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    SK 136 TRANSISTOR Search Results

    SK 136 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SK 136 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    semikron SKa 6/20

    Abstract: diode SKN SKN 130/12 SKR 130/12 Semikron 240/04 diode data semikron skn 50/04 Semikron sk 1 SEMIKRON SKN 130/12 SKR 130/12 SKN 50/08 SKN 21 DIODE diode ska 6/20
    Text: VRSM VRRM Rectifier Diodes IFRMS maximum values for continuous operation 3A 6,7 A SK 1 SKa 1 IFAV (sin. 180; Tamb = 45 °C) 1,15 A 1,8 A V 1000 1200 1400 1600 Types Cmax. µF Rmin. Ω Types Cmax. µF Rmin. Ω SK 1/10 SK 1/12 SK 1/14 SK 1/16 500 400 300


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    PDF Nm/35 Nm/22 semikron SKa 6/20 diode SKN SKN 130/12 SKR 130/12 Semikron 240/04 diode data semikron skn 50/04 Semikron sk 1 SEMIKRON SKN 130/12 SKR 130/12 SKN 50/08 SKN 21 DIODE diode ska 6/20

    Untitled

    Abstract: No abstract text available
    Text: A Heatsinks CB TO 3 S 33°30’ 13,2 4,7 3,6 15,1 5,6 10,9 30,2 CB = TO 3 + SOT 9 + TO 66 + SOT 32 at 37.5 mm oblique drilling D TO 3 oblique drilling for TO 220 E 10,9 4,2 4,2 4,2 30,2 13,2 6 14,9 32 13,2 10 3 10,9 4,2 C TO 3 15,1 37.5 mm TO 3 exceeding SOT 32


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    varistor 125 012 1310

    Abstract: transistor d471 v471u Varistor V471U ZNR V10 241U panasonic varistor ERZV diode V681 D331 transistor V241U V221U
    Text: ÒZNR âÓTransient/Surge Absorbers Type D ÒZNR âÓ Transient/Surge Absorbers Series: Type: V D ÒZNRâ Ó Transient/Surge Absorber, Series V, Type D is released through our continued research in ceramic material composition of ZnO varistor and manufacturing


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    "LCD Power Supply"

    Abstract: f 4556 quartz 32,768khz C2K M34556G8FP M34556G8HFP M34556M4H-XXXFP M34556M4-XXXFP M34556M8H-XXXFP M34556M8-XXXFP
    Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4556 Group REJ03B0025-0300Z Rev.3.00 2004.07.09 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4556 Group is a 4-bit single-chip microcomputer designed with


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    PDF REJ03B0025-0300Z 16bit "LCD Power Supply" f 4556 quartz 32,768khz C2K M34556G8FP M34556G8HFP M34556M4H-XXXFP M34556M4-XXXFP M34556M8H-XXXFP M34556M8-XXXFP

    quartz 32,768khz C2K

    Abstract: 104 c1k capacitor 4552 VT MAKING CODE 3F TRANSISTOR QFP48 package M34552M8-XXXFP M34552G8FP M34552G8HFP M34552M4H-XXXFP M34552M4-XXXFP
    Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4552 Group REJ03B0023-0300Z Rev.3.00 2004.07.09 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4552 Group is a 4-bit single-chip microcomputer designed with


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    PDF REJ03B0023-0300Z 16bit quartz 32,768khz C2K 104 c1k capacitor 4552 VT MAKING CODE 3F TRANSISTOR QFP48 package M34552M8-XXXFP M34552G8FP M34552G8HFP M34552M4H-XXXFP M34552M4-XXXFP

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4556 Group REJ03B0025-0200Z Rev.2.00 2004.02.24 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4556 Group is a 4-bit single-chip microcomputer designed with


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    PDF REJ03B0025-0200Z 16-bit

    MR200

    Abstract: No abstract text available
    Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4553 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4553 Group is a 4-bit single-chip microcomputer designed with CMOS technology. Its CPU is that of the 4500 series using a


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    PDF REJ03B0024-0200Z 16-bit MR200

    "LCD Power Supply"

    Abstract: driver cicuit diagram M34553G8FP M34553G8HFP M34553M4H-XXXFP M34553M4-XXXFP M34553M8H-XXXFP M34553M8-XXXFP
    Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4553 Group REJ03B0024-0300Z Rev.3.00 2004.07.09 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4553 Group is a 4-bit single-chip microcomputer designed with


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    PDF REJ03B0024-0300Z 16bit "LCD Power Supply" driver cicuit diagram M34553G8FP M34553G8HFP M34553M4H-XXXFP M34553M4-XXXFP M34553M8H-XXXFP M34553M8-XXXFP

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4552 Group REJ03B0023-0200Z Rev.2.00 2004.02.24 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4552 Group is a 4-bit single-chip microcomputer designed with


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    PDF REJ03B0023-0200Z 16-bit

    TRANSISTOR A3

    Abstract: tda 4554 R4H11 AY102 cmos 4554 M34554EDFP M34554M8-XXXFP M34554MC-XXXFP c4554
    Text: 4554 Group REJ03B0043-0200Z Rev.2.00 Jul 01, 2003 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4554 Group is a 4-bit single-chip microcomputer designed with CMOS technology. Its CPU is that of the 4500 series using a simple, high-speed instruction set. The computer is equipped with


