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    SKM 300 GAR Search Results

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    SKM 300 GAR Price and Stock

    SEMIKRON SKM300GAR12E4

    Igbt Module, Single, 1.2Kv, 422A; Continuous Collector Current:422A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM300GAR12E4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SKM300GAR12E4 Bulk 12
    • 1 -
    • 10 $164.97
    • 100 $150.83
    • 1000 $150.83
    • 10000 $150.83
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    SEMIKRON SKM300GARL066T

    Igbt Module; Continuous Collector Current:400A; Collector Emitter Saturation Voltage:600V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:900Mv; Transistor Mounting:Panel Rohs Compliant: Yes |Semikron SKM300GARL066T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SKM300GARL066T Bulk 12
    • 1 $533.32
    • 10 $533.32
    • 100 $533.32
    • 1000 $533.32
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    Richardson RFPD SKM300GARL066T 1
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    SEMIKRON SKM300GAR063D

    INSULATED GATE BIPOLAR TRANSISTOR, 400A I(C), 600V V(BR)CES, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SKM300GAR063D 1
    • 1 $91
    • 10 $91
    • 100 $91
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    SEMIKRON SKM300GARL066T 21915370

    Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SKM300GARL066T 21915370 1
    • 1 $424.83
    • 10 $375.53
    • 100 $336.72
    • 1000 $336.72
    • 10000 $336.72
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    SEMIKRON SKM300GAR07E3 22895600

    Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 300A
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    TME SKM300GAR07E3 22895600 1
    • 1 $193.01
    • 10 $169.93
    • 100 $153.15
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    Find more SKM 300 GAR price and stock on Findchips.com

    SKM 300 GAR Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SKM300GAR063D Semikron SEMITRANS M - Superfast NPT-IGBT Module Original PDF
    SKM300GAR063D Semikron Superfast IGBT Modules Original PDF
    SKM300GAR123D Semikron SEMITRANS M - IGBT Module Original PDF
    SKM300GAR123D Semikron IGBT Modules Original PDF

    SKM 300 GAR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    skm400gal125d

    Abstract: SKM400GB125D
    Text: SKM 400GB125D Tc = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT VCES Tj = 25 °C 1200 V IC Tj = 150 °C 400 300 A A ICRM ICRM=2xICnom 600 A ± 20 V Tj = 125 °C 10 µs Tcase = 25 °C Tcase = 80 °C 390


    Original     		PDF 400GB125D 400GAL125D 400GAR125D skm400gal125d SKM400GB125D

    Untitled

    Abstract: No abstract text available
    Text: SKM 300 GARL 066 T Absolute Maximum Ratings Symbol Conditions IGBT 789, .R 2 HI J8 @8 .R 2 GZI J8 .03+ 2 HIJ8W * 5(+ %41(/<-+( +=(0-?-(A YOO 7 NOO [ .0 2 ¥O J8 EOO [ YOO [ ^ HO 7 .R 2 GIO J8 Y b+ .0 2 HI J8 NO [ .0 2 ¥O J8 EO [ YO [ .R 2 GIO J8 GYO [ .0 2 HI J8


    Original     		PDF

    150GB123D

    Abstract: No abstract text available
    Text: SKM 150GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*8 95 1<58+1& = 1  + + 4* /300 Inverse diode SEMITRANSTM 3 IGBT Modules & &(8 1 2 /3 70 4* 2 .  &( 2 .0 A  ?A 1; 2 .30 4* .30 .00 /00 + + .00 + /00 .B3 B00 + +


    Original     		PDF 150GB123D 150GB123D 150GAL123D 150GAR123D

    skm150gb123d

    Abstract: No abstract text available
    Text: SKM 150GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*8 :5 1=58+1& > 1  + + 4* /300 Inverse diode SEMITRANSTM 3 IGBT Modules & &(8 1 2 /3 70 4* 1 2 /3 70 4* 2 .  &( 2 .0 B  @B 1< 2 .30 4* .30 .00 900 //0 + + .00


    Original     		PDF 150GB123D 150GB123D 150GAL123D 150GAR123D skm150gb123d

    08D diode

    Abstract: No abstract text available
    Text: SKM 300 GARL 066 T Absolute Maximum Ratings Symbol Conditions IGBT  3  * + ! 3  ;* +   )*+8       " :00  /00 <   =0 + &00 < :00 < ? )0  3  (*0 + : C   )* + /0 <   =0 + &0 < :0 < 3  (*0 + (:0 <   )* +


    Original     		PDF

    diode A9

    Abstract: A9 diode
    Text: SKM 300 GARL 066 T Absolute Maximum Ratings Symbol Conditions IGBT  3  * + ! 3  6* +   )*+-       " 500  /00 7   80 + &00 7 500 7 < )0  3  (*0 + 5 @   )* + /0 7   80 + &0 7 50 7 3  (*0 + (50 7   )* +


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 300 GARL 066 T Absolute Maximum Ratings Symbol Conditions IGBT  3  * + ! 3  6* +   )*+-       " 500  /00 7   80 + &00 7 500 7 < )0  3  (*0 + 5 @   )* + /0 7   80 + &0 7 50 7 3  (*0 + (50 7   )* +


    Original     		PDF

    SKM300GARL

    Abstract: igbt f 066T
    Text: SKM 300 GARL 066 T Absolute Maximum Ratings Symbol Conditions IGBT  3  * + ! 3  6* +   )*+-       " 500  /00 7   80 + &00 7 500 7 < )0  3  (*0 + 5 @   )* + /0 7   80 + &0 7 50 7 3  (*0 + (50 7   )* +


