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    SMD DIODE MARKING 156 Search Results

    SMD DIODE MARKING 156 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SMD DIODE MARKING 156 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    philips zener diode c24

    Abstract: Zener diode smd marking code .18 C30 DIODE ZENER DIODE ZENER smd marking 72 Zener diode smd marking 22 iz c220 zener diode smd diode UM 35 DIODE smd marking code UM 31 philips zener diode c12 Zener diode smd marking code C24
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BZG01 series SMA voltage regulator diodes Product specification Supersedes data of 2000 Feb 17 2003 Mar 06 Philips Semiconductors Product specification SMA voltage regulator diodes BZG01 series FEATURES


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    M3D168 BZG01 DO-214AC /imaging/BITTING/CPL/20030424/04232003 HTML04232003/BZG01-C10 May-06-2003 philips zener diode c24 Zener diode smd marking code .18 C30 DIODE ZENER DIODE ZENER smd marking 72 Zener diode smd marking 22 iz c220 zener diode smd diode UM 35 DIODE smd marking code UM 31 philips zener diode c12 Zener diode smd marking code C24 PDF

    DIODE smd marking 702

    Abstract: diode smd marking code 421 DIODE SMD MARKING CODE 702 suppressor diode smd 5pha 5pfm 4008 SMD DIODE TV50C110K SMD MARKING CODE 529 308 smd marking
    Text: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV50C110-G Thru. TV50C441-G Working Peak Reverse Voltage: 11 to 440 Volts Power Dissipation: 5000 Watts RoHS Device Features DO-214AB SMC -Glass passivated chip. -5000W peak pulse power capability with a


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    TV50C110-G TV50C441-G -5000W DO-214AB DO-214AB MIL-STD-750, QW-BTV14 DIODE smd marking 702 diode smd marking code 421 DIODE SMD MARKING CODE 702 suppressor diode smd 5pha 5pfm 4008 SMD DIODE TV50C110K SMD MARKING CODE 529 308 smd marking PDF

    3N06L06

    Abstract: C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06
    Text: Target data sheet IPI80N06S3L-06 IPP80N06S3L-06,IPB80N06S3L-06 OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 5.6 mΩ ID 80 A P- TO262 -3-1


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    IPI80N06S3L-06 IPP80N06S3L-06 IPB80N06S3L-06 IPP80N06S3L-06 3N06L06 BIPP80N06S3L-06, 3N06L06 C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06 PDF

    RESISTOR NETWORK SMD 8 PIN array isolated 2512

    Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
    Text: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011


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    88EM8011 MV-S104861-00, 88EM8011 MV-S104861-00 RESISTOR NETWORK SMD 8 PIN array isolated 2512 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606 PDF

    3N06L05

    Abstract: SMD MARKING CODE g23
    Text: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A • MSL1 up to 260°C peak reflow


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    IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80N06S3L-05 PG-TO263-3-2 3N06L05 SMD MARKING CODE g23 PDF

    2n3904 smd pin configuration

    Abstract: 560 K. 561 k SMD 653K HCPL-5501 hp 1002 HP 2531 4N55 6N135 6N136 HCPL-2530
    Text: H Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device Part Number and DESC


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    HCPL-553X HCPL-653X HCPL-655X HCPL-550X MIL-PRF-38534 QML-38534, 6N135, 6N136, HCPL-2530/ HCPL-5530) 2n3904 smd pin configuration 560 K. 561 k SMD 653K HCPL-5501 hp 1002 HP 2531 4N55 6N135 6N136 HCPL-2530 PDF

    3N06L05

    Abstract: smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23
    Text: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


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    IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L05 IPI80N06S3L-05 3N06L05 smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23 PDF

    npn 2n3906

    Abstract: smd transistor marking 11H smd diode marking B3
    Text: NE1617A Temperature monitor for microprocessor systems Rev. 04 — 30 July 2009 Product data sheet 1. General description The NE1617A is an accurate two-channel temperature monitor. It measures the temperature of itself and the temperature of a remote sensor. The remote sensor is a


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    NE1617A NE1617A 2N3904/2N3906, fa7ADS/01 NE1617ADS/G 31-Dec-10 30-Jun-11 NE1617ADS npn 2n3906 smd transistor marking 11H smd diode marking B3 PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    PDF

    Zener diode smd marking code S3

    Abstract: SMD CODE MARKING s7 SOT23 Zener diode smd marking code 621 triac 214 215 216 BZX84C5V1 spice smd z70 smd diode B3 SOT23 Z3 marking Zener diode smd marking S4 SMD CODE PACKAGE SOT23 486
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW


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    M3D088 BZX84 BZX84-A X84-C5V1 BZX84-C5V6 BZX84-C62 BZX84-C68 BZX84-C6V2 BZX84-C6V8 Zener diode smd marking code S3 SMD CODE MARKING s7 SOT23 Zener diode smd marking code 621 triac 214 215 216 BZX84C5V1 spice smd z70 smd diode B3 SOT23 Z3 marking Zener diode smd marking S4 SMD CODE PACKAGE SOT23 486 PDF

    3N0605

    Abstract: No abstract text available
    Text: IPB80N06S3-05 IPI80N06S3-05, IPP80N06S3-05 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    IPB80N06S3-05 IPI80N06S3-05, IPP80N06S3-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80N06S3-05 PG-TO263-3-2 3N0605 PDF

    L30ESD24VC3-2

    Abstract: smd diode marking e5
    Text: LITE-ON SEMICONDUCTOR DUAL ESD PROTECTION DIODES L30ESDxxxC3-2 STAND-OFF VOLTAGE - 5 ~24 Volts POWER DISSIPATION - 300 WATTS GENERAL DESCRIPTION SOT23 The L30ESD5V0C3-2~L30ESD24VC3-2 are a dual voltage suppressor designed to protect components which are connected to


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    L30ESDxxxC3-2 L30ESD5V0C3-2 L30ESD24VC3-2 L30ESD5V0C3-2 L30ESD12VC3-2 L30ESD24VC3-2 smd diode marking e5 PDF

    L30ESD24VC3-2

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR DUAL ESD PROTECTION DIODES L30ESDxVC3-2 STAND-OFF VOLTAGE - 5~24 Volts POWER DISSIPATION - 300 WATTS GENERAL DESCRIPTION SOT23 The L30ESD5V0C3-2~L30ESD24VC3-2 are a dual voltage suppressor designed to protect components which are connected to


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    L30ESDxVC3-2 L30ESD5V0C3-2 L30ESD24VC3-2 L30ESD5V0C3-2 L30ESD12VC3-2 L30ESD24VC3-2 PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    D63A

    Abstract: ANPS071E IPB80N06S3-05 IPI80N06S3-05 IPP80N06S3-05 PG-TO263-3-2
    Text: IPB80N06S3-05 IPI80N06S3-05, IPP80N06S3-05 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.1 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


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    IPB80N06S3-05 IPI80N06S3-05, IPP80N06S3-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0605 IPI80N06S3-05 D63A ANPS071E IPB80N06S3-05 IPI80N06S3-05 IPP80N06S3-05 PG-TO263-3-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8424DB Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 VDS (V) 8 Qg (Typ.) 20 nC


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    Si8424DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si8404DB

    Abstract: No abstract text available
    Text: Si8404DB Vishay Siliconix N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ.) • TrenchFET Power MOSFET • Industry First 1.5 V Rated MOSFET


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    Si8404DB Si8404DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8424DB Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 VDS (V) 8 Qg (Typ.) 20 nC


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    Si8424DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


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    PMV65UN O-236AB) PDF

    Si8404DB

    Abstract: No abstract text available
    Text: Si8404DB Vishay Siliconix N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ.) • TrenchFET Power MOSFET • Industry First 1.5 V Rated MOSFET


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    Si8404DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si8404DB

    Abstract: No abstract text available
    Text: Si8404DB Vishay Siliconix N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ.) • TrenchFET Power MOSFET • Industry First 1.5 V Rated MOSFET


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    Si8404DB Si8404DB-T1-E1 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8424DB Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 VDS (V) 8 Qg (Typ.) 20 nC


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    Si8424DB 11-Mar-11 PDF

    4vtc

    Abstract: smd marking WMM diode smd marking jy smd marking AA marking WMM SMD DIODE JY marking smd JST 05 smd marking jy smd jst smd regulator marking AJ
    Text: Super Fast Recovery Diode mtmm o u t l i n e Single Diode DE3L20U Unit! mm Package : E-pack Weight 0.326k Typ N 200V 3A Feature • SMD • SM D • e y -fx • Low Noise • trr=35ns • tr r-3 5 n s Type No. f Vv If 1 -2 V 31 — 99 J J _ — 01 Main Use


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    DE3L20U trr-35ns 50HzX J532-U 4vtc smd marking WMM diode smd marking jy smd marking AA marking WMM SMD DIODE JY marking smd JST 05 smd marking jy smd jst smd regulator marking AJ PDF

    smd diode HX

    Abstract: No abstract text available
    Text: Super Fast Recovery Diode mtm OUTLINE Single Diode DE3L20U Unit! mm W eight 0.326g Typ Package : E-pack 200V 3A Feature • SM D • SM D • ß y -rx • Low Noise • trr=35ns • trr=35ns Main Use • Sw itching Regulator >D C / D C n y t K — S • DC/D C Converter


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    DE3L20U smd diode HX PDF