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    PDF REJ03B0043-0200Z TRANSISTOR A3 tda 4554 R4H11 AY102 cmos 4554 M34554EDFP M34554M8-XXXFP M34554MC-XXXFP c4554

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    c 4554

    Abstract: cmos 4554 tda 4554 TRANSISTOR A3 M34554EDFP M34554M8-XXXFP M34554MC-XXXFP W620 AY102 W3101
    Text: 4554 Group REJ03B0043-0201Z Rev.2.01 Sep 18, 2003 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4554 Group is a 4-bit single-chip microcomputer designed with CMOS technology. Its CPU is that of the 4500 series using a simple, high-speed instruction set. The computer is equipped with


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    PDF REJ03B0043-0201Z c 4554 cmos 4554 tda 4554 TRANSISTOR A3 M34554EDFP M34554M8-XXXFP M34554MC-XXXFP W620 AY102 W3101

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    tda 4554

    Abstract: TRANSISTOR A3 AY102 M34554EDFP M34554M8-XXXFP M34554MC-XXXFP ti2a
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    WMV smd transistor

    Abstract: smd mk
    Text: f.con ISO 14001 Alphanumerical product list art. no. page art. no. page art. no. page art. no. page 1706 . G 1831 . ASL . SMD . ASL . SMD . B SM ASLA . ASLG . BADM . BADP . BK 01 32 BL 1 . BL 10 . BL 11 . BL 12 . BL 13 . BL 14 .


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    sk 473

    Abstract: SK5137 A461A SK43A SK113 2SK519 SK1100 SK-1360 3SK122 SK1856
    Text: A 1:1 Strangkühlkörper Dissipateurs extrudés Extruded heatsinks K/W 36 33 6,3 3,9 6,5 30 1,3 SK 522 27 10,6 12,6 24 15 25 37,5 50 1000 mm 15 30 45 50 mm 50 100 150 200 mm 50 100 150 200 mm 50 100 150 200 mm K/W 26 24 22 20 8 SK 521 3 18 15,3 25 37,5 50 75 100 1000 mm


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    Untitled

    Abstract: No abstract text available
    Text: APTM100UM65SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module D DK VDSS = 1000V RDSon = 65m typ @ Tj = 25°C ID = 145A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control


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    PDF APTM100UM65SCAVG

    APT0502

    Abstract: APT0601 APTM100UM65SCAVG PF7000 670V
    Text: APTM100UM65SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module D DK VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies


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    PDF APTM100UM65SCAVG APT0502 APT0601 APTM100UM65SCAVG PF7000 670V

    APT0502

    Abstract: APT0601 APTM100UM65DAG DON60
    Text: APTM100UM65DAG Single switch with Series diode MOSFET Power Module SK VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Application S D G DK S Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance


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    PDF APTM100UM65DAG APT0502 APT0601 APTM100UM65DAG DON60

    SK 136 transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK466-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


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    PDF BUK466-100A SQT404 SK 136 transistor

    3SK124

    Abstract: NE41137 L25C 40Ghz transistor ne411 nec 151 lD-10mA
    Text: NEC/ CALIFORNIA 40 DE | k 4 S 7 4 1 4 0DD0SS2 1 | ~ D _ MES FIELD EFFECT TRANSISTOR NE41137 PRELIMINARY DATA SHEET NChannel GaAs Dual Gate MES FET PHYSICAl DIMENSIONS Units in mm FEATURES • LOW C rss : 0.03 pF TYP. PACKAGE CODE - 37 • H IG H G p s : 20dB TYP. at 9 0 0 MHz


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    PDF NE41137 900MHz 3SK124 NE41137 L25C 40Ghz transistor ne411 nec 151 lD-10mA

    ST2S05

    Abstract: st2506
    Text: SLOTTED OPTSCAL SWITCH QPTDELECiROHiCi CNY36 £ h D1 02 *J L l O r D | \ 0 b| bt SECTION X - X LEAD PROFILE T SYMBOL MILLIMETERS MIN. MAS*. A 107 11.0 A. 3,0 3.2 b ' .800 .750 b, .50 MOM 0, 11.5 12.3 3.0 D, 3.3 7.S 6.9 * 2.3 2.8 . * E? 6.15 636 L B.00


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    PDF CNY36 27nim ST2S05 ST2506 ST2S05 st2506

    ST134W

    Abstract: st-1187
    Text: e * SLOTTED OPTICAL SWITCH q D Pïm m m ics H22A4/5/6 SYMBOL h ir íiT l 1 " tL 4b ! bi SECTION X - X LEAD PROFILE ST134WH A A, b fa. □, 0, e 9> “ JfllUMETERS MAX, UN. 50.7 11.0 3.0 3.2 ,750 .600 .50 NOM. 11.6 1Í1.0 3.0 S3 7.5 6.S 2.3 2.8 I s s, r 6.1$


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    PDF H22A4/5/6 ST134W ST1187 st-1187

    1j0 919 506 k

    Abstract: 1251H AT82 I.C LA 3778
    Text: l ï l HEWLETT I S S fl P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011, AT-32033 Features Description • High Performance Bipolar Translator Optimized for Low Current, Low Voltage Operation • Am plifier T ested 900 MHz


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    PDF AT-32011, AT-32033 OT-23 OT-143 AT-32011 AT-32033 6B63-6366E 1j0 919 506 k 1251H AT82 I.C LA 3778