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    2SJ587

    Abstract: DSA003749 Hitachi 2SJ
    Text: 2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 Z 1st.Edition. June 1999 Features • Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA) • 2.5 V gate drive device. • Small package (SMPAK)


    Original     		PDF 2SJ587 ADE-208-801 2SJ587 DSA003749 Hitachi 2SJ

    2SC5139

    Abstract: DSA003728
    Text: 2SC5139 Silicon NPN Epitaxial ADE-208-226 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter


    Original     		PDF 2SC5139 ADE-208-226 2SC5139 DSA003728

    Hitachi DSA0076

    Abstract: 2SC5138
    Text: 2SC5138 Silicon NPN Epitaxial ADE-208-225A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline SMPAK


    Original     		PDF 2SC5138 ADE-208-225A Hitachi DSA0076 2SC5138

    ZO 109

    Abstract: zo 103 ma 2SC5247 transistor ECG 332 Hitachi DSA00398
    Text: 2SC5247 Silicon NPN Epitaxial ADE-208-281 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter


    Original     		PDF 2SC5247 ADE-208-281 ZO 109 zo 103 ma 2SC5247 transistor ECG 332 Hitachi DSA00398

    2SC5138

    Abstract: Hitachi DSA0014
    Text: 2SC5138 Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifier SMPAK Features • High gain bandwidth product fT = 6 GHz typ. • High gain, low noise figure PG = 13 dB typ., NF = 1.8 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector


    Original     		PDF 2SC5138 2SC5138 Hitachi DSA0014

    2SA2083

    Abstract: 2SA20 Hitachi DSA00517
    Text: 2SA2083 Silicon PNP Epitaxial ADE-208-1478 Z Rev.0 Feb. 2002 Features • Low frequency amplifier Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA2083 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –55


    Original     		PDF 2SA2083 ADE-208-1478 D-85622 D-85619 2SA2083 2SA20 Hitachi DSA00517

    Hitachi DSA0076

    Abstract: 2SC5136
    Text: 2SC5136 Silicon NPN Epitaxial ADE-208-223A Z 2nd. Edition Mar. 2001 Application VHF/UHF wide band amplifier Features • High gain bandwidth product fT = 3.8 GHz typ • High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK


    Original     		PDF 2SC5136 ADE-208-223A Hitachi DSA0076 2SC5136

    Hitachi DSA0076

    Abstract: 2SC5140
    Text: 2SC5140 Silicon NPN Epitaxial ADE-208-227A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK


    Original     		PDF 2SC5140 ADE-208-227A Hitachi DSA0076 2SC5140

    2SC5141

    Abstract: 2SC5218 Hitachi DSA0014
    Text: 2SC5141 Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifier SMPAK Features • High gain bandwidth product fT = 5.8 GHz typ. • High gain, low noise figure PG = 13 dB typ., NF = 1.6 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector


    Original     		PDF 2SC5141 2SC5141 2SC5218 Hitachi DSA0014

    ZO 109

    Abstract: zo 107 2SC5247 Hitachi DSA0014
    Text: 2SC5247 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ. • High gain, low noise figure PG = 17 dB typ., NF = 1.2 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector


    Original     		PDF 2SC5247 ZO 109 zo 107 2SC5247 Hitachi DSA0014

    2SC5139

    Abstract: Hitachi DSA0014
    Text: 2SC5139 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz typ. • High gain, low noise figure PG = 15 dB typ., NF = 1.1 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector


    Original     		PDF 2SC5139 2SC5139 Hitachi DSA0014

    2SC5137

    Abstract: Hitachi DSA00395
    Text: 2SC5137 Silicon NPN Epitaxial ADE-208-224 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter


    Original     		PDF 2SC5137 ADE-208-224 2SC5137 Hitachi DSA00395

    H5N0301SM

    Abstract: DSA003645
    Text: H5N0301SM Silicon N Channel Power MOS FET Power Switching ADE-208-954 Z 1st. Edition Dec. 2000 Features • • • • Low on-resistance Low drive current High density mounting 2.5 V gate drive device Outline SMPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S


