SL 100 NPN TRANSISTOR BASE EMITTER COLLECTOR Search Results

SL 100 NPN TRANSISTOR BASE EMITTER COLLECTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

SL 100 NPN TRANSISTOR BASE EMITTER COLLECTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: KSC1845 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY LOW NOISE AMPLIFIER TO -92 • Complement to KSA992 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	KSC1845 KSA992	PDF
SL 100 NPN Transistor Abstract: transistor B 560 SL 100 NPN Transistor base emitter collector 2SD1865 Text: 2SD1865 Transistor, NPN Features Dimensions Units : mm • available in ATV TV2 package • low collector saturation voltage, typically VCE/Sat) = 0.006 V at lc /lB = 1 mA/0.1 mA 2SD1865 (ATV TV2) • suitable for low-voltage large current drivers • high dc current gain and large current	OCR Scan	2SD1865 2SD1865 SL 100 NPN Transistor transistor B 560 SL 100 NPN Transistor base emitter collector	PDF
equivalent of SL 100 NPN Transistor Abstract: Transistor transistor a 92 a 331 transistor 711 "SAMSUNG SEMICONDUCTOR" Text: SAMSUNG SEMICONDUCTOR 14E INC D » 711, 4142 OOOTbSO fl NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5005 COLOR TV HORIZONTAL' OUTPUT APPLICATIONS TO-3P HIQH Collector-Base Voltage Vc*o=1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage	OCR Scan	KSD5005 GQG77fe equivalent of SL 100 NPN Transistor Transistor transistor a 92 a 331 transistor 711 "SAMSUNG SEMICONDUCTOR"	PDF
BLU99 Abstract: BLU99/TDA3619/on4800 Text: i, One, tv TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f.	Original	BLU99 BLU99/SL BLU99 OT122A) BLU99/SL OT122D) BLU99/TDA3619/on4800	PDF
Untitled Abstract: No abstract text available Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor MJ12004 DESCRIPTION • Collector-Emitter VoltageV CE x= 1500V • Safe Operation Area • Switching Time with Inductive Load	Original	MJ12004	PDF
Untitled Abstract: No abstract text available Text: <^/V , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6834 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(sus)=450V(Min) • High Switching Speed	Original	2N6834 10MHz	PDF
sot172 Abstract: No abstract text available Text: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures	OCR Scan	BLV99/SL OT172 -SOT172D MDB012 7Z94685 sot172	PDF
SL 100 NPN Transistor Abstract: SL 100 NPN Transistor base emitter collector blv99 transistor sl 100 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES BLV99/SL PIN CONFIGURATION • Emitter-ballasting resistors for an optimum temperature profile	Original	BLV99/SL OT172D MSB007 MBB01 SL 100 NPN Transistor SL 100 NPN Transistor base emitter collector blv99 transistor sl 100	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE bb53^31 DQ28761 715 • IAPX BLT92/SL bTE J> UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.	OCR Scan	DQ28761 BLT92/SL OT122D)	PDF
122d transistor Abstract: SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLU11/SL OT-122D) 122d transistor SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector	PDF
SL 100 NPN Transistor base emitter collector Abstract: mda301 BLT92 MDA300 SL 100 NPN Transistor SL 100 power transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz	Original	BLT92/SL SL 100 NPN Transistor base emitter collector mda301 BLT92 MDA300 SL 100 NPN Transistor SL 100 power transistor	PDF
SL 100 NPN Transistor base emitter collector Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE D • bbSB^Bl □□ETl'lb b4ä H A P X _ Product specification Philips Semiconductors_ BLV99/SL UHF power transistor PIN CONFIGURATION FEATUR ES • Emitter-ballasting resistors for an optimum temperature profile	OCR Scan	BLV99/SL OT172D UB8012 OT172D 7Z94G85 SL 100 NPN Transistor base emitter collector	PDF
SL 100 NPN Transistor base emitter collector Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN Text: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code \|E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,	OCR Scan	2SD2114K SC-59) 2SD2114K; 12rves 2SD2114K SL 100 NPN Transistor base emitter collector SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.	OCR Scan	bbS3T31 BLU99 BLU99/SL OT122A) BLU99/SL OT122D)	PDF

