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    SMD TRANSISTOR 68 W Search Results

    SMD TRANSISTOR 68 W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 68 W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    capacitor 2200 uF

    Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750
    Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.


    Original     		PDF BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08

    transistor 2N2222 SMD

    Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
    Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980

    4894B

    Abstract: 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols
    Text: LF Wake-up Demonstrator ATAK5278-82 1. General Description The LF wake-up demonstrator is provided to demonstrate the performance of an LF wake-up channel, mainly needed for battery-driven systems. Typical wake-up applications can be found in vehicles for passive entry PE and tire pressure monitoring


    Original     		PDF ATAK5278-82 ATA5278 ATA5282. ATA5278 ATA5282, 4894B 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols

    atmel 0720

    Abstract: 3DC1515S ATAK5276-83 ATAB5276 ATAB5282 3DC1515S-0477X smd x17 auto transmission in vehicles using microcontroller smd transistor t2 ATAB5283
    Text: LF Wake-up Demonstrator ATAK5276-83 1. General Description ATAK5276-83 is intended to demonstrate the performance of an LF wake-up channel needed for battery-driven systems. Typical wake-up applications can be found in vehicles for Tire Pressure Monitoring TPM .


    Original     		PDF ATAK5276-83 ATAK5276-83 ATAB5276) ATAB5283) ATA5276 ATA5283 4857C atmel 0720 3DC1515S ATAB5276 ATAB5282 3DC1515S-0477X smd x17 auto transmission in vehicles using microcontroller smd transistor t2 ATAB5283

    HIR26-21C

    Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
    Text: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight


    Original     		PDF CT1003Q43-V2 HIR26-21C w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor

    6 pin TRANSISTOR SMD CODE 21

    Abstract: No abstract text available
    Text: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)


    Original     		PDF 6N1135, 6N1136 i179081 2002/95/EC 2002/96/EC i179081 6N1135 6N1136 11-Mar-11 6 pin TRANSISTOR SMD CODE 21

    smd transistor marking a7

    Abstract: amplifier A62 marking A76A LMV711 LMV712 LMV712BL LMV712BLX LMV712LD LMV712LDX LMV712MM
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They


    Original     		PDF LMV712 LMV712 200pF smd transistor marking a7 amplifier A62 marking A76A LMV711 LMV712BL LMV712BLX LMV712LD LMV712LDX LMV712MM

    how to test scr

    Abstract: No abstract text available
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They


    Original     		PDF LMV712 200pF how to test scr

    Untitled

    Abstract: No abstract text available
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They


    Original     		PDF LMV712 200pF

    smd 2sd882

    Abstract: 2SB772 SMD 47nF-X2 UM0674 uc3844b application note 2SB772 equivalent MAGNETICA TRANSFORMER 230VAC to 5V DC POWER SUPPLY with transformer, br 2sd882 equivalent 68uf450v
    Text: UM0674 Application note STEVAL-ISA054V1, 100 W SMPS based on the STW9N150 Power MOSFET and UC3844B for industrial applications Introduction This document introduces a solution for industrial power supplies. It takes advantage of the high voltage Power MOSFET, i.e. 1500 V breakdown voltage, to optimize the operation of


    Original     		PDF UM0674 STEVAL-ISA054V1, STW9N150 UC3844B UC3844B. L5970D, smd 2sd882 2SB772 SMD 47nF-X2 UM0674 uc3844b application note 2SB772 equivalent MAGNETICA TRANSFORMER 230VAC to 5V DC POWER SUPPLY with transformer, br 2sd882 equivalent 68uf450v

    SMD TRANSISTOR MARKING 76

    Abstract: smd a62 smd marking CF smd a61 differential pair cascode SMD A115 LMV712MM LMV712MMX LMV712TL LMV711
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-toRail inputs combined with speed and low noise. They offer a


    Original     		PDF LMV712 LMV712 200pF SMD TRANSISTOR MARKING 76 smd a62 smd marking CF smd a61 differential pair cascode SMD A115 LMV712MM LMV712MMX LMV712TL LMV711

    BLF6G10LS-160RN

    Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13

    transistor 9575

    Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1

    D2375

    Abstract: BLF6G10S-45 RF35
    Text: BLF6G10S-45 UHF power LDMOS transistor Rev. 01 — 23 February 2007 Preliminary data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10S-45 BLF6G10S-45 D2375 RF35

