SMD JS 5 Search Results

Contextual Info: LP616 series SMD Top View Package FEA T U R ES l i E 3 3 » 1 OPTICAL CHARACTERISTICS /M*üH Small SMD Package fe JS Color Coordinates * * [IV ] Luminous Intensity* Aqua • 0.18, 0.11 10.Ocd Viewing Angle 24deg Cyan • ( 0.20, 0.24 ) 17.0cd m n u > x *< < 7

smd diode a7

Abstract: schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd
Contextual Info: Schottky Barrier Diode Twin Diode mm DF30PC3M OUTLINE 30V 30A Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating-Small-RKG • î 3 V f=0.4V M ain Use • K'.yxU-jS?8Bfi± • Reverse connect protection for DC power source • DC OR-output

smd diode marking U1

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10PC3 Unit-mm Weight 0.326g Typ 30 V 10A Feature • SMD • SMD • î 2 ® V f =0.4 V • U ltra -L o w V f=0.4V • iJ 'S = À l; jS î § M • High lo R a tin g -S m a ll-P K G Main Use

smd diode marking sm 34

Contextual Info: Schottky Barrier Diode mtmm Single Diode o u t l in e M2FH3 30V 6A Feature 1Small SMD ' Super-Low V f = 0 .3 6 V • /JvS Ü S M D • tliafîV F = 0.36V Main Use • i K y z r U —jS JS K it • DC/DC n y j { - 5 > • Reverse connect protection for DC power source

smd diode SM 97

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30PC3M PyhfLig- ffl U nit-m m W eight 1.5g(Typ) 10.2 30V 30A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M

D 92 M - 02 DIODE

Abstract: JS marking diode c 92 M - 02 DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20PC3M PyhfLig- ffl Unit-mm Weight 1.5g(Typ) 10.2 30V 20A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M 4.7

D1FM3

Contextual Info: Schottky Barrier Diode Single Diode mtmm D1FM3 o u tlin e 30V 5A Feature 1Small SMD 1Tj=150°C ' Low Vf=0.46V 1Low lR=0.1mA » /jv g y s M D >Tj=150°C • V f=0.46V •filR=0.1mA Main Use • K y j J — jS JÜKilt • DC/DC •m m m îïJ K y z iy • Reverse connect protection for

4433619 crystal

Contextual Info: d C B JS ll? Crystal Unit CX-49F iE S tS fcffS J V - Y 9 4 ~t/ SMD M ^ J lfa F e a tu r e • it£ J ') — K <7)'LM 7ksl}I#J:F T ''T o • It is a 5mm height, compact, J lead crystal unit for surface mounting. • It is able to cope by means of a metal case and completely sealed

IR LFN

Abstract: D1FK70 smd diode ss 501 SMD MARKING LFN ir smd m7 diode super fast diode smd marking "OA" smd diode 1f diode smd marking VD
Contextual Info: Super Fast Recovery Diode Single Diode m tm m D1FK70 o u tlin e 700V 0.8A Feature • • • • • /JvS JS M D • S iS Œ • Vrm =700V Small SMD High Voltage Low Noise Vrm=700V Main Use • DC/D C o y it—9 • iS Iâ .F A lÆ f ê S • • • •

PST1440P02C

Contextual Info: BR ä ö i c» c - w - s t s t ZJ ¿Ft 3 o -3 3" bf ^ i* bf * S O # 'S' Pi S S f * 5 * 3 £l $ £& * Z H5 » * * » :3 4 * S í ? z b fr s & B l ¿ i s E H & ïüt -» » a flfr » » # í# ífr s I » 3 # 9 3- M|t » 4S B » y- # t 3 Pi bf S » ift 3 Pi

Contextual Info: COTCO LUMINANT DEVICE HUIZHOU LTD. SPECIFICATION FOR COTCO LED LAMP Document No: Model No : Rev. No : Date: SPE/LP6-EWN1-03-N3-MT LP6-EWN1-03-N3-MT 01 2007-05-09 Description: 120 Degree 6.0 x 5.0mm SMT-LED in White Color with Water Transparent *This specification is only for MT

