SL6 TRANSISTOR Search Results

SL6 TRANSISTOR

Abstract: Hitachi Transistor Hitachi DSA002746
Contextual Info: 2SC5081 Silicon NPN Epitaxial Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline CMPAK–4 4 3 1 2 1. Collector

SL6 TRANSISTOR

Abstract: transistor hitachi
Contextual Info: 2SC5081 Silicon NPN Epitaxial Transistor HITACHI A pplication VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ. NF = 1.1 dB typ at f = 900 MHz O utline CMPAK-4 , 2 1. 2.

SL6 TRANSISTOR

Abstract: hitachi power transistor
Contextual Info: 2SC5081 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline C M P A K -4 £ ! S a!l!tlQr £

FHX35LG

Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
Contextual Info: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.

SL6 TRANSISTOR

Abstract: Transistor D 799 Hitachi DSA002746
Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 3 1 2 1. Collector

SL6 TRANSISTOR

Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ. NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 • 1. 2. 3.

FHX35

Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
Contextual Info: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.

transistor 1345

Abstract: FHR02X FHX02X GaAs FET HEMT Chips
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

smd transistor marking SL6

Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 6533 SMD smd diode marking sG TRANSISTOR HK SMD hitachi transistor marking sg smd code SMD code E2 2SC5700
Contextual Info: HTT1213E Silicon NPN Epitaxial Twin Transistor ADE-208-1449 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor

FHR02X

Abstract: FHX02X GaAs FET HEMT Chips
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

high power FET transistor s-parameters

Abstract: FHR02X FHX02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

FHX02X

Abstract: GaAs FET HEMT Chips FHR02X transistor hemt
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

transistor hitachi

Abstract: HITACHI VC-6045
Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 1 ! S a!l!tlQr £

GaAs FET HEMT Chips

Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

eudyna GaAs FET RF Transistor

Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet
Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor

eudyna GaAs FET RF Transistor

Contextual Info: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor

Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended

fujitsu hemt

Abstract: FHX35X rm 702 627
Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended

FHR02FH

Abstract: fujitsu hemt
Contextual Info: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=18GHz High Associated Gain: 8.5dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor(HEMT) intended for

FHX45X

Abstract: high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt
Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor

2SA1960

Abstract: 2SC5225 Hitachi DSA00396
Contextual Info: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features

Contextual Info: FHR20X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg ² 0.15µm, Wg = 100µm Gold Gate Metallization for High Reliability DESCRIPTION The FHR20X is a Super High Electron Mobility Transistor

J-2-502

Contextual Info: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor

fujitsu hemt

Abstract: TM 1628 FHX45X high power FET transistor s-parameters GaAs FET HEMT Chips
Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor