A4t transistor
Abstract: A09T transistor A4t 5343B transistor A09t A6T TRANSISTOR A6F diode transistor A4t 46 transistor A9t AI203
Text: Main Features • • • • • • • • • • • • 10-bit Resolution 1.2 Gsps Guaranteed Conversion Rate, 1.4 Gsps Typical 4:1 Integrated Parallel MUX PECL/LVDS Differential Data and Clock Inputs 2 Vpp Differential Analog Output Swing Output Impedance: 50Ω Single-ended, 100Ω Differential
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10-bit
10-bit
TSEV86101G2BGL
TS86101G2B
5343B
A4t transistor
A09T
transistor A4t
transistor A09t
A6T TRANSISTOR
A6F diode
transistor A4t 46
transistor A9t
AI203
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transistor A09t
Abstract: A09T C7f TRANSISTOR transistor A4t 46 transistor A4t 45 DIODE ga
Text: TS86101G2B 4:1 10-bit 1.2 Gsps MUXDAC Datasheet Main Features • • • • • • • • • • • • 10-bit Resolution 1.2 Gsps Guaranteed Conversion Rate, 1.4 Gsps Typical 4:1 Integrated Parallel MUX PECL/LVDS Differential Data and Clock Inputs 2 Vpp Differential Analog Output Swing
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TS86101G2B
10-bit
TSEV86101G2BGL
0992D
transistor A09t
A09T
C7f TRANSISTOR
transistor A4t 46
transistor A4t 45
DIODE ga
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A09T
Abstract: transistor A09t transistor A6t 75 C7f TRANSISTOR transistor A9t DIODE ga C6f TRANSISTOR A09F transistor A4t 85 D9F SRAM
Text: Main Features • • • • • • • • • • • 10-bit Resolution 1.2 Gsps Guaranteed Conversion Rate, 1.4 Gsps Typical 4:1 Integrated Parallel MUX PECL/LVDS Differential Data and Clock Inputs 2 Vpp Differential Analog Output Swing Output Impedance: 50Ω Single-ended, 100Ω Differential
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10-bit
TSEV86101G2BGL
A09T
transistor A09t
transistor A6t 75
C7f TRANSISTOR
transistor A9t
DIODE ga
C6f TRANSISTOR
A09F
transistor A4t 85
D9F SRAM
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A09t
Abstract: transistor A4t 46 transistor A09t diode A5F C7f TRANSISTOR TS86101G2B AI203 MC100EP17 NBSG16 TS86101G2BCGL
Text: Main Features • • • • • • • • • • • • 10-bit Resolution 1.2 Gsps Guaranteed Conversion Rate, 1.4 Gsps Typical 4:1 Integrated Parallel MUX PECL/LVDS Differential Data and Clock Inputs 2 Vpp Differential Analog Output Swing Output Impedance: 50Ω Single-ended, 100Ω Differential
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10-bit
TSEV86101G2BGL
10-bit
5343C
A09t
transistor A4t 46
transistor A09t
diode A5F
C7f TRANSISTOR
TS86101G2B
AI203
MC100EP17
NBSG16
TS86101G2BCGL
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Untitled
Abstract: No abstract text available
Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 69% space savings vs. FPBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm
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W3H32M72E-XSB2X
W3H32M72E-XSB2XF
256MB
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Untitled
Abstract: No abstract text available
Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 69% space savings vs. FPBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm
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W3H32M72E-XSB2X
W3H32M72E-XSB2XF
256MB
with11,
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Untitled
Abstract: No abstract text available
Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 69% space savings vs. FPBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm
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W3H32M72E-XSB2X
W3H32M72E-XSB2XF
256MB
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Untitled
Abstract: No abstract text available
Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 69% space savings vs. FPBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm
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W3H32M72E-XSB2X
W3H32M72E-XSB2XF
256MB
W3H64M72E-XSBXF
SN63Pb37
SAC305
256MB"
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Untitled
Abstract: No abstract text available
Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 69% space savings vs. FPBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm
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W3H32M72E-XSB2X
W3H32M72E-XSB2XF
256MB
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Untitled
Abstract: No abstract text available
Text: W3H64M72E-XSBX W3H64M72E-XSBXF 512MB – 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 Mb/s 30% Space saving vs. FBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm
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W3H64M72E-XSBX
W3H64M72E-XSBXF
512MB
667Mbs
533Mbs
400Mbs
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Untitled
Abstract: No abstract text available
Text: W3H64M72E-XSBX W3H64M72E-XSBXF 512MB – 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 Mb/s 30% Space saving vs. FBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm
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W3H64M72E-XSBX
W3H64M72E-XSBXF
512MB
667Mbs
533Mbs
400Mbs
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W3E32M64S-XBX
Abstract: No abstract text available
Text: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES DDR SDRAM rate = 200, 250, 266, 333Mb/s 41% SPACE SAVINGS vs. TSOP Package: Reduced part count • Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,
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W3E32M64S-XBX
32Mx64
333Mb/s
625mm2
256MByte
333Mbs
W3E32M64S-XBX
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16M x 16 DDR TSOP-66
Abstract: No abstract text available
Text: White Electronic Designs W3E32M64SA-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES DDR SDRAM rate = 200, 250, 266, 333Mb/s 41% SPACE SAVINGS vs. TSOP Package: Reduced part count • Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,
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32Mx64
333Mb/s
625mm2
W3E32M64SA-XBX
datHz/266Mbs
166MHz/333Mbs
16M x 16 DDR TSOP-66
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W3E16M64S-XBX
Abstract: W3E32M64S-XBX
Text: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333Mb/s 41% SPACE SAVINGS vs. TSOP Package: Reduced part count • Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,
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W3E32M64S-XBX
32Mx64
333Mb/s
625mm2
256MByte
333Mbs
W3E16M64S-XBX
W3E32M64S-XBX
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Untitled
Abstract: No abstract text available
Text: W3E32M64S-XBX 32Mx64 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333Mb/s* 41% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25mm x 25mm, 625mm2 Reduced trace lengths for lower parasitic capacitance
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W3E32M64S-XBX
32Mx64
333Mb/s*
625mm2
256MByte
333Mbs,
333Mbs
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Sn63pB37 tds
Abstract: W3E32M64S-XSBX TSOP66
Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES DDR SDRAM rate = 200, 250, 266, 333* Package: BENEFITS • 208 Plastic Ball Grid Array PBGA , 13 x 22mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#)
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W3E32M64S-XSBX
32Mx64
Sn63pB37 tds
W3E32M64S-XSBX
TSOP66
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Untitled
Abstract: No abstract text available
Text: W3E32M64S-XB3X 256 – 32Mx64 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* 73% Space Savings vs. FPBGA Package: • 43% Space Savings vs TSOP • 208 Plastic Ball Grid Array PBGA , 13 x 22mm Reduced part count
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W3E32M64S-XB3X
32Mx64
cycle55Â
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Untitled
Abstract: No abstract text available
Text: W3E32M64SA-XBX 32Mx64 DDR SDRAM FEATURES GENERAL DESCRIPTION DDR SDRAM rate = 200, 250, 266, 333Mb/s* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 4 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.
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W3E32M64SA-XBX
32Mx64
333Mb/s*
256MByte
625mm2
256MB
333Mbs,
333Mbs
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W3E32M72SR-XSBX
Abstract: No abstract text available
Text: White Electronic Designs W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Reduced part count Package: 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm
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W3E32M72SR-XSBX
32Mx72
266Mb/s
E32M72SR-XSBX
W3E32M72SR-XSBX
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Untitled
Abstract: No abstract text available
Text: W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Package: 51% I/O reduction vs TSOP Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 25mm
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W3E32M72SR-XSBX
32Mx72
266Mb/s
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TSOP66
Abstract: W3E32M72SR-XSBX
Text: White Electronic Designs W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Reduced part count Package: 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm
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W3E32M72SR-XSBX
32Mx72
266Mb/s
72SR-XSBX
TSOP66
W3E32M72SR-XSBX
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Untitled
Abstract: No abstract text available
Text: W3E32M72SR-XBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Package: 51% I/O reduction vs TSOP Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 25mm
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W3E32M72SR-XBX
32Mx72
266Mb/s
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Untitled
Abstract: No abstract text available
Text: W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* 73% Space Savings vs. FPBGA Package: • 43% Space Savings vs TSOP • 208 Plastic Ball Grid Array PBGA , 13 x 22mm Reduced part count 2.5V ±0.2V core power supply
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W3E32M64S-XSBX
32Mx64
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
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