    CL10B104KBNC

    Abstract: No abstract text available
    Text: NCS6415DWEVB NCS6415 Evaluation Board Manual http://onsemi.com Description This document describes NCS6415 SOIC−20WB package evaluation board. It should be used in conjunction with the data sheet, which contains full technical details on the device specification and operation. This evaluation


    Original     		PDF NCS6415DWEVB NCS6415 NCS6415DEVB: NCS6415DWEVB/D CL10B104KBNC

    dimmable LED driver

    Abstract: UM10433
    Text: UM10433 SSL2103 dimmable isolated LED driver demo board Rev. 1 — 9 December 2010 User manual Document information Info Content Keywords SSL2103, LED driver, mains dimmable, constant current, driver, mains supply, AC/DC conversion, user manual. Abstract This is a user manual for the SSL2103 mains dimmable 22 W LED.


    Original     		PDF UM10433 SSL2103 SSL2103, dimmable LED driver UM10433

    smd code marking NEC

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
    Text: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part


    Original     		PDF G18756EU3V0SG00 smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP

    transistor d 1302

    Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
    Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component

    amplifier TRANSISTOR 12 GHZ

    Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927
    Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2933S-130 BLS6G2933S-130 amplifier TRANSISTOR 12 GHZ smd transistor w J 3 58 smd transistor equivalent table smd transistor 927

    q406 transistor

    Abstract: MAX3232 smd TRANSISTOR Q406 HC49 MEGATEC 0805B105K250CT D-Sub 44-pin female Connector 8X2 LCD DISPLAY transistor C509 MAX3232 pin schematic q406
    Text: DEMO9S08LC60 Schematic and Bill of Material DC01134 GND C110 22pF BKGD 22pF C109 BDM J104 2 4 6 4 1 3 www.softecmicro.com GND 3V3 PTB1 ENA J103B PTB0 ENA RESET# R101 10M NOT POPULATED 1 3 5 Y101 32,768KHz CRYSTAL 2 J103A XTAL EXTAL 40 41 42 43 44 45 46 47


    Original     		PDF DEMO9S08LC60 DC01134 J103B 768KHz J103A SD00506 100nF BP3/FP40 PTC/10K102FTP RMC1/10K1004FTP q406 transistor MAX3232 smd TRANSISTOR Q406 HC49 MEGATEC 0805B105K250CT D-Sub 44-pin female Connector 8X2 LCD DISPLAY transistor C509 MAX3232 pin schematic q406

    SLD-1083CZ

    Abstract: GaN Bias 25 watt SLD1083CZ InP transistor HEMT 600S680JT250XT
    Text: SLD-1083CZ SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package 4 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: RF083 Product Description Features „ „ „ 4 Watt Output P1dB Single Polarity Supply Voltage


    Original     		PDF SLD-1083CZ RF083 SLD-1083CZ SLD1083CZ 600S680JT250XT T494D106M035AS ECJ2YB1H104K ERJ-3EKF3240V ERJ6GEY0R00V GaN Bias 25 watt InP transistor HEMT 600S680JT250XT

    RF35

    Abstract: Multilayer Ceramic Capacitor 10 uf TDK smd transistor F4
    Text: BLF6G10-45 Power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G10-45 BLF6G10-45 RF35 Multilayer Ceramic Capacitor 10 uf TDK smd transistor F4

    13003 charger

    Abstract: 230v to 5v circuit using 13003 transistor 121k 1kv capacitor
    Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.4 Jun 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2013 - Jun - 26


    Original     		PDF ACT334 ACT512 ACT410 ACT411 ACT410/411 ACT413 F/400V SC053 1000pF/400V 13003 charger 230v to 5v circuit using 13003 transistor 121k 1kv capacitor

    transistor SMD 1p6

    Abstract: SMD transistor n36 TRANSISTOR N36 SMD report on colpitts oscillator a 933 transistor Transistor 933 smd n43 transistor A 933 BFG520 A3 smd transistor spec
    Text: Philips Semiconductors 933 MHz low power downconverter with 60 MHz I.F. ^ lcatlon rePort 933 \r H z L O W P O W E R D O W N C O N V E R T E R W IT H 60 M H z I.F . Introduction This application note describes the performance o f a 900 M Hz low voltage 3 volt dow nconverter


    OCR Scan     		PDF Pf5103 BC807 BFG505X BFG520 BB131 BFG54 transistor SMD 1p6 SMD transistor n36 TRANSISTOR N36 SMD report on colpitts oscillator a 933 transistor Transistor 933 smd n43 transistor A 933 BFG520 A3 smd transistor spec