SKM 200 CIRCUIT
Abstract: No abstract text available
Text: SKM 300 GB 126 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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Abstract: No abstract text available
Text: SKM 300 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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skm400gal125d
Abstract: SKM400GB125D
Text: SKM 400GB125D Tc = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT VCES Tj = 25 °C 1200 V IC Tj = 150 °C 400 300 A A ICRM ICRM=2xICnom 600 A ± 20 V Tj = 125 °C 10 µs Tcase = 25 °C Tcase = 80 °C 390
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400GB125D
400GAL125D
400GAR125D
skm400gal125d
SKM400GB125D
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Untitled
Abstract: No abstract text available
Text: SKM 300 GB 174 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC; ICN ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. 4) IEC 60721-3-3
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3K7/IE32
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Untitled
Abstract: No abstract text available
Text: SKM 300 GB 126 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
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T\datbl\B06-ig
bt\300
gb126d
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skm 50 gb 100 d
Abstract: No abstract text available
Text: SKM 300 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
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skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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skiip 613 gb
Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Text: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040
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skm 200 GB 12 V
Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC
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SKM 400 gal 124 IGBT
Abstract: skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits semikron skm 300 gar 124 IGBT inverter calculation FOR A UPS SKM 150 GB 124 D
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 570 / 400
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SKM 151F
Abstract: ac drives LS 600 M151A SKM151F drives ls 600 LS9100 resonant inverter for welding SKM 300 CIRCUIT LS-1800 M151A4R
Text: SKM 151 A4R Absolute Maximum Ratings Values Symbol Conditions 1 VDS VDGR ID IDM VGS PD Tj, Tstg) Visol humidity climate Units 500 500 70 / 50 280 / 200 ± 20 780 –40 . +150 (125) 2 500 RGE = 20 kΩ Tc = 25 / 80 °C Tc = 25 / 80 °C AC, 1 min. IEC 60721-3-3
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M151A
LS-52
SKM 151F
ac drives LS 600
SKM151F
drives ls 600
LS9100
resonant inverter for welding
SKM 300 CIRCUIT
LS-1800
M151A4R
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D73 -Y
Abstract: skm 75 gb 101 d skm 100 gb 101 d skm 50 gb 100 d semikron skm 300 gar 123 SKM 22 GD 101 D SKM 40 GD 101 D skm 40 gb 123 d SKM 300 CIRCUIT cemi data
Text: 5EMIKRDN Section 6: SEMITRANS IGBT Modules; New Range 1996 3rd Version: Low Inductance, lower Vc e m . soft and fast CAL diodes11 41 Type 2 VcES 2) lc = 25 °C 0 Teas« = V 1200 SKM 300 GA 123 D 1200 SKM 300 GA 173 D 1700 SKM 400 G A 123 D 5) 1200 SKM 400 G A 173 D 5> 1700
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Untitled
Abstract: No abstract text available
Text: SKM 300GB123D Tc - 25 °C, unless otherwise specified Values Units Absolute Maximum Ratings Symbol Conditions IGBT V CES Tj = 25 °C Tj = 150 °C 1200 v Tcase = 2 5 ”C 300 A = 220 A 400 A ±20 V 10 MS Tcase = 25 °C 260 A = 180 A 400 A Tj = 1 5 0 °C 2200
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300GB123D
300GB123Dee
CASED56
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UPS es 550
Abstract: SKM300GB123D
Text: SKM 300GB123D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT Conditions Values 1200 V Tcase = 2 5 ” C 300 A Tease = 80 °C 220 A 400 A ±20 V 10 MS °C 260 A = 80 °C 180 A 400 A = 150 °C 2200 A Tcase = 25 °C 350 A 230 A 600
