MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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MARKING CODE SMD IC
Abstract: PMBTA45 PBHV9050T smd transistor LL sot23
Text: PBHV9050T 500 V, 150 mA PNP high-voltage low VCEsat BISS transistor Rev. 01 — 16 September 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9050T
O-236AB)
PMBTA45.
AEC-Q101
PBHV9050T
MARKING CODE SMD IC
PMBTA45
smd transistor LL sot23
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SOT-89 transistor marking LM
Abstract: smd transistor marking Lk smd transistor marking LL marking 10 sot-89 smd transistor LL 2SD1000
Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1000 Features World standard miniature package:SOT-89. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage
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2SD1000
OT-89.
SOT-89 transistor marking LM
smd transistor marking Lk
smd transistor marking LL
marking 10 sot-89
smd transistor LL
2SD1000
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smd zener diode 5v
Abstract: Zener diode smd marking 22 Zener diode smd marking 36 smd transistor marking 36 transistor smd P.D 1 zener smd marking GI TRANSISTOR SMD 04 k 1 SMD Transistor diode smd marking 22 SMD TRANSISTOR High Voltage Transistor
Text: Transistors SMD Type Digital Transistors DTDG23YP Features NPN Epitaxial Planar Silicon Transistor with built-in resistors and zener diode . High DC Current Gain. Built-in Zener Diode Gives Strong Protection Against Reverse Surge By L-load (an inductive load).
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DTDG23YP
40x40x0
100mA
500mA/5mA
500mA
30MHz
smd zener diode 5v
Zener diode smd marking 22
Zener diode smd marking 36
smd transistor marking 36
transistor smd P.D 1
zener smd marking GI
TRANSISTOR SMD 04
k 1 SMD Transistor
diode smd marking 22
SMD TRANSISTOR High Voltage Transistor
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification DTDG23YP Features NPN Epitaxial Planar Silicon Transistor with built-in resistors and zener diode . High DC Current Gain. Built-in Zener Diode Gives Strong Protection Against Reverse Surge By L-load (an inductive load). Absolute Maximum Ratings Ta = 25
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DTDG23YP
40x40x0
500mA
30MHz
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Untitled
Abstract: No abstract text available
Text: Diodes IC Transistors Transistor T SMD Type Product specification KTC4075 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Collector Current: IC=150mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=100mW 0.4 3 2 +0.1 0.95-0.1
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KTC4075
OT-23
150mA
100mW
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4075 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Collector Current: IC=150mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=100mW 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1
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KTC4075
OT-23
150mA
100mW
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smd transistor LY
Abstract: lg smd transistor smd transistor marking BL smd transistor MARKING lg smd transistor marking LL smd transistor LL smd transistor NF smd marking ly smd Transistor LG smd marking LG
Text: Transistors SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 700 1 Low noise: NF = 1dB typ. , 10dB (max) 0.55 High hFE: hFE = 70 +0.1 2.4-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)
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2SC2712
OT-23
smd transistor LY
lg smd transistor
smd transistor marking BL
smd transistor MARKING lg
smd transistor marking LL
smd transistor LL
smd transistor NF
smd marking ly
smd Transistor LG
smd marking LG
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transistor smd LC 77
Abstract: D103D smd transistor 2x5 smd transistor ne c2 BLT81 TRANSISTOR SMD catalog smd ic 611 SMD ic catalogue UHF POWER TRANSISTOR SMD Transistor 1c
Text: Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. C DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a
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BLT81
OT223
OT223
711002b
OT223.
transistor smd LC 77
D103D
smd transistor 2x5
smd transistor ne c2
BLT81
TRANSISTOR SMD catalog
smd ic 611
SMD ic catalogue
UHF POWER TRANSISTOR
SMD Transistor 1c
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smd transistor kn
Abstract: PZT3906
Text: •I bbSBTBl OQELDOb 6fl3 H A P X PZT3906 b?E T> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a microminiature SMD envelope SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service.
