skm 191 mosfet
Abstract: skm 151 mosfet SKM 181 R skm 141 ar zener DIODE D49 skm 181 mosfet SKM 200 CIRCUIT SKM 121 R semikron skm 191 skm 191
Text: Section 5: SEMITRANS M Power MOSFET Modules V ds Type ’ ’ ▲New type SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM V 101 AR 101 RZR 111 AR 111 RZR 450A010 121 A R 121 RZR 180A020 450A020
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450s1
D15/D45
450A010
180A020
450A020
120B020
240B020
310B020
240M020
310M020
skm 191 mosfet
skm 151 mosfet
SKM 181 R
skm 141 ar
zener DIODE D49
skm 181 mosfet
SKM 200 CIRCUIT
SKM 121 R
semikron skm 191
skm 191
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SKM 75 Gb 124 IGBT
Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON
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skm 200 gb 122 d
Abstract: SKM 200 GB 102 D SKM 200 GB 122 skm 100 gb 121d SKM 200 GB 102D SEMIKRON SKM 22 GAL 121D skm 100 gb 101 d 122d semikron rf3 skm 141
Text: s e M IK R O N Sym bol Values . 101 D . 121 D .1 0 2 D i . 122 D Conditions 11 V ces II O C\J UJ O cr V cgr 1000 1200 V 1000 1200 V lc Tease — 2 5 /8 0 ‘ C 2 0 0 /1 5 0 ICM Tease = 2 5 /8 0 °C 4 0 0 /3 0 0 per IG B T , Tease = 2 5 ± 20 V - 5 5 . . . + 150
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Si 122D
Abstract: SEMIKRON SKM 100 GAL 101D skm 150 gal 122d SKM 300 GB 12 V skm 100 gb 101 d SKM 200 GB 102D semikron skm 150 gb 122 semikron skm 50 z 100 R semikron skm 150 gal
Text: se MIKRO n Absolute Maximum Ratings Sym bol Values . 101 D . 121 D . 102 D . 122 D Conditions ' 1200 1 0 0 /7 5 ICM Tease = 2 5 /8 0 C 2 0 0 /1 5 0 V ges Ptot per IG B T , T case = 2 5 °C II O C LU Tease = 2 5 /8 0 CM a cr 1000 VcES VcGR lc 1000 1200
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Untitled
Abstract: No abstract text available
Text: S IE D Ô13bb71 DDG3bflb D3T • SEK G S E M IK K O N SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc C onditions ' Values .101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 150/100 300/200 ±20 1000 - 5 5 . .+150 2 500 Class F 55/150/56
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13bb71
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Untitled
Abstract: No abstract text available
Text: S1E SEMIKRON Conditions ' VcES V cgr lc SEMIKRON Values . 101 D i . 121 D 1000 1000 R ge = 20 k£2 Tease = 2 5 /8 0 °C Tease = 2 5 /8 0 °C ICM V g es Ptot Tj, Tstg I I 1200 1200 ±20 AC, 1 min humidity climate D IN 4 0 04 0 D IN I EC 6 8 T.1 Units V V
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Untitled
Abstract: No abstract text available
Text: SIE D m Ö13bb71 00D3bMb 452 « S E K G SEMIKRON SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Plot Tj, Tstg Visol hum idity climate C onditions Values . 101 ' D , .1 2 1 D 1000 1000 I 1200 i 1200 40/25 80/50 ±20 300 - 5 5 . . .+150
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13bb71
00D3bMb
Characteristic21
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SEMIKRON SKM 22 GAL 121D
Abstract: SEMIKRON SKM 50 GAL 121D skm 100 gb 121d GE215 40GB101D SK 70 KQ 16 SEMIKRON SKM4 skm 75 101 SEMIKROM SEMIKRON+SKM+22+GAL+121D
Text: s e MIKRD n Absolute Maximum Ratings Symbol C onditions 1 Values VcES R ge = 2 0 kQ T case = 2 5 /8 0 °C T case = 2 5 /8 0 °C VcGR lc ICM 1000 1200 V 1200 V per IG B T , T case = 2 5 °C 8 0 /5 0 A ± 20 V A C , 1 min D IN 4 0 0 4 0 W 300 -5 5 . humidity
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SKM40
SKM40GAR
SEMIKRON SKM 22 GAL 121D
SEMIKRON SKM 50 GAL 121D
skm 100 gb 121d
GE215
40GB101D
SK 70 KQ 16 SEMIKRON
SKM4
skm 75 101
SEMIKROM
SEMIKRON+SKM+22+GAL+121D
