPERATION . COMMON EMITTER . VSWR CAPABILITY 15:1 @ RATED CONDITIONS . ft 3.2 GHz TYPICAL . NOISE FIGURE 12.5 dB @ 2 GHz

welding equipment smps schematic

Contextual Info: rZ Ä Z S G S -1 H 0 M S 0 N 7 # M D C H O iL ie T IS iS fflD e S S T E 1 1 0 N A 2 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TY P E V dss S T E 1 10NA20 • . . . . . . . . 200 V RDS on < 0 .0 19 Id a 110 A TYPICAL FtDS(on)= 0.015 £i

TRANSISTOR BC 213

Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

Contextual Info: SGS-THOMSON A M 1 2 1 4 -3 2 5 m RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P o u t = 325 W MIN. WITH 6.4 dB GAIN

2N5643

Abstract: 605Z OB65
Contextual Info: SGS-1H0MS0N ¡UKgTMDiS SD1224 2N5643 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS . 175 MHz . 28 VOLTS > CLASS C . COMMON EMITTER . EFFICIENCY 60% MIN • P out = 40 W MIN. WITH 7.6 dB GAIN .380 4L STUD (M135) epoxy sealed ORDER CODE BRANDING SD1224 2N5643

Contextual Info: 5 S C S -T H O M S O N iH[ Î. SD4013 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS P RE LIM IN A R Y DATA REFRACTORY/GOLD METALLIZATION INTERNAL INPUT MATCHING METAL/CERAMIC PACKAGE EMITTER BALLASTED 20:1 VSWR CAPABILITY Pout = 25 W MIN. WITH 9 dB GAIN

sgs RF NPN POWER TRANSISTOR 3 GHZ

Abstract: m1416 AM1416-100 M14-16
Contextual Info: r= 7 S G S - T H O M S O N ^ 7#. M ia© g[L i@ T M []igS _ A M 1 4 1 6 -1 0 0 RF & MICROWAVE TRANSISTORS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED i LOW THERMAL RESISTANCE • INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY

Contextual Info: rz 7 ^ 7# SGS-THOMSON [«o @iiLEeiris®mei S TB 5 N A 50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB5NA50 V dss R dS od Id 500 V < 1.6 n 5 A TYPICAL R d s (o ii) = 1 .2 £1 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C