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PZT3906
OT-223)
10x10-"
smd transistor kn
PZT3906
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Untitled
Abstract: No abstract text available
Text: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA
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b53T31
BLT80
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Untitled
Abstract: No abstract text available
Text: CHIP PHOTO-TRANSISTOR CmSENSOR mum • Features 1. Developed as a chip type SMD photo-transistor for both right-angle and upright uses 2. Small and square size, dimensions : 3.2 L x 2.4(W)x2.4(H)mm 3. Automatic mounting by chip mounter avail able 4. Reflow soldering available
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CPT-181
950nmlR3tCttSSSHSH
CL-200IRt
CL-200IR
L-2001R
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transistor A25 SMD
Abstract: transistor smd ZR tic 126 TRANSISTOR SMD I-314 transistor smd ZR 22 i314
Text: ü iä H W S & ' y y y * h VzjyVTs^ C P T - 2 9 5 / U — X _ Surface Mountable Chip Photo-transistor CPT-290 Series Features 1. f Ä 7 D f R ] ^ ö ' p ZJj - h 1. Developed as a chip type SMD photo transistor for both reverse and top
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CPT-290
100ST2
L-201IR
CL-201
transistor A25 SMD
transistor smd ZR
tic 126 TRANSISTOR SMD
I-314
transistor smd ZR 22
i314
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transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4
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BFS17/BFS17R
BFS17
BFS17R
26-Mar-97
transistor MAR 819
transistor MAR 543
sl2 357
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transistor SMD Lf
Abstract: LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors
Text: Switching Diode SMD SOT-23 Plastic Use Advantages T3 S Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
transistor SMD Lf
LF transistor smd SOT-23
lF smd transistor
SMD Transistor LF
BKC Semiconductors
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transistor ft 960
Abstract: smd transistor 2x5 tj3b 3b BLT81
Text: N AMER PHILIPS/DISCRETE fc.'ìE D bbS3^31 □ÜSÖ7S'i E71 B i APX _ rro u u m apwiHwm ivn i-iiiiip» ovm iconauciors BLT81 UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA
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BLT81
OT223
OT223
MBA451
MRC089
transistor ft 960
smd transistor 2x5
tj3b 3b
BLT81
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BKC Semiconductors
Abstract: No abstract text available
Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages S 13 Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
BKC Semiconductors
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702 TRANSISTOR smd
Abstract: smd 58a transistor 6-pin transistor 702 F smd TRANSISTOR SMD 702 N 702 L TRANSISTOR smd 702 Z TRANSISTOR smd 702 N smd transistor transistor 702 smd SMD transistor code 702 702 transistor smd code
Text: SIEMENS BUZ 101L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv^di rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ101L Vbs 50V *> 29 A RaS on
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O-220
BUZ101L
C67078-S1355-A2
702 TRANSISTOR smd
smd 58a transistor 6-pin
transistor 702 F smd
TRANSISTOR SMD 702 N
702 L TRANSISTOR smd
702 Z TRANSISTOR smd
702 N smd transistor
transistor 702 smd
SMD transistor code 702
702 transistor smd code
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Untitled
Abstract: No abstract text available
Text: N AMER P H ILIP S /D IS C R E T E b'lE T> • bbSB'iai D0Sfl7ST B7T » A P X rm n p o rro u u m s p w m w u u n BLT81 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures
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BLT81
OT223
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Untitled
Abstract: No abstract text available
Text: uim 1. ^ymy^^y'Jxs>-c±mR uTmmm^m0 • Features 1. Developed as a chip thpe SMD phot-transistor for both reverse and top surface mounting. 2. ^ffi\ -^IS3.8(L xl.6(W)xl.l(H) 2. Small and square size, dimensions : 3 .2 (L)x 1.6(W)X1.1 (H)mm. m < D / im - n m v '( X o
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T-230
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CL-200IR
Abstract: CPT181S CPT-181S
Text: CHIP PHOTO-TRANSISTOR CmSENSOR • ft» ■ Features 2. ^ Jfi^ jilS 3 .2 L x p .4 (W )x 2 .4 (H ) 1. Developed as a chip type SMD photo-tran sistor for both right-angle and upright uses. 2. Small and square size, dimensions : 3.2(L)x 2.4(W)x2.4(H)mm. 3. Automatic mounting by chip mounter avail
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CPT-181
CL-200IR
Ta-25C)
CL-200IR
CPT181S
CPT-181S
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smd transistor SOT-23 fj
Abstract: No abstract text available
Text: BF824 Jv _ H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P tran sisto r in a plastic SO T-23 package especially intended fo r r.f. stages in f.m . front-ends in com m on base c o n fig u ra tio n fo r SMD applications. Q U IC K R E F E R E N C E D A T A
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BF824
smd transistor SOT-23 fj
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Untitled
Abstract: No abstract text available
Text: mm/ Features 1. î M M t t Q M D i m m M & r J W X 37ï?o tä^cDämmm 2. ^ y y v o y ^ - i ^ ^ y i j y 3. J 7 D - [ i ^ m hs 1. Developed as a chip-type SMD Photo-transistor 2. Automatic mounting by chip mounter available 3. Reflow soldering available o
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