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300GB123D
300GB123D
300GAL123D
300GAR123D
UPS es 550
SKM300GB123D
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Untitled
Abstract: No abstract text available
Text: SKM 300GB125D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT | Conditions V CES Tj = 25 °C •c Tj = 150 °C Values 1200 V Tcase = 2 5 ° C 300 A = 80 °C 210 A 400 A ±20 V 10 MS Tcase = 2 5 ° C 260 A = 80 °C 180 A 400 A 1800
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300GB125D
XLS-24
M300G125
XLS-23
CASED56
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Untitled
Abstract: No abstract text available
Text: SKM 300GB125D T c = 2 5 °C , u n le s s o th e r w is e s p e c ifie d Absolute Maximum Ratings Symbol Conditions IGBT | Values Units V CES Tj = 25 °C 1200 v !C Tj = 150 °C = 2 5 °C 300 A = 80 °C 210 A 400 A ±20 V 10 |JS Tease Tease *CRM lCRM- 2 x l Cnom
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300GB125D
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SKM 75 GAL 123 IGBT
Abstract: SKM 300 CIRCUIT GB-123 skm 50 gd 123 d GB173 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400
Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment
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GA123
GB123
GB173
SKM300GB
SKM 75 GAL 123 IGBT
SKM 300 CIRCUIT
GB-123
skm 50 gd 123 d
1700V-Types
GAL 700
SKM 25 GD
SKM100GB173
skm400
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SKHI 20
Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
Text: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200
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semikron SKm 123D
Abstract: semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKm 50 GB 123D semikron skm 150 gb 123 skm 50 gd 123 d skm 22 gal 123 SKM 75 GB 123D semikron skm 40 skm 40 gb 123 d
Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment
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GA123
00GA163D
fll3bb71
semikron SKm 123D
semikron SKm GAL 123D
SEMIKRON SKM 100 GAL 123D
semikron SKm 50 GB 123D
semikron skm 150 gb 123
skm 50 gd 123 d
skm 22 gal 123
SKM 75 GB 123D
semikron skm 40
skm 40 gb 123 d
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skm 200 gb 122 d
Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
Text: SEMIKRON Conditions ' VcES VcGR lc ICM V ges Tease Ptot per Values . 101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 200/150 400/300 ±20 1250 - 5 5 . .+150 2 500 Class F 55/150/56 Rge = 20 k fl = 25/80 °C Tease = 25/80 °C T j, Tstg Visol AC, humidity
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l3bb71
G0D37G2
10-E1
skm 200 gb 122 d
SKM 200 GB 102 D
SKM 200 GB 12V
Si 122D
SKM 150 GB 12V
SKM 200 GB 102D
skm 150 gal 122d
SEMIKRON SKM 50 GAL 121D
SEMIKRON SKM 22 GAL 121D
semikron skm 150 gb 122
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Untitled
Abstract: No abstract text available
Text: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms
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SKM 300 GA 102 D
Abstract: si 13003 br hc 13003 ml 13003 skm300ga122d semikron diode 200a DDD3717 DDG371B GA102 SKM 300 CIRCUIT
Text: 013bb71 □□□3710 Iflfl * S E K G S1E D S EM IK R D N SEPIIKRON INC Absolute Maximum Ratings Symbol Values 102 D Conditions1> 1000 1200 1000 1200 300/200 600/400 ±20 1750 -5 5 . . .+150 2 500 Class F 55/150/56 VcES Rge = 20 k iî VCGR Ic Tease = 2 5 / 8 5 ° C
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13bb71
813bh71
DDD3717
39-3i
GA102
SKM 300 GA 102 D
si 13003 br
hc 13003
ml 13003
skm300ga122d
semikron diode 200a
DDG371B
SKM 300 CIRCUIT
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3v100
Abstract: SKM 300 GA 102 D Ga 81 ga 39 diode
Text: se MIKRO n Absolute Maximum Ratings Sym bol Values . 102 D . 122 D Conditions 11 1000 1200 1000 1200 3 0 0 /2 0 0 6 0 0 /4 0 0 ±20 1750 - 5 5 . . .+150 2 500 V cES O CM II Tease — 2 5 /8 5 C Tease = 2 5 /8 5 °C ICM LU OC lc <3 VcGR V g es Ptot Tj, Tstg
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