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    SMD TRANSISTOR 68 P Search Results

    SMD TRANSISTOR 68 P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 68 P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4894B

    Abstract: 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols
    Text: LF Wake-up Demonstrator ATAK5278-82 1. General Description The LF wake-up demonstrator is provided to demonstrate the performance of an LF wake-up channel, mainly needed for battery-driven systems. Typical wake-up applications can be found in vehicles for passive entry PE and tire pressure monitoring


    Original     		PDF ATAK5278-82 ATA5278 ATA5282. ATA5278 ATA5282, 4894B 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols

    atmel 0720

    Abstract: 3DC1515S ATAK5276-83 ATAB5276 ATAB5282 3DC1515S-0477X smd x17 auto transmission in vehicles using microcontroller smd transistor t2 ATAB5283
    Text: LF Wake-up Demonstrator ATAK5276-83 1. General Description ATAK5276-83 is intended to demonstrate the performance of an LF wake-up channel needed for battery-driven systems. Typical wake-up applications can be found in vehicles for Tire Pressure Monitoring TPM .


    Original     		PDF ATAK5276-83 ATAK5276-83 ATAB5276) ATAB5283) ATA5276 ATA5283 4857C atmel 0720 3DC1515S ATAB5276 ATAB5282 3DC1515S-0477X smd x17 auto transmission in vehicles using microcontroller smd transistor t2 ATAB5283

    6 pin TRANSISTOR SMD CODE 21

    Abstract: No abstract text available
    Text: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)


    Original     		PDF 6N1135, 6N1136 i179081 2002/95/EC 2002/96/EC i179081 6N1135 6N1136 11-Mar-11 6 pin TRANSISTOR SMD CODE 21

    how to test scr

    Abstract: No abstract text available
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They


    Original     		PDF LMV712 200pF how to test scr

    smd 2sd882

    Abstract: 2SB772 SMD 47nF-X2 UM0674 uc3844b application note 2SB772 equivalent MAGNETICA TRANSFORMER 230VAC to 5V DC POWER SUPPLY with transformer, br 2sd882 equivalent 68uf450v
    Text: UM0674 Application note STEVAL-ISA054V1, 100 W SMPS based on the STW9N150 Power MOSFET and UC3844B for industrial applications Introduction This document introduces a solution for industrial power supplies. It takes advantage of the high voltage Power MOSFET, i.e. 1500 V breakdown voltage, to optimize the operation of


    Original     		PDF UM0674 STEVAL-ISA054V1, STW9N150 UC3844B UC3844B. L5970D, smd 2sd882 2SB772 SMD 47nF-X2 UM0674 uc3844b application note 2SB772 equivalent MAGNETICA TRANSFORMER 230VAC to 5V DC POWER SUPPLY with transformer, br 2sd882 equivalent 68uf450v

    SMD TRANSISTOR MARKING 76

    Abstract: smd a62 smd marking CF smd a61 differential pair cascode SMD A115 LMV712MM LMV712MMX LMV712TL LMV711
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-toRail inputs combined with speed and low noise. They offer a


    Original     		PDF LMV712 LMV712 200pF SMD TRANSISTOR MARKING 76 smd a62 smd marking CF smd a61 differential pair cascode SMD A115 LMV712MM LMV712MMX LMV712TL LMV711

    K934

    Abstract: CSP1034 Krypton isolation k952 TRANSISTOR SMD MARKING CODE R8 smd diode code GU K936 k2950 Motorola modem schematic diagram 56k MARKING d4 SMD PNP TRANSISTOR
    Text: K²950G/K²950GU DATA ACCESS ARRANGEMENT CHIPSET HIGH PERFORMANCE, LOW COST, ALL SILICON DAA DATA ACCESS ARRANGEMENT FOR US (FCC), CANADA (DOC), and JAPAN (JATE) APPLICATIONS FEATURES ♦ High performance for modems up to V.34/ 33.6Kbps and V.90/56Kbps ♦ Low power consumption: 20mW active,


    Original     		PDF 950G/K 950GU 90/56Kbps K2934L UL1950 K2935U/ K2936U USB1300 220PF 73M2901 K934 CSP1034 Krypton isolation k952 TRANSISTOR SMD MARKING CODE R8 smd diode code GU K936 k2950 Motorola modem schematic diagram 56k MARKING d4 SMD PNP TRANSISTOR

    npn smd 3a

    Abstract: TRANSISTOR SMD 1A FZT955 FZT956 smd fzt955
    Text: Transistors SMD Type NPN Silicon Planar High Voltage Transistor FZT955;FZT956 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 Amps continuous current 4 Very low saturation voltages


    Original     		PDF FZT955 FZT956 OT-223 FZT955 -300mA* -10mA, -100mA, 50MHz npn smd 3a TRANSISTOR SMD 1A FZT956 smd fzt955

    transistor 9575

    Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1

    marking 68g

    Abstract: smd transistor marking da bcw67a smd transistor 556 smd smd transistor H F BCW67A BCW67B BCW68 BCW68F BCW68G
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG


    Original     		PDF OT-23 BCW67, BCW68, BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H BCW67A, marking 68g smd transistor marking da bcw67a smd transistor 556 smd smd transistor H F BCW67A BCW67B BCW68 BCW68F BCW68G

    smd code marking NEC

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
    Text: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part


    Original     		PDF G18756EU3V0SG00 smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP

