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    SME6G10US60 IGBT Search Results

    SME6G10US60 IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SME6G10US60 IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SME6G10US60 IGBT

    Abstract: igbt 300V 10A datasheet SME6G10US60
    Text: Preliminary SME6G10US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low Conduction Loss : VCE sat = 2.1 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS * General Purpose Inverters * UPS, CVCF * Robotics , Servo Controls


    Original     		PDF SME6G10US60 17-PM-BA SME6G10US60 IGBT igbt 300V 10A datasheet SME6G10US60

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SME6G10US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low Conduction Loss : VCE sat = 2.1 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS * * * * General Purpose Inverters UPS, CVCF


    OCR Scan     		PDF SME6G10US60 17-PM-BA

    SME6G10US60

    Abstract: No abstract text available
    Text: Preliminary SME6G10US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low Conduction Loss : VCE sat = 2.1 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS atTc=100°C APPLICATIONS * * * * Package code : 17-PM-BA General Purpose Inverters


    OCR Scan     		PDF SME6G10US60 17-PM-BA SME6G10US60

    SME6G10US60

    Abstract: SME6G10US60 IGBT
    Text: Prelim inary SME6G10US60 C O M P A C T IG B T M O D U L E FE A TU R ES * High Speed Switching * Low Conduction Loss : V CE sat = 2.1 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS at Tc=100°C A P P LIC A TIO N S * * * * Package code : 17-PM-BA


    OCR Scan     		PDF SME6G10US60 17-PM-BA SME6G10US60 SME6G10US60 IGBT