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    SM-8 BIPOLAR TRANSISTOR Search Results

    SM-8 BIPOLAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    SM-8 BIPOLAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ZHB6718

    Abstract: 12 mje t 5029 npn transistor footprint NPN/PNP transistor sot223 partmarking 6 C ZHB6718 TYPICAL APPLICATION transistor bf 44 NPN SINGLE transistors ssot-6 E4
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718


    Original     		ZHB6718 OT223) ZHB6718 12 mje t 5029 npn transistor footprint NPN/PNP transistor sot223 partmarking 6 C ZHB6718 TYPICAL APPLICATION transistor bf 44 NPN SINGLE transistors ssot-6 E4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6792


    Original     		ZHB6792 OT223) PDF

    SM-8 BIPOLAR TRANSISTOR

    Abstract: 4420 Transistor TP4030 ZHB6792 500mA H-bridge
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6792


    Original     		ZHB6792 OT223) SM-8 BIPOLAR TRANSISTOR 4420 Transistor TP4030 ZHB6792 500mA H-bridge PDF

    ZHB6790

    Abstract: 500mA H-bridge NPN/PNP transistor sot223 partmarking 6 C BR27 npn-pnp dual SM-8 BIPOLAR TRANSISTOR
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790


    Original     		ZHB6790 OT223) ZHB6790 500mA H-bridge NPN/PNP transistor sot223 partmarking 6 C BR27 npn-pnp dual SM-8 BIPOLAR TRANSISTOR PDF

    h6718

    Abstract: bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718


    Original     		ZHB6718 OT223) h6718 bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790


    Original     		ZHB6790 OT223) PDF

    ZHB6790

    Abstract: diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790


    Original     		ZHB6790 OT223) ZHB6790 diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual PDF

    Untitled

    Abstract: No abstract text available
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718


    Original     		ZHB6718 OT223) PDF

    Untitled

    Abstract: No abstract text available
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIM INARY DATA SH EET ISS U E B JU LY 1997 FEATURES * Compact package * * * * Low on state losses Low drive requirem ents Operates up to 40V supply 2 A m p continuous rating ^ L J SM-8 8 LEAD SOT223 PARTMARKING DETAIL - ZHB6790


    OCR Scan     		ZHB6790 OT223) PDF

    VQE24

    Abstract: No abstract text available
    Text: TO SH IB A GT8Q102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 Q 1 0 2 (SM) HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATINGS UNIT Collector-Emitter Voltage VCES 1200


    OCR Scan     		GT8Q102 VQE24 PDF

    GT8Q102

    Abstract: No abstract text available
    Text: TO SH IBA GT8Q102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 Q 1 02 (SM) Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10.3MAX. M AXIM UM RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Colleetor-Emitter Voltage


    OCR Scan     		GT8Q102 2-10S2C PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) U n it in mm HIGH PO W ER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS The 3rd G eneration Enhancem ent-Mode H ig h Speed : tf =0.30^8 (M ax.)


    OCR Scan     		GT10J312 GT10J312, GT10J312 PDF

    zdt749

    Abstract: 6075A ZDT6790 ZDT1049 SM-8 BIPOLAR TRANSISTOR
    Text: Section 5: Bipolar Transistors S a tu r•ationTransistors up to Î 0 0 V o lts L o in Zetex has introduced the SM-8 surface mount package derived from the industry standard SOT223 outline. The SM-8 package features a unique lead fram e design which serves to increase the number of packaged com ponents,


    OCR Scan     		OT223 ZDT717 ZDT749 ZDT6718 ZDT6790 6075A ZDT1049 SM-8 BIPOLAR TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: GT20G101 SM T O S H IB A GT 2 0 G1 01 ( SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V0g (s a t)~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive


    OCR Scan     		GT20G101 PDF

    GT8Q102

    Abstract: No abstract text available
    Text: GT8Q102 SM TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 Q 1 0 2 (S M) HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATINGS UNIT Colleetor-Emitter Voltage


    OCR Scan     		GT8Q102 2-10S2C PDF

    GT8Q102

    Abstract: No abstract text available
    Text: TOSHIBA GT8Q102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 Q 1 0 2 (S M) Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Colleetor-Emitter Voltage


    OCR Scan     		GT8Q102 2-10S2C 150il PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT8Q102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 Q 1 0 2 (S M) Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10.3M AX. 1.32 MAXIMUM RATINGS (Ta = 25°C) oi—i SYMBOL RATING CHARACTERISTIC


    OCR Scan     		GT8Q102 PDF

    GT8J102

    Abstract: PFE13
    Text: TOSHIBA GT8J102 SM G T 8 J 1 0 2 (S M) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR O HIGH POWER SWITCHING APPLICATIONS. O MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed Low Saturation Voltage Enhancement-Mode SILICON N CHANNEL IGBT


    OCR Scan     		GT8J102 2-10S2C PFE13 PDF

    k168

    Abstract: GT8J102
    Text: TOSHIBA GT8J102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 8 J 1 0 2 (S M) HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed tf=0.35/¿s (Max.) • Low Saturation Voltage


    OCR Scan     		GT8J102 2-10S2C k168 PDF

    GT8J102

    Abstract: No abstract text available
    Text: TO SH IBA GT8J102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 8 J 1 0 2 (S M) HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed Low Saturation Voltage Enhancement-Mode


    OCR Scan     		GT8J102 2-10S2C PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A GT8J102 SM G T 8 J 1 0 2 (S M) TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10.3M AX. 1.32 • • • • High Input Impedance High Speed : tf= 0.35^8 (Max.)


    OCR Scan     		GT8J102 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT8J102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 8 J 1 0 2 (S M) Unit in mm O HIGH POWER SWITCHING APPLICATIONS. O MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed Low Saturation Voltage


    OCR Scan     		GT8J102 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A GT8Q102 SM TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL M O S TYPE G T 8 Q 1 0 2 (S M) HIGH POWER SW ITCHING APPLICATIONS. Unit in mm M O TO R CONTROL APPLICATIONS. M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTICS Collector-Emitter Voltage


    OCR Scan     		GT8Q102 3000i PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A G T1 5 J1 0 3 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 1 5 J 1 0 3 (S M) Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10.3M AX. 1.32 • • • • High Input Impedance High Speed : tf= 0.35^8 (Max.)


    OCR Scan     		PDF