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    SMD TRANSISTOR 1800 Search Results

    SMD TRANSISTOR 1800 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 1800 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    equivalent ZO 607

    Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original     		HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 equivalent ZO 607 2sc5872 2SC5849 HTT1132E 702 smd transistor PDF

    702 transistor smd code

    Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original     		HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 702 transistor smd code HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752 PDF

    993 395 pnp npn

    Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10


    Original     		BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q PDF

    Untitled

    Abstract: No abstract text available
    Text: CERLED Ceramic Chip SMD SMD - Wide-Viewing Angle CR 10 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR10TE-DLF with daylight filter on request.


    Original     		CR10TE-DLF) DTS1005 PDF

    Untitled

    Abstract: No abstract text available
    Text: CERLED Ceramic Chip SMD SMD - Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight filter on request.


    Original     		CR50TE-DLF) DTS1005 PDF

    DTS1005

    Abstract: No abstract text available
    Text: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 10 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR10TE-DLF with daylight


    Original     		CR10TE-DLF) DTS1005 DTS1005 PDF

    SMD TRANSISTOR MARKING BR

    Abstract: 2SC5209 marking RH
    Text: Transistors SMD Type Small Signal Transistor 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage VEBO


    Original     		2SC5209 100mA 500mA -10mA SMD TRANSISTOR MARKING BR 2SC5209 marking RH PDF

    V9040Z

    Abstract: PBHV9040Z PBHV8540Z SC-73 MARKING SMD IC CODE 10 pin
    Text: PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV9040Z OT223 SC-73) PBHV8540Z. AEC-Q101 PBHV9040Z V9040Z PBHV8540Z SC-73 MARKING SMD IC CODE 10 pin PDF

    PBHV8540T

    Abstract: PBHV9040T MARKING CODE SMD IC
    Text: PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV9040T O-236AB) PBHV8540T. AEC-Q101 PBHV9040T PBHV8540T MARKING CODE SMD IC PDF

    Untitled

    Abstract: No abstract text available
    Text: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight


    Original     		CR50TE-DLF) DTS1005 PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 PBHV9040X 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor 9 December 2013 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV9040X SC-62) PBHV8540X. AEC-Q101 PDF

    CR50TE-DLF

    Abstract: DTS1005 transistor smd cr CR50TE
    Text: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight


    Original     		CR50TE-DLF) DTS1005 CR50TE-DLF DTS1005 transistor smd cr CR50TE PDF

    MARKING 1R

    Abstract: FMMT5089
    Text: Transistors IC SMD Type Small Signal Transistor FMMT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Small signal transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		FMMT5089 OT-23 500mA, 20MHz 200mA, 15KHz MARKING 1R FMMT5089 PDF

    transistors marking HJ

    Abstract: SMD BR 17 smd transistor marking hg smd transistor 1800 HG marking smd transistor 2sc3439 2SC3439 marking H-G hFE CLASSIFICATION Marking markING HG
    Text: Transistors SMD Type Small Signal Transistor 2SC3439 Features High hFE=400 to 1800. High collector current Icm=3A,Ic=1.5A High collector dissipation Pc=500mW Low VCE(sat) VCE(sat)=0.2V typ(@Ic=1a,IB=20mA) Small package for mounting. Absolute Maximum Ratings Ta = 25


    Original     		2SC3439 500mW 500mA -10mA transistors marking HJ SMD BR 17 smd transistor marking hg smd transistor 1800 HG marking smd transistor 2sc3439 2SC3439 marking H-G hFE CLASSIFICATION Marking markING HG PDF

    SMD Transistor Y34

    Abstract: Y33 SMD TRANSISTOR SMD Transistor Y33 marking Y33 pnp smd y34 smd marking y33 2SA1462 marking y34
    Text: Transistors IC SMD Type PNP Silicon Epitaxia Transistor 2SA1462 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High speed,high voltage switching. High ft:fT=1800MHz TYP. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01


    Original     		2SA1462 OT-23 1800MHz -10mA SMD Transistor Y34 Y33 SMD TRANSISTOR SMD Transistor Y33 marking Y33 pnp smd y34 smd marking y33 2SA1462 marking y34 PDF

    BFS17

    Abstract: BFS17R BFS17W BFS17 E1
    Text: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280


    Original     		BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 BFS17 E1 PDF

    BFS17

    Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original     		BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 D-74025 bfs17 Vishay 702 TRANSISTOR sot-23 85038 PDF

    BJW transistor

    Abstract: SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking
    Text: Transistors IC SMD Type General Purpose Transistor 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol


    Original     		2SD2351 50mA/5mA) 100ms. 50mA/5mA -10mA, 100MHz BJW transistor SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T8 83 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMZ350UPE DFN1006-3 OT883) PDF

    smd transistor JJ

    Abstract: t8 smd transistor smd NE mbc1B transistor 75 U50 BLT14
    Text: Philips Semiconductors Preliminary specification UHF power transistor BLT14 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.


    OCR Scan     		BLT14 OT96-1 MAM227 711062b OT96-1. smd transistor JJ t8 smd transistor smd NE mbc1B transistor 75 U50 BLT14 PDF

    R Y SMD TRANSISTOR

    Abstract: 2L smd transistor AT 11-S-i smd transistor 2T SOT96-1 BLT13 D102 smd transistor nc 61 NCR100
    Text: Preliminary specification Philips Semiconductors UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.


    OCR Scan     		BLT13 OT96-1 MAM227 OT96-1. R Y SMD TRANSISTOR 2L smd transistor AT 11-S-i smd transistor 2T SOT96-1 BLT13 D102 smd transistor nc 61 NCR100 PDF

    t8 smd transistor

    Abstract: 552 smd transistor smd transistor w J 3 58 transistor 75 U50 8x 8 smd transistor BLT14 MBC180 transistor t8
    Text: Philips Semiconductors Preliminary specification UHF power transistor BLT14 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.


    OCR Scan     		BLT14 OT96-1 MAM227 711002b MBC180-1 OT96-1. 711DflBb t8 smd transistor 552 smd transistor smd transistor w J 3 58 transistor 75 U50 8x 8 smd transistor BLT14 MBC180 transistor t8 PDF

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


    OCR Scan     		BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A PDF

    Untitled

    Abstract: No abstract text available
    Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1


    OCR Scan     		BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 PDF