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skm 75 gb 101 d
Abstract: skm 100 gb 121d skm 75 gb 101d SK 50 GAL 065 75GB101D SK 200 GAR 125 skm 75 101 SEMIKRON SKM 22 GAL 121D
Text: s e MIKRDN Absolute Maximum Ratings Symbol Conditions 1 VcES VcGR lc ICM V ges Rge = 20 kQ Tease — 25/80 °C Tease = 25/80 °C Ptot Tj, Tstg V ¡so! humidity climate Values . 101 D 1000 1000 . 121 D Units 1200 1200 V V A A V I 75/50 150/100 ±20 500
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SKM75
skm 75 gb 101 d
skm 100 gb 121d
skm 75 gb 101d
SK 50 GAL 065
75GB101D
SK 200 GAR 125
skm 75 101
SEMIKRON SKM 22 GAL 121D
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skm 191
Abstract: semikron skm 191 Ultrasonic welding circuit diagram SKM181FC skm 151 mosfet semikron skm 191 fc SKM151FC skm 141 skm 191 mosfet Ultrasonic welding generator
Text: se MIKRO n Absolute Maximum and Minimum Ratings1* Sym bol V sup Vj Visol Tease Tstg Rating Value Driver supply voltage Input signal voltage Input-O utput Case tem perature2* Storage tem perature I mm. max. - 18 Vsup + 0,3 2500 + 85 + 85 -0 ,3 -4 0 -4 0 Unit
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SKM111
SKM181
skm 191
semikron skm 191
Ultrasonic welding circuit diagram
SKM181FC
skm 151 mosfet
semikron skm 191 fc
SKM151FC
skm 141
skm 191 mosfet
Ultrasonic welding generator
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Untitled
Abstract: No abstract text available
Text: SIE ]> • s é í TF k r o í T SEMIKRON in c Absolute Maximum Ratings Symbol ñl3bb71 DG03bb5 bTS M S E K G Conditions 1 Values . 101 D 121 D 1000 1000 1200 ■ 1200 50/34 100/68 + 20 400 - 5 5 . . .+150 2 500 VcES VcGR R g e = 20 k Q lc Tcase = 25/80 C
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l3bb71
DG03bb5
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SKM294F
Abstract: semikron skm 191 skm 191 SKM111RZR SKM 181 R skm 254 f skm 191 mosfet skm 141 ar SKM 121 R SKM 101
Text: s e MIKRON Absolute Maximum Ratings Sym bol C o n d itio n s 1> V ds V dg r R g s = 20 k i ! Id Idm V gs Pd T|, Tstg Visol humidity climate AC, 1 min, 20 0 |jA DIN 40 040 DIN IEC 68 T.1 Values Units 1000 1000 18 72 ± 20 400 - 5 5 . . .+150 2 500 Class F 5 5 /1 5 0 /5 6
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SKM 40 GD 101 D
Abstract: SKM 40 GD 121 D skm 40 gd 121 SKM 15 GD 100 D SKM40 B 688 MEEHAN SKM 22 GD 101 D SKM40GD121
Text: 5EMIKRDN Absolute Maximum Ratings Symbol V ce S VcGR lc ICM V ges Values Conditions ' . 101 D 1000 1000 Rge = 20 k f i Tcase — 25 /80 C T case = 25 /80 =C AC, 1 min humidity climate D IN 40 040 DIN I EC 6 8 T .1 1200 1200 4 0 /2 5 80 /50 ±20 300 - 5 5 . .+150
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SKM40
SKM 40 GD 101 D
SKM 40 GD 121 D
skm 40 gd 121
SKM 15 GD 100 D
B 688
MEEHAN
SKM 22 GD 101 D
SKM40GD121
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skm 141
Abstract: No abstract text available
Text: fil3bb71 0GG3bl0 2T7 « S E K 6 S1E D SEMIKRON SEMIKRON INC Absolute Maximum and Minimum Ratings1^ S ym bol R a tin g Vsup Driver supply voltage Input signal voltage Input-O utput Case tem perature2* Storage tem perature U n it V a lu e m in . Vj Visol Tease
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fil3bb71
SKM111
SKM181
skm 141
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SKM 111 AR
Abstract: SKM 181 R semikron semitrans skm 151 mosfet SKM 300 CIRCUIT SKM111 SKM181 semikron semitrans 3 SKM120
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1) RGS = 20 kΩ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 100 100 200 600 ± 20 700 – 40 . . .+150 (125) 2 500 Class F 40/125/56 V V A A V W °C V