    Original     		PDF H5N0301SM ADE-208-954 H5N0301SM DSA003645

    2SC5136

    Abstract: Hitachi DSA00234
    Text: 2SC5136 Silicon NPN Epitaxial ADE-208-223 1st. Edition Application VHF/UHF wide band amplifier Features • High gain bandwidth product fT = 3.8 GHz typ • High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter


    Original     		PDF 2SC5136 ADE-208-223 2SC5136 Hitachi DSA00234

    Hitachi 2SJ

    Abstract: Hitachi DSA002752
    Text: 2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 Z 1st.Edition. June 1999 Features • • • Low on-resistance RDS = 8.5 Ω typ. (VGS = -4 V , ID = -25 mA) RDS = 15 typ. (VGS = -2.5 V , ID = -10 mA) 2.5 V gate drive device. Small package (SMPAK)


    Original     		PDF 2SJ587 ADE-208-801 2SJ587 Hitachi 2SJ Hitachi DSA002752

    2SC5136

    Abstract: Hitachi DSA0014
    Text: 2SC5136 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 3.8 GHz typ. • High gain, low noise figure PG = 11 dB typ., NF = 2.5 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector


    Original     		PDF 2SC5136 2SC5136 Hitachi DSA0014

    Untitled

    Abstract: No abstract text available
    Text: H ITACH I 2SC5141-Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifier SMPAK Features • High gain bandwidth product fT = 5.8 GHz typ. • High gain, low noise figure P G = 13 dB typ., NF = 1.6 dB typ. at f = 900 MHz 1. Emitter


    OCR Scan     		PDF 2SC5141------Silicon 2SC5141

    Untitled

    Abstract: No abstract text available
    Text: H ITACHI 2SC5136-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fp = 3.8 GHz typ. • High gain, low noise figure PG = 11 dB typ., N F = 2.5 dB typ. at f = 9 00 MHz 1. Emitter


    OCR Scan     		PDF 2SC5136------Silicon 2SC5136

    zo 103 ma

    Abstract: No abstract text available
    Text: HITACHI 2SC5246-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j = 12 GHz typ. • High gain, low noise figure P G = 16.5 dB typ., NF = 1.6 dB typ. at f = 900 MHz * 1. Emitter


    OCR Scan     		PDF 2SC5246------Silicon ap-171 2SC5246 zo 103 ma

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC3957 S IL IC O N NPN P IA N A R H IG H G A iN A M P L IF IE R »4 3 SU« r i ’f s 'I>ì^<a«wv* íí^ í SMPAK-4 1 ABSOLUTE MAXIMUM RATINGS MAXIMUM COLLECTOR DISSIPATION CURVE 2SC.W57 Symbol lliin <’u.:c<.!i>r to h c 1 igc CoCctîor to Unit


    OCR Scan     		PDF 2SC3957 100mA.

    Untitled

    Abstract: No abstract text available
    Text: 2SC5139 Silicon N PN Epitaxial HITACHI Application V H F / U H F w ide band am plifier Features • H igh gain bandw idth product fT = 11 G H z typ • H igh gain, low noise figure PG = 15 dB typ, N F = 1.1 dB typ at f = 9 0 0 M H z Outline SMPAK 1. Emitter


    OCR Scan     		PDF 2SC5139 ADE-208-226

    code Transistor ya

    Abstract: MARKING CODE YA TRANSISTOR
    Text: HITACHI 2SC5137-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j - 10 GHz typ. • High gain, low noise figure PG = 16.5 dB typ., NF = 1.5 dB typ. at f = 900 MHz 1. Emitter 2. Base


    OCR Scan     		PDF 2SC5137------Silicon 2SC5137 code Transistor ya MARKING CODE YA TRANSISTOR

    208224 HZ

    Abstract: No abstract text available
    Text: 2SC5137 Silicon NPN Epitaxial HITACHI Application V H F / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline SMPAK 1. Emitter 2. B ase 3. Collector


    OCR Scan     		PDF 2SC5137 ADE-208-224 208224 HZ

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC5139-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f-p = 11 GHz typ. • High gain, low noise figure PG = 15 dB typ., NF = 1.1 dB typ. at f = 900 MHz 1. Emitter 2. Base


    OCR Scan     		PDF 2SC5139------Silicon 2SC5139