TL018
Abstract: 5334S SLR-54UT SLR-54dc TLR134AP TLRA245P TLRC182P TLRC241P TLS133AP TLS241P
Text: 6 i p ÏS « £ it T .,= 25'C ' * * « « •d t V* :V i If im A ÌF Vh 'm A : ¡V! \0 2 f.r. Ar m m : imcd' imA ! f t k % fc >7 , = 2d C ' & i16i 9L'± is « r r n -P T L SA 180A P & i£ 8 630 1000 20 1.9 20 50 4 '3 0 '8 5 84 630m m S ¡*f iS T L R A 245P
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OCR Scan
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TLSA180AP
TLRA245P
TLS241P
TLRC241P
TLR133AP
TLR134AP
TLRC182P
TLS133AP
TLS134AP0
SLR-55DC
TL018
5334S
SLR-54UT
SLR-54dc
TLR134AP
TLRA245P
TLRC182P
TLRC241P
TLS133AP
TLS241P
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PDF
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TLR143
Abstract: TLUR143 TLR113A TLR113 TLR144 TLRA134A TLRA155BP TLRC180AP EBR5305S TLS144
Text: 15 £ ï * ft fi 7 •ff- BR5385X PR5385X # itî « ¡« ¡Ä 18* deg. ; 7 . = 25‘C T.= 25C'1 # > x>- /i I y 'm A' Vf If !V ■ ' :mA¡ m r± m ;m A ; ;V : ■*C' 140 660 6 20 1.7 20 50 4 —30 —85 79 Flat Top 140 700 0.9 10 2.1 10 30 4 —30 —85 79
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OCR Scan
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BR5385X
PR5385X
VR5385X
EBR5304S
PR5304S
EVR5304S
VR5304S
EBR5334S
PR5334S
EVR5334S
TLR143
TLUR143
TLR113A
TLR113
TLR144
TLRA134A
TLRA155BP
TLRC180AP
EBR5305S
TLS144
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PDF
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BA1A4M-T
Abstract: BA1A4M 3773A T108 ptc T108 t0429
Text: X — ^ • S/— h ÎH 'ê ' V -y > i> Com pound Transistor BAI A 4 M ÍS Íjt F * 3 Ü N P N x t : ^ + ' > T ; u ^ ' > y £|- ff¿l2 ] ¥ 4 5 1 i t o ^ ' i T : m m i X i £ Î Æ £ 1* 1 /1 L t i ' l t c ( R j = 1 0 ki2, R 2= 1 0 kQ) O B N 1A 4M ¿ 3 > f i ]
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OCR Scan
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PWS10
CycleS50
i0992
BA1A4M-T
BA1A4M
3773A
T108 ptc
T108
t0429
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PDF
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BA1A4P
Abstract: T108 02-WM RSL AH transistorBA1A4P
Text: r NEC i? f/ \ T A 5 ? — 57 • 5 /— b Compound Transistor BA1A4P ¡g N P N j : t ? ? * '> T JU S fe t # l 3 V V=7> i> X ? it '• mm) ★ Ri = 10 kQ, R2= 47 kQ) o BN1A4P T è t ~t0 lfe;ki*^#(Ta = 25 °C) II n u s ? 9 ?T 3 W ± . v i ; 7 y 3 u 3 ^ ^ ^
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OCR Scan
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CycleS50
BA1A4P
T108
02-WM
RSL AH
transistorBA1A4P
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PDF
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T108
Abstract: TC-6241
Text: ÎH'ra'h Com pound Transistor GA1 L3M 4W H !» S / nM o L T W î : mm v ^ f , ( R i = 4 . 7 k£2, R 2 = 4 . 7 kfì) O — V W - R, o G N 1 L 3 M £ =j > 7 ° >J y > 9 ‘J T ' ê Ò E S (T a = 25 °C ) I l 3 9 u a u 3 - 3 • 9 9 i /H g 9 •/ 9 — V cE O
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OCR Scan
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PDF
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MT460
Abstract: TI08 marking ti08 27ie fg m 004 26 01 3905g F0429 0429
Text: S t • 2 /— K NEC m • Compound Transistor /V t 7L ï t GA1A4Z *m ft m W B 0 o L 7 X |j £ # t £ T ^ W Ì : mm) t < ( R i = 10 k Q ) OE t O G N 1A 4Z ^ >7° U / ]) T '£ t t ( fÊ * h ft* 5 Ë fê (Ta = 25 °C) II 3 u ? ^ x - l ^ . - < _ x ^ 'E G E
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OCR Scan
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PWS10
SXISC06)
MT460
TI08
marking ti08
27ie
fg m 004 26 01
3905g
F0429
0429
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PDF
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2SC3734
Abstract: odv marking
Text: NEC Ì ^ Silicon Tran sistor f / \ f 7 2SC3734 n p n i e ¡ u n ì & 9 * ì/ ~ n v W m m & £ 9 iis i; zi v b v ' ^ m j g X ' i ' y * > 7 ' m NPN Silicon Epitaxial Transistor High Frequency Amplifier and Switching »«/FEA TU RES PACKAGE DIMENSIONS U nit : m m
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OCR Scan
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2SA14611
2SC3734
odv marking
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PDF
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L0742
Abstract: L0742 81 MPA1452H TL08 T460 IC-6338 093L
Text: SEC j m = f T / x r x m 'ê r y < r7 - b ^ X ^ C o m p o u n d P o w e r T ra n s is to r A / N P N l t ° ^ + '> 7 ; ^ / P ij = l > Ï '> A 1 4 5 2 H U>{ I i f f l NPN Silicon Epitaxial Transistor High Speed Switching Industrial Use DC —DC 3 > / < — 9 •V U / 4 Y ■* - ? • U u - • 7 > 7 ° t c
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OCR Scan
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MPA1452H
13X26X4
L0742
L0742 81
MPA1452H
TL08
T460
IC-6338
093L
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PDF
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SKs TRANSISTOR
Abstract: 2SK661 00GE GE 6226
Text: NEC iïf/ÿfx Ju n ctio n Field Effect Transistor 2SK661 E C M 'O h i m m m ¥ fi:m m m 2. 9 ± 0. 2 l l +0'2 1. 90 i - i -o .i o g m 0.8 o r - 0.45- -0 .4 5 M W . i k A $ $ < 7 ) A L h ± t f ») HR Z l ï S i l j II *& K v 'f > • y - x IS U K *f — h
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OCR Scan
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2SK661
Effl85-3Ã
SKs TRANSISTOR
2SK661
00GE
GE 6226
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PDF
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2SB1116
Abstract: 2SD1616 2SD1616A PA33
Text: NEC l i r / \ T X J , S ilic o n 2 N P N l S J f2 '> U □ > D h ^ 1 6 1 6 , 1 T r a n s is t o r s 6 1 6 A ^ NPN Silicon Epitaxial T ra n s is to r Audio Frequency Pow er A m p lifie r M edium Speed S w itching ^ /F E A T U R E S * H B @ /P A C K A G E DIMENSIONS
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OCR Scan
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2SD1616
2SB1116,
2SD1616A
PWS10
CycleS50
2SB1116
2SD1616A
PA33
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PDF
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Untitled
Abstract: No abstract text available
Text: Compound Transistor G Σ ÎÆ f* 3 M P N P ^ ft I M 1 L 4 M > ' 3 > : mm) m o A<'f T X IE in; £ f*aM L T ^ i 1 0 Ri = 47 kQ, R 2= 47 kQ) c B o—V A — Ri —V v \ —'* Rs o E OGA1L4M t =? >7° IJ / > 9 U M arking (T a —25 °C ) *1 a v 9 •3 v 9 9
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OCR Scan
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Ta-25
PWS10
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PDF
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sa0565
Abstract: BAIF4M BA1F4M
Text: r IV E C ^?T/\f7 ir S * S'—b a-g-h^ Compound Transistor BA1 F4M i£StrtlNPNxti?*'>7rJU •' m m ★ o T x iS f it £ L T ^ £ -to 4.0 ±0.2 6” R i = 22 k fi, R 2= 22 k f i ) 2 6’ -0.50 O B N 1 F 4 M £ =7 > 7 °'J / > ? U « ^ i # ( T a = n 25 °C )
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OCR Scan
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PDF
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Triac t460
Abstract: JE 33 H112 T210 T460 X108 triac BT 0266 8P2SM
Text: •y — S NEC i Ï T / V f Z r J — «F h A Tc=88°C ¿OfÎItlÊIW TRIACT'fo —;u K T H b tL , ltìl<hlE^È^ÌclÈii:£;flTv>i;1~60T'', i)l> fé ^ S C R a t < t è fëtë, 2 /— 8P2SM, 8P4SM 8P2SMA, 8P4SMA 8Pr jSM, 8Pr jSMA (i, ^ ^ > » 8 IJ — •
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OCR Scan
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O-220AB'
oTO-220AB
Triac t460
JE 33
H112
T210
T460
X108
triac BT 0266
8P2SM
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PDF
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UPD74HC08
Abstract: lt 420 sf 50 gg FE8B
Text: SEC M o s s i im s s M O S In te g ra te d C ircu it iiT / \ f 7 PD74HC08 QUAD 2 -IN P U T AND G A TE mo c s jii iit m U ¿ 0 - 5 1 t L T H fiP S? tl/tQ U A D 2 -IN P U T AND r - K ^ P D 7 4 H C 0 8 ii, M C M O S n y . y ; 7 r i y •9L S T T L ' j a ^ r -
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OCR Scan
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uPD74HC08
/iuPD74HC08C
/iuPD74HC08G
uPD74HC08G-T1
lt 420 sf 50 gg
FE8B
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PDF
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diode e5f
Abstract: 2SK827 TL08 T108 Scans-0088188
Text: M O S Field E ffe c t P o w e r T r a n s is t o r MOS FET n m 2 S K 827 ü , m m fi& < , N x f t i w i , x > A > >r •/ f - > x / n > r h a m M O S > , is js m x ^ F E T v ^ > > r * T O , : mm) 0 3 .2 ± 0 .2 D C -D C a 15.7 MAX. 4 . 7 M AX. Z 1.5
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OCR Scan
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2SK827
diode e5f
2SK827
TL08
T108
Scans-0088188
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PDF
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transistor A916
Abstract: YC07 2SA916 A916 transistor
Text: Ml ^ _h >u fry N IH ph * an O f * u $ £ a c 3i w FFI FFI FH •ft H*"* p < C< O O s 2 *? / <T> Vr C" C~ 4 * m m pi m ps pif sr sr > < 7] M C O 03 CD O w s O m cjn BA tSD h-H o""1 < < O 0C< O II 11 M II II 1 1 N5 1 1 1 C O tO ]. O 3 3 < < > > < , , , , 1—1 1—1 HH
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OCR Scan
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2SA916
2SC194U
transistor A916
YC07
2SA916
A916 transistor
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PDF
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BT 815 transistor
Abstract: Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108
Text: NEC l i f A I / 1] Silicon Tran sistor i i f X 2SA1625 PNP = S il£ i PNP Silicon Triple Diffused Transistor High Speed, High Voltage Switching mm O i^ ii E t 'C 'i'o V Ce o = - 4 0 0 ^ -fi • mm V V CE(sat)^ - 0 .5 V O T A 7 f s tf — 1 . 0 (T a — m
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OCR Scan
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2SA1625
PWS300
SC-43B
BT 815 transistor
Transistor BFR 96
pt 4115
2SA1625
PA33
T108
X108
ih 0565 r
EI 33
LX108
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PDF
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2SK659
Abstract: TC-6071
Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #
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OCR Scan
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2SK659
2SK659Ã
2SK659
TC-6071
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PDF
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FZ 300 R 06 KL
Abstract: PA1603 Transistor NP 3773 TRANSISTOR PHL 641 PA1603CX uPA1603 L0734 IS352 l 0734
Text: ^ • J Ê S Ù * ^ 0 ,7 - Com pound Field Effect P o w e r Transistor " ^ y /¿PA1603 à, i y A 1 6 3 \ or7“ - MO S F E T 'Z U H ' MOS F E T h m iÜ M tfifr & & Ô 4 / g -> -y ? '*7 - MOS F E T 7 W T - , ïü f f ln i^ .y ÿ W f f l ; ÿ > 7 ° 9° O
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OCR Scan