ferrite 4312 Abstract: ferrite beat philips rf choke ferrite CF-800 lb533 Text: N AMER PHILIPS/DISCRETE tTE J> ^53=131 DDEÔ761 71S M A P X WÊ BLT92/SL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.	OCR Scan	BLT92/SL OT122D) ferrite 4312 ferrite beat philips rf choke ferrite CF-800 lb533	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 0D2B774 565 « A P X BLT91/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.	OCR Scan	bbS3T31 0D2B774 BLT91/SL OT-172D)	PDF
BLV91 Abstract: ferroxcube 1988 mda406 MDA401 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in	Original	BLV91/SL OT-172D) BLV91 ferroxcube 1988 mda406 MDA401	PDF
SL 100 NPN Transistor Abstract: T1 SL 100 NPN Transistor BULD25SL of transistor sl 100 BULD25D BULD25DR SL 100 NPN Transistor base emitter collector VCBo-600V Text: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-parallel Diode, Enhancing Reliability ●	Original	BULD25D, BULD25DR, BULD25SL SL 100 NPN Transistor T1 SL 100 NPN Transistor BULD25SL of transistor sl 100 BULD25D BULD25DR SL 100 NPN Transistor base emitter collector VCBo-600V	PDF
2N6547 Abstract: 2N654 12 volt 200 Amp PWM 2N6546 Text: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS The 2N6546 and 2N6547 transistors are designed for high- NPN 2N6546 2N6547 voltage .high-speed,power switching inductive circuits where fail time is criticai.they are particularly, suited for 115 and 220 volt line	OCR Scan	2N6546 2N6547 2N6546 2N654? 2N654Speratures, F0R2N6546 VCFXARE100 2N6S46, 2N654 12 volt 200 Amp PWM	PDF
D008 Abstract: SL 100 NPN Transistor Text: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-parallel Diode, Enhancing Reliability •	OCR Scan	BULD25D, BULD25DR, BULD25SL D008 SL 100 NPN Transistor	PDF
ITT 2222 npn Abstract: ITT 2222 A itt 2222 blu99 transistor SL 100 NPN Transistor "2222 352" 4312 020 36642 BLU99 ferroxcube wideband hf choke SOT122A Text: N AMER P H I L I P S / D I S C R E T E blE D • bbâB^Bl DDEfifiRQ btH ■ IAPX Jl BLU 99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.	OCR Scan	BLU99/SL BLU99 OT122A) BLU99/SL OT122D) ITT 2222 npn ITT 2222 A itt 2222 blu99 transistor SL 100 NPN Transistor "2222 352" 4312 020 36642 ferroxcube wideband hf choke SOT122A	PDF
MDA380 Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352" Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLU99 BLU99/SL BLU99 OT122A) BLU99/SL MDA380 4312 020 36642 MDA385 TRANSISTOR SL 100 "2222 352"	PDF
Si 122D Abstract: 122d transistor BLU11/Si 122D Text: N AMER PHILIPS/DISCRETE b^Z b b 5 3 c]31 G0Eflfl03 10b BIAPX T> BLU11/SL J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band. Features • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.	OCR Scan	bb53c G0Eflfl03 BLU11/SL OT-122D) BLU11/SL Si 122D 122d transistor BLU11/Si 122D	PDF
NE24318 Abstract: No abstract text available Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by	OCR Scan	NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499 IS12I NE24318	PDF

SL 100 NPN TRANSISTOR BASE EMITTER COLLECTOR Search Results

SL 100 NPN TRANSISTOR BASE EMITTER COLLECTOR Result Highlights (5)

SL 100 NPN TRANSISTOR BASE EMITTER COLLECTOR Datasheets Context Search

Untitled

SL 100 NPN Transistor

equivalent of SL 100 NPN Transistor

BLU99

Untitled

Untitled

sot172

SL 100 NPN Transistor

Untitled

122d transistor

SL 100 NPN Transistor base emitter collector

SL 100 NPN Transistor base emitter collector

SL 100 NPN Transistor base emitter collector

Untitled

ferrite 4312

Untitled

BLV91

SL 100 NPN Transistor

2N6547

D008

ITT 2222 npn

MDA380

Si 122D

NE24318