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    SMD MARKING CODE T2N Search Results

    SMD MARKING CODE T2N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD MARKING CODE T2N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IS1715

    Abstract: qml-38535 5962R0052101TXC smd TRANSISTOR marking T1 IS1715ARH
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Make changes to tT1, TDP, VPAUX, tT2, TDA tests and switch footnotes 2 and 3 as specified under table I. - ro 00-08-21 R. MONNIN B Make changes to SEP as specified under 1.5 and ICCS, tT1, tT2 tests as specified in table I. – ro


    Original     		PDF IS9-1715ARH-8 IS9-1715ARH-T IS9-1715ARH-Q IS0-1715ARH-Q IS1715 qml-38535 5962R0052101TXC smd TRANSISTOR marking T1 IS1715ARH

    IS1715ARH

    Abstract: IS-1715ARH QML-38535 transistor smd marking KA IS1715 TDA 4422 CDFP4-F16 IS9-1715ARH-T smd mark 601 8 pin
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Make changes to tT1, TDP, VPAUX, tT2, TDA tests and switch footnotes 2 and 3 as specified under table I. - ro 00-08-21 R. MONNIN B Make changes to SEP as specified under 1.5 and ICCS, tT1, tT2 tests as specified in table I. – ro


    Original     		PDF 5962F0052101V9A IS0-1715ARH-Q IS1715ARH IS-1715ARH QML-38535 transistor smd marking KA IS1715 TDA 4422 CDFP4-F16 IS9-1715ARH-T smd mark 601 8 pin

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Make changes to tT1, TDP, VPAUX, tT2, TDA tests and switch footnotes 2 and 3 as specified under table I. - ro Make changes to SEP as specified under 1.5 and ICCS, tT1, tT2 tests as specified in table I. – ro


    Original     		PDF

    transistor SMD MARKING CODE P02

    Abstract: smd transistor marking p30 smd transistor marking p04 SMD TRANSISTOR MARKING 9f TRANSISTOR SMD MARKING CODE 8D AL p06 smd transistor MGR237 TDA8006A13 TRANSISTOR SMD MARKING CODE p24 marking code EA SMD Transistor
    Text: INTEGRATED CIRCUITS DATA SHEET TDA8006 Multiprotocol IC Card coupler Product specification Supersedes data of 1998 Aug 18 File under Integrated Circuits, IC02 2000 Feb 21 Philips Semiconductors Product specification Multiprotocol IC Card coupler TDA8006 FEATURES


    Original     		PDF TDA8006 80C52 RS232 OT307 OT319 transistor SMD MARKING CODE P02 smd transistor marking p30 smd transistor marking p04 SMD TRANSISTOR MARKING 9f TRANSISTOR SMD MARKING CODE 8D AL p06 smd transistor MGR237 TDA8006A13 TRANSISTOR SMD MARKING CODE p24 marking code EA SMD Transistor

    viking b-2 class 130

    Abstract: viking b-2 class b viking CSR viking b-2 class 130 b viking csr0204 CSR0207 CL02A marking SMD CODES 1002 RF Transceiver 1.9 ghz Thermocouple antiacid
    Text: Resistors Thin Film Precision Chip Resistor AR Series 2 Thin Film Precision Resistor CSR Series 7 Anti-Corrosive Thin Film Precision Chip Resistor PR Series 10 Current Sensing Chip Resistor CS Series 14 Ultra Low Ohm Metal Strip Chip Resistor LR Series 18


    Original     		PDF 15MINS 30MINS viking b-2 class 130 viking b-2 class b viking CSR viking b-2 class 130 b viking csr0204 CSR0207 CL02A marking SMD CODES 1002 RF Transceiver 1.9 ghz Thermocouple antiacid

    Capacitor 100v 47nj

    Abstract: B10T TRWL08 eia0603 125khz RFID Transponder Coils mode s transponders TR4308I 401J 125khz Transponder Inductor T22N
    Text: TOKEN RF INDUCTORS Wirewound Inductors / Thin Film & Multilayer Inductors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong


    Original     		PDF 1000hrs 24hrs TRMI160808 TRMI160808, TRMI201209, TRMI201212, TRMI321611 680nH Capacitor 100v 47nj B10T TRWL08 eia0603 125khz RFID Transponder Coils mode s transponders TR4308I 401J 125khz Transponder Inductor T22N

    MT46H128M16LF

    Abstract: MT46H128M32L2 MT46H128M16 MT46H64M32LF 152-Ball MT46H256M32 winbond 05 solder ball material MT46H256M32L4 MT46H128 152-Ball PoP
    Text: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 Features


    Original     		PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 09005aef83a73286 MT46H128M16LF MT46H128M32L2 MT46H128M16 MT46H64M32LF 152-Ball MT46H256M32 winbond 05 solder ball material MT46H256M32L4 MT46H128 152-Ball PoP

    A1833

    Abstract: No abstract text available
    Text: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4


    Original     		PDF MT46H128M16LF MT46H256M16L2 MT46H64M32LF MT46H128M32L2 MT46H256M32L4 09005aef83a73286 A1833

    T103 0830

    Abstract: t1n6 WL02 T WL05 WL05-T3N0 T22N 900 T3N6 WL02 Woofer 801 WL06
    Text: Wire Wound Chip Inductor－WL Series Feature －Wire wound Ceramic Construction Provide High SRFs －Ultra-compact Inductors Provide Exceptional Q Values －Low profile , High Current are Available －Miniature SMD Chip Inductor for Fully Automated Assembly


    Original     		PDF 12hrs T103 0830 t1n6 WL02 T WL05 WL05-T3N0 T22N 900 T3N6 WL02 Woofer 801 WL06

    WIRE WOUND CHIP INDUCTOR

    Abstract: WL05TR30
    Text: WL Series — Wire Wound Chip Inductor Feature －Wire wound Ceramic Construction Provide High SRFs －Ultra-compact Inductors Provide Exceptional Q Values －Low profile , High Current are Available －Miniature SMD Chip Inductor for Fully Automated Assembly


    Original     		PDF 12hrs WIRE WOUND CHIP INDUCTOR WL05TR30

    MT46H128M16

    Abstract: MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball
    Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


    Original     		PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef8457b3eb MT46H128M16 MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball

    F012

    Abstract: MT46H128M16 Dual LPDDR2 ELPIDA mobile dram LPDDR2 MT46H128 MT46H64M32LF MT46H128M
    Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


    Original     		PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef8457b3eb F012 MT46H128M16 Dual LPDDR2 ELPIDA mobile dram LPDDR2 MT46H128 MT46H64M32LF MT46H128M

    MT46H64M32

    Abstract: MT46H128M16LF cx 2601 MT46H64M32LF
    Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


    Original     		PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef8457b3eb MT46H64M32 MT46H128M16LF cx 2601 MT46H64M32LF

    MT46H256M32

    Abstract: LPDDR2 SDRAM micron MT46H128 samsung* lpddr2* pop package 78s24 M1110
    Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 – 32 Meg x 16 x 4 Banks x 4


    Original     		PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef83a73286 MT46H256M32 LPDDR2 SDRAM micron MT46H128 samsung* lpddr2* pop package 78s24 M1110

    MT46H64M32

    Abstract: 064MEG MT46H128M16 LPD-D
    Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


    Original     		PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef8457b3eb MT46H64M32 064MEG MT46H128M16 LPD-D

    MT46H128M16

    Abstract: MT46H64M32 MT46H128M MT46H64M32LF MT46H256M32 MT46H128M32L2 lpddr2 168 ELPIDA LPDDR2 POP cx 2601 SAC105
    Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


    Original     		PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef8457b3eb MT46H128M16 MT46H64M32 MT46H128M MT46H64M32LF MT46H256M32 MT46H128M32L2 lpddr2 168 ELPIDA LPDDR2 POP cx 2601 SAC105

    Untitled

    Abstract: No abstract text available
    Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


    Original     		PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef8457b3eb

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


    Original     		PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 60-ball 90-ball 09005aef84e25f2e

    MT46H128M32L2

    Abstract: ELPIDA DDR User
    Text: Preliminary‡ 2Gb: x16, x32 Automotive Mobile LPDDR SDRAM Features Automotive Mobile LPDDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4


    Original     		PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef84e25f2e MT46H128M32L2 ELPIDA DDR User

    wfbga

    Abstract: 1GB-x16 152-Ball PoP MT46H64M16LF
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks MT46H32M32LG – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks


    Original     		PDF MT46H64M16LF MT46H32M32LF MT46H32M32LG 09005aef83d9bee4 wfbga 1GB-x16 152-Ball PoP MT46H64M16LF

    smd marking code T2N

    Abstract: ELPIDA lpddr 1GB-x16 152-Ball PoP MT46H64M16LF
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks MT46H32M32LG – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks


    Original     		PDF MT46H64M16LF MT46H32M32LF MT46H32M32LG 09005aef83d9bee4 smd marking code T2N ELPIDA lpddr 1GB-x16 152-Ball PoP MT46H64M16LF

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF/LG – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Table 2: • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS


    Original     		PDF 256Mb: MT46H16M16LF MT46H8M32LF/LG 09005aef82091978 09005aef8209195b MT46H16M16LF_

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF/LG – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Table 2: • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS


    Original     		PDF 256Mb: MT46H16M16LF MT46H8M32LF/LG 09005aef82091978 09005aef8209195b MT46H16M16LF_

    linear L 9113 smd

    Abstract: MAXQ7667 APE12 Motorola transistor smd marking codes ultrasonic generator 20khz A3D5 Ultrasonic distance smd transistor marking sp1 MAXQ10 ultrasonic movement DETECTOR with alarm
    Text: Rev 0; 4/09 MAXQ7667 USER’S GUIDE BURST ENABLE BURST BURST OUTPUT, DUTY CYCLE, AND PULSE COUNTER 0.47µF 0.47µF REFBG REFSAR 0.47µF REFECHO AIN0 AIN1 AVDD AIN2 AIN3 THERMISTOR AIN4 AIN5 VOLTAGE REFERENCE SIGMA-DELTA ADC -1 2mV 0mV AVDD/2 MUX 120kΩ BATTERY+


    Original     		PDF MAXQ7667 470pF 16-BIT 16-MIPS BSP129 330pF linear L 9113 smd APE12 Motorola transistor smd marking codes ultrasonic generator 20khz A3D5 Ultrasonic distance smd transistor marking sp1 MAXQ10 ultrasonic movement DETECTOR with alarm