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uPA1603
FZ 300 R 06 KL
PA1603
Transistor NP 3773
TRANSISTOR PHL 641
PA1603CX
L0734
IS352
l 0734
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PDF
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2sk991
Abstract: 2SK9 ASGA 2sk99
Text: MOS M O S Field Effect P ow er Transistor N - ^ * ; i " N or7— M O S FET I i f f l mm 2SK991 ii, Nf-^*;w^i?'"o,7- M 0 S FET T*. 5 V * « * I C <nf t * tw J : & i £ K ï f t * * » T f é ì ' M x ^ y f > ^ x T O : mm t t . 4.8 MAX. -1.3±0.2 y t '/ ' f
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OCR Scan
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2SK991
2SK991
2SK9
ASGA
2sk99
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PDF
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L46R
Abstract: 96 mfu DIODE HR 8665 PA606T PA607T 4N51 5M1E 328l
Text: M O S M O S Field Effect Transistor «PA607T P f t ^ M O S F E T 6 t i > 2 m ^~ ¿ ¿ P A 6 7 T(i, M O SF E T£2Hi1 * 1 /1L * :5- i )V K f ' ^ M X T h 9 , Ü 3 X h <7)ffl 0.32 + 0.1 - 0.05 iJ& te n W tL tto «F a JLH ~ +1 o S C -5 9 0 - 0 .1 MOS £ F E T £ 2 3? i[ * J / l
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OCR Scan
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uPA607T
PA606T
l--62
B484S±
L46R
96 mfu DIODE
HR 8665
PA607T
4N51
5M1E
328l
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PDF
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TT 2206
Abstract: tt 3043 capacitor type 104z 50v transistor tt 2206 capacitor cross reference 104z 50v a5e 104 Y5V 104Z MC 3843 skycap sr40 ultrasonic
Text: www.avx.com AVX Multilayer Ceramic Leaded Capacitors Version 8.1 Contents The Capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-9 Dielectrics C0G NP0 Dielectric “A”. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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Original
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S-MCLC0M1208-C
TT 2206
tt 3043
capacitor type 104z 50v
transistor tt 2206
capacitor cross reference 104z 50v
a5e 104
Y5V 104Z
MC 3843
skycap
sr40 ultrasonic
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PDF
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a5e 104z
Abstract: TT 2206 MIL-PRF-39014 a5e 104 sr40 ultrasonic skycap MX 0541 104K X7R 63 capacitor 1005 0402 ,metric SLA681
Text: www.avx.com AVX Multilayer Ceramic Leaded Capacitors Version 10.10 Contents The Capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-9 Dielectrics C0G NP0 Dielectric “A”. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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Original
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S-MCLC0M1010-C
a5e 104z
TT 2206
MIL-PRF-39014
a5e 104
sr40 ultrasonic
skycap
MX 0541
104K X7R 63 capacitor
1005 0402 ,metric
SLA681
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PDF
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yx 801
Abstract: yx 801 led pjo 489 msc 03906 PD1720 da 9149 PD1711 P19J UPD1704 opa 2143
Text: M OS Îftïf S & M O S In tegrated C ircuit « P /¿PD17P23 i t , E P R O M , 150 MHz £ t ® f l H f ^ y j X * — 7 , P L L ^ i S S x K ? > f '< 1/27*.3 .- f D 1 7 P 2 3 ^t\ I F * •>> ? Ü itA 'L C D 1/2'<4 7 X ÿ 1 ? 'v '7 'lz m ib tz 'r 4 y ^ / ^ f a - - > / M 4 t ‘ 7 F C M O S ^ ? n
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OCR Scan
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uPD17P23
yx 801
yx 801 led
pjo 489
msc 03906
PD1720
da 9149
PD1711
P19J
UPD1704
opa 2143
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PDF
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