SL 100 NPN TRANSISTOR BASE EMITTER COLLECTOR Search Results

Contextual Info: KSC1845 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY LOW NOISE AMPLIFIER TO -92 • Complement to KSA992 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

SL 100 NPN Transistor

Abstract: transistor B 560 SL 100 NPN Transistor base emitter collector 2SD1865
Contextual Info: 2SD1865 Transistor, NPN Features Dimensions Units : mm • available in ATV TV2 package • low collector saturation voltage, typically VCE/Sat) = 0.006 V at lc /lB = 1 mA/0.1 mA 2SD1865 (ATV TV2) • suitable for low-voltage large current drivers • high dc current gain and large current

equivalent of SL 100 NPN Transistor

Abstract: Transistor transistor a 92 a 331 transistor 711 "SAMSUNG SEMICONDUCTOR"
Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC D » 711, 4142 OOOTbSO fl NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5005 COLOR TV HORIZONTAL' OUTPUT APPLICATIONS TO-3P HIQH Collector-Base Voltage Vc*o=1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage

BLU99

Abstract: BLU99/TDA3619/on4800
Contextual Info: i, One, tv TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f.

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor MJ12004 DESCRIPTION • Collector-Emitter VoltageV CE x= 1500V • Safe Operation Area • Switching Time with Inductive Load

Contextual Info: <^/V , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6834 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(sus)=450V(Min) • High Switching Speed

sot172

Contextual Info: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures

SL 100 NPN Transistor

Abstract: SL 100 NPN Transistor base emitter collector blv99 transistor sl 100
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES BLV99/SL PIN CONFIGURATION • Emitter-ballasting resistors for an optimum temperature profile

Contextual Info: N AUER PHILIPS/DISCRETE bb53^31 DQ28761 715 • IAPX BLT92/SL bTE J> UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.

122d transistor

Abstract: SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

SL 100 NPN Transistor base emitter collector

Abstract: mda301 BLT92 MDA300 SL 100 NPN Transistor SL 100 power transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz

SL 100 NPN Transistor base emitter collector

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSB^Bl □□ETl'lb b4ä H A P X _ Product specification Philips Semiconductors_ BLV99/SL UHF power transistor PIN CONFIGURATION FEATUR ES • Emitter-ballasting resistors for an optimum temperature profile

SL 100 NPN Transistor base emitter collector

Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN
Contextual Info: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code |E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,

Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.

ferrite 4312

Abstract: ferrite beat philips rf choke ferrite CF-800 lb533
Contextual Info: N AMER PHILIPS/DISCRETE tTE J> ^53=131 DDEÔ761 71S M A P X WÊ BLT92/SL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 0D2B774 565 « A P X BLT91/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.

BLV91

Abstract: ferroxcube 1988 mda406 MDA401
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in

SL 100 NPN Transistor

Abstract: T1 SL 100 NPN Transistor BULD25SL of transistor sl 100 BULD25D BULD25DR SL 100 NPN Transistor base emitter collector VCBo-600V
Contextual Info: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-parallel Diode, Enhancing Reliability ●

2N6547

Abstract: 2N654 12 volt 200 Amp PWM 2N6546
Contextual Info: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS The 2N6546 and 2N6547 transistors are designed for high- NPN 2N6546 2N6547 voltage .high-speed,power switching inductive circuits where fail time is criticai.they are particularly, suited for 115 and 220 volt line

D008

Abstract: SL 100 NPN Transistor
Contextual Info: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-parallel Diode, Enhancing Reliability •

ITT 2222 npn

Abstract: ITT 2222 A itt 2222 blu99 transistor SL 100 NPN Transistor "2222 352" 4312 020 36642 BLU99 ferroxcube wideband hf choke SOT122A
Contextual Info: N AMER P H I L I P S / D I S C R E T E blE D • bbâB^Bl DDEfifiRQ btH ■ IAPX Jl BLU 99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.

MDA380

Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

Si 122D

Abstract: 122d transistor BLU11/Si 122D
Contextual Info: N AMER PHILIPS/DISCRETE b^Z b b 5 3 c]31 G0Eflfl03 10b BIAPX T> BLU11/SL J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band. Features • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.

NE24318

Contextual Info: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by