SMT TRANSISTOR Search Results

Contextual Info: epitex Opto-Device & Custom LED PHOTO-DIODE PD006-SMT PRELIMINARY Lead Pb Free Product – RoHS Compliant PD006-SMT SMD Type PHOTO-TRANSISTOR PD006-SMT is a surface mount type photo-transistor featuring high photocurrent. This phototransistor consists of a chip with 0.6x0.6mm active area mounted

CQ 4.000 crystal oscillator 4Mhz

Abstract: ztb 421 CQ 13.560 ctx128 ats 4.096 18pf CTX128 diode SE271 ZTB455E CSX750PCC 7213 time base generator ic
Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 16-201 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 202-402 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 403-423

ctx128

Abstract: IC 8021-2 CTX128 diode SE271 CSA 20.00MX ZTT-4.00MG ZTB455E CSX750PCC ECS-327SMO ECS-10-13-1H
Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 14-176 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 177-313 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 314-333

CROSS AVX

Contextual Info: TECHNICAL INFORMATION SMT PROCESS CHARACTERISTICS OF AVX TRANSGUARDS by Ron Demko AVX Corporation Raleigh, NC Abstract: TransGuards are uniquely suited for wide-scale usage in SMT applications. TransGuards exhibit many advantages when used in SMT assemblies.

inspection criteria

Abstract: 202F
Contextual Info: TECHNICAL INFORMATION SMT PROCESS CHARACTERISTICS OF AVX TRANSGUARDS by Ron Demko AVX Corporation Raleigh, NC Abstract: TransGuards are uniquely suited for wide-scale usage in SMT applications. TransGuards exhibit many advantages when used in SMT assemblies.

transistor d-331

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

phototransistor 650 nm

Abstract: phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

phototransistor 650 nm

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two MMBT9015 chips in an SMT package. „

transistor h 331

Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features

transistor d 331

Abstract: D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten

phototransistor 650 nm

Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two chips in a SMT package „ EQUIVALENT CIRCUITS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two Chips in a SMT Package „ EQUIVALENT CIRCUITS

IC TA 7089 equivalent

Abstract: TILT SWITCH RP-SUB-45-000-NR "photo transistor" photo transistor tilts SMT IR LED tilt ic 4510 SMT SUB MIN PC UL94-V0
Contextual Info: Optical Tilt Switch SMT Tilt Angle: 15˚, 30˚ & 45˚ for SMT Vertical Mount PCB Materials & Specifications 1. Housing: Glass-filled Polyamide, UL94-V0 2. Photo Trans: Silicon Photo Transistor 3. Base: Glass-filled Polyamide, UL94-V0 4. Tilt Angle Housing: Copper alloy, Nickel plated

NPN CBO 40V CEO 25V EBO 5V

Abstract: MMST8598
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.

sot23 marking code 8pf

Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V

Tr 2SA1576

Abstract: 2SC4649 2sb1051
Contextual Info: Tr T ransistürs • EM3, UMT, SMT SOT-23, SC-59 Type Type UM T — — 2SA1037KLN — — 2SA1455K — — 2SC2412KLN — — 2SC3722K 2SA1774 — 2SC4617 Vi I :)(V) •V,.^ Function EM3 SMT Low Noise lr (mA) Pc(mW)(Ta = 25"C) UMT, SMT EM3 hff V ce(V) Ir(mA)

marking r2k

Abstract: marking r1c GAJ SOT23 R1P SOT-223
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.

rohm diode dpak soldering

Abstract: PCIM 186 Motorola smps HALF BRIDGE tAN philips smd electrolytic 5Bp smd transistor data Toko 10mm Film dielectric trimmers Philips philips mepcopal mepcopal capacitor so16 thinfilm resistor
Contextual Info: AN OVERVIEW OF SURFACE MOUNT TECHNOLOGY SMT FOR POWER SUPPLY APPLICATIONS Written by: Sam Davis, PCIM Dave Hollander, Motorola Semiconductor Reprinted from HFPC, May, 1993 Proceedings Reprinted with permission from Intertec International, Inc. An Overview of Surface Mount Technology (SMT)

univision technology

Abstract: Ka-Band MMIC Mixer MICROWAVE ASSOCIATES RF SPDT switch Microwave power GaAs FET data HMC220MS8 ka-band mixer HMC143 HMC259 HMC264CB1 HMC267QS16G
Contextual Info: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION JUNE 1999 Ball Grid Array SMT mmWave Products INSIDE. *12 NEW PRODUCTS RELEASED! Designers of millimeter and microwave radios now have access to advanced MMICs in a rugged SMT packaged format. Hittite Microwave has

UMT3N

Abstract: T108 T109 T110
Contextual Info: UMT3N/IMT3A h ÿ > v 7s £ /Transistors UMT3N IMT3A 7 4 V U -— T “ y K -X — K x / W X Isolated Mini-Mold Device -JK 'J'ft^Jlfifll/G eneral Small Signal Amp. • W fiv fîi ¡2/Dimensions Unit : mm 1) UMT (SC-70), SMT (SC-59) t i L'«o 2) UMT, SMT CDÉ

fototransistor

Abstract: en 60721-3-3 9201 SFH 9201
Contextual Info: Reflexlichtschranke im SMT-Gehäuse Reflective Interrupter in SMT Package SFH 9201 Wesentliche Merkmale • Optimaler Arbeitsabstand 1 mm bis 5 mm • IR-GaAs-Lumineszenzdiode: Sender • Si-NPN-Fototransistor: Empfänger • Tageslichtsperrfilter • Hoher Kollektor-Emitter-Strom typ. 0.7 mA