Untitled
Abstract: No abstract text available
Text: HCMOS/TTL SMD PROGRAMMABLE CRYSTAL CLOCK OSCILLATOR ASELP SERIES *RoHS COMPLIANT 3.2 x 2.5 x 1.05mm | | | | | | | | | | | | | | | FEATURES: • Quick delivery within one to five days for small quantities • Wide frequency range from 1MHz up to 125MHz • Micro miniature size for high density applications
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125MHz
000pcs/reel)
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DK MARKING CODE
Abstract: No abstract text available
Text: HCMOS/TTL SMD CRYSTAL CLOCK OSCILLATOR ASEP SERIES *RoHS COMPLIANT 3.2 x 2.5 x 1.05mm | | | | | | | | | | | | | | | FEATURES: • Quick delivery within one to five days for small quantities • Wide frequency range from 1MHz up to 125MHz • Micro miniature size for high density applications
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125MHz
000pcs/reel)
DK MARKING CODE
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transistor SMD DK
Abstract: smd transistor marking DK transistor smd marking dk smd MARKING dk transistor 2SD1628 SMD SMD marking DK ON MARKING SMD NPN TRANSISTOR BR MARKING SMD TRANSISTOR transistor SMD DK -RN 2SD1628
Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1628 Features Low saturation voltage. High hFE. Large current capacity. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter
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2SD1628
250mm2X0
transistor SMD DK
smd transistor marking DK
transistor smd marking dk
smd MARKING dk
transistor 2SD1628 SMD
SMD marking DK ON
MARKING SMD NPN TRANSISTOR BR
MARKING SMD TRANSISTOR
transistor SMD DK -RN
2SD1628
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Untitled
Abstract: No abstract text available
Text: Transistors Diodes SMD Type Product specification 2SD1628 Features Low saturation voltage. High hFE. Large current capacity. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol
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2SD1628
250mm2X0
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DJ SMD
Abstract: smd MARKING dk 2SB1025 MARKING DH DJ marking marking DJ 2sB102 SMD marking DK ON
Text: Transistors SMD Type Silicon PNP Epitaxial 2SB1025 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -120 V Collector to emitter voltage VCEO -80 V Emitter to base voltage VEBO
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2SB1025
-100V,
DJ SMD
smd MARKING dk
2SB1025
MARKING DH
DJ marking
marking DJ
2sB102
SMD marking DK ON
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Untitled
Abstract: No abstract text available
Text: SMD Transient Voltage Suppressor Formosa MS SMF5.0 C A-MS THRU SMF170(C)A-MS List List. 1 Package outline. 2
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SMF170
JESD22-A102
MIL-STD-750D
METHOD-1051
METHOD-1038
METHOD-1056
METHOD-1021
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Untitled
Abstract: No abstract text available
Text: SMD Transient Voltage Suppressor Formosa MS SMF5.0 C A-MS THRU SMF170(C)A-MS List List. 1 Package outline. 2
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SMF170
JESD22-A102
MIL-STD-750D
METHOD-1051
METHOD-1038
METHOD-1056
METHOD-1021
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Untitled
Abstract: No abstract text available
Text: SMD Transient Voltage Suppressor Formosa MS SMBS Series List List. 1 Package outline. 2
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JESD22-A102
MIL-STD-750D
METHOD-1051
METHOD-1038
METHOD-1056
METHOD-1021
1000hrs.
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MT49H16M18
Abstract: No abstract text available
Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate
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288Mb:
MT49H32M9
MT49H16M18
MT49H8M36
09005aef80a41b46/Source:
09005aef809f284b
MT49H16M18
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MICRON BGA PART MARKING
Abstract: MT49H16M36
Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate
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576Mb:
MT49H64M9
MT49H32M18
MT49H16M36
09005aef80a41b46/Source:
09005aef809f284b
MICRON BGA PART MARKING
MT49H16M36
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RLDRAM mt49h
Abstract: MT49H16M18C
Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization
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288Mb:
MT49H16M18C
09005aef80a41b59/Source:
09005aef811ba111
288Mb
RLDRAM mt49h
MT49H16M18C
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MT49H16M18C
Abstract: No abstract text available
Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization
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288Mb:
MT49H16M18C
09005aef80a41b59/Source:
09005aef811ba111
2003Micron
MT49H16M18C
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MT49H16M18C
Abstract: No abstract text available
Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization
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PDF
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288Mb:
MT49H16M18C
09005aef815b2df8/Source:
09005aef811ba111
2003Micron
MT49H16M18C
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RLDRAM
Abstract: MT49H16M18C
Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization
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288Mb:
MT49H16M18C
09005aef80a41b59/Source:
09005aef811ba111
2003Micron
RLDRAM
MT49H16M18C
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bu 2506 DF
Abstract: No abstract text available
Text: 05407 SMBJ SERIES Only One Name Means ProTek’Tion 600 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AA PACKAGE FEATURES MECHANICAL CHARACTERISTICS • UL File Recognition #E333727 • Compatible with IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV
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DO-214AA
E333727
5/50ns
bu 2506 DF
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smd code marking x18
Abstract: MT49H16M36
Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate
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576Mb:
MT49H64M9
MT49H32M18
MT49H16M36
09005aef80a41b46/Source:
09005aef809f284b
smd code marking x18
MT49H16M36
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cn/A/U 237 BG
Abstract: No abstract text available
Text: 05405 SMAJ SERIES Only One Name Means ProTek’Tion 400 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AC PACKAGE FEATURES MECHANICAL CHARACTERISTICS • UL File Recognition #E333727 • IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV
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DO-214AC
E333727
5/50ns
cn/A/U 237 BG
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cn/A/U 237 BG
Abstract: No abstract text available
Text: 05405 SMAJ SERIES Only One Name Means ProTek’Tion 400 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AC PACKAGE FEATURES MECHANICAL CHARACTERISTICS • UL File Recognition #E333727 • IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV
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DO-214AC
E333727
5/50ns
cn/A/U 237 BG
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BA5 marking
Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O
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288Mb
MT49H16M18C
MT49H32M9C
144-Ball
288Mb
09005aef80a41b59/zip:
09005aef811ba111
MT49H8M18C
BA5 marking
BA7 marking
plastic BA5 marking code
A53 SMD Marking Code
ba7 transistor
SMD MARKING CODE ACY
MT49H16M18C
smd cod
RLDRAM
A22 SMD MARKING CODE
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MT49H32M18C
Abstract: No abstract text available
Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock
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PDF
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576Mb:
MT49H32M18C
MT49H64M9C
09005aef80a41b59/Source:
09005aef811ba111
MT49H32M18C
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MICRON BGA PART MARKING
Abstract: amd catalog MT49H32M18C
Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock
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PDF
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576Mb:
MT49H32M18C
MT49H64M9C
09005aef80a41b59/Source:
09005aef811ba111
MICRON BGA PART MARKING
amd catalog
MT49H32M18C
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MT49H16M18C
Abstract: No abstract text available
Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O
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288Mb
288Mb
09005aef80a41b59/zip:
09005aef811ba111
MT49H8M18C
MT49H16M18C
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MICRON BGA PART MARKING
Abstract: No abstract text available
Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate
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PDF
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288Mb:
MT49H32M9
MT49H16M18
MT49H8M36
09005aef80a41b46/Source:
09005aef809f284b
MICRON BGA PART MARKING
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smd suppressor marking mx
Abstract: TV06B330K marking code smd ky smd marking KE tv06b100j smd marking KD S 1040 smd smd marking code je 84 marking code EY SMD smd marking KH
Text: COAICHII» SMD Transient Voltage Suppressor S M O D io d e s S p o c la lls t TV06B5V0-G Thru TV06B171-G Working Peak Reverse Voltage: 5.0 -170 Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA Ideal fo r surface m ount applications Easy pick and place
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OCR Scan
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PDF
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TV06B5V0-G
TV06B171-G
DO-214AA
MIL-STD-750,
SMB/DO-214AA
TV06B131
TV06B151K
TV06B151
TV06B161K
TV06B161
smd suppressor marking mx
TV06B330K
marking code smd ky
smd marking KE
tv06b100j
smd marking KD
S 1040 smd
smd marking code je 84
marking code EY SMD
smd marking KH
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