SME63VB471M12X25 Search Results

marking WB4

Abstract: NIPPON CHEMI nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

A113

Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

845 motherboard circuit

Abstract: MRF377 0603HC-10NXJB Coilcraft Rogers 3006 MRF377R3 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5
Contextual Info: MOTOROLA Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

500w power amplifier circuit diagram

Abstract: 500w audio amplifier circuit diagram schematic diagram inverter 500w USING MOSFET 500w audio amplifier circuit diagram layout down Audio Power Amplifier MOSFET TOSHIBA schematic diagram PWM inverter 500w schematic PWM inverter 500w C18 ph zener 100w audio amplifier circuit diagram class D 350w power amplifier stereo
Contextual Info: REFERENCE DESIGN IRAUDAMP1 revB International Rectifier • 233 Kansas Street, El Segundo, CA 90245 z USA High Power Class D Audio Power Amplifier using IR2011S IRAUDAMP1 revB High Power Class D Audio Power Amplifier using IR2011S Features - Complete Analog Input Class D Audio Power Amplifier

2DS1047

Abstract: nippon capacitors Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 7, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications

Contextual Info: Document Number: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

United Chemi-Con SME series

Abstract: UNITED CHEMI-CON SME SME CHEMI-CON SME series SME50VB1R0M5X11LL SME CAPACITOR United CHEMI-CON
Contextual Info: SME Series Ⅲ The SME series capacitors are our standard general purpose capacitors. These radial lead capacitors are available in a wide range of voltage and capacitance ratings and are designed for a load life of 2,000 hours at 85؇C with an operating temperature range of ‫؁‬40؇C to ‫؀‬85؇C.

SME Series

Abstract: United Chemi-Con SME series UNITED CHEMI-CON SME SME 63 VB 220 M sme50Vb33 chemicon sme SME50VB10RM5X11LL SME25VB102M12X20LL
Contextual Info: SME Series Ⅲ The SME series capacitors are our standard general purpose capacitors. These radial lead capacitors are available in a wide range of voltage and capacitance ratings and are designed for a load life of 2,000 hours at 85؇C with an operating temperature range of ‫؁‬40؇C to ‫؀‬85؇C.

AN1955

Abstract: MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR
Contextual Info: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this

MRF377HR3

Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF377

Abstract: 845 motherboard circuit 0805J resistor kyocera 845 motherboard dvbt nippon capacitors 2508051107Y0 datasheet dvbt transmitter Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

465B

Abstract: A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 Nippon capacitors Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications

transistor amplifier 1ghz 1400 watts

Abstract: nippon capacitors 0603HC-10NXJB Nippon chemi
Contextual Info: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

nippon capacitors

Abstract: dvbt transmitter j564 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF9135LR3

Abstract: MARKING WB1 MRF9135L MRF9135LSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 8, 5/2006 RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier

MRF5S9070NR1

Abstract: marking us capacitor pf l1 A113 A114 A115 AN1955 C101 JESD22 crcw12065603f100 MRF5S9070MR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9070MR1 Rev. 5, 5/2006 Replaced by MRF5S9070NR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

ph c18 zener diode

Abstract: 500w audio amplifier circuit diagram ph c24 zener diode C18 ph zener zener diode c27 ph IRS20124 mosfet based power inverter project 500w power amplifier stereo IRS20124 AN 46F4081
Contextual Info: IRAUDAMP1 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 ! USA High Power Class D Audio Power Amplifier using IR2011S www.irf.com 1 IRAUDAMP1 High Power Class D Audio Power Amplifier using IR2011S Features - Complete Analog Input Class D Audio Power Amplifier

Contextual Info: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this

MRF5S9070N

Abstract: 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

845 motherboard circuit

Abstract: DS1046 NIPPON CAPACITORS 470-860 mhz Power amplifier w 470-860 mhz Power amplifier 5 w Nippon chemi 845 motherboard
Contextual Info: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this