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semikron semitrans
Abstract: SKM 111 AR SKM 181 R SKM 204 A SKM204A skm 181 mosfet SEMIKRON 204 Semitrans
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1) RGS = 20 kΩ Tcase = 55 °C AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 50 50 200 600 ± 20 400 – 40 . . .+150 (125) 2 500 Class F 40/125/56 V V
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SKM 181 R
Abstract: semikron semitrans skm 151 mosfet SKM 111 AR SKM 121 R SKM 300 CIRCUIT SKM151R nf 52 ar skm204a SKM 121 AR
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VDS VDGR ID IDM VGS PD Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ AC, 1 min. DIN 40 040 DIN IEC 68 T.1 500 500 48 192 ± 20 625 –40 . +150 (125) 2 500 Class F 40/125/56 V V A A V W °C V 48
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30source
SKM 181 R
semikron semitrans
skm 151 mosfet
SKM 111 AR
SKM 121 R
SKM 300 CIRCUIT
SKM151R
nf 52 ar
skm204a
SKM 121 AR
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Untitled
Abstract: No abstract text available
Text: fll3bb71 G003b54 5ET S1E D SEMIKRON SEMIKRON INC Absolute Maximum Ratings Symbol Values . 101 D 121 D Conditions ' VcES lc R g e = 20 k n T case = 2 5 /8 0 ICM T case = 2 5 /8 0 VcGR per Visol AC, 1 min DIN 4 0 0 4 0 DIN IEC 6 8 1200 V 1000 1200 V °C °C
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fll3bb71
G003b54
fil3btj71
B6-94
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Untitled
Abstract: No abstract text available
Text: SIE D • Ö13bb71 DD03b3ö 3flb « S E K G SEMIKRON S E M I K R O N INC Absolute Maximum Ratings Symbol Conditions1 VcES VcGR lc Rge = 20 k f l Values .121 D . 101 D 1000 1000 V ges Ptot T], Tstg Visoi per IGBT, Tease = 25 °C AC, 1 min humidity DIN 40 040
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13bb71
DD03b3Ã
fll3bb71
QGD3b45
T-39-31
SKM22GD101
SKM22GD121
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n Absolute Maximum Ratings Symbol Term Vs Top Supply voltage prim. Input signal voltage High Output peak current Output average current (max.) Collector-Em itter voltage sense across the IGBT Rate of rise and fall of voltage secondary to prim ary side
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Visol12
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skm 151 mosfet
Abstract: No abstract text available
Text: Section 5: SEMITRANS M Power MOSFET Power MOSFET Modules Type" V ds T=25 C Pd Rin,c C ase C ircuit SEMITRANS® M1 Case D 20 SEMITRANS^ M2 Cases D 48 / D 49 Cases D 42. 44 SEMITRANS® M3 = 25 C A m ii W °C /W 50 2 00z 3,5 700 0,18 D 15 S K M 1 0 1 R ZR
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Untitled
Abstract: No abstract text available
Text: s e MIKROn Absolute Maximum Ratings Values Symbol Conditions 1 Units VcES VcGR lc IcM V ges = 20 Toase = 25/85 °C Tease = 25/85 °C; tp = 1 ms P to t per R 1200 1200 1 5 0 /1 0 0 300 / 200 ± 20 700 -4 0 . + 150 125) 2 500 Class F 40/125/56 g e I G B T , T o as e
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Semikron sk 51
Abstract: No abstract text available
Text: s e m ik r d n Absolute Maximum Ratings Symbol Conditions 1 Values Vos V dgr Id Vgs Po humidity climate V V A A V 200 200 130 3 90 ± 20 700 55 . . .+150 2 500 R g s = 20 k ß Id m Tj, T S|g Visol Units A C , 1 min D IN 4 0 0 4 0 D IN I E C 6 8 T.1 SEMITRANS M
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skm 200 gb 122 d
Abstract: No abstract text available
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 150 / 100
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