    Original     		PDF 60ect SKM300GARL igbt f 066T

    SKM 75 Gb 124 IGBT

    Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
    Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON


    Original     		PDF

    skm 152 ga 123

    Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040


    Original     		PDF

    skm 200 GB 12 V

    Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC


    Original     		PDF

    SKM 400 gal 124 IGBT

    Abstract: skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits semikron skm 300 gar 124 IGBT inverter calculation FOR A UPS SKM 150 GB 124 D
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 570 / 400


    Original     		PDF

    SKM 75 GAL 123 IGBT

    Abstract: skm 200 GB 12 V SKM 300 GB 12 V semikron skm 300 gar 123 SKM 300 CIRCUIT GAL 200 gb semikron skm 150 gal skm 125 ga 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C


    Original     		PDF

    semikron skm 300 gar 123

    Abstract: skm 300 gar skm 22 gal 123 SKM 300 GB 123 D 300GB-6 SKM 300 GB 12 V
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


    Original     		PDF

    D73 -Y

    Abstract: skm 75 gb 101 d skm 100 gb 101 d skm 50 gb 100 d semikron skm 300 gar 123 SKM 22 GD 101 D SKM 40 GD 101 D skm 40 gb 123 d SKM 300 CIRCUIT cemi data
    Text: 5EMIKRDN Section 6: SEMITRANS IGBT Modules; New Range 1996 3rd Version: Low Inductance, lower Vc e m . soft and fast CAL diodes11 41 Type 2 VcES 2) lc = 25 °C 0 Teas« = V 1200 SKM 300 GA 123 D 1200 SKM 300 GA 173 D 1700 SKM 400 G A 123 D 5) 1200 SKM 400 G A 173 D 5> 1700


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    Untitled

    Abstract: No abstract text available
    Text: SKM 300GB123D Tc - 25 °C, unless otherwise specified Values Units Absolute Maximum Ratings Symbol Conditions IGBT V CES Tj = 25 °C Tj = 150 °C 1200 v Tcase = 2 5 ”C 300 A = 220 A 400 A ±20 V 10 MS Tcase = 25 °C 260 A = 180 A 400 A Tj = 1 5 0 °C 2200


    OCR Scan     		PDF 300GB123D 300GB123Dee CASED56

    UPS es 550

    Abstract: SKM300GB123D
    Text: SKM 300GB123D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT Conditions Values 1200 V Tcase = 2 5 ” C 300 A Tease = 80 °C 220 A 400 A ±20 V 10 MS °C 260 A = 80 °C 180 A 400 A = 150 °C 2200 A Tcase = 25 °C 350 A 230 A 600


    OCR Scan     		PDF 300GB123D 300GB123D 300GAL123D 300GAR123D UPS es 550 SKM300GB123D

    SKM 75 GAL 123 IGBT

    Abstract: SKM 300 CIRCUIT GB-123 skm 50 gd 123 d GB173 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400
    Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment


    OCR Scan     		PDF GA123 GB123 GB173 SKM300GB SKM 75 GAL 123 IGBT SKM 300 CIRCUIT GB-123 skm 50 gd 123 d 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400

    SKHI 20

    Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
    Text: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200


    OCR Scan     		PDF

    semikron SKm 123D

    Abstract: semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKm 50 GB 123D semikron skm 150 gb 123 skm 50 gd 123 d skm 22 gal 123 SKM 75 GB 123D semikron skm 40 skm 40 gb 123 d
    Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment


    OCR Scan     		PDF GA123 00GA163D fll3bb71 semikron SKm 123D semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKm 50 GB 123D semikron skm 150 gb 123 skm 50 gd 123 d skm 22 gal 123 SKM 75 GB 123D semikron skm 40 skm 40 gb 123 d

    skm 200 gb 122 d

    Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
    Text: SEMIKRON Conditions ' VcES VcGR lc ICM V ges Tease Ptot per Values . 101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 200/150 400/300 ±20 1250 - 5 5 . .+150 2 500 Class F 55/150/56 Rge = 20 k fl = 25/80 °C Tease = 25/80 °C T j, Tstg Visol AC, humidity


    OCR Scan     		PDF l3bb71 G0D37G2 10-E1 skm 200 gb 122 d SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122

    Untitled

    Abstract: No abstract text available
    Text: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms


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    Untitled

    Abstract: No abstract text available
    Text: S IE D Ô13bb71 DDG3bflb D3T • SEK G S E M IK K O N SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc C onditions ' Values .101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 150/100 300/200 ±20 1000 - 5 5 . .+150 2 500 Class F 55/150/56


    OCR Scan     		PDF 13bb71

    skm 200 gb 122 d

    Abstract: SKM 200 GB 102 D SKM 200 GB 122 skm 100 gb 121d SKM 200 GB 102D SEMIKRON SKM 22 GAL 121D skm 100 gb 101 d 122d semikron rf3 skm 141
    Text: s e M IK R O N Sym bol Values . 101 D . 121 D .1 0 2 D i . 122 D Conditions 11 V ces II O C\J UJ O cr V cgr 1000 1200 V 1000 1200 V lc Tease — 2 5 /8 0 ‘ C 2 0 0 /1 5 0 ICM Tease = 2 5 /8 0 °C 4 0 0 /3 0 0 per IG B T , Tease = 2 5 ± 20 V - 5 5 . . . + 150


    OCR Scan     		PDF