    5962R0052001VVC

    Abstract: 5962R0052001QVC CDIP2-T18 IS1-2981RH-8 IS1-2981RH-Q IS-2981RH IS2981RH
    Text: IS-2981RH TM Data Sheet Radiation Hardened 8-Channel Source Driver The Star*Power Radiation Hardened IS-2981RH is a monolithic device designed for use in high-side switching applications that benefit from separate grounds for the logic and loads. The device


    Original     		PDF IS-2981RH IS-2981RH -200mA 5962R0052001VVC 5962R0052001QVC CDIP2-T18 IS1-2981RH-8 IS1-2981RH-Q IS2981RH

    transistor d 1302

    Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
    Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component

    amplifier TRANSISTOR 12 GHZ

    Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927
    Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2933S-130 BLS6G2933S-130 amplifier TRANSISTOR 12 GHZ smd transistor w J 3 58 smd transistor equivalent table smd transistor 927

    transistor smd ZR

    Abstract: SMD MARKING CODE TRANSISTOR 501 MARKING SMD PNP TRANSISTOR Zr smd transistor marking zr 2PC4617JR TRANSISTOR SMD MARKING CODE al TRANSISTOR SMD MARKING CODE SP 2108 npn transistor 2PC4617J 2PC4617JS
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 1999 May 04 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J FEATURES PINNING


    Original     		PDF M3D425 2PC4617J SCA63 115002/00/02/pp8 transistor smd ZR SMD MARKING CODE TRANSISTOR 501 MARKING SMD PNP TRANSISTOR Zr smd transistor marking zr 2PC4617JR TRANSISTOR SMD MARKING CODE al TRANSISTOR SMD MARKING CODE SP 2108 npn transistor 2PC4617J 2PC4617JS

    68NC

    Abstract: 2SK3573 transistor 42A
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3573 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 68nC TYP. VDD = 16 V, VGS = 10 V, ID = 83 A Built-in gate protection diode


    Original     		PDF 2SK3573 O-263 68NC 2SK3573 transistor 42A

    2SK3482

    Abstract: M2939 18-A
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3482 TO-252 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 3.80 MAX. VGS = 4.5 V, ID = 18A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 39 m Low Ciss: Ciss = 3600 pF TYP. Unit: mm +0.1 2.30-0.1 0.127 max +0.25 2.65-0.1 MAX. (VGS = 10 V, ID = 18A)


    Original     		PDF 2SK3482 O-252 2SK3482 M2939 18-A

    SMD MARKING CODE TRANSISTOR 501

    Abstract: TRANSISTOR SMD MARKING CODE 501 TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE al SMD transistor MARKING CODE 213 PMBT3904D MARKING CODE SMD IC ic 501 smd 5- pin smd IC 358 TRANSISTOR SMD MARKING CODE rd
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMBT3904D NPN switching double transistor Product specification 1999 Dec 15 Philips Semiconductors Product specification NPN switching double transistor PMBT3904D FEATURES PINNING • Low current max. 100 mA


    Original     		PDF M3D302 PMBT3904D SC-74, 115002/01/pp8 SMD MARKING CODE TRANSISTOR 501 TRANSISTOR SMD MARKING CODE 501 TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE al SMD transistor MARKING CODE 213 PMBT3904D MARKING CODE SMD IC ic 501 smd 5- pin smd IC 358 TRANSISTOR SMD MARKING CODE rd

    2360d

    Abstract: BLF6G10-135RN BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST
    Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 01 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN 2360d BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST

    BLF6G10LS-200RN

    Abstract: BLF6G10-200RN RF35 A1118
    Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN BLF6G10LS-200RN RF35 A1118

    BLF6G10LS-135RN

    Abstract: 2360D BLF6G10-135RN RF35 1961 30 TRANSISTOR
    Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN BLF6G10LS-135RN 2360D RF35 1961 30 TRANSISTOR

    23FEB

    Abstract: sfh6206-2x001
    Text: SFH620A, SFH6206 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input FEATURES A/C 1 4 C C/A 2 3 E • Good CTR linearity depending on forward current • Isolation test voltage, 5300 VRMS 1 • High collector emitter voltage, VCEO = 70 V • Low saturation voltage


    Original     		PDF SFH620A, SFH6206 2002/95/EC 2002/96/EC i179080-2 i179080 SFH620A 2011/65/EU 2002/95/EC. 23FEB sfh6206-2x001

    marking code UL SMD Transistor

    Abstract: ctr 34 SFH6206-3T SFH6206-2T smd diode code CUL SFH6206-2X001T TRANSISTOR SMD MARKING CODE 2t smd optocoupler marking 1 transistor smd code marking 101 TRANSISTOR SMD typ 056
    Text: SFH620A, SFH6206 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input FEATURES A/C 1 4 C C/A 2 3 E • Good CTR linearity depending on forward current • Isolation test voltage, 5300 VRMS 1 • High collector emitter voltage, VCEO = 70 V • Low saturation voltage


    Original     		PDF SFH620A, SFH6206 i179080-2 i179080 SFH620A 11-Mar-11 marking code UL SMD Transistor ctr 34 SFH6206-3T SFH6206-2T smd diode code CUL SFH6206-2X001T TRANSISTOR SMD MARKING CODE 2t smd optocoupler marking 1 transistor smd code marking 101 TRANSISTOR SMD typ 056

    Untitled

    Abstract: No abstract text available
    Text: Radiation Hardened Programmable Low Power Op Amps HS-3530ARH, HS-3530AEH Features The HS-3530ARH, HS-3530AEH are Low Power Operational Amplifiers, which are internally compensated monolithic devices offering a wide range of performance specifications. Parameters such as power dissipation, slew rate, bandwidth,


    Original     		PDF HS-3530ARH, HS-3530AEH HS-3530AEH FN4653