SJE TRANSISTOR Search Results

bfr93

Abstract: DBFR93 T-989 BFR91 BFT93 sot-23 marking jn T-31-17
Contextual Info: N AMER PHILIPS/DISCRETE S5E D • ^53^31 QGlfiG7S Q ■ BFR93 T -3I-I7 N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a SOT-23 plastic envelope. It is primarily intended fo r use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems, oscilloscopes,

BFR49

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D □ ^ £ 3 = 1 3 1 0017133 a • BFR49 BFF9UA is recommended for new design T -3 /-H N-P-N 2 GHz WIDEBAND TRANSISTOR N-P-N transistor in a miniature hermetically sealed micro stripline encapsulation featuring a high transition frequency and low noise. It is suitable for amplifiers up to S-band frequencies in

Transistor SJE 5331

Abstract: BFR49 sje 5331 transistor SJE 5331 IEC134
Contextual Info: A ME R PHILIPS/DISCRETE 2SE D • Lfci53cì31 O G l ? ^ & BFR49 BFR4 \^ _ BHH9UA is recommended for new design r-ti-ii N-P-N 2 GHz WIDEBAND TRANSISTOR N-P-N transistor in a miniature hermetically sealed micro stripline encapsulation featuring a high transition frequency and low noise. It is suitable for amplifiers up to S-band frequencies in

Contextual Info: N AMER PHILIPS/DISCRETE SSE D BFQ33C is recommended for new design bbS3T31 0017633 0 • BFQ33 T '-3 /-| S ' N-P-N MICROWAVE TRANSISTOR The B FQ is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation, featuring an extremely high transition frequency of 12 GHz and very low noise.

BFQ33

Abstract: SOT-100 BFQ33C IEC134 transistor bbs
Contextual Info: AMER PHILIPS/DISCRETE 5SE D • 0017333 G ■ B F Q 3 3 C is recommended for new design BFQ33 ^ T - S l - i g N-P-N MICROWAVE TRANSISTOR The B F Q is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation featuring an extremely high transition frequency of 12 G H z and very low noise.

50BO

Abstract: sje transistor
Contextual Info: 1DI5OMA-O5O 50a / < 7 \= 7 - POWER TRANSISTOR MODULE : Features • hF E *'' '-' High DC Current Gain • 7.4 y 7 KA^iSv.' • JfiiSifli Insulated Type High speed sw itching • E l i Ê : A p p lic a tio n s Power Sw itching • ?;/u— Mot or Brake in Inverter

BFQ51C

Abstract: marking code ci SOT173 BFP90A SOT-173 MARKING 0 SOT173
Contextual Info: N AMER PHILIPS/DISCRETE BSE D • ^53^31 GQ17Û73 1 ■ A BFQ51C T -3 I-I7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,

Contextual Info: b b S B ' m DD14TS7 3 D E V E L O P M E N T DATA This data sheet contains advance Information and specifications are subject to change without notice. LTE21009R LTE21015R 11' N ANER PHILIPS/DISCRETE ObE D M ICROW AVE LINEAR POW ER TRA N SISTO R N-P-N silicon transistor for use in common-emitter class-A linear power amplifiers up to 4,2 GHz.

Contextual Info: N AMER P H IL I P S / D I S C R E T E BSE D Jl ftSHlHl QQ17S73 1 • BFQ51C T - 3 /- / 7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature H E R M E T IC A L L Y S E A L E D micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,

Contextual Info: 2DI15OZ-12OO50A / < 7 - : Outline Drawings ;u POWER TRANSISTOR MODULE F e a tu re s • SffiME H ig h V oltage • 7 l) — ïfc-f y .1:[•' H-;. — K r tfltt • ASO In c lu d in g Free W h e e lin g D iode E xcellent Safe O p e ra tin g Area • ifâ J iïïi

