SMD TRANSISTOR PD8 Search Results

NV SMD TRANSISTOR

Abstract: AN1294 UHF rfid reader ma706
Contextual Info: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■

Contextual Info: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz

PD85015-E

Abstract: PD85015 PD85015s-e AN1294 JESD97 J-STD-020B PowerSO-10RF
Contextual Info: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■

PD85015s-e

Abstract: PD85015 AN1294 PD85015-E
Contextual Info: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection

Contextual Info: PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package

Contextual Info: PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection

PD84010-E

Abstract: AN1294 JESD97 J-STD-020B
Contextual Info: PD84010-E PD84010S-E RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10W with 14.3dB gain @ 870MHz / 7.5V ■ Plastic package ■ ESD protection

NV SMD TRANSISTOR

Abstract: PD85035-E PD85035 PD85035S PD85035S-E AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E
Contextual Info: PD85035-E PD85035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 14.9dB gain @ 870MHz / 13.6V ■ Plastic package

smd Transistor 1117

Abstract: PD85050S smd Transistor 1116 J0363
Contextual Info: PD85050S RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet −preliminary data Features • Operating frequencies from 1 MHz to 1000 MHz ■ POUT > 50W with 12dB gain @ 870 MHz / 13.6V ■ Unmatched device for wideband operation

Contextual Info: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package

Contextual Info: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection

Contextual Info: PD85025-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection

Contextual Info: PD85025-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection

PD85035S-E

Abstract: PD85035 transistor SMD 12W PD85035-E PD85035S AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E
Contextual Info: PD85035-E PD85035S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■

PD85025s-e

Abstract: NV SMD TRANSISTOR PD85025 PD85025S AN1294 JESD97 J-STD-020B PD85025-E
Contextual Info: PD85025-E PD85025S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25W with 15.7dB gain @ 870MHz / 13.6V ■ Plastic package

AN1294

Abstract: J-STD-020B PD85035-E PD85035S-E PD85035STR-E PD85035TR-E PD85035
Contextual Info: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection

Contextual Info: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package ■ ESD protection

smd transistor 12W 13

Abstract: AN1294 JESD97 J-STD-020B PD84008-E
Contextual Info: PD84008-E PD84008S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V ■ Plastic package

Contextual Info: PD84008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V ■ Plastic package

PD85006

Abstract: PD85006-E AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208
Contextual Info: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package

PD85006

Abstract: PD85006-E 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J
Contextual Info: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package

SMD MARKING GP TRANSISTOR

Abstract: J-STD-020B PD84008L-E st 84008
Contextual Info: RefTitle1 PD84008L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V ■ Plastic package ■ ESD protection

JESD97

Abstract: J-STD-020B PD84008L-E st 84008
Contextual Info: PD84008L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V ■ Plastic package

Contextual Info: PD84008L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V ■ Plastic package