LP6-EWN1-03-N3

Contextual Info: COTCO LUMINANT DEVICE HUIZHOU LTD. SPECIFICATION FOR COTCO LED LAMP Document No: Model No : Rev. No : Date: SPE/LP6-EWN1-03-N3 LP6-EWN1-03-N3 02 2007-05-08 Description: 120 Degree 6.0 x 5.0mm SMT-LED in White Color with Water Transparent Dice Material: InGaN

Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A

32N50

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C

LP6-EWN1-03-N3

Abstract: N3 smd
Contextual Info: Cree SMD LED Model # LP6-EWN1-03-N3 Data Sheet 120-degree, 6.0 x 5.0 mm, SMT LED in white color with water-transparent lens Applications • • • • Indicators Illuminations LCD Back Lights Automobile Applications Absolute Maximum Ratings TA = 25°C

smd diode K2

Abstract: smd diode 1301 DIODE smd marking k2 transistor smd K2 smd diode JS k2 smd transistor smd transistor k2 SOT-363 marking 05 BAW101S smd JS 3
Contextual Info: Diodes SMD Type High Voltage Double Diode BAW101S SOT-363 Unit: mm +0.15 2.3-0.15 Features +0.1 1.25-0.1 0.525 +0.1 1.3-0.1 0.65 Small plastic SMD package 0.36 High switching speed: max. 50 ns +0.05 0.1-0.02 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 High continuous reverse voltage: 300 V

smd diode JS

Abstract: BA277 diode smd diode marking 85 smd marking 35 smd marking rd smd marking js KA277
Contextual Info: Diodes SMD Type Band-Switching Diode KA277 BA277 SOD-523 +0.05 0.3-0.05 Features Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Small plastic SMD package Continuous reverse voltage: max. 35 V + +0.1 0.6-0.1 - Continuous forward current: max. 100 mA +0.1 1.6-0.1 Low diode capacitance: max. 1.2 pF

Contextual Info: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current

Contextual Info: SIEMENS BUZ 101L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dy/d? rated • Low on-resistance • t7 5 °C operating temperature Pin 1 Pin 2 Pin 3 • also in TO-220 SMD available Type BUZ 101L Vds

dap 002 so-16

Abstract: LM4960 LM4862 HM 1211 hfr 20w MUAB dap8 ITO5 LM4001 LM4888
Contextual Info: m it Boomer 1-5 » E ä iS flU g F i 6-7 * ± S ß t t - X Ä . 8 m m m m * r ä x ic & m p 3 a t y * « »s s T i r « * « Ä # ä # * i f f l * m « js w m tM ® « M » * 3 § > w sM M «5*TW±*ft»¥ >ramm >mm « H jfc f c W Ä ii-^ n f iß S ö it» * « ’ m * «

Contextual Info: RN719D K /D iod es RN719D ->y a > m piN^-c^-K Silicon Diffused Junction PIN Diodes • if$ J| • ^•JgT|-JfeE|/'Dimensions U n it: mm 1) 'J'S ffiiii& 2 'l'7 T '< fc -S (SMD)o ^o 3) a ff H T 'f c -5 , • Features 1) Small surface mount type (SMD). 2) Low high frequency foward resist­

smd JS 5 marking

Abstract: marking AT2 MARKING AT1 BST39 BST40 smd marking cc
Contextual Info: Transistors SMD Type NPN High-Voltage Transistors BST39; BST40 Features Low current max. 50 mA High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol collector-base voltage BST39 (open emitte) BST40 collector-emitter voltage BST39 (open-base )

Contextual Info: Transistors SMD Type Product specification BF620; BF622 Features Low current max. 50 mA High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol collector-base voltage BF620 VCBO Rating Unit 300 V (open emitte) BF622 250 V collector-emitter voltage

Contextual Info: Transistors SMD Type Product specification BST39; BST40 Features Low current max. 50 mA High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol collector-base voltage BST39 (open emitte) BST40 collector-emitter voltage BST39 (open-base )