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    SMB MARKING U12 Search Results

    SMB MARKING U12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD-COSMAJSMBP-000 Amphenol Cables on Demand Amphenol AD-COSMAJSMBP-000 SMA Jack to SMB Plug Adapter - Amphenol Connex RF Adapter (SMA Female / SMB Male) 2 Datasheet
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    SMB MARKING U12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ML35

    Abstract: ML35PT ML31PT S7-200 SMC MARKING S6 SM4003S MARKING S6 smB SOD-123S USM2 s7 200
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Maximum Maximum Maximum Maximum Average Forward Peak Reverse Peak Rectified Current Surge Current Current Reverse @Half-Wave @ 25°C @ 8.3mS Voltage Resistive Load Superimposed TA IR IO PRV IFM Surge


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    PDF PSM11PT OD-123S PSM12PT PSM13PT MCL51PT MCL52PT MCL53PT MCL54PT MCL55PT ML35 ML35PT ML31PT S7-200 SMC MARKING S6 SM4003S MARKING S6 smB SOD-123S USM2 s7 200

    STTH112U

    Abstract: do-41 footprint JESD97 STTH112 STTH112A STTH112RL
    Text: STTH112 High voltage ultrafast rectifier Main product characteristics IF AV 1A VRRM 1200 V Tj (max) 175° C VF (max) 1.65 V Features and benefits DO-41 STTH112 • Low forwarded voltage drop ■ High reliability ■ High surge current capability ■ Soft switching for reduced EMI disturbances


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    PDF STTH112 DO-41 STTH112, STTH112A STTH112U STTH112U do-41 footprint JESD97 STTH112 STTH112A STTH112RL

    STTH112U

    Abstract: STTH112 STTH112A STTH112RL
    Text: STTH112/A/U HIGH VOLTAGE ULTRAFAST RECTIFIER Main product characteristics IF AV 1A VRRM 1200 V Tj (max) 175 °C VF (max) 1.65 V Features and benefits DO-41 STTH112 • Low forwarded voltage drop ■ High reliability ■ High surge current capability ■ Soft switching for reduced EMI disturbances


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    PDF STTH112/A/U DO-41 STTH112 STTH112, STTH112A STTH112U STTH112U STTH112 STTH112A STTH112RL

    do-41 footprint

    Abstract: U12 smb smb marking u12 H12 SMA marking U12 smb u12 STTH112A smb marking stmicroelectronics STTH112RL STTH112
    Text: STTH112/A/U HIGH VOLTAGE ULTRAFAST RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 1200 V Tj (max) 175 °C VF (max) 1.65 V FEATURES AND BENEFITS • ■ ■ ■ ■ Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances


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    PDF STTH112/A/U DO-41 STTH112 STTH112, STTH112A STTH112U do-41 footprint U12 smb smb marking u12 H12 SMA marking U12 smb u12 STTH112A smb marking stmicroelectronics STTH112RL STTH112

    do-41 footprint

    Abstract: marking U12 u12 smb JESD97 STTH112 STTH112A STTH112RL STTH112U ST U12 smb ST U12 sma
    Text: STTH112 High voltage ultrafast rectifier Main product characteristics IF AV 1A VRRM 1200 V Tj (max) 175° C VF (max) 1.65 V Features and benefits DO-41 STTH112 • Low forwarded voltage drop ■ High reliability ■ High surge current capability ■ Soft switching for reduced EMI disturbances


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    PDF STTH112 DO-41 STTH112A STTH112, STTH112U do-41 footprint marking U12 u12 smb JESD97 STTH112 STTH112A STTH112RL STTH112U ST U12 smb ST U12 sma

    STTH112A

    Abstract: STTH112 STTH112RL AN1471 STTH112U
    Text: STTH112 High voltage ultrafast rectifier Features • Low forwarded voltage drop ■ High reliability ■ High surge current capability ■ Soft switching for reduced EMI disturbances ■ Planar technology DO-41 STTH112 Description The STTH112, which is using ST ultrafast high


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    PDF STTH112 DO-41 STTH112, STTH112A STTH112U STTH112A STTH112 STTH112RL AN1471 STTH112U

    9343

    Abstract: No abstract text available
    Text: STTH112 High voltage ultrafast rectifier Features • Low forwarded voltage drop ■ High reliability ■ High surge current capability ■ Soft switching for reduced EMI disturbances ■ Planar technology DO-41 STTH112 Description The STTH112, which is using ST ultrafast high


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    PDF STTH112 DO-41 STTH112, STTH112A STTH112U 9343

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 2GB x72, DR, FB, 1.50V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT18GTF25672FD - 2GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower Power consumption 1.40V ≤ VDD = VDDQ ≤ 1.70V for DDR2 SDRAM


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    PDF 240-Pin MT18GTF25672FD MO-256 MT18GTF25672FD, DDR2-667) 09005aef82b6453f/Source: 09005aef82b6451c GTFc18256x72FD

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 2GB x72, DR, FB, 1.50V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT18GTF25672FD – 2GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower power consumption


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    PDF 240-Pin MT18GTF25672FD 100ms MO-256 MT18GTF25672FD, 09005aef82b6453f/Source: 09005aef82b6451c GTF18C256x72FD

    pn133

    Abstract: SN123 MT36GTF51272F
    Text: Preliminary‡ 4GB x72, DR, FB, 1.50V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272F – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower power consumption 1.40V ≤ VDD = VDDQ ≤ 1.70V for DDR2 SDRAM


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    PDF 240-Pin MT36GTF51272F 100ms MO-256 MT36GTF51272F, 80here 09005aef82b5e9cc/Source: 09005aef82b5e99e GTF36C512x72F pn133 SN123 MT36GTF51272F

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 4GB x72, DR, FB, 1.55V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36RTF51272F – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower power consumption 1.50V ≤ VDD = VDDQ ≤ 1.90V for DDR2 SDRAM


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    PDF 240-Pin MT36RTF51272F MO-256 MT36RTF51272F, DDR2-667) 09005aef82b5dfb9/Source: 09005aef82b5dfec RTF36c512x72

    MT18RTF25672FDY-53E

    Abstract: PN133
    Text: Preliminary‡ 2GB x72, DR, FB, 1.55V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT18RTF25672FD – 2GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower power consumption


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    PDF 240-Pin MT18RTF25672FD MO-256 MT18RTF25672FD, 09005aef82b63cf2/Source: 09005aef82b63cd7 RTF18c256x72FD MT18RTF25672FDY-53E PN133

    TPE11

    Abstract: TPT20 CON6A v2 tpr4 pr48b PT13B condor E5 Condor LVCMOS15 LVCMOS25
    Text: LatticeEC Standard Evaluation Board – Revision B User’s Guide April 2007 ebug10_01.4 Lattice Semiconductor LatticeEC Standard Evaluation Board – Revision B User’s Guide Introduction The LatticeEC Standard Evaluation Board provides a convenient platform to evaluate, test and debug user


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    PDF ebug10 120-pin) 32-bit PVG5H503A01 TPE11 TPT20 CON6A v2 tpr4 pr48b PT13B condor E5 Condor LVCMOS15 LVCMOS25

    S82374EB

    Abstract: S82375SB S82374SB 297735 82375EB S82375EB 82374EB 82374SB 82434nx 82C54
    Text: Intel 82374/5 EB/SB EISA Bridge PCIset Specification Update Release Date: April, 1997 The Intel 82374EB/SB and 82375EB/SB EISA Bridge PCIset may contain design defects or errors known as errata which may cause the product to deviate from published specifications.


