n06hd
Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220
Text: TND310 ON Semiconductor Device Nomenclature Prepared by: Steve West ON Semiconductor http://onsemi.com REFERENCE MANUAL Whenever possible, ON Semiconductor uses the following numbering systems in the naming of their products. The ESD/TVS, small signal diode and transistor, and
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TND310
TND310/D
n06hd
N Channel MOS FET 3 ghz
International rectifier thyristor manual
SOT953
Thyristor to220
N Channel MOS FET up to 5 ghz
MOS FET SOT-223 ON
st naming
DC variable power center tap
MOTOROLA TRANSISTOR TO-220
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Abstract: No abstract text available
Text: 650nm FP Laser Diode Module • • • 650nm FP Laser Diode Module Features • Center wavelength 650nm Built-in monitor detector o o Operating temperature -10 C to 50 C Hermetically sealed TO-18 package in pigtailed or receptacle housing with FC, ST or SC connector
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650nm
650nm
100cm
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Text: 650nm Laser Diode SM Module • Center wavelength 650nm • Built-in monitor detector • Operating temperature -10 C to 50 C • Hermetically sealed TO-18 package in pigtailed or o 650nm Laser Diode SM Module Features o receptacle housing with FC, ST or SC connector
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650nm
650nm
100cm
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Untitled
Abstract: No abstract text available
Text: 1310nm FP Laser Diode Module 1310nm FP Laser Diode Module Features • Center wavelength 1310nm • Low threshold current • High speed tr/tf < 0.7ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -40oC to 85oC • Hermetically sealed TO-18 package in pigtailed or
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1310nm
1310nm
-40oC
100cm
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Untitled
Abstract: No abstract text available
Text: 2.5Gbps 1550nm DFB Laser Diode Module 2.5Gbps 1550nm DFB Laser Diode Module Features • Center wavelength 1550nm • Low threshold current • High speed tr/tf < 0.12ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC
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1550nm
1550nm
-20oC
100cm
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Untitled
Abstract: No abstract text available
Text: 1.25Gbps 1550nm DFB Laser Diode Module 1.25Gbps 1550nm DFB Laser Diode Module Features • Center wavelength 15500nm • Low threshold current • High speed tr/tf < 0.4ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC
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25Gbps
1550nm
15500nm
-20oC
100cm
25Gbps
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Untitled
Abstract: No abstract text available
Text: 2.5Gbps 1310nm DFB Laser Diode Module receptacle housing with FC, ST or SC connector Applications • Fiber In The Loop • ATM, SONET/SDH • Motorway and railway networks • Intra and interoffice links • Subscriber loops Specifications Optical And Electrical Characteristics T=25+/-3 ° C unless specified otherwise
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1310nm
100cm
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Untitled
Abstract: No abstract text available
Text: 1.25Gbps 1310nm DFB Laser Diode Module 1.25Gbps 1310nm DFB Laser Diode Module Features • Center wavelength 1310nm • Low threshold current • High speed tr/tf < 0.4ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC
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25Gbps
1310nm
1310nm
-20oC
100cm
25Gbps
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Untitled
Abstract: No abstract text available
Text: 1550nm FP Laser Diode Module • • • • • • • 1550nm FP Laser Diode Module Features Center wavelength 1550nm Low threshold current High speed tr/tf < 0.7ns Built-in InGaAs monitor detector Four-lead package o o Wide operating temperature -40 C to 85 C
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1550nm
1550nm
100cm
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Untitled
Abstract: No abstract text available
Text: 1490nm FP Laser Diode SM Module • • • • • • • 1490nm FP Laser Diode SM Module Features Center wavelength 1490nm Low threshold current High speed tr/tf < 0.7ns Built-in InGaAs monitor detector Four-lead package o o Wide operating temperature -20 C to 85 C
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1490nm
1490nm
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Untitled
Abstract: No abstract text available
Text: 2.5Gbps 1625nm DFB Laser Diode Module 2.5Gbps 1625nm DFB Laser Diode Module Features • Center wavelength 1625nm • Low threshold current • High speed tr/tf < 0.2ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 75oC
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1625nm
1625nm
-20oC
-20dB)
100cm
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Untitled
Abstract: No abstract text available
Text: 1490nm FP Laser Diode SM Module • • • • • • • 1490nm FP Laser Diode SM Module Features Center wavelength 1490nm Low threshold current High speed tr/tf < 0.7ns Built-in InGaAs monitor detector Four-lead package Wide operating temperature -20oC to 85oC
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1490nm
1490nm
-20oC