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure

BFR90A

Abstract: BFR92A BFT92 A18 transistor
Contextual Info: N AMER PHILIPS/DISCRETE 2 5E D • ^53^31 001fl0b3 4 WÊ BFR92A T X 3 M ? N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is primarily intended for use in v.h.f./u.h.f. broadband amplifiers. The transistor features: • low noise;

transistor b237

Abstract: IJ9a B238 T151 T460 T760 T810 T930 transistor 1151 1DI5OF-1OOC50A
Contextual Info: 1DI5OF-1OO 50a POWER TRANSISTO R MODULE • t t f t : F e a tu re s • Sfi§i/± High Voltage • K rt • ASO/^T av ,' • Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type • A p p li c a t io n s • Chopper Controls DC Motor Controls

BA6807

Abstract: Transistor 7f3
Contextual Info: BA6807/ BA6807F/ BA6808FS BA6807/BA6807F ;3A6807F £ BA6808FS i. ' r„ -y ¿T - S, T" • i f Jfi'+iiE]/Dim ensions (Unit : mm ) (Different packages are available for BA6780F and BA6808FS.) BA6807/BA6807F/BA6808FSli, 12VSfflc7)7 T fc i ; , <£ i j i L t

SFH611-3

Abstract: sfh-610-1 5186A SFH611-4 SFH 567 GE cny17 SFH640-2 SFH610-2 sfh617g-2 BRT13H
Contextual Info: Optocouplers Packag* and Typ* Package Outlirt« Fsa turcs Part Number Currant Tran*far Ratio % lf«10 mA IL205 4 0 -80 IL206 63-125 {Voc)1 Withstand Taat 8 pin SO IC -8 DIP, single phototransislor SFH6106-3 SFH S106 4 pin DIP surface mount, phototransistor

Contextual Info: SSI 32H6230 ¿écotisystems' Servo Motor Driver A TDK Group/Company Preliminary Data December 1992 DESCRIPTION FEATURES The SSI 32H6230 Servo Motor Driver is a bipolar device intended for use in Winchester disk drive head positioning systems employing linear or rotary voice

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

Contextual Info: inte1 !P[ni [G U ST PR EW D ÊW 83C196EA CHMOS 16-BIT MICROCONTROLLER Automotive 32 MHz operation Optional clock doubler 2 Mbytes of linear address space 1 Kbyte of register RAM 3 Kbytes of code RAM 8 Kbytes of ROM Stack overflow/underflow monitor with user-defined upper and lower stack

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

7 segmen

Contextual Info: HD66727 Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function HITACHI Description The HD66727, dot-matrix liquid crystal display controller and driver LSI incorporating a key scan function, displays alphanumerics, katakana, hiragana, and symbols. It can be configured to drive a dot­

Relais ITT

Abstract: DIODE 5TE elektronik DDR bauelemente DDR VEB M ik ro e le k tro n ik VEB Kombinat Transistoren DDR TRANSISTOR KATALOG translog Kombinat VEB A 281
Contextual Info: KOMBINAT VEB ELEKTRO- APPARATE - WERKE BERLIN-TREPTOW O ursalog G Digitale Bausteine M odul 20 In h a ltsverzeich n is Seite Allgemeine Übersicht Konstruktiver und funktioneller Aufbau Systemparameter Zusammenschaltregeln Betriebsdaten ursamat Gefäßsystem

POWER TRANSFORMER E154515

Abstract: scheme e131175 sampo E159656 foxconn e253117 e131175 XEPEX E140166 sony bando power transformer power transformer e190246 tamradio transformer e199273
Contextual Info: 10129 LIST OF COMPANY IDENTIFICATIONS The List of Company Identifications contains the trade names, trademarks, or other designations authorized for use in lieu of these Company names. ‘‘ ’’ — 2CS SRL ’’ — ACT CO LTD ‘‘ ‘‘ ’’ — 3E HK LTD

transistor c5578

Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
Contextual Info: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: info@belden.com Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main