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    SMN630L

    Abstract: No abstract text available
    Text: SMN630LD Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=12nC (Typ.)  Low drain-source On-Resistance: RDS(on)=0.34Ω (Typ.)  100% avalanche tested  RoHS compliant device


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    PDF SMN630LD SMN630L O-252 13-AUG-14 KSD-T6O052-000 SMN630L