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Untitled
Abstract: No abstract text available
Text: 2.5Gbps 1550nm FP Laser Diode SM Module Features 2.5Gbps 1550nm FP Laser Diode SM Module • • • • • • • Center wavelength 1550nm Low threshold current High speed tr/tf < 0.12ns Built-in InGaAs monitor detector Four-lead package Wide operating temperature -20oC to 85oC
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1550nm
1550nm
-20oC
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Untitled
Abstract: No abstract text available
Text: 2.5Gbps 1310nm FP Laser Diode SM Module Features 2.5Gbps 1310nm FP Laser Diode SM Module • • • • • • • Center wavelength 1310nm Low threshold current High speed tr/tf < 0.12ns Built-in InGaAs monitor detector Four-lead package Wide operating temperature -20oC to 85oC
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1310nm
1310nm
-20oC
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Untitled
Abstract: No abstract text available
Text: 2.5Gbps 1550nm FP Laser Diode SM Module Features 2.5Gbps 1550nm FP Laser Diode SM Module • • • • • • • Center wavelength 1550nm Low threshold current High speed tr/tf < 0.12ns Built-in InGaAs monitor detector Four-lead package o o Wide operating temperature -20 C to 85 C
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1550nm
1550nm
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Untitled
Abstract: No abstract text available
Text: 1490nm FP Laser Diode SM Module • • • • • • • 1490nm FP Laser Diode SM Module Features Center wavelength 1490nm Low threshold current High speed tr/tf < 0.7ns Built-in InGaAs monitor detector Four-lead package Wide operating temperature -20oC to 85oC
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1490nm
1490nm
-20oC
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Untitled
Abstract: No abstract text available
Text: 2.5Gbps 1310nm DFB Laser Diode Module receptacle housing with FC, ST or SC connector Applications • Fiber In The Loop • ATM, SONET/SDH • Motorway and railway networks • Intra and interoffice links • Subscriber loops Specifications Optical And Electrical Characteristics T=25+/-3 °C unless specified otherwise
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1310nm
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Untitled
Abstract: No abstract text available
Text: 2.5Gbps 1310nm FP Laser Diode SM Module Features 2.5Gbps 1310nm FP Laser Diode SM Module • • • • • • • Center wavelength 1310nm Low threshold current High speed tr/tf < 0.12ns Built-in InGaAs monitor detector Four-lead package o o Wide operating temperature -20 C to 85 C
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1310nm
1310nm
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Untitled
Abstract: No abstract text available
Text: • • • • Center wavelength 1550nm • • • Four-lead package 1550nm FP Laser Diode SM Module Features Low threshold current High speed tr/tf < 0.7ns Built-in InGaAs monitor detector o o Wide operating temperature -40 C to 85 C Hermetically sealed TO-18 package in pigtailed or
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1550nm
1550nm
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Untitled
Abstract: No abstract text available
Text: 2.5Gbps 1550nm DFB Laser Diode Module 2.5Gbps 1550nm DFB Laser Diode Module Features • Center wavelength 1550nm • Low threshold current • High speed tr/tf < 0.12ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 85oC
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1550nm
1550nm
-20oC
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Untitled
Abstract: No abstract text available
Text: 2.5Gbps 1625nm DFB Laser Diode Module 2.5Gbps 1625nm DFB Laser Diode Module Features • Center wavelength 1625nm • Low threshold current • High speed tr/tf < 0.2ns • Built-in InGaAs monitor detector • Four-lead package • Wide operating temperature -20oC to 75oC
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1625nm
1625nm
-20oC
-20dB)
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6Q7 tube
Abstract: 6q7g 6q7gt 6q7g tube tube 6q7g pl 500
Text: 6Q7, 6Q7G, 6Q7GT TUNG-SOL - \ DU0-DI0DE • b 'AX. H 13 ñ 3 i p V -tTJ MAX. 2 f H HIGH-MU TRIODE A M PLIFIER 6 MAX. MAX. 1 U N IP O T E N T IA L CATHODE HEATER MAX. MET AL S H E L L SMA LL WAFER 7 P I N O C T AL B A S E
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-rr70
6Q7 tube
6q7g
6q7gt
6q7g tube
tube 6q7g
pl 500
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D1968B
Abstract: D1961B D196 D1968
Text: D196 Series Mu Iti-Oc'a ve PIN Diode Attenuators iA /ith The D196 Series is a family of nonreflective voltage variable 60 dB PIN Diode Attenuators cover ing the frequency range from 0.5 GHz to 18 GHz in four overlapping multi-octave bands. Each model in the Series is equipped with an in
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Abstract: No abstract text available
Text: ULTRA-BROADBAND DROP-IN r e m o v a b le c o n n e c to rs SP4T DIODE SWITCH MODELSWM1400 REFLECTIVE .500-18.0 GHz GENERAL INFORMATION: The Model SWM1400 SP4T PIN Diode switch operates over the full frequency range 0.50-18.0 GHz in a single unit. KDI/Triangle has integrated microstrip soft
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SWM1400
MIL-STD-883.
MODELSWM1400
-C-39012.
SWM1400
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