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    SL6 TRANSISTOR Search Results

    SL6 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SL6 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SL6 TRANSISTOR

    Abstract: Hitachi Transistor Hitachi DSA002746
    Text: 2SC5081 Silicon NPN Epitaxial Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline CMPAK–4 4 3 1 2 1. Collector


    Original     		PDF 2SC5081 ICBO4005-1835 D-85622 SL6 TRANSISTOR Hitachi Transistor Hitachi DSA002746

    FHX35LG

    Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
    Text: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.


    Original     		PDF FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 FCSI0598M200 FHX35LG FHX35 fujitsu hemt fujitsu gaas fet hemt low noise die

    SL6 TRANSISTOR

    Abstract: Transistor D 799 Hitachi DSA002746
    Text: 2SC5080 Silicon NPN Epitaxial Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 3 1 2 1. Collector


    Original     		PDF 2SC5080 D-85622 SL6 TRANSISTOR Transistor D 799 Hitachi DSA002746

    FHX35

    Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
    Text: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.


    Original     		PDF FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 Co4888 FHX35 eudyna FHX35LG hemt low noise die fujitsu gaas fet

    transistor 1345

    Abstract: FHR02X FHX02X GaAs FET HEMT Chips
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 transistor 1345 FHR02X GaAs FET HEMT Chips

    smd transistor marking SL6

    Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 6533 SMD smd diode marking sG TRANSISTOR HK SMD hitachi transistor marking sg smd code SMD code E2 2SC5700
    Text: HTT1213E Silicon NPN Epitaxial Twin Transistor ADE-208-1449 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor


    Original     		PDF HTT1213E ADE-208-1449 2SC5700 D-85622 D-85619 smd transistor marking SL6 SMD MARKING CODE hitachi SMD MARKING CODE sg 6533 SMD smd diode marking sG TRANSISTOR HK SMD hitachi transistor marking sg smd code SMD code E2 2SC5700

    FHR02X

    Abstract: FHX02X GaAs FET HEMT Chips
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		PDF FHR02X 18GHz FHX02X 4-22GHz FHR02X GaAs FET HEMT Chips

    high power FET transistor s-parameters

    Abstract: FHR02X FHX02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 high power FET transistor s-parameters FHR02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip

    FHX02X

    Abstract: GaAs FET HEMT Chips FHR02X transistor hemt
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		PDF FHR02X 18GHz FHX02X 4-22GHz GaAs FET HEMT Chips FHR02X transistor hemt

    GaAs FET HEMT Chips

    Abstract: No abstract text available
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 GaAs FET HEMT Chips

    Untitled

    Abstract: No abstract text available
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		PDF FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200

    eudyna GaAs FET RF Transistor

    Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		PDF FHX45X 12GHz FHX45X 2-18GHz eudyna GaAs FET RF Transistor high frequency transistor ga as fet transistor on 4959 eudyna fet

    eudyna GaAs FET RF Transistor

    Abstract: No abstract text available
    Text: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor


    Original     		PDF FHX13X, FHX14X 12GHz FHX13) 12GHz FHX14X 2-18GHz eudyna GaAs FET RF Transistor

    Untitled

    Abstract: No abstract text available
    Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		PDF FHX35X 12GHz FHX35X 2-18GHz

    FHR02FH

    Abstract: fujitsu hemt
    Text: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=18GHz High Associated Gain: 8.5dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor(HEMT) intended for


    Original     		PDF FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 fujitsu hemt

    FHX45X

    Abstract: high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		PDF FHX45X 12GHz FHX45X 2-18GHz high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt

    2SA1960

    Abstract: 2SC5225 Hitachi DSA00396
    Text: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features


    Original     		PDF 2SC5225 ADE-208-393 2SA1960. 2SA1960 2SC5225 Hitachi DSA00396

    Untitled

    Abstract: No abstract text available
    Text: FHR20X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg ² 0.15µm, Wg = 100µm Gold Gate Metallization for High Reliability DESCRIPTION The FHR20X is a Super High Electron Mobility Transistor


    Original     		PDF FHR20X 18GHz FHR20X 2-30GHz FCSI0598M200

    J-2-502

    Abstract: No abstract text available
    Text: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor


    Original     		PDF FHX13X, FHX14X 12GHz FHX13) 12GHz FHX14X 2-18GHz FCSI0598M200 J-2-502

    fujitsu hemt

    Abstract: TM 1628 FHX45X high power FET transistor s-parameters GaAs FET HEMT Chips
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		PDF FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200 fujitsu hemt TM 1628 high power FET transistor s-parameters GaAs FET HEMT Chips

    SL6 TRANSISTOR

    Abstract: transistor hitachi
    Text: 2SC5081 Silicon NPN Epitaxial Transistor HITACHI A pplication VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ. NF = 1.1 dB typ at f = 900 MHz O utline CMPAK-4 , 2 1. 2.


    OCR Scan     		PDF 2SC5081 D-85622 SL6 TRANSISTOR transistor hitachi

    SL6 TRANSISTOR

    Abstract: hitachi power transistor
    Text: 2SC5081 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline C M P A K -4 £ ! S a!l!tlQr £


    OCR Scan     		PDF 2SC5081 SL6 TRANSISTOR hitachi power transistor

    SL6 TRANSISTOR

    Abstract: No abstract text available
    Text: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ. NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 • 1. 2. 3.


    OCR Scan     		PDF 2SC5080 D-85622 SL6 TRANSISTOR

    transistor hitachi

    Abstract: HITACHI VC-6045
    Text: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 1 ! S a!l!tlQr £


    OCR Scan     		PDF 2SC5080 transistor hitachi HITACHI VC-6045