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    PDF 82374EB/SB 82375EB/SB 82375SB S82374EB S82375SB S82374SB 297735 82375EB S82375EB 82374EB 82374SB 82434nx 82C54

    U12627E

    Abstract: SO10 package U11047E Z78F9801GB-3BS-MTX Z78F9801GB-8ES ti01 marking
    Text: PRODUCT SPECIFICATION MOS INTEGRATED CIRCUIT Z78F9801 8-BIT SINGLE-CHIP MICROCONTROLLER The Z78F9801 is a Z789800 sub-series product for a USB keyboard of the 78K/0S series. The Z78F9801 replaces the internal masked ROM of the Z789800 with flash memory, which enables the


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    PDF Z78F9801 Z78F9801 Z789800 78K/0S U12627E SO10 package U11047E Z78F9801GB-3BS-MTX Z78F9801GB-8ES ti01 marking

    uPD789026

    Abstract: uPD789046 PD789800 uPD78F9801 uPD78F9801GB-3BS-MTX uPD78F9801GB-8ES U11047E marking ti01
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD78F9801 8-BIT SINGLE-CHIP MICROCONTROLLER The µPD78F9801 is a µPD789800 sub-series product for a USB keyboard of the 78K/0S series. The µPD78F9801 replaces the internal masked ROM of the µPD789800 with flash memory, which enables the


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    PDF PD78F9801 PD78F9801 PD789800 78K/0S PD7898ce uPD789026 uPD789046 uPD78F9801 uPD78F9801GB-3BS-MTX uPD78F9801GB-8ES U11047E marking ti01

    MT36HTF1G72FZ

    Abstract: No abstract text available
    Text: 8GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT36HTF1G72FZ – 8GB Features Figure 1: 240-Pin FBDIMM (MO-256 R/C E) • DDR2 functionality and operations supported as defined in the component data sheet • 240-pin, fully buffered dual in-line memory module


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    PDF 240-Pin MT36HTF1G72FZ 240-pin, PC2-6400, PC2-5300, PC2-4200 09005aef84e934e8 htf36c1gx72fz MT36HTF1G72FZ

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


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    PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    Untitled

    Abstract: No abstract text available
    Text: 2GB x72, DR 240-Pin DDR2 SDRAM FBDIMM (DR, FB, x72) Features DDR2 SDRAM FBDIMM MT18HTF25672FDZ – 2GB For the latest component data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: 240-Pin FBDIMM (MO-256 R/C B) • 240-pin, DDR2 fully buffered dual in-line memory


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    PDF 240-Pin MT18HTF25672FDZ MO-256 240-pin, PC2-4200, PC2-5300, PC2-6400 09005aef83d4d75e/Source:

    MT36HTF51272FZ

    Abstract: No abstract text available
    Text: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT36HTF51272FZ – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin, fully buffered dual in-line memory module (FBDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, or


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    PDF 240-Pin MT36HTF51272FZ 240-pin, PC2-4200, PC2-5300, PC2-6400 09005aef83d491e1Source: 09005aef83d49311 htf36c512x72fz MT36HTF51272FZ

    240 pin DIMM DDR2 connector JEDEC

    Abstract: MT72HTS1G72F U29B MT72HTS1G72FY-667
    Text: 8GB x72, ECC, QR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT72HTS1G72F – 8GB For components data sheets, refer to Micron’s Web site: www.micron.com Features • • • • • • • • • • • • • • • • • • • • •


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    PDF 240-Pin MT72HTS1G72F 240-pin, PC2-5300 PC2-6400 09005aef831789ab/Source: 09005aef83178a1f HTS72C1G72F 240 pin DIMM DDR2 connector JEDEC MT72HTS1G72F U29B MT72HTS1G72FY-667

    U-28

    Abstract: HTF36C256
    Text: 2GB, 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT36HTF25672FZ – 2GB MT36HTF51272FZ – 4GB Features Figure 1: 240-Pin FBDIMM (MO-256 R/C E) • DDR2 functionality and operations supported as defined in the component data sheet • 240-pin, fully buffered dual in-line memory module


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    PDF 240-Pin MT36HTF25672FZ MT36HTF51272FZ 240-pin, PC2-6400, PC2-5300, PC2-4200 09005aef83d491e1 htf36c256 512x72fz U-28

    Untitled

    Abstract: No abstract text available
    Text: 2GB, 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT36HTF25672F – 2GB MT36HTF51272F – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin, fully buffered dual in-line memory module


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    PDF 240-Pin MT36HTF25672F MT36HTF51272F 240-pin, PC2-4200, PC2-5300, PC2-6400 09005aef829a1e4d/Source: 09005aef8297c0ad HTF36C256