SMD TRANSISTOR S1 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

equivalent ZO 607

Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
Contextual Info: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872

702 transistor smd code

Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
Contextual Info: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872

Contextual Info: DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

Contextual Info: DISCRETE SEMICONDUCTORS DAT BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

BLT81

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC08b 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation

358 SMD transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

4894

Abstract: SMD ic catalogue BLT80 KM10 4312 020 36640
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

2222 730

Abstract: BLT81
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

CDFP4-F16

Abstract: ISL73096RHVF "top mark" intersil 5962F0721801V9A ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor
Contextual Info: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet March 23, 2009 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays FN6475.2 Features • Electrically Screened to SMD # 5962-07218 The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The

Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1

BFS17

Abstract: BFS17R BFS17W BFS17 E1
Contextual Info: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280

BFS17

Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

Contextual Info: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic

702 TRANSISTOR smd SOT23

Abstract: 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718
Contextual Info: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case

70.2 marking smd npn Transistor

Abstract: SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23
Contextual Info: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case

SDV1005E

Abstract: V5R5
Contextual Info: Multilayer Chip Varistor – SDV Series Operating Temp. : -55℃~+125℃ FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time <0.5ns Excellent solderability (Ni, Sn plating) ● ● ● APPLICATIONS Transient voltage protection for IC and transistor

1.B smd transistor

Contextual Info: BFR460L3 NPN Silicon RF Transistor Preliminary data • For low voltage / low current applications 3 • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 1 • World's smallest SMD leadless package 2 • Excellent ESD performance

Contextual Info: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

TRANSISTOR SMD MARKING CODE 1v

Contextual Info: BFR460L3 NPN Silicon RF Transistor* • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers 3 1 • Low noise figure: 1.1 dB at 1.8 GHz 2 • SMD leadless package • Excellent ESD performance typical value > 1500V HBM

Contextual Info: BFR460L3 NPN Silicon RF Transistor* • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers 3 • Low noise figure: 1.1 dB at 1.8 GHz 1 2 • SMD leadless package • Excellent ESD performance typical value 1500V HBM

TSSOP-6

Abstract: marking 34 TSSOP6 NXP smd marking Yd
Contextual Info: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 18 April 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET