SMB CASE FOOTPRINT Search Results

CASE 403A

Abstract: marking code AYWW 403A-03 SMB CASE
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE G SCALE 1:1 DATE 07 JUL 2008 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.

on semiconductor U1J

Abstract: ON U1J smb marking U1J marking u1j u1j marking code marking code U1A 110T3 160T3 120T3 marking code u1j
Contextual Info: MURS120T3 Series Preferred Devices Surface Mount Ultrafast Power Rectifiers MURS105T3, MURS110T3, MURS115T3, MURS120T3, MURS140T3, MURS160T3 Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications

diode U1J

Abstract: MURS160T3G MURS105T3 MURS110T3 MURS115T3 MURS120T3 MURS140T3 MURS160T3 MURS120T3, SMB GENERAL SEMICONDUCTOR MARKING SMB
Contextual Info: MURS120T3 Series Preferred Devices Surface Mount Ultrafast Power Rectifiers MURS105T3, MURS110T3, MURS115T3, MURS120T3, MURS140T3, MURS160T3 http://onsemi.com Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications

diode U1J

Abstract: 160T3 diode Marking codes u1d ON diode u1G MARKING U1J MURS160T3 marking code U1A u1A marking code u1j marking code MURS105T3
Contextual Info: MURS120T3 Series Preferred Devices Surface Mount Ultrafast Power Rectifiers MURS105T3, MURS110T3, MURS115T3, MURS120T3, MURS140T3, MURS160T3 Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications

S210

Abstract: SK22 SK23 SK24 SK25 SK26 SK28
Contextual Info: SK22 – S210 W TE PO WE R SEM IC O ND UC TO R S 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! ! Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak For Use in Low Voltage Application

SMB marking 30A

Contextual Info: S3AB – S3MB WTE POWER SEMICONDUCTORS 3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Power Loss

Taiwan SemiConductor S1M

Abstract: S1A-T1 MARKING S1J S1m diode S1m Taiwan S1M-T S1A-35 S1M-T3 s1m smb
Contextual Info: S1A – S1M W TE PO WE R SEM IC O ND UC TO R S 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss

sr3214

Abstract: SR34 MARKING SR32 SR34 SR33 SR35 SR36 SR38 SR39 SMB marking 30A
Contextual Info: SR32 – SR39 WTE POWER SEMICONDUCTORS 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 100A Peak For Use in Low Voltage Application

ER2B-T1

Contextual Info: ER2A – ER2J WTE POWER SEMICONDUCTORS 2.0A SURFACE MOUNT SUPER FAST RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 50A Peak Low Power Loss

marking we smb

Abstract: SMb CASE footprint S110 SK12 SK13 SK14 SK15 SK16 SK18
Contextual Info: SK12 – S110 W TE PO WE R SEM IC O ND UC TO R S 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! ! Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage Application

SR310

Abstract: SR310-T3 SR34 diode schottky 5 A SMB case SR32 SR33 SR35 SR36 SR38 SMB marking 30A
Contextual Info: SR32 – SR310 WTE POWER SEMICONDUCTORS 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 100A Peak For Use in Low Voltage Application

MARKING 34 smb

Abstract: smb 34
Contextual Info: ER1A – ER1J WTE POWER SEMICONDUCTORS 1.0A SURFACE MOUNT SUPER FAST RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss

marking we smb

Abstract: SMB CASE s2m smb
Contextual Info: S2A – S2M W TE PO WE R SEM IC O ND U C TO RS 2.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak Low Power Loss

Contextual Info: FR1A – FR1K W TE PO WE R SEM IC O ND UC TO R S 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak

Contextual Info: FR2A – FR2K W TE PO WE R SEM IC O ND U C TO RS 2.0A SURFACE MOUNT FAST RECOVERY RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 50A Peak

UF2K

Contextual Info: UF2A – UF2K W TE PO WE R SEM IC O ND U C TO RS 2.0A SURFACE MOUNT ULTRA FAST RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 50A Peak

on semiconductor U1J

Abstract: diode U1J diode u1G smb marking U1J MARKING U1J u1j marking code MURS120T3G MURS140T3G diode Marking codes u1d ON marking code u1j diode
Contextual Info: MURS120T3 Series Preferred Devices Surface Mount Ultrafast Power Rectifiers MURS105T3, MURS110T3, MURS115T3, MURS120T3, MURS140T3, MURS160T3 http://onsemi.com Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications

do-15 footprint

Contextual Info: STTH2R02 Ultrafast recovery diode Main product characteristics IF AV 2A VRRM 200 V Tj (max) 175° C VF (typ) 0.7 V trr (typ) 15 ns A K A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times

do-15 footprint

Abstract: do-41 footprint STTH1R02A smb marking stmicroelectronics st smb package marking STTH STTH1R02 STTH1R02Q STTH1R02QRL STTH1R02RL
Contextual Info: STTH1R02 Ultrafast recovery diode Main product characteristics IF AV 1.5 A VRRM 200 V Tj (max) 175° C VF (typ) 0.7 V trr (typ) 15 ns A K A A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times

on semiconductor U1J

Abstract: MARKING U1J ON U1J 110t3
Contextual Info: MURS120T3 Series Preferred Devices Surface Mount Ultrafast Power Rectifiers MURS105T3, MURS110T3, MURS115T3, MURS120T3, MURS140T3, MURS160T3 http://onsemi.com Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications

Contextual Info: STTH1R02 Ultrafast recovery diode Main product characteristics IF AV 1.5 A VRRM 200 V Tj (max) 175° C VF (typ) 0.7 V trr (typ) 15 ns A K A A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times

Contextual Info: STTH1R02 Ultrafast recovery diode Main product characteristics IF AV 1.5 A VRRM 200 V Tj (max) 175 °C VF (typ) 0.7 V trr (typ) 15 ns A K A A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times

bkjl

Abstract: MBRS2040LT3 MBRS2040LT3G CASE 403A
Contextual Info: MBRS2040LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

marking P2w

Abstract: SMB TRANSISTOR SUB STTH2R02A STTH2R02QRL STTH2R02 STTH2R02Q STTH2R02U do-15 footprint transistor p2w
Contextual Info: STTH2R02 Ultrafast recovery diode Main product characteristics IF AV 2A VRRM 200 V Tj (max) 175° C VF (typ) 0.7 V trr (typ) 15 ns A K A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times