SMD TRANSISTOR 05 Search Results

BSS84 MARKING CODE

Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 NXP SMD TRANSISTOR MARKING CODE smd code marking WV TRANSISTOR SMD MARKING CODES TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84 Equivalent BSS84 marking code e1 smd
Contextual Info: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 05 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.

TRANSISTOR SMD MARKING CODE 1d

Abstract: SMD TRANSISTOR MARKING 1D TRANSISTOR SMD MARKING CODES PMBTA42 PMBTA92 marking code DG SMD Transistor transistor marking DG SMD TRANSISTOR MARKING .1D
Contextual Info: PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 — 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92.

TRANSISTOR SMD CODE PACKAGE SOT323

Abstract: TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR 2a PMST3904 PMST3906 pmst3906 transistor smd transistor MARKING 2A npn MARKING CODE SMD IC transistor sc-70 marking codes 1325 pnp
Contextual Info: PMST3906 40 V, 200 mA PNP switching transistor Rev. 05 — 29 April 2009 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT323 SC-70 very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904.

Contextual Info: PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 — 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92.

2n3439ua

Abstract: SFT343 SMD.22
Contextual Info: SFT3439S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 A /450 Volts NPN Switching Transistor DESIGNER’S DATA SHEET SMD.22 Features: • Switching Transistor

TRANSISTOR SMD

Contextual Info: NTE2401 Silicon PNP Transistor RF Stages in FM Front Ends Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications.

PBSS4350D

Abstract: PBSS5350D
Contextual Info: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 5 — 23 March 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

Contextual Info: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

pn06l05

Abstract: SPB100N06S2L-05 SPB100N06S2L05 SPP100N06S2L-05 Q67060-S6042
Contextual Info: SPP100N06S2L-05 SPB100N06S2L-05 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 55 RDS on max. SMD version 4.4

TRANSISTOR SMD MARKING CODE A45

Contextual Info: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G

smd transistor MARKING 2A

Abstract: smd transistor 2A npn smd 2a smd transistor MARKING 2A npn FCX1053A Transistor marking 2A transistor smd marking
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1053A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 21mv Typ. Extremely low equivalent on-resistance.

npn smd 3a

Abstract: SMD BR 17 smd 2a ic SMD TRANSISTOR MARKING 2A 2A marking transistor npn smd 2a smd transistor 2A smd transistor marking br FCX1051A
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1051A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 17mv Typ. Extremely low equivalent on-resistance.

PN0605

Abstract: SPB100N06S2-05 SPP100N06S2-05 6E60 Q67060-S6049
Contextual Info: SPP100N06S2-05 SPB100N06S2-05 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on max. SMD version 4.7 m
ID 100 A P-TO263-3-2 Type

PN06L05

Abstract: ANPS071E SPB100N06S2L-05 SPP100N06S2L-05 Q67060-S6043
Contextual Info: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P- TO263 -3-2 • 175°C operating temperature 55 V 4.4 mΩ 100 A P- TO220 -3-1 • Avalanche rated

2n0605

Abstract: BSPP80N06S2-05 SPP80N06S2-05 d 132 smd code diode sm smd diode marking
Contextual Info: SPP80N06S2-05 SPB80N06S2-05 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on max. SMD version 4.8 m ID 80 A P- TO263 -3-2 Type Package Ordering Code

smd TRANSISTOR 05c sot23

Abstract: transistor smd marking NA sot-23 smd diode marking 77 CMBT8050 smd transistor marking n 3 package 23 smd transistor 3K
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION NPN 1 = BASE 2 = E M ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

2n06l05

Abstract: ANPS071E SPB80N06S2L-05 SPI80N06S2L-05 SPP80N06S2L-05
Contextual Info: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on max. SMD version 4.5 m ID 80 A P- TO263 -3-2 Type Package

857 TRANSISTOR smd

Abstract: TRANSISTOR SMD typ 056 smd transistor 857 data HFE9
Contextual Info: SFT4300S.22 SFT4300S.22L Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2 A, 150 Volts general purpose NPN Transistor DESIGNER’S DATA SHEET SMD.22

smd TRANSISTOR 05c sot23

Abstract: CMBT8050 ts 4141 TRANSISTOR smd tr415
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION NPN 1 = BASE 2 = E M ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS

smd TRANSISTOR 05c sot23

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION NPN 1 = BASE 2 = E M ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PI N CONFI GURATI ON NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS

Contextual Info: SO T4 57 PMN27XPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

SDV1005E

Abstract: V5R5
Contextual Info: Multilayer Chip Varistor – SDV Series Operating Temp. : -55℃~+125℃ FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time <0.5ns Excellent solderability (Ni, Sn plating) ● ● ● APPLICATIONS Transient voltage protection for IC and transistor

Contextual Info: SO T4 57 PMN70XPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.